Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PESDxS4UD series Quadruple ESD protection diode arrays in a SOT457 package Rev. 02 — 21 August 2009 Product data sheet 1. Product profile 1.1 General description Quadruple ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package designed to protect up to 4signal lines from the damage caused by ESD and other transients. 1.2 Features n ESD protection of up to 4lines n ESD protection up to 30kV n Max. peak pulse power: P =200W n IEC61000-4-2; level4 (ESD) PP n Ultra low leakage current: I =50pA n IEC61000-4-5; (surge); I up to 20A RM PP n Low clamping voltage: V =12V at CL I =20A PP 1.3 Applications n Computers and peripherals n Communication systems n Audio and video equipment n Portable electronics n Cellular handsets and accessories n Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM PESD3V3S4UD - - 3.3 V PESD5V0S4UD - - 5 V PESD12VS4UD - - 12 V PESD15VS4UD - - 15 V PESD24VS4UD - - 24 V

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit C diode capacitance f=1MHz; V =0V d R PESD3V3S4UD - 215 300 pF PESD5V0S4UD - 165 220 pF PESD12VS4UD - 73 100 pF PESD15VS4UD - 60 90 pF PESD24VS4UD - 45 70 pF 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 cathode1 6 5 4 2 common anode 1 6 3 cathode2 2 5 4 cathode3 1 2 3 3 4 5 common anode 006aaa156 6 cathode4 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3S4UD SC-74 plastic surface-mounted package (TSOP6); SOT457 6leads PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD 4. Marking Table 4. Marking codes Type number Marking code PESD3V3S4UD K4 PESD5V0S4UD K5 PESD12VS4UD K6 PESD15VS4UD K7 PESD24VS4UD K8 PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 2 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit P peak pulse power t =8/20m s [1][2] - 200 W PP p I peak pulse current t =8/20m s [1][2] PP p PESD3V3S4UD - 20 A PESD5V0S4UD - 20 A PESD12VS4UD - 10 A PESD15VS4UD - 6 A PESD24VS4UD - 4 A T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Non-repetitive current pulse 8/20m s exponential decay waveform according to IEC61000-4-5. [2] Measured from pin 1, 3, 4or 6to2 or5 Table 6. ESD maximum ratings Symbol Parameter Conditions Min Max Unit V electrostatic discharge voltage IEC61000-4-2 [1][2] ESD (contact discharge) PESD3V3S4UD - 30 kV PESD5V0S4UD - 30 kV PESD12VS4UD - 30 kV PESD15VS4UD - 30 kV PESD24VS4UD - 23 kV PESDxS4UD series HBM MIL-STD-883 - 10 kV [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4or 6to2 or5 Table 7. ESD standards compliance Standard Conditions IEC61000-4-2; level4 (ESD) >15kV (air); >8kV (contact) HBM MIL-STD-883; class3 >10kV PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 3 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 001aaa631 001aaa630 IPP 120 100 % IPP 100 % IPP; 8 m s 90 % (%) 80 e- t 50 % IPP; 20 m s 40 10 % tr = 0.7 ns to 1 ns t 0 0 10 20 30 40 30 ns t (m s) 60 ns Fig 1. 8/20m s pulse waveform according to Fig 2. ESD pulse waveform according to IEC61000-4-5 IEC61000-4-2 6. Characteristics Table 8. Characteristics T =25(cid:176) C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM PESD3V3S4UD - - 3.3 V PESD5V0S4UD - - 5 V PESD12VS4UD - - 12 V PESD15VS4UD - - 15 V PESD24VS4UD - - 24 V I reverse leakage current RM PESD3V3S4UD V =3.3V - 300 800 nA RWM PESD5V0S4UD V =5V - 80 200 nA RWM PESD12VS4UD V =12V - 0.05 15 nA RWM PESD15VS4UD V =15V - 0.05 15 nA RWM PESD24VS4UD V =24V - 0.05 15 nA RWM V breakdown voltage I =1mA BR R PESD3V3S4UD 5.3 5.6 5.9 V PESD5V0S4UD 6.4 6.8 7.2 V PESD12VS4UD 12.5 14.5 16 V PESD15VS4UD 15.5 18 20.5 V PESD24VS4UD 25.5 27 29 V PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 4 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package Table 8. Characteristics …continued T =25(cid:176) C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit C diode capacitance f=1MHz; V =0V d R PESD3V3S4UD - 215 300 pF PESD5V0S4UD - 165 220 pF PESD12VS4UD - 73 100 pF PESD15VS4UD - 60 90 pF PESD24VS4UD - 45 70 pF V clamping voltage [1][2] CL PESD3V3S4UD I =1A - - 8 V PP I =20A - - 12 V PP PESD5V0S4UD I =1A - - 8 V PP I =20A - - 13 V PP PESD12VS4UD I =1A - - 17 V PP I =10A - - 24 V PP PESD15VS4UD I =1A - - 22 V PP I =6A - - 33 V PP PESD24VS4UD I =1A - - 33 V PP I =4A - - 52 V PP r differential resistance I =5mA - - 25 W dif R [1] Non-repetitive current pulse 8/20m s exponential decay waveform according to IEC61000-4-5. [2] Measured from pin 1, 3, 4or 6to2 or5 104 006aaa698 1.2 001aaa633 P(WPP) PPP PPP(25(cid:176)C) 103 0.8 102 0.4 10 1 0 1 10 102 103 104 0 50 100 150 200 tp (m s) Tj ((cid:176)C) T =25(cid:176) C amb Fig 3. Peakpulsepowerasafunctionofexponential Fig 4. Relative variation of peak pulse power as a pulse duration; typical values function of junction temperature; typical values PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 5 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 006aaa700 006aaa701 220 80 Cd Cd (pF) (pF) 180 60 140 40 (1) (1) (2) (2) 100 20 (3) 60 0 0 1 2 3 4 5 0 5 10 15 20 25 VR (V) VR (V) f=1MHz; T =25(cid:176) C f=1MHz; T =25(cid:176) C amb amb (1) PESD3V3S4UD (1) PESD12VS4UD (2) PESD5V0S4UD (2) PESD15VS4UD (3) PESD24VS4UD Fig 5. Diode capacitance as a function of reverse Fig 6. Diode capacitance as a function of reverse voltage; typical values voltage; typical values I 006aaa699 10 IRM IRM(25(cid:176)C) - VCL- VBR - VRWM V 1 - IRM - IR - + P-N 10- 1 - IPP - 100 - 50 0 50 100 150 Tj ((cid:176)C) 006aaa407 PESD3V3S4UD PESD5V0S4UD I is less than 5nA at 150(cid:176) C R PESD12VS4UD PESD15VS4UD PESD24VS4UD Fig 7. Relative variation of reverse leakage current Fig 8. V-I characteristics for a unidirectional ESD as a function of junction temperature; typical protection diode values PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 6 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package ESD TESTER 4 GHz DIGITAL RG 223/U OSCILLOSCOPE Rd 450 W 50 W coax 10· ATTENUATOR Cs 50 W DUT (DEVICE IEC 61000-4-2 network UNDER Cs = 150 pF; Rd = 330 W TEST) vertical scale = 200 V/div vertical scale = 20 V/div horizontal scale = 50 ns/div horizontal scale = 50 ns/div PESD24VS4UD GND PESD15VS4UD GND PESD12VS4UD GND PESD5V0S4UD GND GND PESD3V3S4UD GND unclamped +1 kV ESD voltage waveform clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div vertical scale = 10 V/div horizontal scale = 50 ns/div horizontal scale = 50 ns/div unclamped - 1 kV ESD voltage waveform clamped - 1 kV ESD voltage waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) 006aaa761 Fig 9. ESD clamping test setup and waveforms PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 7 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 7. Application information ThePESDxS4UDseriesisdesignedforprotectionofupto4unidirectionaldatalinesfrom the damage caused by ESD and surge pulses. The PESDxS4UD series may be used on lines where the signal polarities are above or below ground. The PESDxS4UD series provides a surge capability of 200W per line for an 8/20m s waveform. data- or transmission lines 1 6 1 6 2 5 2 5 n.c. n.c. 3 4 3 4 unidirectional protection of 4 lines bidirectional protection of 3 lines 006aaa762 Fig 10. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxS4UD as close to the input terminal or connector as possible. 2. The path length between the PESDxS4UD and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 8 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 8. Package outline 3.1 1.1 2.7 0.9 6 5 4 0.6 0.2 3.0 1.7 2.5 1.3 pin 1 index 1 2 3 0.40 0.26 0.95 0.25 0.10 1.9 Dimensions in mm 04-11-08 Fig 11. Package outline SOT457 (SC-74) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PESD3V3S4UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 PESD5V0S4UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 PESD12VS4UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 PESD15VS4UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 PESD24VS4UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, seeSection12. [2] T1: normal taping [3] T2: reverse taping PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 9 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXS4UD_SER_2 20090821 Product data sheet - PESDXS4UD_SER_1 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. PESDXS4UD_SER_1 20060704 Product data sheet - - PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 10 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 11.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 11.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Export control —This document as well as the item(s) described herein changes to information published in this document, including without may be subject to export control regulations. Export might require a prior limitation specifications and product descriptions, at any time and without authorization from national authorities. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Suitability for use —NXP Semiconductors products are not designed, document, and as such is not complete, exhaustive or legally binding. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 11.4 Trademarks to result in personal injury, death or severe property or environmental Notice:Allreferencedbrands,productnames,servicenamesandtrademarks are the property of their respective owners. 12. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PESDXS4UD_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 August 2009 11 of 12

PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Application information. . . . . . . . . . . . . . . . . . . 8 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Contact information. . . . . . . . . . . . . . . . . . . . . 11 13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 August 2009 Document identifier: PESDXS4UD_SER_2