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  • 型号: SB360E-G
  • 制造商: COMCHIP TECHNOLOGY
  • 库位|库存: xxxx|xxxx
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SB360E-G产品简介:

ICGOO电子元器件商城为您提供SB360E-G由COMCHIP TECHNOLOGY设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SB360E-G价格参考¥2.13-¥4.26。COMCHIP TECHNOLOGYSB360E-G封装/规格:二极管 - 整流器 - 单, 肖特基 通孔 二极管 60V 3A DO-201AD。您可以下载SB360E-G参考资料、Datasheet数据手册功能说明书,资料中有SB360E-G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 60V 3A DO201AD肖特基二极管与整流器 Low VF ESD 3A 60V Schottky Rectifier

产品分类

单二极管/整流器分离式半导体

品牌

Comchip Technology

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,Comchip Technology SB360E-G-

数据手册

点击此处下载产品Datasheet

产品型号

SB360E-G

不同If时的电压-正向(Vf)

700mV @ 3A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

500µA @ 60V

二极管类型

肖特基

产品

Schottky Rectifiers

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=19180

产品目录页面

点击此处下载产品Datasheet

产品种类

肖特基二极管与整流器

供应商器件封装

DO-201AD

其它名称

641-1417-1

包装

剪切带 (CT)

反向恢复时间(trr)

-

商标

Comchip Technology

安装类型

通孔

安装风格

Through Hole

封装

Reel

封装/外壳

DO-201AD,轴向

封装/箱体

DO-201AD

峰值反向电压

60 V

工作温度-结

-65°C ~ 150°C

工厂包装数量

1200

技术

Silicon

最大反向漏泄电流

0.5 mA

最大浪涌电流

80 A

标准包装

1

正向电压下降

0.7 V

正向连续电流

3 A

热阻

40°C/W Ja

电压-DC反向(Vr)(最大值)

60V

电流-平均整流(Io)

3A

系列

SB360E

速度

快速恢复 =< 500 ns,> 200mA(Io)

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PDF Datasheet 数据手册内容提取

Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free 1.0(25.4) Min. wheeling and polarity protection. 0.210(5.3) 0.189(4.8) -Silicon epitaxial planar chips. -ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) 0.375(9.5) 0.287(7.3) -Lead-free part, meet RoHS requirements. Mechanical data -Epoxy: UL94-V0 rated flame retardant 1.0(25.4) Min. -Case: Molded plastic body DO-201AD 0.052(1.3) 0.048(1.2) -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end Dimensions in inches and (millimeter) -Mounting Position: Any -Weight: 1.12 grams Electrical Characteristics (at TA=25°C unless otherwise noted) Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol SB SB SB SB SB SB SB Unit 320E-G 340E-G 345E-G 350E-G 360E-G 380E-G 3100E-G Maximum recurrent peak reverse voltage VRRM 20 40 45 50 60 80 100 V Maximum RMS voltage VRMS 14 28 30 35 42 56 70 V Maximum DC blocking voltage VDC 20 40 45 50 60 80 100 V Maximum average forward rectified current I(AV) 3.0 A 0.5” (12.7mm) lead length at TA=75°C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM 80 A (JEDEC method) TL=110°C Maximum forward voltage at 3.0A (Note 1) VF 0.50 0.70 0.85 V M a x i m u m DC reverse current TA= 25°C 0.5 At rated DC blocking voltage IR mA TA=100°C 30 20 Typical junction capacitance (Note 2) CJ 250 pF RθJA 40.0 Typical thermal resistance (Note 3) °C/W RθJL 20.0 Operating junction temperature range TJ -65 to +125 -65 to +150 °C Storage temperature range TSTG -65 to +150 °C NOTES: 1. Pulse test : 300µS pulse width, 1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. 3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.500” (12.7mm) lead length with 2.5x2.5” (63.5x63.5mm) copper pad. REV:A QW-BB042 Page 1 Comchip Technology CO., LTD.

Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist RATING AND CHARACTERISTIC CURVES (SB320E-G Thru. SB3100E-G) Fig.1- Forward Current Derating Curve Fig.2- Maximum Non-repetitive Peak Forward Surge Current 3.6 100 Current, (A) 32..04 Current, (A) ward 1.8 SB320E-G ~ SB345E-G Surge 10 or d age F 1.2 SB350E-G ~ SB3100E-G orwar Aver 0.6 single phase half wave 60Hz ak F TL=110°C resistive or inductive load Pe 8.3mS single half sine-wave 3.75”(9.5mm) lead length (JEDEC Method) 0 1 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature, (OC) Number of Cycles at 60Hz Fig.3- Typical Instantaneous Forward Fig.4A- Typical Reverse Characteristics Characteristics 100 100 SB320E-G - SB345E-G A) SB320E-G - SB345E-G mA) ent, ( nt, ( 10 Curr 10 urre TJ=125°C ard SB350E-G - SB360E-G se C 1.0 w er us For s Rev 0.1 TJ=75°C o 1.0 u e o n e a n ant nta TJ=25°C nst sta 0.01 I n SB380E-G - SB3100E-G I 0.001 0.1 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.5- Typical Junction Capacitance Fig. 4B- Typeical Reverse Characteristic 1000 1000 A) u TJ=150°C e, (pF) Current, ( 100 TJ=125°C cn e a s cit er TJ=100°C a 100 v Cap Re 10 SB350E-G - SB3100E-G on us cti eo n n Ju nta 1.0 TJ=25°C a f=1.0MHz nst TJ=25°C I 10 0.1 0.1 1.0 10 100 0 20 40 60 80 100 Reverse Voltage, (V) Percent of Rated Peak Reverse Voltage, ( %) REV:A QW-BB042 Page 2 Comchip Technology CO., LTD.

Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist Marking Code Part Number Marking Code Packaging SB320ET-G SB320E REEL SB340ET-G SB340E REEL SB345ET-G SB345E REEL SB350ET-G SB350E REEL SB360ET-G SB360E REEL SB380ET-G SB380E REEL SB3100ET-G SB3100E REEL SB320EA-G SB320E AMMO SBXXXE SB340EA-G SB340E AMMO SB345EA-G SB345E AMMO SB350EA-G SB350E AMMO SB360EA-G SB360E AMMO SB380EA-G SB380E AMMO SB3100EA-G SB3100E AMMO SB320EB-G SB320E BULK XXX / XXXX = Product type marking code SB340EB-G SB340E BULK SB345EB-G SB345E BULK SB350EB-G SB350E BULK SB360EB-G SB360E BULK SB380EB-G SB380E BULK SB3100EB-G SB3100E BULK Note: 1) Suffix code after part number to specify packaging item . Packaging Code REEL PACK T AMMO PACK A BULK PACK B Standard Packaging REEL PACK BULK PACK Case Type Case Type REEL Reel Size BOX ( pcs ) (inch) ( pcs ) DO-201AD 1,200 13 DO-201AD 200 AMMO PACK Case Type BOX ( pcs ) DO-201AD 1,200 REV:A QW-BB042 Page 3 Comchip Technology CO., LTD.

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C omchip Technology: SB340E-G SB360E-G SB3100E-G SB380EA-G SB3100EB-G SB320EA-G SB360EA-G SB340EA-G SB320E-G