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STF40NF06产品简介:
ICGOO电子元器件商城为您提供STF40NF06由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供STF40NF06价格参考以及STMicroelectronicsSTF40NF06封装/规格参数等产品信息。 你可以下载STF40NF06参考资料、Datasheet数据手册功能说明书, 资料中有STF40NF06详细功能的应用电路图电压和使用方法及教程。
| 参数 | 数值 |
| 产品目录 | |
| ChannelMode | Enhancement |
| 描述 | MOSFET N-CH 60V 23A TO220FPMOSFET N-Ch 60 Volt 23 Amp |
| 产品分类 | FET - 单分离式半导体 |
| FET功能 | 标准 |
| FET类型 | MOSFET N 通道,金属氧化物 |
| Id-ContinuousDrainCurrent | 23 A |
| Id-连续漏极电流 | 23 A |
| 品牌 | STMicroelectronics |
| 产品手册 | |
| 产品图片 |
|
| rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
| 产品系列 | 晶体管,MOSFET,STMicroelectronics STF40NF06STripFET™ II |
| 数据手册 | |
| 产品型号 | STF40NF06 |
| Pd-PowerDissipation | 30 W |
| Pd-功率耗散 | 30 W |
| RdsOn-Drain-SourceResistance | 28 mOhms |
| RdsOn-漏源导通电阻 | 28 mOhms |
| Vds-Drain-SourceBreakdownVoltage | 60 V |
| Vds-漏源极击穿电压 | 60 V |
| Vgs-Gate-SourceBreakdownVoltage | +/- 20 V |
| Vgs-栅源极击穿电压 | 20 V |
| 上升时间 | 11 ns |
| 下降时间 | 11 ns |
| 不同Id时的Vgs(th)(最大值) | 4V @ 250µA |
| 不同Vds时的输入电容(Ciss) | 920pF @ 25V |
| 不同Vgs时的栅极电荷(Qg) | 32nC @ 10V |
| 不同 Id、Vgs时的 RdsOn(最大值) | 28 毫欧 @ 11.5A,10V |
| 产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26067 |
| 产品目录页面 | |
| 产品种类 | MOSFET |
| 供应商器件封装 | TO-220FP |
| 其它名称 | 497-4343-5 |
| 其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF83571?referrer=70071840 |
| 典型关闭延迟时间 | 27 ns |
| 功率-最大值 | 30W |
| 包装 | 管件 |
| 商标 | STMicroelectronics |
| 安装类型 | 通孔 |
| 安装风格 | Through Hole |
| 封装 | Tube |
| 封装/外壳 | TO-220-3 整包 |
| 封装/箱体 | TO-220FP-3 |
| 工厂包装数量 | 1000 |
| 晶体管极性 | N-Channel |
| 最大工作温度 | + 175 C |
| 最小工作温度 | - 55 C |
| 标准包装 | 50 |
| 正向跨导-最小值 | 12 S |
| 漏源极电压(Vdss) | 60V |
| 电流-连续漏极(Id)(25°C时) | 23A (Tc) |
| 系列 | STF40NF06 |
| 通道模式 | Enhancement |
| 配置 | Single |
STF40NF06 Ω N-channel 60V - 0.024 - 23A - TO-220FP STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STF40NF06 60V <0.028Ω 23A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization 1 2 ■ 100% avalanche tested TO-220FP Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting Internal schematic diagram transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Order codes Part number Marking Package Packaging STF40NF06 F40NF06 TO-220FP Tube September 2006 Rev 3 1/12 www.st.com 12
Contents STF40NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12
STF40NF06 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 60 V DS GS V Gate-source voltage ± 20 V GS I Drain current (continuous) at T = 25°C 23 A D C I Drain current (continuous) at T =100°C 16 A D C I (1) Drain current (pulsed) 92 A DM P Total dissipation at T = 25°C 30 W TOT C Derating Factor 0.2 W/°C dv/dt(2) Peak diode recovery voltage slope 10 V/ns E (3) Single pulse avalanche energy 250 mj AS Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t=1s; Tc= 25°C) T Operating junction temperature J -55 to 175 °C T Storage temperature stg 1. Pulse width limited by safe operating area 2. I ≤ 40A, di/dt ≤ 300A/µs, V ≤ V , Tj ≤ T SD DD (BR)DSS JMAX 3. Starting T = 25°C, I = 20A, V = 30V j D DD Table 2. Thermal data R Thermal resistance junction-case Max 5.0 °C/W thj-case Maximum lead temperature for soldering T 275 °C l purpose 3/12
Electrical characteristics STF40NF06 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage ID = 250 µA, VGS= 0 60 V Zero gate voltage drain VDS = Max rating, 1 µA I DSS current (VGS = 0) VDS = Max rating @125°C 10 µA Gate body leakage current IGSS (V = 0) VGS = ±20V ± 100 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 4 V Static drain-source on RDS(on) resistance VGS= 10V, ID= 11.5A 0.024 0.028 Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V = 30V, I = 11.5A 12 S fs DS D Input capacitance C 920 pF iss Output capacitance V =25V, f=1 MHz, C DS 225 pF oss Reverse transfer VGS=0 C 80 pF rss capacitance Q Total gate charge 32 nC g V =48V, I = 10A Q Gate-source charge DD D 6.5 43 nC gs V =10V Q Gate-drain charge GS 15 nC gd 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit V = 30V, I = 20A, t Turn-on Delay Time DD D 27 ns d(on) R = 4.7Ω, V = 10V t Rise Time G GS 11 ns r (see Figure 13) V = 30V, I = 20A, t Turn-off-delay time DD D 27 ns d(off) R =4.7Ω, V =10V t Fall time G GS 11 ns f (see Figure 13) 4/12
STF40NF06 Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 23 A I (1) Source-drain current (pulsed) 92 A SDM VSD(2) Forward on voltage ISD=23A, VGS=0 1.3 V I =40A, trr Reverse recovery time SD 63 ns di/dt = 100A/µs, Qrr Reverse recovery charge 150 nC V =10V, Tj=150°C I Reverse recovery current DD 4.8 A RRM (see Figure 15) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12
Electrical characteristics STF40NF06 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12
STF40NF06 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs vs temperature temperature Figure 11. Source-drain diode forward Figure 12. Normalized breakdown voltage vs characteristics temperature 7/12
Test circuit STF40NF06 3 Test circuit Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12
STF40NF06 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12
Package mechanical data STF40NF06 TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 10/12
STF40NF06 Revision history 5 Revision history T able 7. Revision history Date Revision Changes 12-Nov-2004 1 First release 27-May-2005 2 Final datasheet 04-Sep-2006 3 New template, no content change 11/12
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