SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G ESD Protection Diode Array, 5-Line This 5−line surge protection array is designed for application www.onsemi.com requiring transient voltage protection capability. It is intended for use in over−transient voltage and ESD sensitive equipment such as computers, printers, automotive electronics, networking SC−88 FIVE SURGE communication and other applications. This device features a PROTECTION monolithic common anode design which protects five independent 100 W PEAK POWER lines in a single SC−88 package. Features • Protects up to 5−Line in a Single SC−88 Package • Peak Power Dissipation − 100 W (8 x 20 (cid:2)s Waveform) SC−88 • CASE 419B ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model STYLE 24 and Class C (Exceeding 400 V) per Machine Model. • Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact) PIN ASSIGNMENT • Flammability Rating of UL 94 V−0 • SZ Prefix for Automotive and Other Applications Requiring Unique PIN1.CATHODE 1 6 2.ANODE Site and Control Change Requirements; AEC−Q101 Qualified and 3.CATHODE PPAP Capable 2 5 4.CATHODE • Pb−Free Packages are Available* 5.CATHODE 3 4 6.CATHODE Applications • Hand−Held Portable Applications • MARKING DIAGRAM Networking and Telecom • Automotive Electronics 6 • Serial and Parallel Ports • XX M(cid:2) Notebooks, Desktops, Servers (cid:2) MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) 1 Symbol Rating Value Unit XX = Specific Device Code PPK 1 Peak Power Dissipation W 6J = SMF05C 8 x 20 (cid:2)s Double Exponential Waveform 100 6K= SZSMF12C/SMF12C (Note 1) 6L = SMF15C T Operating Junction Temperature Range −40 to 125 °C 6M= SMF24C J M = Date Code TSTG Storage Temperature Range −55 to 150 °C (cid:2) = Pb−Free Package TL Lead Solder Temperature (10 s) 260 °C ESD Human Body Model (HBM) 16000 V ORDERING INFORMATION Machine Model (MM) 400 See detailed ordering and shipping information in the package IEC 61000−4−2 Air (ESD) 15000 dimensions section on page 3 of this data sheet. IEC 61000−4−2 Contact (ESD) 15000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 3. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2017 − Rev. 5 SMF05C/D

SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G SMF05CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM (Note 2) 5.0 V Breakdown Voltage VBR IT = 1 mA, (Note 3) 6.2 7.2 V Reverse Leakage Current IR VRWM = 5 V 0.07 5.0 (cid:2)A Clamping Voltage VC IPP = 5 A (8 x 20 (cid:2)s Waveform) 9.8 V Clamping Voltage VC IPP = 8 A (8 x 20 (cid:2)s Waveform) 12.5 V Maximum Peak Pulse Current IPP 8 x 20 (cid:2)s Waveform 8.0 A Capacitance CJ VR = 0 V, f = 1 MHz (Line to GND) 80 130 pF SMF12CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM (Note 2) 12 V Breakdown Voltage VBR IT = 1 mA, (Note 3) 13.3 15 V Reverse Leakage Current IR VRWM = 12 V 0.01 0.1 (cid:2)A Clamping Voltage VC IPP = 3 A (8 x 20 (cid:2)s Waveform) 21 V Clamping Voltage VC IPP = 6 A (8 x 20 (cid:2)s Waveform) 23 V Maximum Peak Pulse Current IPP 8 x 20 (cid:2)s Waveform 6.0 A Capacitance CJ VR = 0 V, f = 1 MHz (Line to GND) 40 60 pF SMF15CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM (Note 2) 15 V Breakdown Voltage VBR IT = 1 mA, (Note 3) 17 19 V Reverse Leakage Current IR VRWM = 15 V 0.01 1.0 (cid:2)A Clamping Voltage VC IPP = 1 A (8 x 20 (cid:2)s Waveform) 23 V Clamping Voltage VC IPP = 5 A (8 x 20 (cid:2)s Waveform) 29 V Maximum Peak Pulse Current IPP 8 x 20 (cid:2)s Waveform 5.0 A Capacitance CJ VR = 0 V, f = 1 MHz (Line to GND) 33 45 pF SMF24CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM (Note 2) 24 V Breakdown Voltage VBR IT = 1 mA, (Note 3) 26.7 32 V Reverse Leakage Current IR VRWM = 24 V 0.01 1.0 (cid:2)A Clamping Voltage VC IPP = 1 A (8 x 20 (cid:2)s Waveform) 40 V Clamping Voltage VC IPP = 2.5 A (8 x 20 (cid:2)s Waveform) 44 V Maximum Peak Pulse Current IPP 8 x 20 (cid:2)s Waveform 2.5 A Capacitance CJ VR = 0 V, f = 1 MHz (Line to GND) 21 25 pF 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Include SZ-prefix devices where applicable. www.onsemi.com 2

SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 100 100 %) 90 T 90 tr PEAK VALUE IRSM @ 8 (cid:2)s TION ( 80 RREN 80 PAUS LTSHEA TW PIDOTIHN T(t PW) HISE DREEF TINHEED PA 70 CU 70 PEAK CURRENT DECAY = 8 (cid:2)s SI 60 E 60 R DIS 50 PULS 50 HALF VALUE IRSM/2 @ 20 (cid:2)s WE 40 K 40 A PO 30 PE 30 K F tP A 20 O 20 PE % 10 10 0 0 0 25 50 75 100 125 150 175 200 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) t, TIME ((cid:2)s) Figure 1. Pulse Derating Curve Figure 2. 8 × 20 (cid:2)s Pulse Waveform 100 100 E (V) SMF24CT1G pF) SMF05CT1G TAG SMF15CT1G CE ( L N O SMF12CT1G A SMF12CT1G G V SMF05CT1G CIT SMF15CT1G PIN 10 APA 10 SMF24CT1G M C A N CL O , MP CTI A N L U VC J 1 1 0 5 10 15 0 5 10 15 20 25 IPP, PEAK PULSE CURRENT (A) VBR, REVERSE VOLTAGE (V) Figure 3. Clamping Voltage vs Peak Pulse Current Figure 4. Junction Capacitance vs Reverse Voltage ORDERING INFORMATION Device Package Shipping† SMF05CT1G SC−88 3,000 / Tape & Reel (Pb−Free) SMF05CT2G* SC−88 3,000 / Tape & Reel (Pb−Free) SMF12CT1G SC−88 3,000 / Tape & Reel (Pb−Free) SMF15CT1G SC−88 3,000 / Tape & Reel (Pb−Free) SMF24CT1G SC−88 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *The “T2” suffix refers to an alternate tape & reel orientation. www.onsemi.com 3

SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 D ISSUE W e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 5 4 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. HE −E− MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX 1 2 3 A 0.80 0.95 1.10 0.031 0.037 0.043 A1 0.00 0.05 0.10 0.000 0.002 0.004 A3 0.20 REF 0.008 REF b 0.10 0.21 0.30 0.004 0.008 0.012 b6 PL C 0.10 0.14 0.25 0.004 0.005 0.010 D 1.80 2.00 2.20 0.070 0.078 0.086 0.2 (0.008) M E M E 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 BSC 0.026 BSC A3 L 0.10 0.20 0.30 0.004 0.008 0.012 HE 2.00 2.10 2.20 0.078 0.082 0.086 C STYLE 24: PIN 1.CATHODE A 2.ANODE 3.CATHODE 4.CATHODE 5.CATHODE A1 L 6.CATHODE SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 (cid:2) mm (cid:3) SCALE 20:1 inches SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 4

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: SMF24CT1G SZSMF12CT1G SMF05CT1 SMF05CT1G SMF05CT2 SMF05CT2G SMF12CT1 SMF12CT1G SMF15CT1 SMF15CT1G SMF24CT1