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SI7110DN-T1-E3产品简介:

ICGOO电子元器件商城为您提供SI7110DN-T1-E3由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供SI7110DN-T1-E3价格参考以及VishaySI7110DN-T1-E3封装/规格参数等产品信息。 你可以下载SI7110DN-T1-E3参考资料、Datasheet数据手册功能说明书, 资料中有SI7110DN-T1-E3详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 20V 13.5A 1212-8MOSFET 20V 21.1A 0.0053Ohm

产品分类

FET - 单分离式半导体

FET功能

逻辑电平门

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

13.5 A

Id-连续漏极电流

13.5 A

品牌

Vishay SiliconixVishay / Siliconix

产品手册

点击此处下载产品Datasheet

产品图片

rohs

RoHS 合规性豁免无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,Vishay / Siliconix SI7110DN-T1-E3TrenchFET®

数据手册

点击此处下载产品Datasheet

产品型号

SI7110DN-T1-E3SI7110DN-T1-E3

Pd-PowerDissipation

1.5 W

Pd-功率耗散

1.5 W

RdsOn-Drain-SourceResistance

5.3 mOhms

RdsOn-漏源导通电阻

5.3 mOhms

Vds-Drain-SourceBreakdownVoltage

20 V

Vds-漏源极击穿电压

20 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

上升时间

10 ns

下降时间

10 ns

不同Id时的Vgs(th)(最大值)

2.5V @ 250µA

不同Vds时的输入电容(Ciss)

-

不同Vgs时的栅极电荷(Qg)

21nC @ 4.5V

不同 Id、Vgs时的 RdsOn(最大值)

5.3 毫欧 @ 21.1A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

PowerPAK® 1212-8

其它名称

SI7110DN-T1-E3CT

典型关闭延迟时间

36 ns

功率-最大值

1.5W

包装

剪切带 (CT)

商标

Vishay / Siliconix

商标名

TrenchFET/PowerPAK

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

PowerPAK® 1212-8

封装/箱体

PowerPAK 1212-8

工厂包装数量

3000

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

1

漏源极电压(Vdss)

20V

电流-连续漏极(Id)(25°C时)

13.5A (Ta)

系列

SI71xxDx

通道模式

Enhancement

配置

Single

零件号别名

SI7110DN-E3

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PDF Datasheet 数据手册内容提取

Si7110DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:2)(cid:7) (cid:8)(cid:6)(cid:12)(cid:14)(cid:5)(cid:11)(cid:4)(cid:15)(cid:7)(cid:5)(cid:16)(cid:16)(cid:3)(cid:6)(cid:17) (cid:1) TrenchFET(cid:2) Gen II Power MOSFET VDS (V) rDS(on) ((cid:1)) ID (A) Qg (Typ) (cid:1) New Low Thermal Resistance RoHS 0.0053 @ VGS = 10 V 21.1 PowerPAK(cid:2) Package with Low (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9) 2200 1144 1.07-mm Profile 0.0078 @ VGS = 4.5 V 17.4 (cid:1) PWM Optimized (cid:1) 100% R Tested g PowerPAK 1212-8 (cid:3)(cid:8)(cid:8)(cid:9)(cid:10)(cid:11)(cid:3)(cid:4)(cid:10)(cid:12)(cid:13)(cid:7) (cid:1) Synchronous Rectification (cid:1) Synchronous Buck 3.30 mm S 3.30 mm D 1 S 2 S 3 G 4 D 8 D G 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: Si7110DN-T1—E3 (Lead (Pb)-Free) (cid:3)(cid:18)(cid:7)(cid:12)(cid:9)(cid:5)(cid:4)(cid:2)(cid:15)(cid:16)(cid:3)(cid:19)(cid:10)(cid:16)(cid:5)(cid:16)(cid:15)(cid:6)(cid:3)(cid:4)(cid:10)(cid:13)(cid:20)(cid:7)(cid:15)(cid:21)(cid:4) (cid:15)(cid:22)(cid:15)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:12)(cid:4)(cid:25)(cid:2)(cid:6)(cid:26)(cid:10)(cid:7)(cid:2)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) (cid:3) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 VV Gate-Source Voltage VGS (cid:1)20 TA = 25(cid:3)C 21.1 13.5 CCoonnttiinnuuoouuss DDrraaiinn CCuurrrreenntt ((TTJJ == 115500(cid:3)(cid:3)CC))aa TA = 70(cid:3)C IIDD 16.9 10.8 AA Pulsed Drain Current IDM 60 Continuous Source Current (Diode Conduction)a IS 3.2 1.3 Single Avalanche Current IAS 35 A LL == 00.11 mmHH Single Avalanche Energy EAS 61 mJ TA = 25(cid:3)C 3.8 1.5 MMaaxxiimmuumm PPoowweerr DDiissssiippaattiioonnaa TA = 70(cid:3)C PPDD 2.0 0.8 WW Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 (cid:3)(cid:3)CC Soldering Recommendations (Peak Temperature)b,c 260 (cid:4)(cid:25)(cid:2)(cid:6)(cid:16)(cid:3)(cid:9)(cid:15)(cid:6)(cid:2)(cid:7)(cid:10)(cid:7)(cid:4)(cid:3)(cid:13)(cid:11)(cid:2)(cid:15)(cid:6)(cid:3)(cid:4)(cid:10)(cid:13)(cid:20)(cid:7) Parameter Symbol Typical Maximum Unit t (cid:2) 10 sec 24 33 MMaaxxiimmuumm JJuunnccttiioonn-ttoo-AAmmbbiieennttaa RRthJA Steady State 65 81 (cid:3)CC//WW Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73143 www.vishay.com S-51413—Rev. C, 01-Aug-05 1

Si7110DN Vishay Siliconix (cid:16)(cid:12)(cid:7)(cid:1)(cid:2)(cid:4)(cid:15)(cid:7)(cid:8)(cid:2)(cid:11)(cid:10)(cid:1)(cid:10)(cid:11)(cid:3)(cid:4)(cid:10)(cid:12)(cid:13)(cid:7)(cid:15)(cid:21)(cid:4) (cid:15)(cid:22)(cid:15)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:12)(cid:4)(cid:25)(cid:2)(cid:6)(cid:26)(cid:10)(cid:7)(cid:2)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) (cid:28) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 (cid:2)A 1.5 2.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = (cid:1)20 V (cid:1)100 nA ZZeerroo GGaattee VVoollttaaggee DDrraaiinn CCuurrrreenntt IIDDSSSS VDS =V 2D0S V=, 2V0G SV ,= V 0G SV ,= T 0J =V 55(cid:3)C 15 (cid:2)(cid:2)AA On-State Drain Currenta ID(on) VDS (cid:3) 5 V, VGS = 10 V 40 A DDrraaiinn--SSoouurrccee OOnn--SSttaattee RReessiissttaanncceeaa rrDDSS((oonn)) VGS = 10 V, ID = 21.1 A 0.0044 0.0053 (cid:1)(cid:1) VGS = 4.5 V, ID = 17.4 A 0.0064 0.0078 Forward Transconductancea gfs VDS = 15 V, ID = 21.1 A 71 S Diode Forward Voltagea VSD IS = 3.2 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 14 21 Gate-Source Charge Qgs VVDDSS = 1100 VV,, VVGGSS = 44..55 VV,, IIDD = 2211..11 AA 7 nnCC Gate-Drain Charge Qgd 4.5 Gate-Resistance Rg f = 1 MHz 0.7 1.4 2.1 (cid:1) Turn-On Delay Time td(on) 12 20 Rise Time tr VVDDDD == 1100 VV,, RRLL == 1100 (cid:1)(cid:1) 10 15 Turn-Off Delay Time td(off) ID (cid:4) 1 A, VGEN = 10 V, Rgg = 6 (cid:1) 36 55 nnss Fall Time tf 10 15 Source-Drain Reverse Recovery Time trr IF = 3.2 A, di/dt = 100 A/(cid:2)s 30 60 Notes a. Pulse test; pulse width (cid:2) 300 (cid:2)s, duty cycle (cid:2) 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (cid:4)(cid:17)(cid:8)(cid:10)(cid:11)(cid:3)(cid:9)(cid:15)(cid:11)(cid:25)(cid:3)(cid:6)(cid:3)(cid:11)(cid:4)(cid:2)(cid:6)(cid:10)(cid:7)(cid:4)(cid:10)(cid:11)(cid:7)(cid:15)(cid:21)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 48 48 A) A) nt ( 36 nt ( 36 e e urr urr C C n n ai 24 ai 24 Dr Dr – – TC = 125(cid:3)C D D I 12 I 12 25(cid:3)C 3 V –55(cid:3)C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com Document Number: 73143 2 S-51413—Rev. C, 01-Aug-05

Si7110DN Vishay Siliconix (cid:4)(cid:17)(cid:8)(cid:10)(cid:11)(cid:3)(cid:9)(cid:15)(cid:11)(cid:25)(cid:3)(cid:6)(cid:3)(cid:11)(cid:4)(cid:2)(cid:6)(cid:10)(cid:7)(cid:4)(cid:10)(cid:11)(cid:7)(cid:15)(cid:21)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) On-Resistance vs. Drain Current Capacitance 0.010 2500 Ciss ) 0.008 2000 (cid:1) ance ( VGS = 4.5 V e (pF) sist 0.006 anc 1500 On-Re VGS = 10 V apacit – 0.004 – C 1000 n) C S(o Coss rD 0.002 500 Crss 0.000 0 0 10 20 30 40 50 60 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 e (V) 8 VIDD =S 2=1 1.10 V A 1.4 VIDG =S 2=1 1.10 AV g Volta nce Gate-to-Source 46 – On-Resistaon)(Normalized) 11..02 – DS( S r G 2 0.8 V 0 0.6 0 5 10 15 20 25 30 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature ((cid:3)C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.024 60 ID = 5 A 0.020 ) nt (A) TJ = 150(cid:3)C (cid:1)nce ( 0.016 ID = 21.1 A e a e Curr 10 Resist 0.012 – SourcS TJ = 25(cid:3)C – On-on) 0.008 I S( D r 0.004 0.000 1 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 73143 www.vishay.com S-51413—Rev. C, 01-Aug-05 3

Si7110DN Vishay Siliconix (cid:4)(cid:17)(cid:8)(cid:10)(cid:11)(cid:3)(cid:9)(cid:15)(cid:11)(cid:25)(cid:3)(cid:6)(cid:3)(cid:11)(cid:4)(cid:2)(cid:6)(cid:10)(cid:7)(cid:4)(cid:10)(cid:11)(cid:7)(cid:15)(cid:21)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) Threshold Voltage Single Pulse Power, Juncion-to-Ambient 0.4 50 0.2 ID = 250(cid:3)(cid:2)A 40 –0.0 V) ariance ( –0.2 wer (W) 30 V o S(th) –0.4 P 20 G V –0.6 10 –0.8 –1.0 0 –50 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 TJ – Temperature ((cid:3)C) Time (sec) Safe Operating Area 100 IDM Limited *Limited by rDS(on) P(t) = 0.0001 10 P(t) = 0.001 A) nt ( P(t) = 0.01 Curre 1 LIiDm(oitne)d P(t) = 0.1 n ai Dr P(t) = 1 – P(t) = 10 ID 0.1 STinAg =le 2 P5u(cid:3)lCse dc BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS (cid:5) minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e ctive Transimpedance 0.2 Notes: ed Effeermal I 0.1 0.1 PDM malizTh 0.05 t1 Nor 0.02 1. Duty Cyclet,2 D = t1 2. Per Unit Base = RthtJ2A = 65(cid:3)C/W Single Pulse 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 73143 4 S-51413—Rev. C, 01-Aug-05

Si7110DN Vishay Siliconix (cid:4)(cid:17)(cid:8)(cid:10)(cid:11)(cid:3)(cid:9)(cid:15)(cid:11)(cid:25)(cid:3)(cid:6)(cid:3)(cid:11)(cid:4)(cid:2)(cid:6)(cid:10)(cid:7)(cid:4)(cid:10)(cid:11)(cid:7)(cid:15)(cid:21)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 nt Duty Cycle = 0.5 e ed Effective Transiermal Impedance 0.1 00..21 Single Pulse zh aliT m 0.05 Nor 0.02 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73143. Document Number: 73143 www.vishay.com S-51413—Rev. C, 01-Aug-05 5

Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1

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