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  • 型号: SESD0802Q4UG-0020-090
  • 制造商: CORCOM/TYCO ELECTRONICS
  • 库位|库存: xxxx|xxxx
  • 要求:
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SESD0802Q4UG-0020-090产品简介:

ICGOO电子元器件商城为您提供SESD0802Q4UG-0020-090由CORCOM/TYCO ELECTRONICS设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SESD0802Q4UG-0020-090价格参考¥2.68-¥7.38。CORCOM/TYCO ELECTRONICSSESD0802Q4UG-0020-090封装/规格:TVS - 二极管, 9.2V (Typ) Clamp 2A (8/20µs) Ipp Tvs Diode Surface Mount 0802。您可以下载SESD0802Q4UG-0020-090参考资料、Datasheet数据手册功能说明书,资料中有SESD0802Q4UG-0020-090 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
品牌

TE Connectivity / Raychem

产品目录

电路保护

描述

ESD 抑制器 4-CH MINI 9V Uni-Di .20pF 20kV SESD

产品分类

ESD 抑制器

产品手册

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产品图片

rohs

符合RoHS

产品系列

TE Connectivity / Raychem SESD0802Q4UG-0020-090

mouser_ship_limit

该产品可能需要其他文件才能进口到中国。

产品型号

SESD0802Q4UG-0020-090

产品种类

ESD 抑制器

击穿电压

9 V

商标

TE Connectivity / Raychem

封装

Reel

封装/箱体

0802

工作温度范围

- 55 C to + 125 C

工作电压

9 V

工厂包装数量

5000

电容

0.2 pF

端接类型

SMD/SMT

系列

SESD

通道

4 Channels

钳位电压

9.18 V

零件号别名

RF3076-000

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PDF Datasheet 数据手册内容提取

TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays SESD Series Ultra Low Capacitance Diode Arrays RoHS Pb GREEN ELV Description The SESD series Ultra Low Capacitance Diode Arrays provides signal integrity-preserving unidirectional ESD protection for the world’s most challenging high speed serial interfaces. Compelling packaging options including the standard 1004 DFN 2.5 mm x 1.0 mm layout, the board space-friendly 0802 DFN and 1103 DFN minimize trace layout complexity, and save significant PCB space. The 0402 DFN provides the most flexibility for PCB layout purposes. This series is rated in excess of 20kV contact ESD protection (IEC 61000-4-2) while maintaining extremely low leakage and dynamic resistance, and is offered in the industry’s most progressive and popular footprints. The SESD series sets higher standards for signal Pinout integrity and usability. 0402 DFN array 0802 DFN array Features 1 2 4 3 • 0.20pF TYP capacitance • AEC-Q101 qualified • ESD, IEC 61000-4-2, • Moisture Sensitivity ±20kV contact, ±20kV air Level(MSL-1) 1 G 2 • Low clamping voltage • ELV Compliant 3 of 9.2V @ I =2.0A • RoHS Compliant and PP (t =8/20μs) Lead Free P • Low profile DFN array • PPAP capable 1004 DFN array 1103 DFN array packages 1 2 3.G 4 5 3 2 G 1 • Facilitates excellent signal integrity 10 9 8.G 7 6 4 5 6 Applications • USB 3.1, 3.0, 2.0 • Tablet PC and external Bottom View • HDMI 2.0, 1.4a, 1.3 storage with high speed interfaces • DisplayPort(TM) • Applications requiring • V-by-One®) high ESD performance in Functional Block Diagram • Thunderbolt small packages 1 2 4 5 1 2 • LVDS interfaces • Automotive applications • Consumer, mobile and portable electronics Additional Information G, 3, 8 3 0802/1004 DFN array 0402 DFN array Datasheet Resources Samples 1 2 3 4 5 6 G 1103 DFN array © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/19

TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t=8/20μs) 2.0 A PP p T Operating Temperature -55 to 125 °C OP T Storage Temperature -55 to 150 °C STOR CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics - (T =25°C) OP Parameter Test Conditions Min Typ Max Units Input Capacitance @ V = 0V, f = 3GHz 0.20 0.22 pF R Breakdown Voltage V @ I=1mA 9.00 V BR T Reverse Working Voltage 7.0 V Reverse Leakage Current I @ V =5.0V 25 50 nA L RWM Clamping Voltage V @ I =2.0A 9.20 V CL PP Peak Pulse Current t=8/20μs 2.0 A P IEC61000-4-2 (Contact) ±20 ESD Withstand Voltage kV IEC 61000-4-2 (Air) ±20 Insertion Loss Diagram Insertion Loss Diagram - 1103 DFN Array 0 0 -5.0 -5.0 oss (dB) -10.0 ss (dB) -10.0 L o on -15.0 n L -15.0 21 Inserti -20.0 1 Insertio -20.0 S -25.0 S2 -25.0 -30.0 -30.0 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) Frequency (Hz) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/19

TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Component IV Curve 1.0 0.8 0.6 0.4 0.2 )Am 0.0 ( tn -0.2 erruC -0.4 -0.6 -0.8 -1.0 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Voltage (V) USB3.0 Eye Diagram 5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern Without SESD Device With SESD Device Soldering Parameters Reflow Condition Pb – Free assembly t P T - Temperature Min (T ) 150°C P CCrriittiiccaall ZZoonnee s(min) RRaammpp--uupp TTLL ttoo TTPP Pre Heat - Temperature Max (T ) 200°C - Time (min to max) (tss(m)ax) 60 – 180 secs eruta TS(maTx)L tL Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max rep RRaammpp--ddoowwn TS(max) to TL - Ramp-up Rate 3°C/second max meT T PPrreehheeaatt - Temperature (T) (Liquidus) 217°C S(min) Reflow L tS - Temperature (t) 60 – 150 seconds L Peak Temperature (T) 260+0/-5 °C 25 Time within 5°C of aPctual peak Temperature (t) 20 – 40 seconds time to peak temperature Time p Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (T) 8 minutes Max. P Do not exceed 260°C © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/19

TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Package Dimensions — 0402 DFN Array Millimeters Inches Symbol Min Typ Max Min Typ Max A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0 - 0.05 0 - 0.002 A3 0.13 ref. 0.005 ref. D 0.55 0.60 0.65 0.022 0.024 0.026 E 0.95 1.00 1.05 0.037 0.039 0.041 K 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.018 0.020 0.022 L2 0.20 0.25 0.30 0.008 0.010 0.012 b 0.10 0.15 0.20 0.004 0.006 0.008 e1 0.35 BSC 0.014 BSC e2 0.65 BSC 0.026 BSC Symbol Millimeters Inches A 0.60 0.024 B 1.00 0.039 C 0.23 0.009 D 0.35 0.014 D1 0.35 0.014 E 0.15 0.006 F 0.30 0.012 Pad Layout Embossed Carrier Tape & Reel Specification — 0402 DFN Array T D0 P2 P0 Y E1 Symbol Millimeters A0 0.70+/-0.05 D1 B0 1.15+/-0.05 F W D0 ø 1.55 + 0.05 B0 D1 ø 0.40 +/- 0.05 E1 1.75+/-0.10 K0 F 3.50+/-0.05 A0 K0 0.47+/-0.05 Section Y - Y Y P1 P0 4.00+/-0.10 P1 2.00+/-0.05 User Feeding Direction P2 2.00+/-0.05 W 8.00 +/-0.10 T 0.20+/-0.05 Pin 1 Location © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/19

TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Package Dimensions — 0802 DFN Array Millimeters Inches Symbol Min Typ Max Min Typ Max A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0 0.02 0.05 0 -- 0.002 A3 0.127 ref 0.005 ref. D 0.50 0.60 0.70 0.020 0.024 0.028 E 1.90 2.00 2.10 0.075 0.079 0.083 b 0.15 0.20 0.25 0.006 0.008 0.010 b1 0.25 0.30 0.36 0.010 0.012 0.014 L 0.25 0.30 0.36 0.010 0.012 0.014 L1 0.35 0.40 0.45 0.014 0.016 0.018 L2 0.05 BSC 0.002 BSC e 0.40 BSC 0.016 BSC e1 0.45 BSC 0.018 BSC e2 0.25 BSC 0.010 BSC N 4 4 Symbol Millimeters Inches A 0.60 0.024 B 2.00 0.079 C 0.30 0.012 D 0.30 0.012 E 0.25 0.010 F 0.10 0.004 F1 0.15 0.006 G 0.40 BSC 0.016 BSC G1 0.45 BSC 0.018 BSC Pad Layout Embossed Carrier Tape & Reel Specification — 0802 DFN Array T D0 P2 P0 Y E1 Symbol Millimeters A0 0.81+/-0.05 D1 B0 2.21+/-0.05 F W D0 ø 1.50+0.10/-0 B0 D1 ø 0.40 min E1 1.75+/-0.10 F 3.50+/-0.05 K0 K0 0.46+/-0.05 A0 Section Y - Y Y P1 P0 4.00+/-0.10 P1 2.00+/-0.10 User Feeding Direction P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.25+/-0.20 Pin 1 Location © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/19

TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays A1 D 8xb LxN Package Dimensions — 1004 DFN Array D A1 8xb5 LxN 6 Symbol Millimeters Inches Min Typ Max Min Typ Max 4 7 L1 2x5 6 A 0.33 0.38 0.43 0.013 0.015 0.017 E 3 R1 8b1 2x A1 0.00 0.02 0.05 0 -- 0.002 L1e 21x4Gnd 7Gnd A D3 0.90 0.1 12.070 r e f. 1.10 0.035 0. 000.053 r9e f. 0.043 E e1e Gnd32 R1 2xR Gnd89b1 2x E 2.40 2.50 2.60 0.094 0.098 0.102 b 0.15 0.20 0.25 0.006 0.008 0.010 21 9N=10 b1 0.35 0.40 0.45 0.014 0.016 0.018 e 2xR A3 1 =10 L 0.33 0.38 0.43 0.013 0.015 0.017 A N L1 0.00 0.10 0.15 0.000 0.004 0.006 A3 e 0.50 BSC 0.020 BSC A e1 0.50 BSC 0.020 BSC SIDE VIEW 1 TOP VIEW SIDE VIEW 2 BOTTOM VIEW R 0.08 BSC 0.003 BSC (Front) SIDE VIEW 1 TOP VIEW SIDE VIEW 2 BOTTOM VIEW R1 0.13 BSC 0.005 BSC (Front) N 10 10 END VIEW 1 END VIEW 2 END VIEW 1 END VIEW 2 Symbol Millimeters Inches A 1.20 0.047 AA 2x2 Fx 2Fx2 xF 1F1 AA 2x2 Fx 2Fx2 Fx1 F1 BC 20..2500 00..008270 2x D21x D1 D 0.20 0.008 D1 0.40 0.016 B B 4x G GG41x41 xG G BB DD11 G1 EF 00..3200 00..001028 4x G 4x4 Gx G G1 F1 0.20 0.008 8x D G 0.50 BSC 0.020 BSC 8x D E 88xx DD E G1 1.00 BSC 0.039 BSC E 8x C 8x C E 8x CRecommended 8x C Alternate Recommended Alternate Pad Layout Pad Layout Embossed Carrier Tape & Reel Specification — 1004 DFN Array T D0 P2 P0 Y E1 Symbol Millimeters A0 1.20+/-0.05 D1 B0 2.70+/-0.05 F W D0 ø 1.50+0.10/-0 B0 D1 ø 0.50 min E1 1.75+/-0.10 K0 F 3.50+/-0.05 A0 K0 0.51+/-0.10 Section Y - Y Y P1 P0 4.00+/-0.10 P1 4.00+/-0.10 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.25+/-0.05 © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/19

TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Package Dimensions — 1103 DFN Array Millimeters Inches Symbol Min Typ Max Min Typ Max A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0.00 0.02 0.05 0 -- 0.002 A3 0.127 ref. 0.005 ref. D 0.70 0.80 0.90 0.027 0.031 0.035 E 2.70 2.80 2.90 0.106 0.110 0.114 b 0.15 0.20 0.25 0.006 0.008 0.010 b1 0.25 0.30 0.35 0.010 0.012 0.014 L 0.30 0.35 0.40 0.012 0.014 0.016 L1 0.50 0.55 0.60 0.019 0.021 0.024 L2 0.05 BSC 0.002 BSC e 0.40 BSC 0.016 BSC e1 0.45 BSC 0.018 BSC e2 0.40 BSC 0.016 BSC N 6 6 Symbol Millimeters Inches A 0.80 0.031 B 2.80 0.110 C 0.35 0.014 D 0.30 0.012 E 0.45 0.018 F 0.10 0.004 F1 0.15 0.006 G 0.40 BSC 0.016 BSC G1 0.45 BSC 0.018 BSC Pad Layout Embossed Carrier Tape & Reel Specification — 1103 DFN Array Symbol Millimeters T D0 P2 P0 Y E1 A0 1.00+/-0.05 B0 3.00+/-0.05 D1 D0 ø 1.50+0.10/-0 F D1 ø 0.50 min W B0 E1 1.75+/-0.10 F 3.50+/-0.05 K0 0.51+/-0.05 K0 P0 4.00+/-0.10 A0 Section Y - Y Y P1 P1 4.00+/-0.10 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.25+/-0.05 © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/19

TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Part Numbering System Part Marking System SESD xxxx Q xUG0020–090 Breakdown Voltage SESD product 090: 9.0V (TYP) C MC Package Input Capacitance 0402 0020: 0.20pF (TYP) 0802 1004 Common GND pin 0402 0802 1103 Directional DFN Array Package U: Unidirectional 4C 6C No of channel 2: Two Channels 4: Four Channels 6: Six Channels 1004 1103 Ordering Information Part Number Package Ordering Part Number Minimum Order Quantity SESD0402Q2UG-0020-090 0402 DFN Array RF2946-000 50,000 SESD0802Q4UG-0020-090 0802 DFN Array RF3076-000 25,000 SESD1004Q4UG-0020-090 1004 DFN Array RF3077-000 25,000 SESD1103Q6UG-0020-090 1103 DFN Array RF3078-000 25,000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/19