Red Enhanced Bi-Cell Silicon Photodiode SD 113-24-21-021 WWW.LUNAINC.COM Precision – Control – Results PACKAGE DIMENSIONS INCH [mm] 0.130[3.30] 0.114[2.90] 45° .075 [1.91] 3X Ø.018 [0.46] 1 Ø.200 [5.08] Ø.236 [6.00] PIN CIRCLE Ø.228 [5.79] 2 100° Ø.323 [8.20] VIEWING Ø.315 [8.00] ANGLE Ø .362 [9.19] 3 Ø .357 [9.07] GLASS ABOVE CAP 3X .500 [12.7] MIN TOP EDGE 1 ANODE CELL #1 CHIP DIMENSIONS INCH [mm] CELL 1 .120 [3.05] 2 CASE GROUND & COMMON CATHODE CELL 2 1 2X .048 [1.22] ACTIVE AREA 3 ANODE CELL #2 .134 [3.40] SCHEMATIC 2 .004 [0.10] GAP TO-5 PACKAGE 2X .100 [2.54] ACTIVE AREA DESCRIPTION FEATURES The SD 113-24-21-021 is a red enhanced Bi-Cell silicon photodiode used • Low Noise for nulling, centering, or measuring small positional changes packaged in • Red Enhanced a hermetic TO-5 metal package. • High Shunt Resistance • High Response RELIABILITY APPLICATIONS This Luna high-reliability device is in principle able to meet military test • Emitter Aligment requirements (Mil-STD-750, Mil-STD-883) after proper screening and • Position Sensing group test. • Medical and Industrial Contact Luna for recommendations on specific test conditions and procedures. ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 50 V T = 23°C UNLESS OTHERWISE NOTED a Storage Temperature -50 - 150 °C - Operating Temperature -40 to +125 °C - Soldering Temperature* - - +240 °C - * 1/16 inch from case for 3 seconds max. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is Page 1/2 REV 01-04-16 assumed for possible inaccuracies or omission. Specifications are subject to change without notice. © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935

Red Enhanced Bi-Cell Silicon Photodiode SD 113-24-21-021 WWW.LUNAINC.COM Precision – Control – Results T = 23°C UNLESS NOTED OTHERWISE OPTO-ELECTRICAL PARAMETERS a PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Dark Current V = 5 V - 0.9 5.0 nA R Shunt Resistance V = 10 mV 250 - - MΩ R V =0V; f = 1 MHz - 60 - R Junction Capacitance pF V =10V; f = 1 MHz - 13 - R Spectral Application Range Spot Scan 350 - 1100 nm l= 633nm, V = 0 V .32 .36 - R Reponsivity A/W l= 900nm, V = 0 V .50 .55 - R Breakdown Voltage I=10 µA - 50 - V Noise Equivalent Power V = 0V @ l=950nm - 2.5x10-14 - W/ √ R Hz RL = 50 Ω,V = 0 V - 190 - R Response Time** nS RL = 50 Ω,V = 10 V - 13 - R TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.7 0.6 0.5 W / y,A 0.4 vit nsi 0.3 o p s e R 0.2 0.1 0 300 400 500 600 700 800 900 1000 1100 Wavelenght, nm Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is Page 2/2 REV 01-04-16 assumed for possible inaccuracies or omission. Specifications are subject to change without notice. © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935