Si3446ADV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) • Halogen-free According to IEC 61249-2-21 0.037 at V = 4.5 V 6 Definition GS 20 5.6 nC (cid:129) TrenchFET® Power MOSFET 0.065 at V = 2.5V 6 GS (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) Load Switch for Portable Applications (cid:129) Small High Frequency DC/DC converter TSOP-6 Top View D D 1 6 D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code AC XXX Lot Traceability G G 3 4 S and Date Code (3) Part # Code 2.85 mm (4) S Ordering Information: Si3446ADV-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si3446ADV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 T = 25 °C 6a C T = 70 °C 5.9 Continuous Drain Current (T = 150 °C) C I J T = 25 °C D 5.8b, c A T = 70 °C 4.7b, c A A Pulsed Drain Current IDM 20 T = 25 °C 2.7 Continuous Source-Drain Diode Current TC = 25 °C IS 1.7b, c A T = 25 °C 3.2 C T = 70 °C 2.1 Maximum Power Dissipation TCA = 25 °C PD 2b, c W TA = 70 °C 1.25b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 51 62.5 °C/W Maximum Junction-to-Foot Steady State RthJF 32 39 Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 °C/W. Document Number: 73772 www.vishay.com S09-0702-Rev. B, 27-Apr-09 1

Si3446ADV Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VVGDSS (tThe) mTepmerpaeturaretu Creo Cefofiecfifeicnitent ΔVΔVGSD(Sth/T)/JTJ ID = 250 µA 2-1 4.5 mV/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.8 1.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS =V 2D0S V =, V20G SV ,= V 0G VS, =T J0 =V 5 5 °C 110 µA On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea RDS(on) VVGGSS == 42..55 VV,, IIDD == 51..85 AA 00..003513 00..003675 Ω Forward Transconductancea gfs VDS = 10 V, ID = 5.8 A 15 S Dynamicb Input Capacitance Ciss 640 Output Capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 110 pF Reverse Transfer Capacitance Crss 60 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 5.8 A 13 20 5.6 9 nC Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 5.8 A 1.45 Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 2.8 Ω Turn-On Delay Time td(on) 50 75 Rise Time tr VDD = 10 V, RL = 2.1 Ω 120 180 Turn-Off DelayTime td(off) ID ≅ 4.7 A, VGEN = 4.5 V, Rg = 1 Ω 30 45 Fall Time tf 40 60 ns Turn-On Delay Time td(on) 7 15 Rise Time tr VDD = 10 V, RL = 2.1 Ω 86 130 Turn-Off DelayTime td(off) ID ≅ 4.7 A, VGEN = 10 V, Rg = 1 Ω 25 40 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C 6 A Pulse Diode Forward Current ISM 20 Body Diode Voltage VSD IS = 4.7 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr 21 40 ns Body Diode Reverse Recovery Charge Qrr I = 4.7 A, dI/dt = 100 A/µs, T = 25 °C 12 25 nC Reverse Recovery Fall Time ta F J 13 ns Reverse Recovery Rise Time tb 8 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73772 2 S09-0702-Rev. B, 27-Apr-09

Si3446ADV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 VG S = 3 V thru 5 V 16 8 ) A ( t n e r r u C n i a r D -D 182 VG S = 2.5 V )A( tnerruC niarD 46 TC = - 55 °C I - D TC = 125 °C I 4 VG S = 2 V 2 TC = 25 °C VG S = 1.5 V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 2.5 VD S - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 900 750 Ω- On-Resistance (m)on) 00..0068 VG S = 2.5 V i - C ) F p ( e c n a t c a p a C 346050000 Ci ss DS( 0.04 R VG S = 4.5 V Co ss 150 Cr ss 0.02 0 0 4 8 12 16 20 0 4 8 12 16 20 ID - Drain Current (A) VD S - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.6 ) V e t l e c o S t - e G ( g a o V r u - o t a 468 ID = 5.8 A VD S = 10 V VD S = 16 V - On-Resistance DS(on)(Normalized) 0111....0248 ID = 5.8 A VG S V=G 4S. 5= V2 .5 V - R V SG 2 0.6 0 0.4 0 2 4 6 8 10 12 14 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73772 www.vishay.com S09-0702-Rev. B, 27-Apr-09 3

Si3446ADV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 0.10 Ω) ID = 5.8 A m 0.09 25 °C e ( 10 nc a 0.08 ) A ( t n e r r u C e c r u o I - S S TJ = 150 °C TJ = 25 °C Drai-to-Source On-Resist 0000....00004567 - n) S(o 0.03 125 °C D R 1 0.02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VG S - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Temperature 1.4 50 1.3 1.2 ID = 250 µA 40 1.1 ( V ) V G h t ( S ) 01..90 r (W)e w o P 3200 0.8 0.7 10 0.6 0.5 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* BVDSS Limited 10 ) A ( t n e r r u C 1 1 ms n a r D i 10 ms I - D 110 s0 ms 0.1 10 s DC TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VD S - Drain-to-Source Voltage (V) * VGS > minimum VG S at which RDS(on)isspecified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 73772 4 S09-0702-Rev. B, 27-Apr-09

Si3446ADV Vishay Semiconductors TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 10 4 8 3 I ) A ( t n e r r u C n i a r D - D 46 Package Limited ) W ( n o i t a p i s s i D r e w o P 12 2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73772 www.vishay.com S09-0702-Rev. B, 27-Apr-09 5

Si3446ADV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 t n e i s n a r T e v i t c e f f E d e z i l a m e c n a d e p m I l a m r e h T 0.1 000...0215 NPo DteMs : t1 r o N 0.02 1. Duty Cyclet,2 D = t1 t2 2. Per Unit Base = Rt hJA = 75 °C/W Single Pulse 3. TJ M – TA = PD MZ thJA (t) 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 t n e i s n a r T e v i t c e f f E d e z i l a m I l a m e e c n a d e p m r h T 0.1 000..000..1252 r o N Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73772. www.vishay.com Document Number: 73772 6 S09-0702-Rev. B, 27-Apr-09

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