SE2470 AlGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18¡ (nominal) beam angle • Wide operating temperature range ( 55¡C to +125¡C) • Higher power output than GaAs at equivalent drive currents • Ideal for direct mounting to printed circuit boards • 880 nm wavelength • Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington INFRA--1.TIF DESCRIPTION OUTLINE DIMENSIONSin inches (mm) The SE2470 is a high intensity aluminum gallium Tolerance 3 plc decimals ±0.005(0.12) arsenide infrared emitting diode mounted in a 2 plc decimals ±0.020(0.51) hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. DIM_002.ds4 h Honeywell reserves the right to make 20 changes in order to improve design and supply the best products possible.

SE2470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 75 mA Power Dissipation 125 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡C,when soldered into a double sided printed circuit board. Honeywell reserves the right to make h changes in order to improve design and 21 supply the best products possible.

SE2470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Fig. 2 Radiant Intensity vs Angular Displacement gra_111.ds4 Forward Current gra_016.ds4 1.0 1.0 0.9 0.9 iiit tt vsyaenen 00000.....45678 lii rt zaedadanmiitt synen 00000.....45678 leR 00..23 roN 00..23 0.1 0.1 0.0 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 0.0 10.0 20.0 30.0 40.0 50.0 Angular displacement - degrees Forward current - mA Fig. 3 Forward Voltage vs Fig. 4 Forward Voltage vs Forward Current gra_204.ds4 Temperature gra_202.ds4 1.8 1.6 1.7 V V 1.5 -age 11..56 -age 1.4 ltvo 1.4 ltvo 1.3 d d rroaw 11..23 rroaw 1.2 IF = 20 mA F F 1.1 1.1 1.0 1.0 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 Forward current - mA Temperature - °C Fig. 5 Spectral Bandwidth Fig. 6 Coupling Characteristics gra_011.ds4 with SD2440 gra_015.ds4 1.0 1.0 0.9 0.9 iiit tt vsyaenen 00000.....45678 li lit zaedghmt rrcuen 00000.....45678 leR 00..23 roN 0.3 0.2 0.1 0.1 0.0 760 800 840 880 920 960 1000 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Wavelength - nm Lens-to-lens separation - inches h Honeywell reserves the right to make 22 changes in order to improve design and supply the best products possible.

SE2470 AlGaAs Infrared Emitting Diode Fig. 7 Normalized Power Output vs Temperature gra_131.ds4 2.0 t u 1.8 p tu 1.6 o r e 1.4 w 1.2 o dp 1.0 IF = 50 mA e .8 z liam ..46 IF = 20 mA roN .2 0 -50 -25 0 +25 +50 +75 +100 +125 T - Ambient temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make h changes in order to improve design and 23 supply the best products possible.