Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: • High photo sensitivity • Fast response time • 0805 package size OP500,DA • Phototransistor or Photo Darlington Output • Choice of opaque or water clear flat lens Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA has an opaque lens that shields the device from stray light, whereas OP500 and OP500DA has a water clear lens. All devices have a wide viewing acceptance angle and higher collector current than devices without lenses especially on the OP500DA and OP501 which incorporate photo darlington die instead on the standard transistor. OP500, OP501, OP500DA and OP501DA are mechanically and spectrally matched to the OP200 series infrared LEDs. Applications: Ordering Information • Non-contact position sensing Part Number Sensor Viewing Angle Lead Length OP500 • Datum detection Phototransistor 150° OP501 • Machine automation OP500DA N/A Photo Darlington 150° • Optical encoders OP501DA OP500, OP501, OP500DA, OP501DA OP500 OP500DA OP501 OP501DA 1 1 SENSOR DICE 2 2 COLLECTOR Pin # Transistor 1 Collector 2 Emitter Recommended Solder Pad Patterns 2a RoHS Moisture OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.4 02/09 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Page 1 of 5

S ilicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Absolute Maximum Ratings (T =25°C unless otherwise noted) A Storage Temperature Range -40o C to +100o C Operating Temperature Range -25o C to +85o C Lead Soldering Temperature(1) 260° C Collector-Emitter Voltage OP500, OP501 30 V OP500DA, OP501DA 35 V Emitter-Collector Voltage 5 V Collector Current OP500, OP501 20 mA OP500DA, OP501DA 32 mA Power Dissipation(2) OP500, OP501 75 mW OP500DA, OP501DA 100 mW Electrical Characteristics (T = 25°C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode On-State Collector Current I OP500, OP501 0.1 - - V = 5.0 V, E = 0.15 mW/cm2 (3) C(ON) mA CE E OP500DA, OP501DA 10.0 - - V = 5.0 V, E = 0.15 mW/cm2 (3) CE E Collector-Emitter Saturation Voltage V OP500, OP501 - - 0.3 I = 100 µA, E = 1.0 mW/cm2 (3) CE(SAT) V C E OP500DA, OP501DA - - 1.0 I = 1 mA, E = 0.15 mW/cm2 (3) C E I Collector-Emitter Dark Current - - 100 nA V = 5.0 V (4) CEO CC Collector-Emitter Breakdown Voltage 30 V OP500, OP501 - - V I = 100 µA, E = 0 BR(CEO) 35 C E OP500DA, OP501DA Emitter-Collector Breakdown Voltage V OP500, OP501 5 - - I = 100 µA, E = 0 BR(ECO) V E E OP500DA, OP501DA 5 - - I = 100 µA, E = 0 C E Rise and Fall Times OP500, OP501 15 - I = 1 mA, R = 1KΩ t t - µs C L r, f OP500DA, OP501DA 50 60 I = 1 mA, R = 1KΩ C L Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.17 mW/° C above 25° C. 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µA, use the formulate I = 10(0.04 t - ¾), where T is the ambient temperature in ° C. CEO A OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.4 02/09 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 5 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

S ilicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Relative Response vs. Wavelength 100% 80% e s n o 60% p s e R ative 40% OOPP550000,D A OOPP550011,D A el R 20% 0% 400 500 600 700 800 900 1000 1100 Wavelength (nm) OP500, OP501 Relative On-State Collector Current – Collector-Emitter Dark Current Ic (mA) vs. Temperature-T A vs. Collector-Emitter Voltage—V (V) CE 1000 2.00 Conditions: Ee = 0 mW/cm2 nA) VCE = 10V mA) 1.80 3 mW/cm2 ent ( 100 ent ( 1.60 2.5 mW/cm2 urr urr 1.40 C C Dark 10 ector 11..0200 2 mW/cm2 er oll 1.5 mW/cm2 mitt e C 0.80 E at or- St 0.60 1.0 mW/cm2 ct 1 n- e O 0.40 Coll - ON) 0.20 0.5 mW/cm2 C( 0 I -25 0 25 50 75 100 0 1 2 3 4 5 Temperature—(°C) Collector-Emitter Voltage (V) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.4 02/09 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Page 3 of 5

S ilicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP500, OP501 Relative On-State Collector Current Relative On-State Collector Current-IC (mA) vs. Irradiance—Ee (mW/cm2) vs. Temperature-T A 160% 140% Normalized at Ee = 5mW/cm2 Normalized at TA = 25°C . Conditions: VCE = 5V, Conditions: VCE = 5V, 140% λ = 935nm, TA = 25 °C 130% λ = 935nm, TA = 25 °C nt urre 120% ent 120% or C 100% Curr 110% ct or olle 80% ect 100% e C Coll ativ 60% ve 90% Rel 40% elati 80% R 20% 70% 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -25 0 25 50 75 100 Ee—Irradiance (mW/cm2) Temperature—(°C) OP500DA, OP501DA Relative On-State Collector Current – Collector-Emitter Dark Current Ic (mA) vs. Temperature-TA vs. Collector-Emitter Voltage—VCE (V) 30 1000 Conditions: Ee = 0 mW/cm2 1.2 mW/cm2 A) VCE = 10V mA) 25 n ( 1.0 mW/cm2 ent ( 100 rent 20 urr Cur 0.8 mW/cm2 k C or 17.5 ar ct er D 10 Colle 15.0 0.6 mW/cm2 ctor-Emitt 1 On-State 12.5 0.4 mW/cm2 Colle - ON) 10.0 0.2 mW/cm2 C( I 0 -25 0 25 50 75 100 0 0.5 1.0 1.5 2.5 3 Temperature—(°C) Collector-Emitter Voltage (V) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.4 02/09 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Page 4 of 5 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP500DA, OP501DA Relative On-State Collector Current Relative On-State Collector Current-IC (mA) vs. Irradiance—Ee (mW/cm2) vs. Temperature-T A 140% Normalized at Ee = 1mW/cm2 Conditions: VCE = 5V, Normalized at TA = 25°C . % 160% λ = 935nm, TA = 25 °C 130% Conditions: VCE = 5V, — % nt 140% — 120% urre ent or C 120% Curr 110% ollect 100% ector 100% e C 80% Coll 90% ativ ve Rel 60% elati 80% R 40% 70% 0 0.50 1.0 1.5 2.0 -25 0 25 50 75 100 Irradiance- Ee(mW/cm2) Temperature—(°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.4 02/09 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Page 5 of 5