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  • 型号: SL15T1G
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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SL15T1G产品简介:

ICGOO电子元器件商城为您提供SL15T1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SL15T1G价格参考¥1.33-¥4.08。ON SemiconductorSL15T1G封装/规格:TVS - 二极管, 。您可以下载SL15T1G参考资料、Datasheet数据手册功能说明书,资料中有SL15T1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 15VWM 30VC SOT23TVS 二极管 - 瞬态电压抑制器 15V Single Line Low Capacitance TVS

产品分类

TVS - 二极管

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,TVS二极管,TVS 二极管 - 瞬态电压抑制器,ON Semiconductor SL15T1G-

数据手册

点击此处下载产品Datasheet

产品型号

SL15T1G

不同频率时的电容

3.5pF @ 1MHz

产品目录页面

点击此处下载产品Datasheet

产品种类

TVS 二极管 - 瞬态电压抑制器

供应商器件封装

SOT-23-3(TO-236)

其它名称

SL15T1GOSCT

击穿电压

16.7 V

功率-峰值脉冲

300W

包装

剪切带 (CT)

单向通道

-

双向通道

1

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-236-3,SC-59,SOT-23-3

封装/箱体

SOT-23-3

尺寸

1.3 mm W x 2.9 mm L x 1 mm H

峰值浪涌电流

10 A

峰值脉冲功率耗散

300 W

工作温度

-55°C ~ 150°C (TJ)

工作电压

15 V

工厂包装数量

3000

应用

通用

最大工作温度

+ 150 C

最小工作温度

- 55 C

极性

Unidirectional

标准包装

1

电压-击穿(最小值)

16.7V

电压-反向关态(典型值)

15V

电压-箝位(最大值)@Ipp

30V

电容

3.5 pF

电流-峰值脉冲(10/1000µs)

10A (8/20µs)

电源线路保护

端接类型

SMD/SMT

类型

齐纳

系列

SL05T1

钳位电压

30 V

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PDF Datasheet 数据手册内容提取

SL05T1G Series ESD Protection Diode Low Capacitance This family of surge protection offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution www.onsemi.com offers ESD protection for high speed interfaces such as communication systems, computers, and computer peripherals. 2 1 Features 3 (NC) • Surge protection Diode in Series with a Compensating Diode Offers <5 pF Capacitance MARKING • DIAGRAM ESD Protection Meeting IEC 61000−4−2, 4−4, 4−5 3 • Peak Power Rating of 300 W, 8 × 20 (cid:2)s • Lxx M(cid:2) Bi−Direction Protection Can Be Achieved By Using Two Devices 1 (cid:2) • 2 Flammability Rating UL 94 V−0 • SZ Prefix for Automotive and Other Applications Requiring Unique SOT−23 (TO−236) CASE 318 Lxx = Device Code Site and Control Change Requirements; AEC−Q101 Qualified and STYLE 26 xx = 05, 12, 15, or 24 PPAP Capable M = Date Code* • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS (cid:2) = Pb−Free Package Compliant (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary Mechanical Characteristics: depending upon manufacturing location. CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable ORDERING INFORMATION MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds Device Package Shipping† Package designed for optimal automated board assembly SL05T1G SOT−23 3000/Tape & Reel Small package size for high density applications (Pb−Free) Available in 8 mm Tape and Reel SZSL05T1G SOT−23 3000/Tape & Reel (Pb−Free) Use the Device Number to order the 7 inch/3,000 unit reel. SL12T1G SOT−23 3000/Tape & Reel Replace the “T1” with “T3” in the Device Number to order the (Pb−Free) 13 inch/10,000 unit reel. SZSL12T1G SOT−23 3000/Tape & Reel (Pb−Free) SL15T1G SOT−23 3000/Tape & Reel (Pb−Free) SZSL15T1G SOT−23 3000/Tape & Reel (Pb−Free) SL24T1G SOT−23 3000/Tape & Reel (Pb−Free) SZSL24T1G SOT−23 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2017 − Rev. 11 SL05T1/D

SL05T1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 8x20 usec (Note 1) Ppk 300 W @ TL ≤ 25°C IEC 61000−4−2 Level 4 Vpp Contact Discharge ±8 kV Air Discharge ±16 kV IEC 61000−4−4 EFT 40 A IEC 61000−4−5 Lightning 12 A Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C °PD° 225 °mW° Derate above 25°C 1.8 mW/°C Thermal Resistance Junction to Ambient R(cid:3)JA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C °PD° 300 °mW Derate above 25°C 2.4 mW/°C Thermal Resistance Junction−to−Ambient R(cid:3)JA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 2 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL IF Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VC VBRVRWM V VRWM Working Peak Reverse Voltage IR VF IT IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current (cid:4)VBR Maximum Temperature Coefficient of VBR IPP IF Forward Current VF Forward Voltage @ IF Uni−Directional ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK ELECTRICAL CHARACTERISTICS Breakdown Voltage VC, Clamping Voltage (Note 4) (Note 5) Capacitance Max Device VRWM IR @ VRWM VBR @ 1 mA (Volts) @ 1 A @ 5 A IPP @ VR = 0 V, 1 MHz (pF) Device Marking (V) ((cid:2)A) Min Max (V) (V) (A) Typ Max SL05 L05 5.0 20 6.0 8.0 9.8 11 17 3.5 5.0 SL12 L12 12 1.0 13.3 15.5 19 24 12 3.5 5.0 SL15 L15 15 1.0 16.7 18.5 24 30 10 3.5 5.0 SL24 L24 24 1.0 26.7 29 43 55 5.0 3.5 5.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. VBR measured at pulse test current of 1 mA at an ambient temperature of 25°C 5. Surge current waveform per Figure 2 www.onsemi.com 2

SL05T1G Series TYPICAL CHARACTERISTICS 10 100 tr PEAK VALUE IRSM @ 8 (cid:2)s T 90 N R (kW) 1 URRE 8700 PAPUSE ALTSKHE AC TWU RPIDORTEIHNN T(Tt PW D) HEISEC DRAEEYF =TI NH8EE (cid:2)Ds E C W E 60 PO ULS 50 HALF VALUE IRSM/2 @ 20 (cid:2)s K P A K 40 E A P 0.1 E , PK F P 30 tP P O 20 % 10 0.01 0 0.1 1 10 100 1000 0 20 40 60 80 PULSE WIDTH ((cid:2)s) t, TIME ((cid:2)s) Figure 1. Maximum Peak Power Rating Figure 2. 8 × 20 (cid:2)s Pulse Waveform 4 10 Q. E R 3.5 F z H 3 M SL05T1 1 A) 1 pF), 2.5 SL05 (cid:2)E ( E ( 2 AG TANC 1.5 SL15 LEAK 0.1 CI 1 SL24 A P A C 0.5 C, 0 0.01 @ ZERO BIAS @ 50% VRWM @ VRWM −55 25 150 TEMPERATURE (°C) Figure 3. Typical Junction Capacitance Figure 4. Typical Leakage Over Temperature www.onsemi.com 3

SL05T1G Series Applications Background This family of surge protection devices (SL05T1 series) are designed to protect sensitive electronics such as 1 2 communications systems, computers, and computer 3 3 peripherals against damage due to ESD conditions or transient voltage conditions. Because of their low 2 1 capacitance value (less than 5 pF), they can be used in high speed I/O data lines. Low capacitance is achieved by integrating a compensating diode in series with the surge Figure 6. protection which is basically based in the below theoretical An alternative solution to protect unidirectional lines, is to principle: • connect a fast switching steering diode in parallel with the Capacitance in parallel: CT = C1+C2+....+Cn SL05T1 series device. When the steering diode is • Capacitance in series: 1/CT = (1/C1)+(1/C2)+....+(1/Cn) forward−biased, the surge protection will avalanche and The Figure 5 shows the integrated solution of the SL05T1 conduct in reverse direction. It is important to note that by series device: adding a steering diode, the effective capacitance in the circuit will be increased, therefore the impact of adding a steering diode must be taken in consideration to establish whether the incremental capacitance will affect the circuit COMPENSATING Surge DIODE protection functionality or not. The Figure 7 shows the connection between the steering diode and the SL05T1 series device: Figure 5. SL05T1 DEVICE In the case that an over−voltage condition occurs in the I/O line protected by the SL05T1 series device, the surge protection is reversed−biased while the compensation diode is forward−biased so the resulting current due to the transient voltage is drained to ground. STEERING DIODE If protection in both polarities is required, an additional device is connected in inverse−parallel with reference to the Figure 7. first one, the Figure 6 illustrates the inverse−parallel Another typical application in which the SL05T1 series connection for bi−directional or unidirectional lines: device can be utilized, is to protect multiple I/O lines. The protection in each of the I/O lines is achieved by connecting two devices in inverse−parallel. The Figure 8 illustrates how multiple I/O line protection is achieved: INPUT OUTPUT Figure 8. For optimizing the protection, it is recommended to use ground planes and short path lengths to minimize the PCB’s ground inductance. www.onsemi.com 4

SL05T1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 26: END VIEW PIN 1.CATHODE 2.ANODE 3.NO CONNECTION RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com SL05T1/D 5