Si7860DP Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS DS(on) D Available 0.008 at VGS = 10 V 18 (cid:129) TrenchFET® Power MOSFET 30 0.011 at VGS = 4.5 V 15 (cid:129) PWM Optimized for High Efficiency (cid:129) New Low Thermal Resistance (cid:129) PowerPAK® Package with Low 1.07 mm Profile (cid:129) 100 % R Tested g PowerPAK SO-8 APPLICATIONS (cid:129) Buck Converter 6.15 mm S 5.15 mm - High Side or Low Side 1 S 2 (cid:129) Synchronous Rectifier S 3 G - Secondary Rectifier 4 D D 8 D 7 D 6 D 5 G Bottom View Ordering Information: Si7860DP-T1 S Si7860DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7860DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 18 11 Continuous Drain Current (TJ = 150 °C)a TA = 70 °C ID 15 8 A Pulsed Drain Current IDM ± 50 A Continuous Source Current (Diode Continuous)a IS 4.1 1.5 Avalanche Current I 30 L = 0.1 mH AS Single Pulse Avalanche Energy E 45 mJ AS T = 25 °C 5 1.8 Maximum Power Dissipationa TA = 70 °C PD 3.2 1.1 W A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg °C Soldering Recommendations (Peak Temperature)b,c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 s 20 25 Maximum Junction-to-Ambient (MOSFET)a RthJA Steady State 56 70 °C/W Maximum Junction-to-Case (Drain) Steady State R 1.8 2.3 thJC Notes: a.Surface Mounted on 1" x 1" FR4 board. b.See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71854 www.vishay.com S09-0222-Rev. E, 09-Feb-09 1

Si7860DP Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 70 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 40 A VGS = 10 V, ID = 18 A 0.0066 0.008 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 15 A 0.0090 0.011 Forward Transconductancea gfs VDS = 15 V, ID = 18 A 60 S Diode Forward Voltagea VSD IS = 3 A, VGS = 0 V 0.70 1.1 V Dynamicb Total Gate Charge Qg 13 18 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 18 A 5 nC Gate-Drain Charge Qgd 4.0 Gate Resistance Rg 0.5 1.7 3.2 Ω Turn-On Delay Time td(on) 18 27 Rise Time tr VDD = 15 V, RL = 15 Ω 12 18 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 46 70 ns Fall Time tf 19 30 Source-Drain Reverse Recovery Time trr IF = 3 A, dI/dt = 100 A/µs 40 70 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 50 VGS = 10 V thru 4 V 40 40 A) A) nt ( nt ( urre 30 urre 30 C C n n ai ai Dr 20 Dr 20 - - D D I I TC = 125 °C 3 V 10 10 25 °C - 55 °C 0 0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS- Gate-to-Source Vo ltage (V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71854 2 S09-0222-Rev. E, 09-Feb-09

Si7860DP Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.015 2500 )Ω 0.012 2000 Ciss stance ( 0.009 VGS = 4.5 V nce (pF) 1500 - On-ResiS(on) 0.006 VGS = 10 V C - Capacita 1000 Coss D R 0.003 500 Crss 0.000 0 0 10 20 30 40 50 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 6 2.00 e (V) 5 VIDD =S 1=6 1 A5 V 1.75 IVDG =S =1 61 0 A V g a e Volt 4 anc 1.50 - Gate-to-Source S 23 R - On-ResistDS(on)(Normalized) 11..0205 G V 1 0.75 0 0.50 0 4 8 12 16 20 - 50 - 25 0 25 50 75 100 125 150 T - Junction Temperature (°C) Qg - Total Gate Charge (nC) J Gate Charge On-Resistance vs. Junction Temperature 60 0.040 0.032 ) Ω A) e ( urrent ( 10 TJ = 150 °C sistanc 0.024 C e ce n-R - SourIS TJ = 25 °C - ODS(on) 0.016 ID = 16 A R 0.008 1 0.000 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71854 www.vishay.com S09-0222-Rev. E, 09-Feb-09 3

Si7860DP Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.6 200 ID = 250 µA 0.3 160 V) ce ( 0.0 W) 120 Varian ower ( S(th) - 0.3 P 80 G V - 0.6 40 - 0.9 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 1 Duty Cycle = 0.5 nt e si ective Tranmpedance 00..21 Notes: d Effmal I 0.1 PD M ormalizeTher 00..0052 1. Duty Cyt1clet,2 D = t1 N t2 2. Per Unit Base = R thJA = 125 °C Single Pulse 3. T JM - TA = P DM Z thJ A(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 nt e si ective Tranmpedance 00..21 d Effmal I 0.1 zeer 0.05 maliTh or 0.02 N Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71854. www.vishay.com Document Number: 71854 4 S09-0222-Rev. E, 09-Feb-09

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose o r the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk . Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this documen t or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000