RClamp2504N & RClamp3304N RailClamp®®®®® 2.5V & 3.3V TVS Arrays ®®®®® PROTECTION PRODUCTS - RailClamp Description Features A RailClamp® is a low capacitance TVS array designed (cid:139) Transient protection for high-speed data lines to to protect high speed data interfaces. This series has IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) been specifically designed to protect sensitive compo- IEC 61000-4-4 (EFT) 40A (5/50ns) nents which are connected to data and transmission IEC 61000-4-5 (Lightning) 25A (8/20μs) lines from overvoltage caused by ESD (electrostatic (cid:139) Array of surge rated diodes with internal TVS Diode discharge), CDE (Cable Discharge Events), and Light- (cid:139) Small package saves board space ning. (cid:139) Protects up to four I/O lines The unique design incorporates surge rated, low (cid:139) Low capacitance (<5pF) for high-speed interfaces capacitance steering diodes and a TVS diode in a (cid:139) Low leakage current and clamping voltage single package. During transient conditions, the (cid:139) Low operating voltage: 2.5V and 3.3V steering diodes direct the transient current to ground. (cid:139) Solid-state silicon-avalanche technology The internal TVS diode clamps the transient voltage to a safe level. The low capacitance array configuration Mechanical Characteristics allows the user to protect up to four high-speed data (cid:139) SLP2626P10 10L package lines. (cid:139) RoHS/WEEE Compliant The RClamp®3304N and RClamp®2504N are con- (cid:139) Nominal Dimensions: 2.6 x 2.6 x 0.60 mm structed using Semtech’s proprietary EPD process technology. The EPD process provides low stand-off (cid:139) Lead Finish: NiPdAu voltages with significant reductions in leakage current (cid:139) Molding compound flammability rating: UL 94V-0 and capacitance over silicon-avalanche diode pro- (cid:139) Marking : Marking Code + Date Code cesses. They feature a true operating voltage of 2.5 (cid:139) Packaging : Tape and Reel volts and 3.3 volts for superior protection. Applications These devices are in a 10-pin, RoHS/WEEE compliant, SLP2626P10 package. It measures 2.6 x 2.6 x (cid:139) USB 2.0 0.60mm. The leads are spaced at a pitch of 0.5mm (cid:139) 10/100/1000 Ethernet and are finished with lead-free NiPdAu. The high surge (cid:139) Digital Visual Interface (DVI) capability (Ipp=25A, tp=8/20μs) means it can be used (cid:139) T1/E1 Secondary Protection in high threat environments in applications such as (cid:139) T3/E3 Secondary Protection Gigabit Ethernet, telecommunication lines, and digital (cid:139) Analog Video video. Circuit Diagram Package Configuration 2.60 CL 1 2 Pin 5 2.60 C L Pin 1 Pin 9 Pin 3 Pin 7 0.50 BSC Gnd 0.60 Revision 04/07/2009 1 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS Absolute Maximum Rating Rating Symbol Value Units PeakPulsePower(tp =8/20μs) P 450 Watts pk PeakPulseCurrent (tp =8/20μs) I 25 A PP ESDperIEC61000-4-2(Air) V 25 kV ESD ESDperIEC61000-4-2(Contact) 15 Operating Temperature T -55to+125 °C J StorageTemperature T -55to+150 °C STG Electrical Characteristics (T=25oC) RClamp2504N Parameter Symbol Conditions Minimum Typical Maximum Units ReverseStand-Off Voltage V 2.5 V RWM Punch-Through Voltage V I =2μA 2.7 V PT PT Snap-Back Voltage V I =50mA 2.0 V SB SB ReverseLeakageCurrent I V =2.5V, T=25°C 0.5 μA R RWM Clamping Voltage V I =1A, t =8/20μs 4.5 V C PP p Clamping Voltage V I =10A, t =8/20μs 7.5 V C PP p Clamping Voltage V I =25A, t =8/20μs 15 V C PP p Junction Capacitance C Between I/Opinsand Ground 3.8 5 pF j V =0V, f =1MHz R Between I/Opins 2.0 pF V =0V, f =1MHz R Note 1: I/O pins are pin 1, 3, 7, and 9 © 2009 Semtech Corp. 2 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS RClamp3304N Parameter Symbol Conditions Minimum Typical Maximum Units ReverseStand-Off Voltage V 3.3 V RWM Punch-Through Voltage V I =5μA 3.5 V PT PT Snap-Back Voltage V I =50mA 2.8 V SB SB ReverseLeakageCurrent I V =3.3V, T=25°C 0.5 μA R RWM Clamping Voltage V I =1A, t =8/20μs 5.5 V C PP p Clamping Voltage V I =10A, t =8/20μs 10.5 V C PP p Clamping Voltage V I =25A, t =8/20μs 18 V C PP p Junction Capacitance C Between I/Opinsand Ground 3.8 5 pF j V =0V, f =1MHz R Between I/Opins 2.0 pF V =0V, f =1MHz R © 2009 Semtech Corp. 3 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 10 110 100 W) 90 er - P (kPP 1 ower or IPP 678000 w P Po ed 50 e at s R 40 k Pul 0.1 % of 30 a e 20 P 10 0 0.01 0 25 50 75 100 125 150 0.1 1 10 100 1000 Pulse Duration - tp (us) Ambient Temperature - TA (oC) Pulse Waveform Normalized Junction Capacitance vs. Reverse Voltage 110 1.5 Waveform 100 1.4 Parameters: 90 tr = 8µs 1.3 1.2 80 td = 20µs 1.1 Percent of IPP 3456700000 e-t td = IPP/2 C(V) / C(V=0)JRJR00000.....156789 0.4 20 0.3 10 0.2 0.1 f = 1 MHz 0 0 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 Time (µs) Reverse Voltage - VR (V) Clamping Voltage vs. Peak Pulse Current Clamping Voltage vs. Peak Pulse Current I/O to GND I/O to I/O 20 25 (V)C15 RClamp3304N (V)C20 RClamp3304N V V e - e - 15 g g a a olt 10 olt V V g g 10 RClamp2504N n n pi pi am 5 RClamp2504N Waveform am Waveform Cl Parameters: Cl 5 Parameters: tr = 8μs tr = 8μs td = 20μs td = 20μs 0 0 0 5 10 15 20 25 0 5 10 15 20 25 Peak Pulse Current - I (A) Peak Pulse Current - I (A) PP PP © 2009 Semtech Corp. 4 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS Typical Characteristics Insertion Loss S21 (I/O to Ground) ESD Clamping (8kV Contact per IEC 61000-4-2) CH1 S21 LOG 6 dB / REF 0 dB 1: -1.0230 dB 800 MHz 2: -1.1051 dB 0 dB 900 MHz -6 dB 1 2 3 4 3: -2.0922 dB 1.8 GHz -12 dB 4: -3.0779 dB 2.5 GHz -18 dB 5: -4.5358 dB -24 dB 2.7 GHz -30 dB -36 dB -42 dB -48 dB 1 10 100 1 3 MHz MHz MHz GHz GHz START . MHz STOP 3 000. 0000 00 MHz Note: Data is taken with a 10x attenuator © 2009 Semtech Corp. 5 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS Applications Information Circuit Diagram Device Connection Options for Protection of Four High-Speed Data Lines Pin 5 These devices are designed to protect low voltage data lines operating at 2.5 volts or 3.3 volts. When the voltage on the protected line exceeds the reference voltage the steering diodes are forward biased, Pin 1 Pin 9 Pin 3 Pin 7 conducting the transient current away from the sensitive circuitry. Data lines are connected at pins 1, 3, 7 and 9. The center pin should be connected directly to a ground Gnd plane. The path length is kept as short as possible to minimize parasitic inductance. Pins 2, 4, 6, 8, and 10 are not connected. Note that pin 5 is connected internally to the cathode FFFFFiiiiiggggguuuuurrrrreeeee 11111..... PPPPPiiiiinnnnn CCCCCooooonnnnnfffffiiiiiggggguuuuurrrrraaaaatttttiiiiiooooonnnnn (((((TTTTToooooppppp SSSSSiiiiidddddeeeee VVVVViiiiieeeeewwwww))))) of the low voltage TVS. It is not recommended that these pins be directly connected to a DC source greater than the snap-back voltage (V ) as the device SB can latch on as described below. 1 10 2 9 EPD TVS Characteristics 3 GND 8 These devices are constructed using Semtech’s 4 7 proprietary EPD technology. By utilizing the EPD tech- nology, the RClamp2504N and RClamp3304N can 5 6 effectively operate at 2.5V and 3.3V respectively while maintaining excellent electrical characteristics. Pin Identification The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in tradi- 1,3,7,9 Input/Output Lines tional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a 2,4,6,8,10 NoConnect slightly different IV characteristic curve when compared to conventional devices. During normal operation, the NoConnect 5 (Donot connect thispin toaDCsupply) device represents a high-impedance to the circuit up to the device working voltage (V ). During an ESD RWM CenterTab Ground event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (V ) is exceeded. Unlike a conventional device, the low PT voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteris- defined on the curve by the snap-back voltage (V ) SB tic aids in lowering the clamping voltage of the device, and snap-back current (I ). To return to a non- SB but must be considered in applications where DC conducting state, the current through the device must voltages are present. fall below the I (approximately <50mA) and the SB voltage must fall below the V (normally 2.8 volts for a SB When the TVS is conducting current, it will exhibit a 3.3V device). If a 3.3V TVS is connected to 3.3V DC slight “snap-back” or negative resistance source, it will never fall below the snap-back voltage of characteristics due to its structure. This point is 2.8V and will therefore stay in a conducting state. © 2009 Semtech Corp. 6 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS Applications Information RRRCCClllaaammmppp222555000444NNN 111 222 RRRCCClllaaammmppp222555000444NNN Gigabit Ethernet 111 222 Transceiver RRRCCClllaaammmppp222555000444NNN 111 222 RRRCCClllaaammmppp222555000444NNN 111 222 Schematic Diagram for Gigabit Ethernet Telcordia GR-1089 Intra-Building Protection (PHY Operating Temp <= 90°C) 1 10 2 9 3 8 4 7 5 6 RClamp2504N 1 10 2 9 3 8 4 7 5 6 RClamp2504N Schematic Diagram for Gigabit Ethernet ESD Protection © 2009 Semtech Corp. 7 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS Applications Information - Spice Model RClamp2504N Spice Model RClamp2504NSpice Parameters Parameter Unit D1(LCRD) D2(LCRD) D3(TVS) IS Amp 1E-20 1E-20 1.66E-13 BV Volt 100 100 2.89 VJ Volt 0.63 0.59 0.53 RS Ohm 0.138 0.241 0.06 IBV Amp 1E-3 1E-3 1E-3 CJO Farad 1.5E-12 1.5E-12 288E-12 TT sec 2.541E-9 2.541E-9 2.541E-9 M -- 0.01 0.01 0.17 N -- 1.1 1.1 1.1 EG eV 1.11 1.11 1.11 © 2009 Semtech Corp. 8 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS Applications Information - Spice Model RClamp3304N Spice Model RClamp3304NSpice Parameters Parameter Unit D1(LCRD) D2(LCRD) D3(TVS) IS Amp 1E-20 1E-20 1.66E-13 BV Volt 100 100 3.55 VJ Volt 0.62 0.59 0.6 RS Ohm 0.138 0.241 0.182 IBV Amp 1E-3 1E-3 1E-3 CJO Farad 1.5E-12 1.5E-12 253E-12 TT sec 2.541E-9 2.541E-9 2.541E-9 M -- 0.01 0.01 0.205 N -- 1.1 1.1 1.1 EG eV 1.11 1.11 1.11 © 2009 Semtech Corp. 9 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS Outline Drawing - SLP2626P10 A D B DIMENSIONS INCHES MILLIMETERS DIM MINNOMMAX MINNOMMAX A .020 .024 .026 0.50 0.60 0.65 PIN 1 A1 .000 .001 .002 0.00 0.03 0.05 (LASINEDRIC MAATROKR) E Ab2 .007(..000170).012 0.20(00..2157)0.30 D .098 .102 .106 2.50 2.60 2.70 D1 .079 .085 .089 2.00 2.15 2.25 E .098 .102 .106 2.50 2.60 2.70 E1 .044 .050 .054 1.11 1.26 1.36 e .020 BSC 0.50 BSC L .011 .014 .016 0.30 0.35 0.40 A SEATING N 10 10 aaa C PLANE aaa .003 0.08 bbb .004 0.10 A2 D1 A1 C 1 2 CL E/2 CL E1 LxN N e bxN D/2 bbb C A B NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. Land Pattern - SLP2626P10 P X DIMENSIONS DIM INCHES MILLIMETERS B .081 2.05 C .100 2.50 Z F (C) F .050 1.26 G G .073 1.85 P .020 0.50 X .012 0.30 Y .025 0.65 Z .124 3.15 Y B NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. © 2009 Semtech Corp. 10 www.semtech.com

RClamp2504N & RClamp3304N PROTECTION PRODUCTS Marking Ordering Information Working Qtyper 2504N 3304N Part Number ReelSize Voltage Reel YYWW YYWW RClamp2504N.TCT 2.5Volts 3,000 7Inch RClamp3304N.TCT 3.3Volts 3,000 7Inch RClamp2504N RClamp3304N RailClamp and RClamp are marks of Semtech Corporation YYWW = Date Code Tape and Reel Specification Pin 1 Location User Direction of feed Device Orientation in Tape A0 B0 K0 2.77+/-0.10mm 2.77+/-0.10mm 0.80+/-0.10mm Tape K B,(Max) D D1 E F P P0 P2 T(MAX) W Width (MAX) 8.0mm 1.0mm 1.750±.10 4.2mm 1.5+0.1mm 3.5±0.05 4.0±0.1 4.0±0.1 2.0±0.05 +0.3mm 8mm ±0.05 mm 2.4mm 0.4mm (.165) -0.0mm mm mm mm mm -0.1mm Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2009 Semtech Corp. 11 www.semtech.com