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  • 型号: MK10DX64VLF5
  • 制造商: Freescale Semiconductor
  • 库位|库存: xxxx|xxxx
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ICGOO电子元器件商城为您提供MK10DX64VLF5由Freescale Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MK10DX64VLF5价格参考。Freescale SemiconductorMK10DX64VLF5封装/规格:嵌入式 - 微控制器, ARM® Cortex®-M4 微控制器 IC Kinetis K10 32-位 50MHz 64KB(64K x 8) 闪存 48-LQFP(7x7)。您可以下载MK10DX64VLF5参考资料、Datasheet数据手册功能说明书,资料中有MK10DX64VLF5 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC MCU ARM 64KB FLASH 48LQFPARM微控制器 - MCU Kinetis 64K Flex

EEPROM容量

2K x 8

产品分类

嵌入式 - 微控制器

I/O数

33

品牌

Freescale Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

嵌入式处理器和控制器,微控制器 - MCU,ARM微控制器 - MCU,Freescale Semiconductor MK10DX64VLF5Kinetis K10

数据手册

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产品型号

MK10DX64VLF5

PCN设计/规格

http://cache.freescale.com/files/shared/doc/pcn/PCN15823.htmhttp://cache.freescale.com/files/shared/doc/pcn/PCN16028.htm

RAM容量

16K x 8

产品种类

ARM微控制器 - MCU

供应商器件封装

48-LQFP(7x7)

包装

托盘

单位重量

178.250 mg

商标

Freescale Semiconductor

商标名

Kinetis

处理器系列

Kinetis K

外设

DMA, I²S, LVD, POR, PWM, WDT

安装风格

SMD/SMT

封装

Tray

封装/外壳

48-LQFP

封装/箱体

LQFP-48

工作温度

-40°C ~ 105°C

工作电源电压

1.71 V to 3.6 V

工厂包装数量

250

振荡器类型

内部

数据RAM大小

16 kB

数据总线宽度

32 bit

数据转换器

A/D 16x16b

最大工作温度

+ 105 C

最大时钟频率

50 MHz

最小工作温度

- 40 C

标准包装

250

核心

ARM Cortex M4

核心处理器

ARM® Cortex®-M4

核心尺寸

32-位

片上ADC

Yes

电压-电源(Vcc/Vdd)

1.71 V ~ 3.6 V

程序存储器大小

64 kB

程序存储器类型

闪存

程序存储容量

64KB(64K x 8)

系列

K10_50

连接性

I²C, IrDA, SPI, UART/USART

速度

50MHz

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PDF Datasheet 数据手册内容提取

Freescale Semiconductor Document Number: K10P100M72SF1 Data Sheet: Technical Data Rev. 3, 11/2012 K10P100M72SF1 K10 Sub-Family Supports: MK10DX128VLL7, MK10DX256VLL7, MK10DX64VMC7, MK10DX128VMC7, MK10DX256VMC7 Features • Analog modules • Operating Characteristics – Two 16-bit SAR ADCs – Voltage range: 1.71 to 3.6 V – Programmable gain amplifier (PGA) (up to x64) – Flash write voltage range: 1.71 to 3.6 V integrated into each ADC – Temperature range (ambient): -40 to 105°C – 12-bit DAC – Three analog comparators (CMP) containing a 6-bit • Clocks DAC and programmable reference input – 3 to 32 MHz crystal oscillator – Voltage reference – 32 kHz crystal oscillator – Multi-purpose clock generator • Timers – Programmable delay block • System peripherals – Eight-channel motor control/general purpose/PWM – Multiple low-power modes to provide power timer optimization based on application requirements – Two 2-channel quadrature decoder/general purpose – 16-channel DMA controller, supporting up to 63 timers request sources – Periodic interrupt timers – External watchdog monitor – 16-bit low-power timer – Software watchdog – Carrier modulator transmitter – Low-leakage wakeup unit – Real-time clock • Security and integrity modules • Communication interfaces – Hardware CRC module to support fast cyclic – Controller Area Network (CAN) module redundancy checks – Two SPI modules – 128-bit unique identification (ID) number per chip – Two I2C modules – Five UART modules • Human-machine interface – I2S module – Low-power hardware touch sensor interface (TSI) – General-purpose input/output Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. © 2012 Freescale Semiconductor, Inc.

Table of Contents 1 Ordering parts...........................................................................3 5.4.2 Thermal attributes.................................................21 1.1 Determining valid orderable parts......................................3 6 Peripheral operating requirements and behaviors....................22 2 Part identification......................................................................3 6.1 Core modules....................................................................22 2.1 Description.........................................................................3 6.1.1 Debug trace timing specifications.........................22 2.2 Format...............................................................................3 6.1.2 JTAG electricals....................................................22 2.3 Fields.................................................................................3 6.2 System modules................................................................25 2.4 Example............................................................................4 6.3 Clock modules...................................................................25 3 Terminology and guidelines......................................................4 6.3.1 MCG specifications...............................................25 3.1 Definition: Operating requirement......................................4 6.3.2 Oscillator electrical specifications.........................27 3.2 Definition: Operating behavior...........................................5 6.3.3 32 kHz Oscillator Electrical Characteristics...........30 3.3 Definition: Attribute............................................................5 6.4 Memories and memory interfaces.....................................30 3.4 Definition: Rating...............................................................6 6.4.1 Flash electrical specifications................................30 3.5 Result of exceeding a rating..............................................6 6.4.2 EzPort Switching Specifications............................35 3.6 Relationship between ratings and operating 6.4.3 Flexbus Switching Specifications..........................36 requirements......................................................................6 6.5 Security and integrity modules..........................................39 3.7 Guidelines for ratings and operating requirements............7 6.6 Analog...............................................................................39 3.8 Definition: Typical value.....................................................7 6.6.1 ADC electrical specifications.................................39 3.9 Typical value conditions....................................................8 6.6.2 CMP and 6-bit DAC electrical specifications.........47 4 Ratings......................................................................................9 6.6.3 12-bit DAC electrical characteristics.....................49 4.1 Thermal handling ratings...................................................9 6.6.4 Voltage reference electrical specifications............52 4.2 Moisture handling ratings..................................................9 6.7 Timers................................................................................53 4.3 ESD handling ratings.........................................................9 6.8 Communication interfaces.................................................53 4.4 Voltage and current operating ratings...............................9 6.8.1 CAN switching specifications................................53 5 General.....................................................................................10 6.8.2 DSPI switching specifications (limited voltage 5.1 AC electrical characteristics..............................................10 range)....................................................................54 5.2 Nonswitching electrical specifications...............................10 6.8.3 DSPI switching specifications (full voltage range).55 5.2.1 Voltage and current operating requirements.........10 6.8.4 I2C switching specifications..................................57 5.2.2 LVD and POR operating requirements.................11 6.8.5 UART switching specifications..............................57 5.2.3 Voltage and current operating behaviors..............12 6.8.6 I2S/SAI Switching Specifications..........................57 5.2.4 Power mode transition operating behaviors..........13 6.9 Human-machine interfaces (HMI)......................................61 5.2.5 Power consumption operating behaviors..............14 6.9.1 TSI electrical specifications...................................61 5.2.6 Designing with radiated emissions in mind...........18 7 Dimensions...............................................................................62 5.2.7 Capacitance attributes..........................................18 7.1 Obtaining package dimensions.........................................62 5.3 Switching specifications.....................................................19 8 Pinout........................................................................................63 5.3.1 Device clock specifications...................................19 8.1 K10 Signal Multiplexing and Pin Assignments..................63 5.3.2 General switching specifications...........................19 8.2 K10 Pinouts.......................................................................68 5.4 Thermal specifications.......................................................20 9 Revision History........................................................................70 5.4.1 Thermal operating requirements...........................20 K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 2 Freescale Semiconductor, Inc.

Ordering parts 1 Ordering parts 1.1 Determining valid orderable parts Valid orderable part numbers are provided on the web. To determine the orderable part numbers for this device, go to www.freescale.com and perform a part number search for the following device numbers: PK10 and MK10 . 2 Part identification 2.1 Description Part numbers for the chip have fields that identify the specific part. You can use the values of these fields to determine the specific part you have received. 2.2 Format Part numbers for this device have the following format: Q K## A M FFF R T PP CC N 2.3 Fields This table lists the possible values for each field in the part number (not all combinations are valid): Field Description Values Q Qualification status • M = Fully qualified, general market flow • P = Prequalification K## Kinetis family • K10 A Key attribute • D = Cortex-M4 w/ DSP • F = Cortex-M4 w/ DSP and FPU M Flash memory type • N = Program flash only • X = Program flash and FlexMemory Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 3

Terminology and guidelines Field Description Values FFF Program flash memory size • 32 = 32 KB • 64 = 64 KB • 128 = 128 KB • 256 = 256 KB • 512 = 512 KB • 1M0 = 1 MB R Silicon revision • Z = Initial • (Blank) = Main • A = Revision after main T Temperature range (°C) • V = –40 to 105 • C = –40 to 85 PP Package identifier • FM = 32 QFN (5 mm x 5 mm) • FT = 48 QFN (7 mm x 7 mm) • LF = 48 LQFP (7 mm x 7 mm) • LH = 64 LQFP (10 mm x 10 mm) • MP = 64 MAPBGA (5 mm x 5 mm) • LK = 80 LQFP (12 mm x 12 mm) • LL = 100 LQFP (14 mm x 14 mm) • MC = 121 MAPBGA (8 mm x 8 mm) • LQ = 144 LQFP (20 mm x 20 mm) • MD = 144 MAPBGA (13 mm x 13 mm) • MJ = 256 MAPBGA (17 mm x 17 mm) CC Maximum CPU frequency (MHz) • 5 = 50 MHz • 7 = 72 MHz • 10 = 100 MHz • 12 = 120 MHz • 15 = 150 MHz N Packaging type • R = Tape and reel • (Blank) = Trays 2.4 Example This is an example part number: MK10DN512ZVMD10 3 Terminology and guidelines 3.1 Definition: Operating requirement An operating requirement is a specified value or range of values for a technical characteristic that you must guarantee during operation to avoid incorrect operation and possibly decreasing the useful life of the chip. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 4 Freescale Semiconductor, Inc.

Terminology and guidelines 3.1.1 Example This is an example of an operating requirement, which you must meet for the accompanying operating behaviors to be guaranteed: Symbol Description Min. Max. Unit V 1.0 V core supply 0.9 1.1 V DD voltage 3.2 Definition: Operating behavior An operating behavior is a specified value or range of values for a technical characteristic that are guaranteed during operation if you meet the operating requirements and any other specified conditions. 3.2.1 Example This is an example of an operating behavior, which is guaranteed if you meet the accompanying operating requirements: Symbol Description Min. Max. Unit I Digital I/O weak pullup/ 10 130 µA WP pulldown current 3.3 Definition: Attribute An attribute is a specified value or range of values for a technical characteristic that are guaranteed, regardless of whether you meet the operating requirements. 3.3.1 Example This is an example of an attribute: Symbol Description Min. Max. Unit CIN_D Input capacitance: — 7 pF digital pins K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 5

Terminology and guidelines 3.4 Definition: Rating A rating is a minimum or maximum value of a technical characteristic that, if exceeded, may cause permanent chip failure: • Operating ratings apply during operation of the chip. • Handling ratings apply when the chip is not powered. 3.4.1 Example This is an example of an operating rating: Symbol Description Min. Max. Unit V 1.0 V core supply –0.3 1.2 V DD voltage 3.5 Result of exceeding a rating 40 m) 30 p p e ( s in tim 20 Tsohoen l ikaesl iah ocohda roafc pteerrimstiacn beengt icnhsi pto f aeixlucreee idn corneea soef sit sra oppidelrya atins g ratings. e ur Fail 10 0 Operating rating Measured characteristic K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 6 Freescale Semiconductor, Inc.

Terminology and guidelines 3.6 Relationship between ratings and operating requirements O perating rating (min.) O perating require m ent (min.) O perating require m ent (m ax.) O perating rating (m ax.) Fatal range Degraded operating range Normal operating range Degraded operating range Fatal range Expected permanent failure - No permanent failure - No permanent failure - No permanent failure Expected permanent failure - Possible decreased life - Correct operation - Possible decreased life - Possible incorrect operation - Possible incorrect operation –∞ ∞ Operating (power on) H andling rating (min.) H andling rating (m ax.) Fatal range Handling range Fatal range Expected permanent failure No permanent failure Expected permanent failure –∞ ∞ Handling (power off) 3.7 Guidelines for ratings and operating requirements Follow these guidelines for ratings and operating requirements: • Never exceed any of the chip’s ratings. • During normal operation, don’t exceed any of the chip’s operating requirements. • If you must exceed an operating requirement at times other than during normal operation (for example, during power sequencing), limit the duration as much as possible. 3.8 Definition: Typical value A typical value is a specified value for a technical characteristic that: • Lies within the range of values specified by the operating behavior • Given the typical manufacturing process, is representative of that characteristic during operation when you meet the typical-value conditions or other specified conditions Typical values are provided as design guidelines and are neither tested nor guaranteed. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 7

Terminology and guidelines 3.8.1 Example 1 This is an example of an operating behavior that includes a typical value: Symbol Description Min. Typ. Max. Unit I Digital I/O weak 10 70 130 µA WP pullup/pulldown current 3.8.2 Example 2 This is an example of a chart that shows typical values for various voltage and temperature conditions: 5000 4500 4000 T 3500 J 150 °C A) 3000 μ ( 105 °C P O 2500 T S 25 °C _ D ID 2000 –40 °C 1500 1000 500 0 0.90 0.95 1.00 1.05 1.10 V (V) DD 3.9 Typical value conditions Typical values assume you meet the following conditions (or other conditions as specified): Symbol Description Value Unit T Ambient temperature 25 °C A V 3.3 V supply voltage 3.3 V DD K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 8 Freescale Semiconductor, Inc.

Ratings 4 Ratings 4.1 Thermal handling ratings Symbol Description Min. Max. Unit Notes T Storage temperature –55 150 °C 1 STG T Solder temperature, lead-free — 260 °C 2 SDR 1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life. 2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices. 4.2 Moisture handling ratings Symbol Description Min. Max. Unit Notes MSL Moisture sensitivity level — 3 — 1 1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices. 4.3 ESD handling ratings Symbol Description Min. Max. Unit Notes V Electrostatic discharge voltage, human body model -2000 +2000 V 1 HBM V Electrostatic discharge voltage, charged-device model -500 +500 V 2 CDM I Latch-up current at ambient temperature of 105°C -100 +100 mA LAT 1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM). 2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components. 4.4 Voltage and current operating ratings Symbol Description Min. Max. Unit V Digital supply voltage –0.3 3.8 V DD Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 9

General Symbol Description Min. Max. Unit I Digital supply current — 185 mA DD V Digital input voltage (except RESET, EXTAL, and XTAL) –0.3 5.5 V DIO V Analog1, RESET, EXTAL, and XTAL input voltage –0.3 V + 0.3 V AIO DD I Maximum current single pin limit (applies to all digital pins) –25 25 mA D V Analog supply voltage V – 0.3 V + 0.3 V DDA DD DD V RTC battery supply voltage –0.3 3.8 V BAT 1. Analog pins are defined as pins that do not have an associated general purpose I/O port function. 5 General 5.1 AC electrical characteristics Unless otherwise specified, propagation delays are measured from the 50% to the 50% point, and rise and fall times are measured at the 20% and 80% points, as shown in the following figure. Figure 1. Input signal measurement reference All digital I/O switching characteristics assume: 1. output pins • have C =30pF loads, L • are configured for fast slew rate (PORTx_PCRn[SRE]=0), and • are configured for high drive strength (PORTx_PCRn[DSE]=1) 2. input pins • have their passive filter disabled (PORTx_PCRn[PFE]=0) 5.2 Nonswitching electrical specifications K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 10 Freescale Semiconductor, Inc.

General 5.2.1 Voltage and current operating requirements Table 1. Voltage and current operating requirements Symbol Description Min. Max. Unit Notes V Supply voltage 1.71 3.6 V DD V Analog supply voltage 1.71 3.6 V DDA V – V V -to-V differential voltage –0.1 0.1 V DD DDA DD DDA V – V V -to-V differential voltage –0.1 0.1 V SS SSA SS SSA V RTC battery supply voltage 1.71 3.6 V BAT V Input high voltage IH • 2.7 V ≤ V ≤ 3.6 V 0.7 × V — V DD DD • 1.7 V ≤ V ≤ 2.7 V 0.75 × V — V DD DD V Input low voltage IL • 2.7 V ≤ V ≤ 3.6 V — 0.35 × V V DD DD • 1.7 V ≤ V ≤ 2.7 V — 0.3 × V V DD DD V Input hysteresis 0.06 × V — V HYS DD I Digital pin negative DC injection current — single pin 1 ICDIO -5 — mA • V < V -0.3V IN SS I Analog2, EXTAL, and XTAL pin DC injection current — 3 ICAIO single pin mA • V < V -0.3V (Negative current injection) -5 — IN SS • V > V +0.3V (Positive current injection) — +5 IN DD I Contiguous pin DC injection current —regional limit, ICcont includes sum of negative injection currents or sum of positive injection currents of 16 contiguous pins -25 — mA • Negative current injection — +25 • Positive current injection V V voltage required to retain RAM 1.2 — V RAM DD V V voltage required to retain the VBAT register file V — V RFVBAT BAT POR_VBAT 1. All 5 V tolerant digital I/O pins are internally clamped to V through a ESD protection diode. There is no diode connection SS to V . If V greater than V (=V -0.3V) is observed, then there is no need to provide current limiting resistors at DD IN DIO_MIN SS the pads. If this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting resistor is calculated as R=(V -V )/|I |. DIO_MIN IN IC 2. Analog pins are defined as pins that do not have an associated general purpose I/O port function. 3. All analog pins are internally clamped to V and V through ESD protection diodes. If V is greater than V SS DD IN AIO_MIN (=V -0.3V) and V is less than V (=V +0.3V) is observed, then there is no need to provide current limiting SS IN AIO_MAX DD resistors at the pads. If these limits cannot be observed then a current limiting resistor is required. The negative DC injection current limiting resistor is calculated as R=(V -V )/|I |. The positive injection current limiting resistor is AIO_MIN IN IC calculated as R=(V -V )/|I |. Select the larger of these two calculated resistances. IN AIO_MAX IC K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 11

General 5.2.2 LVD and POR operating requirements Table 2. V supply LVD and POR operating requirements DD Symbol Description Min. Typ. Max. Unit Notes V Falling VDD POR detect voltage 0.8 1.1 1.5 V POR V Falling low-voltage detect threshold — high 2.48 2.56 2.64 V LVDH range (LVDV=01) Low-voltage warning thresholds — high range 1 V • Level 1 falling (LVWV=00) 2.62 2.70 2.78 V LVW1H V • Level 2 falling (LVWV=01) 2.72 2.80 2.88 V LVW2H V • Level 3 falling (LVWV=10) 2.82 2.90 2.98 V LVW3H V • Level 4 falling (LVWV=11) 2.92 3.00 3.08 V LVW4H V Low-voltage inhibit reset/recover hysteresis — — ±80 — mV HYSH high range V Falling low-voltage detect threshold — low range 1.54 1.60 1.66 V LVDL (LVDV=00) Low-voltage warning thresholds — low range 1 V • Level 1 falling (LVWV=00) 1.74 1.80 1.86 V LVW1L V • Level 2 falling (LVWV=01) 1.84 1.90 1.96 V LVW2L V • Level 3 falling (LVWV=10) 1.94 2.00 2.06 V LVW3L V • Level 4 falling (LVWV=11) 2.04 2.10 2.16 V LVW4L V Low-voltage inhibit reset/recover hysteresis — — ±60 — mV HYSL low range V Bandgap voltage reference 0.97 1.00 1.03 V BG t Internal low power oscillator period — factory 900 1000 1100 μs LPO trimmed 1. Rising thresholds are falling threshold + hysteresis voltage Table 3. VBAT power operating requirements Symbol Description Min. Typ. Max. Unit Notes V Falling VBAT supply POR detect voltage 0.8 1.1 1.5 V POR_VBAT K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 12 Freescale Semiconductor, Inc.

General 5.2.3 Voltage and current operating behaviors Table 4. Voltage and current operating behaviors Symbol Description Min. Max. Unit Notes V Output high voltage — high drive strength OH • 2.7 V ≤ V ≤ 3.6 V, I = -9mA V – 0.5 — V DD OH DD • 1.71 V ≤ V ≤ 2.7 V, I = -3mA V – 0.5 — V DD OH DD Output high voltage — low drive strength • 2.7 V ≤ V ≤ 3.6 V, I = -2mA V – 0.5 — V DD OH DD • 1.71 V ≤ V ≤ 2.7 V, I = -0.6mA V – 0.5 — V DD OH DD I Output high current total for all ports — 100 mA OHT V Output low voltage — high drive strength OL • 2.7 V ≤ V ≤ 3.6 V, I = 9mA — 0.5 V DD OL • 1.71 V ≤ V ≤ 2.7 V, I = 3mA — 0.5 V DD OL Output low voltage — low drive strength • 2.7 V ≤ V ≤ 3.6 V, I = 2mA — 0.5 V DD OL • 1.71 V ≤ V ≤ 2.7 V, I = 0.6mA — 0.5 V DD OL I Output low current total for all ports — 100 mA OLT I Input leakage current (per pin) for full temperature — 1 μA 1 IN range I Input leakage current (per pin) at 25°C — 0.025 μA 1 IN I Hi-Z (off-state) leakage current (per pin) — 1 μA OZ R Internal pullup resistors 20 50 kΩ 2 PU R Internal pulldown resistors 20 50 kΩ 3 PD 1. Measured at VDD=3.6V 2. Measured at V supply voltage = V min and Vinput = V DD DD SS 3. Measured at V supply voltage = V min and Vinput = V DD DD DD 5.2.4 Power mode transition operating behaviors All specifications except t , and VLLSx→RUN recovery times in the following table POR assume this clock configuration: • CPU and system clocks = 72 MHz • Bus clock = 36 MHz • FlexBus clock = 36 MHz • Flash clock = 24 MHz K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 13

General Table 5. Power mode transition operating behaviors Symbol Description Min. Max. Unit Notes t After a POR event, amount of time from the point V — 300 μs 1 POR DD reaches 1.71 V to execution of the first instruction across the operating temperature range of the chip. — 112 μs • VLLS1 → RUN — 74 μs • VLLS2 → RUN — 73 μs • VLLS3 → RUN — 5.9 μs • LLS → RUN — 5.8 μs • VLPS → RUN — 4.2 μs • STOP → RUN 1. Normal boot (FTFL_OPT[LPBOOT]=1) 5.2.5 Power consumption operating behaviors Table 6. Power consumption operating behaviors Symbol Description Min. Typ. Max. Unit Notes I Analog supply current — — See note mA 1 DDA I Run mode current — all peripheral clocks 2 DD_RUN disabled, code executing from flash • @ 1.8V — 21.5 25 mA • @ 3.0V — 21.5 30 mA I Run mode current — all peripheral clocks 3, 4 DD_RUN enabled, code executing from flash • @ 1.8V — 31 34 mA • @ 3.0V • @ 25°C — 31 34 mA • @ 125°C — 32 39 mA I Wait mode high frequency current at 3.0 V — all — 12.5 — mA 2 DD_WAIT peripheral clocks disabled I Wait mode reduced frequency current at 3.0 V — — 7.2 — mA 5 DD_WAIT all peripheral clocks disabled I Very-low-power run mode current at 3.0 V — all — 0.996 — mA 6 DD_VLPR peripheral clocks disabled I Very-low-power run mode current at 3.0 V — all — 1.46 — mA 7 DD_VLPR peripheral clocks enabled Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 14 Freescale Semiconductor, Inc.

General Table 6. Power consumption operating behaviors (continued) Symbol Description Min. Typ. Max. Unit Notes I Very-low-power wait mode current at 3.0 V — all — 0.61 — mA 8 DD_VLPW peripheral clocks disabled I Stop mode current at 3.0 V DD_STOP • @ –40 to 25°C — 0.35 0.567 mA • @ 70°C — 0.384 0.793 mA • @ 105°C — 0.628 1.2 mA I Very-low-power stop mode current at 3.0 V DD_VLPS • @ –40 to 25°C — 5.9 32.7 μA • @ 70°C — 26.1 59.8 μA • @ 105°C — 98.1 188 μA I Low leakage stop mode current at 3.0 V 9 DD_LLS • @ –40 to 25°C — 2.6 8.6 μA • @ 70°C — 10.3 29.1 μA • @ 105°C — 42.5 92.5 μA I Very low-leakage stop mode 3 current at 3.0 V 9 DD_VLLS3 • @ –40 to 25°C — 1.9 5.8 μA • @ 70°C — 6.9 12.1 μA • @ 105°C — 28.1 41.9 μA I Very low-leakage stop mode 2 current at 3.0 V DD_VLLS2 • @ –40 to 25°C — 1.59 5.5 μA • @ 70°C — 4.3 9.5 μA • @ 105°C — 17.5 34 μA I Very low-leakage stop mode 1 current at 3.0 V DD_VLLS1 • @ –40 to 25°C — 1.47 5.4 μA • @ 70°C — 2.97 8.1 μA • @ 105°C — 12.41 32 μA I Average current with RTC and 32kHz disabled at DD_VBAT 3.0 V • @ –40 to 25°C — 0.19 0.22 μA • @ 70°C — 0.49 0.64 μA • @ 105°C — 2.2 3.2 μA Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 15

General Table 6. Power consumption operating behaviors (continued) Symbol Description Min. Typ. Max. Unit Notes I Average current when CPU is not accessing RTC 10 DD_VBAT registers • @ 1.8V • @ –40 to 25°C — 0.57 0.67 μA • @ 70°C — 0.90 1.2 μA • @ 105°C — 2.4 3.5 μA • @ 3.0V • @ –40 to 25°C — 0.67 0.94 μA • @ 70°C — 1.0 1.4 μA • @ 105°C — 2.7 3.9 μA 1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See each module's specification for its supply current. 2. 72MHz core and system clock, 36MHz bus and FlexBus clock, and 24MHz flash clock. MCG configured for FEE mode. All peripheral clocks disabled. 3. 72MHz core and system clock, 36MHz bus and FlexBus clock, and 24MHz flash clock. MCG configured for FEE mode. All peripheral clocks enabled. 4. Max values are measured with CPU executing DSP instructions. 5. 25MHz core, system, bus, FlexBus and flash clock. MCG configured for FEI mode. 6. 4 MHz core and system clock, 4 MHz FlexBus and bus clock, and 1 MHz flash clock. MCG configured for BLPE mode. All peripheral clocks disabled. Code executing from flash. 7. 4 MHz core and system clock, 4 MHz FlexBus and bus clock, and 1 MHz flash clock. MCG configured for BLPE mode. All peripheral clocks enabled but peripherals are not in active operation. Code executing from flash. 8. 4 MHz core and system clock, 4 MHz FlexBus and bus clock, and 1 MHz flash clock. MCG configured for BLPE mode. All peripheral clocks disabled. 9. Data reflects devices with 128 KB of RAM. 10. Includes 32kHz oscillator current and RTC operation. 5.2.5.1 Diagram: Typical IDD_RUN operating behavior The following data was measured under these conditions: • MCG in FBE mode for 50 MHz and lower frequencies. MCG in FEE mode at greater than 50 MHz frequencies. • No GPIOs toggled • Code execution from flash with cache enabled • For the ALLOFF curve, all peripheral clocks are disabled except FTFL K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 16 Freescale Semiconductor, Inc.

General Figure 2. Run mode supply current vs. core frequency K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 17

General Figure 3. VLPR mode supply current vs. core frequency 5.2.6 Designing with radiated emissions in mind To find application notes that provide guidance on designing your system to minimize interference from radiated emissions: 1. Go to www.freescale.com. 2. Perform a keyword search for “EMC design.” 5.2.7 Capacitance attributes Table 7. Capacitance attributes Symbol Description Min. Max. Unit C Input capacitance: analog pins — 7 pF IN_A C Input capacitance: digital pins — 7 pF IN_D K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 18 Freescale Semiconductor, Inc.

General 5.3 Switching specifications 5.3.1 Device clock specifications Table 8. Device clock specifications Symbol Description Min. Max. Unit Notes Normal run mode f System and core clock — 72 MHz SYS f Bus clock — 50 MHz BUS FB_CLK FlexBus clock — 50 MHz f Flash clock — 25 MHz FLASH f LPTMR clock — 25 MHz LPTMR VLPR mode1 f System and core clock — 4 MHz SYS f Bus clock — 4 MHz BUS FB_CLK FlexBus clock — 4 MHz f Flash clock — 0.5 MHz FLASH f External reference clock — 16 MHz ERCLK f LPTMR clock — 25 MHz LPTMR_pin f LPTMR external reference clock — 16 MHz LPTMR_ERCLK f FlexCAN external reference clock — 8 MHz FlexCAN_ERCLK f I2S master clock — 12.5 MHz I2S_MCLK f I2S bit clock — 4 MHz I2S_BCLK 1. The frequency limitations in VLPR mode here override any frequency specification listed in the timing specification for any other module. 5.3.2 General switching specifications These general purpose specifications apply to all signals configured for GPIO, UART, CAN, CMT, and I2C signals. Table 9. General switching specifications Symbol Description Min. Max. Unit Notes GPIO pin interrupt pulse width (digital glitch filter 1.5 — Bus clock 1, 2 disabled) — Synchronous path cycles GPIO pin interrupt pulse width (digital glitch filter 100 — ns 3 disabled, analog filter enabled) — Asynchronous path Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 19

General Table 9. General switching specifications (continued) Symbol Description Min. Max. Unit Notes GPIO pin interrupt pulse width (digital glitch filter 16 — ns 3 disabled, analog filter disabled) — Asynchronous path External reset pulse width (digital glitch filter disabled) 100 — ns 3 Mode select (EZP_CS) hold time after reset 2 — Bus clock deassertion cycles Port rise and fall time (high drive strength) 4 • Slew disabled • 1.71 ≤ V ≤ 2.7V — 12 ns DD • 2.7 ≤ V ≤ 3.6V — 6 ns DD • Slew enabled • 1.71 ≤ V ≤ 2.7V — 36 ns DD • 2.7 ≤ V ≤ 3.6V — 24 ns DD Port rise and fall time (low drive strength) 5 • Slew disabled • 1.71 ≤ V ≤ 2.7V — 12 ns DD • 2.7 ≤ V ≤ 3.6V — 6 ns DD • Slew enabled • 1.71 ≤ V ≤ 2.7V — 36 ns DD • 2.7 ≤ V ≤ 3.6V — 24 ns DD 1. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or may not be recognized. In Stop, VLPS, LLS, and VLLSx modes, the synchronizer is bypassed so shorter pulses can be recognized in that case. 2. The greater synchronous and asynchronous timing must be met. 3. This is the minimum pulse width that is guaranteed to be recognized as a pin interrupt request in Stop, VLPS, LLS, and VLLSx modes. 4. 75pF load 5. 15pF load 5.4 Thermal specifications 5.4.1 Thermal operating requirements Table 10. Thermal operating requirements Symbol Description Min. Max. Unit T Die junction temperature –40 125 °C J T Ambient temperature –40 105 °C A K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 20 Freescale Semiconductor, Inc.

General 5.4.2 Thermal attributes Board type Symbol Description 121 100 LQFP Unit Notes MAPBGA Single-layer R Thermal 74 52 °C/W 1, 2 θJA (1s) resistance, junction to ambient (natural convection) Four-layer R Thermal 42 40 °C/W 1, 3 θJA (2s2p) resistance, junction to ambient (natural convection) Single-layer R Thermal 62 42 °C/W 1,3 θJMA (1s) resistance, junction to ambient (200 ft./ min. air speed) Four-layer R Thermal 38 34 °C/W 1,3 θJMA (2s2p) resistance, junction to ambient (200 ft./ min. air speed) — R Thermal 23 25 °C/W 4 θJB resistance, junction to board — R Thermal 19 12 °C/W 5 θJC resistance, junction to case — Ψ Thermal 4 2 °C/W 6 JT characterization parameter, junction to package top outside center (natural convection) 1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 2. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions—Natural Convection (Still Air) with the single layer board horizontal. For the LQFP, the board meets the JESD51-3 specification. For the MAPBGA, the board meets the JESD51-9 specification. 3. Determined according to JEDEC Standard JESD51-6, Integrated Circuits Thermal Test Method Environmental Conditions—Forced Convection (Moving Air) with the board horizontal. For the LQFP, the board meets the JESD51-7 specification. 4. Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal Test Method Environmental Conditions—Junction-to-Board. Board temperature is measured on the top surface of the board near the package. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 21

Peripheral operating requirements and behaviors 5. Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard, Microcircuits, with the cold plate temperature used for the case temperature. The value includes the thermal resistance of the interface material between the top of the package and the cold plate. 6. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions—Natural Convection (Still Air). 6 Peripheral operating requirements and behaviors 6.1 Core modules 6.1.1 Debug trace timing specifications Table 11. Debug trace operating behaviors Symbol Description Min. Max. Unit T Clock period Frequency dependent MHz cyc T Low pulse width 2 — ns wl T High pulse width 2 — ns wh T Clock and data rise time — 3 ns r T Clock and data fall time — 3 ns f T Data setup 3 — ns s T Data hold 2 — ns h Figure 4. TRACE_CLKOUT specifications TRACE_CLKOUT Ts Th Ts Th TRACE_D[3:0] Figure 5. Trace data specifications K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 22 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors 6.1.2 JTAG electricals Table 12. JTAG limited voltage range electricals Symbol Description Min. Max. Unit Operating voltage 2.7 3.6 V J1 TCLK frequency of operation MHz • Boundary Scan 0 10 • JTAG and CJTAG 0 25 • Serial Wire Debug 0 50 J2 TCLK cycle period 1/J1 — ns J3 TCLK clock pulse width • Boundary Scan 50 — ns • JTAG and CJTAG 20 — ns • Serial Wire Debug 10 — ns J4 TCLK rise and fall times — 3 ns J5 Boundary scan input data setup time to TCLK rise 20 — ns J6 Boundary scan input data hold time after TCLK rise 0 — ns J7 TCLK low to boundary scan output data valid — 25 ns J8 TCLK low to boundary scan output high-Z — 25 ns J9 TMS, TDI input data setup time to TCLK rise 8 — ns J10 TMS, TDI input data hold time after TCLK rise 1 — ns J11 TCLK low to TDO data valid — 17 ns J12 TCLK low to TDO high-Z — 17 ns J13 TRST assert time 100 — ns J14 TRST setup time (negation) to TCLK high 8 — ns Table 13. JTAG full voltage range electricals Symbol Description Min. Max. Unit Operating voltage 1.71 3.6 V J1 TCLK frequency of operation MHz • Boundary Scan 0 10 • JTAG and CJTAG 0 20 • Serial Wire Debug 0 40 J2 TCLK cycle period 1/J1 — ns J3 TCLK clock pulse width • Boundary Scan 50 — ns • JTAG and CJTAG 25 — ns • Serial Wire Debug 12.5 — ns J4 TCLK rise and fall times — 3 ns Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 23

Peripheral operating requirements and behaviors Table 13. JTAG full voltage range electricals (continued) Symbol Description Min. Max. Unit J5 Boundary scan input data setup time to TCLK rise 20 — ns J6 Boundary scan input data hold time after TCLK rise 0 — ns J7 TCLK low to boundary scan output data valid — 25 ns J8 TCLK low to boundary scan output high-Z — 25 ns J9 TMS, TDI input data setup time to TCLK rise 8 — ns J10 TMS, TDI input data hold time after TCLK rise 1.4 — ns J11 TCLK low to TDO data valid — 22.1 ns J12 TCLK low to TDO high-Z — 22.1 ns J13 TRST assert time 100 — ns J14 TRST setup time (negation) to TCLK high 8 — ns J2 J3 J3 TCLK (input) J4 J4 Figure 6. Test clock input timing TCLK J5 J6 Data inputs Input data valid J7 Data outputs Output data valid J8 Data outputs J7 Data outputs Output data valid Figure 7. Boundary scan (JTAG) timing K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 24 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors TCLK J9 J10 TDI/TMS Input data valid J11 TDO Output data valid J12 TDO J11 TDO Output data valid Figure 8. Test Access Port timing TCLK J14 J13 TRST Figure 9. TRST timing 6.2 System modules There are no specifications necessary for the device's system modules. 6.3 Clock modules K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 25

Peripheral operating requirements and behaviors 6.3.1 MCG specifications Table 14. MCG specifications Symbol Description Min. Typ. Max. Unit Notes f Internal reference frequency (slow clock) — — 32.768 — kHz ints_ft factory trimmed at nominal VDD and 25 °C f Internal reference frequency (slow clock) — user 31.25 — 39.0625 kHz ints_t trimmed Δ Resolution of trimmed average DCO output — ± 0.3 ± 0.6 %f 1 fdco_res_t dco frequency at fixed voltage and temperature — using SCTRIM and SCFTRIM Δf Resolution of trimmed average DCO output — ± 0.2 ± 0.5 %f 1 dco_res_t dco frequency at fixed voltage and temperature — using SCTRIM only Δf Total deviation of trimmed average DCO output — +0.5/-0.7 — %f 1 dco_t dco frequency over voltage and temperature Δf Total deviation of trimmed average DCO output — ± 0.3 ± 0.3 %f 1 dco_t dco frequency over fixed voltage and temperature range of 0–70°C f Internal reference frequency (fast clock) — — 4 — MHz intf_ft factory trimmed at nominal VDD and 25°C f Internal reference frequency (fast clock) — user 3 — 5 MHz intf_t trimmed at nominal VDD and 25 °C f Loss of external clock minimum frequency — (3/5) x — — kHz loc_low RANGE = 00 f ints_t f Loss of external clock minimum frequency — (16/5) x — — kHz loc_high RANGE = 01, 10, or 11 f ints_t FLL f FLL reference frequency range 31.25 — 39.0625 kHz fll_ref f DCO output Low range (DRS=00) 20 20.97 25 MHz 2, 3 dco frequency range 640 × f fll_ref Mid range (DRS=01) 40 41.94 50 MHz 1280 × f fll_ref Mid-high range (DRS=10) 60 62.91 75 MHz 1920 × f fll_ref High range (DRS=11) 80 83.89 100 MHz 2560 × f fll_ref f DCO output Low range (DRS=00) — 23.99 — MHz 4, 5 dco_t_DMX32 frequency 732 × f fll_ref Mid range (DRS=01) — 47.97 — MHz 1464 × f fll_ref Mid-high range (DRS=10) — 71.99 — MHz 2197 × f fll_ref High range (DRS=11) — 95.98 — MHz 2929 × f fll_ref Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 26 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 14. MCG specifications (continued) Symbol Description Min. Typ. Max. Unit Notes J FLL period jitter ps cyc_fll — 180 — • f = 48 MHz VCO — 150 — • f = 98 MHz VCO t FLL target frequency acquisition time — — 1 ms 6 fll_acquire PLL f VCO operating frequency 48.0 — 100 MHz vco I PLL operating current 7 pll — 1060 — µA • PLL @ 96 MHz (f = 8 MHz, f = osc_hi_1 pll_ref 2 MHz, VDIV multiplier = 48) I PLL operating current 7 pll — 600 — µA • PLL @ 48 MHz (f = 8 MHz, f = osc_hi_1 pll_ref 2 MHz, VDIV multiplier = 24) f PLL reference frequency range 2.0 — 4.0 MHz pll_ref J PLL period jitter (RMS) 8 cyc_pll • f = 48 MHz — 120 — ps vco • f = 100 MHz — 50 — ps vco J PLL accumulated jitter over 1µs (RMS) 8 acc_pll • f = 48 MHz — 1350 — ps vco • f = 100 MHz — 600 — ps vco D Lock entry frequency tolerance ± 1.49 — ± 2.98 % lock D Lock exit frequency tolerance ± 4.47 — ± 5.97 % unl t Lock detector detection time — — 150 × 10-6 s 9 pll_lock + 1075(1/ f ) pll_ref 1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock mode). 2. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=0. 3. The resulting system clock frequencies should not exceed their maximum specified values. The DCO frequency deviation (Δf ) over voltage and temperature should be considered. dco_t 4. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=1. 5. The resulting clock frequency must not exceed the maximum specified clock frequency of the device. 6. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed, DMX32 bit is changed, DRS bits are changed, or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running. 7. Excludes any oscillator currents that are also consuming power while PLL is in operation. 8. This specification was obtained using a Freescale developed PCB. PLL jitter is dependent on the noise characteristics of each PCB and results will vary. 9. This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL disabled (BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this specification assumes it is already running. 6.3.2 Oscillator electrical specifications This section provides the electrical characteristics of the module. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 27

Peripheral operating requirements and behaviors 6.3.2.1 Oscillator DC electrical specifications Table 15. Oscillator DC electrical specifications Symbol Description Min. Typ. Max. Unit Notes V Supply voltage 1.71 — 3.6 V DD I Supply current — low-power mode (HGO=0) 1 DDOSC • 32 kHz — 500 — nA • 4 MHz — 200 — μA • 8 MHz (RANGE=01) — 300 — μA • 16 MHz — 950 — μA • 24 MHz — 1.2 — mA • 32 MHz — 1.5 — mA I Supply current — high gain mode (HGO=1) 1 DDOSC • 32 kHz — 25 — μA • 4 MHz — 400 — μA • 8 MHz (RANGE=01) — 500 — μA • 16 MHz — 2.5 — mA • 24 MHz — 3 — mA • 32 MHz — 4 — mA C EXTAL load capacitance — — — 2, 3 x C XTAL load capacitance — — — 2, 3 y R Feedback resistor — low-frequency, low-power — — — MΩ 2, 4 F mode (HGO=0) Feedback resistor — low-frequency, high-gain — 10 — MΩ mode (HGO=1) Feedback resistor — high-frequency, low-power — — — MΩ mode (HGO=0) Feedback resistor — high-frequency, high-gain — 1 — MΩ mode (HGO=1) R Series resistor — low-frequency, low-power — — — kΩ S mode (HGO=0) Series resistor — low-frequency, high-gain mode — 200 — kΩ (HGO=1) Series resistor — high-frequency, low-power — — — kΩ mode (HGO=0) Series resistor — high-frequency, high-gain mode (HGO=1) — 0 — kΩ Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 28 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 15. Oscillator DC electrical specifications (continued) Symbol Description Min. Typ. Max. Unit Notes V 5 Peak-to-peak amplitude of oscillation (oscillator — 0.6 — V pp mode) — low-frequency, low-power mode (HGO=0) Peak-to-peak amplitude of oscillation (oscillator — V — V DD mode) — low-frequency, high-gain mode (HGO=1) Peak-to-peak amplitude of oscillation (oscillator — 0.6 — V mode) — high-frequency, low-power mode (HGO=0) Peak-to-peak amplitude of oscillation (oscillator — V — V DD mode) — high-frequency, high-gain mode (HGO=1) 1. V =3.3 V, Temperature =25 °C DD 2. See crystal or resonator manufacturer's recommendation 3. C ,C can be provided by using either the integrated capacitors or by using external components. x y 4. When low power mode is selected, R is integrated and must not be attached externally. F 5. The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to any other devices. 6.3.2.2 Oscillator frequency specifications Table 16. Oscillator frequency specifications Symbol Description Min. Typ. Max. Unit Notes f Oscillator crystal or resonator frequency — low 32 — 40 kHz osc_lo frequency mode (MCG_C2[RANGE]=00) f Oscillator crystal or resonator frequency — high 3 — 8 MHz osc_hi_1 frequency mode (low range) (MCG_C2[RANGE]=01) f Oscillator crystal or resonator frequency — high 8 — 32 MHz osc_hi_2 frequency mode (high range) (MCG_C2[RANGE]=1x) f Input clock frequency (external clock mode) — — 50 MHz 1, 2 ec_extal t Input clock duty cycle (external clock mode) 40 50 60 % dc_extal t Crystal startup time — 32 kHz low-frequency, — 750 — ms 3, 4 cst low-power mode (HGO=0) Crystal startup time — 32 kHz low-frequency, — 250 — ms high-gain mode (HGO=1) Crystal startup time — 8 MHz high-frequency — 0.6 — ms (MCG_C2[RANGE]=01), low-power mode (HGO=0) Crystal startup time — 8 MHz high-frequency — 1 — ms (MCG_C2[RANGE]=01), high-gain mode (HGO=1) 1. Other frequency limits may apply when external clock is being used as a reference for the FLL or PLL. 2. When transitioning from FBE to FEI mode, restrict the frequency of the input clock so that, when it is divided by FRDIV, it remains within the limits of the DCO input clock frequency. 3. Proper PC board layout procedures must be followed to achieve specifications. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 29

Peripheral operating requirements and behaviors 4. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S register being set. NOTE The 32 kHz oscillator works in low power mode by default and cannot be moved into high power/gain mode. 6.3.3 32 kHz Oscillator Electrical Characteristics This section describes the module electrical characteristics. 6.3.3.1 32 kHz oscillator DC electrical specifications Table 17. 32kHz oscillator DC electrical specifications Symbol Description Min. Typ. Max. Unit V Supply voltage 1.71 — 3.6 V BAT R Internal feedback resistor — 100 — MΩ F C Parasitical capacitance of EXTAL32 and XTAL32 — 5 7 pF para V 1 Peak-to-peak amplitude of oscillation — 0.6 — V pp 1. When a crystal is being used with the 32 kHz oscillator, the EXTAL32 and XTAL32 pins should only be connected to required oscillator components and must not be connected to any other devices. 6.3.3.2 32kHz oscillator frequency specifications Table 18. 32kHz oscillator frequency specifications Symbol Description Min. Typ. Max. Unit Notes f Oscillator crystal — 32.768 — kHz osc_lo t Crystal start-up time — 1000 — ms 1 start v Externally provided input clock amplitude 700 — V mV 2, 3 ec_extal32 BAT 1. Proper PC board layout procedures must be followed to achieve specifications. 2. This specification is for an externally supplied clock driven to EXTAL32 and does not apply to any other clock input. The oscillator remains enabled and XTAL32 must be left unconnected. 3. The parameter specified is a peak-to-peak value and V and V specifications do not apply. The voltage of the applied IH IL clock must be within the range of V to V . SS BAT 6.4 Memories and memory interfaces 6.4.1 Flash electrical specifications This section describes the electrical characteristics of the flash memory module. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 30 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors 6.4.1.1 Flash timing specifications — program and erase The following specifications represent the amount of time the internal charge pumps are active and do not include command overhead. Table 19. NVM program/erase timing specifications Symbol Description Min. Typ. Max. Unit Notes t Longword Program high-voltage time — 7.5 18 μs hvpgm4 t Sector Erase high-voltage time — 13 113 ms 1 hversscr t Erase Block high-voltage time for 32 KB — 52 452 ms 1 hversblk32k t Erase Block high-voltage time for 256 KB — 104 904 ms 1 hversblk256k 1. Maximum time based on expectations at cycling end-of-life. 6.4.1.2 Flash timing specifications — commands Table 20. Flash command timing specifications Symbol Description Min. Typ. Max. Unit Notes Read 1s Block execution time t • 32 KB data flash — — 0.5 ms rd1blk32k t • 256 KB program flash — — 1.7 ms rd1blk256k t Read 1s Section execution time (data flash — — 60 μs 1 rd1sec1k sector) t Read 1s Section execution time (program flash — — 60 μs 1 rd1sec2k sector) t Program Check execution time — — 45 μs 1 pgmchk t Read Resource execution time — — 30 μs 1 rdrsrc t Program Longword execution time — 65 145 μs pgm4 Erase Flash Block execution time 2 t • 32 KB data flash — 55 465 ms ersblk32k t • 256 KB program flash — 122 985 ms ersblk256k t Erase Flash Sector execution time — 14 114 ms 2 ersscr Program Section execution time t • 512 B program flash — 2.4 — ms pgmsec512p t • 512 B data flash — 4.7 — ms pgmsec512d t • 1 KB program flash — 4.7 — ms pgmsec1kp t • 1 KB data flash — 9.3 — ms pgmsec1kd t Read 1s All Blocks execution time — — 1.8 ms rd1all t Read Once execution time — — 25 μs 1 rdonce t Program Once execution time — 65 — μs pgmonce t Erase All Blocks execution time — 175 1500 ms 2 ersall Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 31

Peripheral operating requirements and behaviors Table 20. Flash command timing specifications (continued) Symbol Description Min. Typ. Max. Unit Notes t Verify Backdoor Access Key execution time — — 30 μs 1 vfykey Swap Control execution time t • control code 0x01 — 200 — μs swapx01 t • control code 0x02 — 70 150 μs swapx02 t • control code 0x04 — 70 150 μs swapx04 t • control code 0x08 — — 30 μs swapx08 Program Partition for EEPROM execution time t • 32 KB FlexNVM — 70 — ms pgmpart32k Set FlexRAM Function execution time: t • Control Code 0xFF — 50 — μs setramff t • 8 KB EEPROM backup — 0.3 0.5 ms setram8k t • 32 KB EEPROM backup — 0.7 1.0 ms setram32k Byte-write to FlexRAM for EEPROM operation t Byte-write to erased FlexRAM location execution — 175 260 μs 3 eewr8bers time Byte-write to FlexRAM execution time: t • 8 KB EEPROM backup — 340 1700 μs eewr8b8k t • 16 KB EEPROM backup — 385 1800 μs eewr8b16k t • 32 KB EEPROM backup — 475 2000 μs eewr8b32k Word-write to FlexRAM for EEPROM operation t Word-write to erased FlexRAM location — 175 260 μs eewr16bers execution time Word-write to FlexRAM execution time: t • 8 KB EEPROM backup — 340 1700 μs eewr16b8k t • 16 KB EEPROM backup — 385 1800 μs eewr16b16k t • 32 KB EEPROM backup — 475 2000 μs eewr16b32k Longword-write to FlexRAM for EEPROM operation t Longword-write to erased FlexRAM location — 360 540 μs eewr32bers execution time Longword-write to FlexRAM execution time: t • 8 KB EEPROM backup — 545 1950 μs eewr32b8k t • 16 KB EEPROM backup — 630 2050 μs eewr32b16k t • 32 KB EEPROM backup — 810 2250 μs eewr32b32k 1. Assumes 25 MHz flash clock frequency. 2. Maximum times for erase parameters based on expectations at cycling end-of-life. 3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 32 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors 6.4.1.3 Flash high voltage current behaviors Table 21. Flash high voltage current behaviors Symbol Description Min. Typ. Max. Unit I Average current adder during high voltage — 2.5 6.0 mA DD_PGM flash programming operation I Average current adder during high voltage — 1.5 4.0 mA DD_ERS flash erase operation 6.4.1.4 Reliability specifications Table 22. NVM reliability specifications Symbol Description Min. Typ.1 Max. Unit Notes Program Flash t Data retention after up to 10 K cycles 5 50 — years nvmretp10k t Data retention after up to 1 K cycles 20 100 — years nvmretp1k n Cycling endurance 10 K 50 K — cycles 2 nvmcycp Data Flash t Data retention after up to 10 K cycles 5 50 — years nvmretd10k t Data retention after up to 1 K cycles 20 100 — years nvmretd1k n Cycling endurance 10 K 50 K — cycles 2 nvmcycd FlexRAM as EEPROM t Data retention up to 100% of write endurance 5 50 — years nvmretee100 t Data retention up to 10% of write endurance 20 100 — years nvmretee10 Write endurance 3 n • EEPROM backup to FlexRAM ratio = 16 35 K 175 K — writes nvmwree16 n • EEPROM backup to FlexRAM ratio = 128 315 K 1.6 M — writes nvmwree128 n • EEPROM backup to FlexRAM ratio = 512 1.27 M 6.4 M — writes nvmwree512 n • EEPROM backup to FlexRAM ratio = 4096 10 M 50 M — writes nvmwree4k n • EEPROM backup to FlexRAM ratio = 8192 20 M 100 M — writes nvmwree8k 1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant 25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering Bulletin EB619. 2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T ≤ 125°C. j 3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and typical values assume all byte-writes to FlexRAM. 6.4.1.5 Write endurance to FlexRAM for EEPROM When the FlexNVM partition code is not set to full data flash, the EEPROM data set size can be set to any of several non-zero values. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 33

Peripheral operating requirements and behaviors The bytes not assigned to data flash via the FlexNVM partition code are used by the flash memory module to obtain an effective endurance increase for the EEPROM data. The built-in EEPROM record management system raises the number of program/erase cycles that can be attained prior to device wear-out by cycling the EEPROM data through a larger EEPROM NVM storage space. While different partitions of the FlexNVM are available, the intention is that a single choice for the FlexNVM partition code and EEPROM data set size is used throughout the entire lifetime of a given application. The EEPROM endurance equation and graph shown below assume that only one configuration is ever used. EEPROM – 2 × EEESPLIT × EEESIZE Writes_subsystem = × Write_efficiency × n nvmcycd EEESPLIT × EEESIZE where • Writes_subsystem — minimum number of writes to each FlexRAM location for subsystem (each subsystem can have different endurance) • EEPROM — allocated FlexNVM for each EEPROM subsystem based on DEPART; entered with the Program Partition command • EEESPLIT — FlexRAM split factor for subsystem; entered with the Program Partition command • EEESIZE — allocated FlexRAM based on DEPART; entered with the Program Partition command • Write_efficiency — • 0.25 for 8-bit writes to FlexRAM • 0.50 for 16-bit or 32-bit writes to FlexRAM • n — data flash cycling endurance (the following graph assumes 10,000 nvmcycd cycles) K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 34 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Figure 10. EEPROM backup writes to FlexRAM 6.4.2 EzPort Switching Specifications Table 23. EzPort switching specifications Num Description Min. Max. Unit Operating voltage 1.71 3.6 V EP1 EZP_CK frequency of operation (all commands except — f /2 MHz SYS READ) EP1a EZP_CK frequency of operation (READ command) — f /8 MHz SYS EP2 EZP_CS negation to next EZP_CS assertion 2 x t — ns EZP_CK EP3 EZP_CS input valid to EZP_CK high (setup) 5 — ns EP4 EZP_CK high to EZP_CS input invalid (hold) 5 — ns EP5 EZP_D input valid to EZP_CK high (setup) 2 — ns EP6 EZP_CK high to EZP_D input invalid (hold) 5 — ns EP7 EZP_CK low to EZP_Q output valid — 16 ns EP8 EZP_CK low to EZP_Q output invalid (hold) 0 — ns EP9 EZP_CS negation to EZP_Q tri-state — 12 ns K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 35

Peripheral operating requirements and behaviors EZP_CK EP3 EP4 EP2 EZP_CS EP9 EP8 EP7 EZP_Q (output) EP5 EP6 EZP_D (input) Figure 11. EzPort Timing Diagram 6.4.3 Flexbus Switching Specifications All processor bus timings are synchronous; input setup/hold and output delay are given in respect to the rising edge of a reference clock, FB_CLK. The FB_CLK frequency may be the same as the internal system bus frequency or an integer divider of that frequency. The following timing numbers indicate when data is latched or driven onto the external bus, relative to the Flexbus output clock (FB_CLK). All other timing relationships can be derived from these values. Table 24. Flexbus limited voltage range switching specifications Num Description Min. Max. Unit Notes Operating voltage 2.7 3.6 V Frequency of operation — FB_CLK MHz FB1 Clock period 20 — ns FB2 Address, data, and control output valid — 11.5 ns 1 FB3 Address, data, and control output hold 0.5 — ns 1 FB4 Data and FB_TA input setup 8.5 — ns 2 FB5 Data and FB_TA input hold 0.5 — ns 2 1. Specification is valid for all FB_AD[31:0], FB_BE/BWEn, FB_CSn, FB_OE, FB_R/W,FB_TBST, FB_TSIZ[1:0], FB_ALE, and FB_TS. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 36 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors 2. Specification is valid for all FB_AD[31:0] and FB_TA. Table 25. Flexbus full voltage range switching specifications Num Description Min. Max. Unit Notes Operating voltage 1.71 3.6 V Frequency of operation — FB_CLK MHz FB1 Clock period 1/FB_CLK — ns FB2 Address, data, and control output valid — 13.5 ns 1 FB3 Address, data, and control output hold 0 — ns 1 FB4 Data and FB_TA input setup 13.7 — ns 2 FB5 Data and FB_TA input hold 0.5 — ns 2 1. Specification is valid for all FB_AD[31:0], FB_BE/BWEn, FB_CSn, FB_OE, FB_R/W,FB_TBST, FB_TSIZ[1:0], FB_ALE, and FB_TS. 2. Specification is valid for all FB_AD[31:0] and FB_TA. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 37

Peripheral operating requirements and behaviors FB1 FB_CLK FB3 FB5 FB_A[Y] Address FB2 FB4 FB_D[X] Address Data FB_RW FB_TS FB_ALE AA=1 FB_CSn AA=0 FB_OEn FB4 FB_BEn FB5 AA=1 FB_TA AA=0 FB_TSIZ[1:0] TSIZ Figure 12. FlexBus read timing diagram K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 38 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors FB1 FB_CLK FB2 FB3 FB_A[Y] Address FB_D[X] Address Data FB_RW FB_TS FB_ALE AA=1 FB_CSn AA=0 FB_OEn FB4 FB_BEn FB5 AA=1 FB_TA AA=0 FB_TSIZ[1:0] TSIZ Figure 13. FlexBus write timing diagram 6.5 Security and integrity modules There are no specifications necessary for the device's security and integrity modules. 6.6 Analog K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 39

Peripheral operating requirements and behaviors 6.6.1 ADC electrical specifications The 16-bit accuracy specifications listed in Table 26 and Table 27 are achievable on the differential pins ADCx_DP0, ADCx_DM0. The ADCx_DP2 and ADCx_DM2 ADC inputs are connected to the PGA outputs and are not direct device pins. Accuracy specifications for these pins are defined in Table 28 and Table 29. All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy specifications. 6.6.1.1 16-bit ADC operating conditions Table 26. 16-bit ADC operating conditions Symbol Description Conditions Min. Typ.1 Max. Unit Notes V Supply voltage Absolute 1.71 — 3.6 V DDA ΔV Supply voltage Delta to V (V - V ) -100 0 +100 mV 2 DDA DD DD DDA ΔV Ground voltage Delta to V (V - V ) -100 0 +100 mV 2 SSA SS SS SSA V ADC reference 1.13 V V V REFH DDA DDA voltage high V ADC reference V V V V REFL SSA SSA SSA voltage low V Input voltage • 16-bit differential mode VREFL — 31/32 * V ADIN VREFH • All other modes VREFL — VREFH C Input capacitance • 16-bit mode — 8 10 pF ADIN • 8-/10-/12-bit modes — 4 5 R Input resistance — 2 5 kΩ ADIN R Analog source 13-/12-bit modes 3 AS resistance f < 4 MHz — — 5 kΩ ADCK f ADC conversion ≤ 13-bit mode 1.0 — 18.0 MHz 4 ADCK clock frequency f ADC conversion 16-bit mode 2.0 — 12.0 MHz 4 ADCK clock frequency C ADC conversion ≤ 13 bit modes 5 rate rate No ADC hardware averaging 20.000 — 818.330 Ksps Continuous conversions enabled, subsequent conversion time Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 40 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 26. 16-bit ADC operating conditions (continued) Symbol Description Conditions Min. Typ.1 Max. Unit Notes C ADC conversion 16-bit mode 5 rate rate No ADC hardware averaging 37.037 — 461.467 Ksps Continuous conversions enabled, subsequent conversion time 1. Typical values assume V = 3.0 V, Temp = 25 °C, f = 1.0 MHz unless otherwise stated. Typical values are for DDA ADCK reference only and are not tested in production. 2. DC potential difference. 3. This resistance is external to MCU. The analog source resistance must be kept as low as possible to achieve the best results. The results in this data sheet were derived from a system which has < 8 Ω analog source resistance. The R /C AS AS time constant should be kept to < 1ns. 4. To use the maximum ADC conversion clock frequency, the ADHSC bit must be set and the ADLPC bit must be clear. 5. For guidelines and examples of conversion rate calculation, download the ADC calculator tool SIMPLIFIED INPUT PIN EQUIVALENT CIRCUIT ZADIN SIMPLIFIED Pad Z CHANNEL SELECT AS leakage due to CIRCUIT ADC SAR R input R ENGINE AS protection ADIN V ADIN C V AS AS R ADIN IINNPPUUTT PPIINN R ADIN INPUT PIN R ADIN INPUT PIN C ADIN Figure 14. ADC input impedance equivalency diagram 6.6.1.2 16-bit ADC electrical characteristics Table 27. 16-bit ADC characteristics (V = V , V = V ) REFH DDA REFL SSA Symbol Description Conditions1 Min. Typ.2 Max. Unit Notes I Supply current 0.215 — 1.7 mA 3 DDA_ADC Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 41

Peripheral operating requirements and behaviors Table 27. 16-bit ADC characteristics (V = V , V = V ) (continued) REFH DDA REFL SSA Symbol Description Conditions1 Min. Typ.2 Max. Unit Notes ADC • ADLPC = 1, ADHSC = 0 1.2 2.4 3.9 MHz tADACK = 1/ asynchronous f clock source • ADLPC = 1, ADHSC = 1 2.4 4.0 6.1 MHz ADACK f ADACK • ADLPC = 0, ADHSC = 0 3.0 5.2 7.3 MHz • ADLPC = 0, ADHSC = 1 4.4 6.2 9.5 MHz Sample Time See Reference Manual chapter for sample times TUE Total unadjusted • 12-bit modes — ±4 ±6.8 LSB4 5 error • <12-bit modes — ±1.4 ±2.1 DNL Differential non- • 12-bit modes — ±0.7 -1.1 to +1.9 LSB4 5 linearity -0.3 to 0.5 • <12-bit modes — ±0.2 INL Integral non- • 12-bit modes — ±1.0 -2.7 to +1.9 LSB4 5 linearity -0.7 to +0.5 • <12-bit modes — ±0.5 E Full-scale error • 12-bit modes — -4 -5.4 LSB4 V = FS ADIN V • <12-bit modes — -1.4 -1.8 DDA 5 E Quantization • 16-bit modes — -1 to 0 — LSB4 Q error • ≤13-bit modes — — ±0.5 ENOB Effective number 16-bit differential mode 6 of bits • Avg = 32 12.8 14.5 — bits • Avg = 4 11.9 13.8 — bits 16-bit single-ended mode • Avg = 32 12.2 13.9 — bits • Avg = 4 11.4 13.1 — bits Signal-to-noise See ENOB SINAD 6.02 × ENOB + 1.76 dB plus distortion THD Total harmonic 16-bit differential mode 7 distortion • Avg = 32 — –94 — dB 16-bit single-ended mode — -85 — dB • Avg = 32 SFDR Spurious free 16-bit differential mode 7 dynamic range • Avg = 32 82 95 — dB 16-bit single-ended mode 78 90 — dB • Avg = 32 Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 42 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 27. 16-bit ADC characteristics (V = V , V = V ) (continued) REFH DDA REFL SSA Symbol Description Conditions1 Min. Typ.2 Max. Unit Notes E Input leakage I × R mV I = IL In AS In error leakage current (refer to the MCU's voltage and current operating ratings) Temp sensor Across the full temperature — 1.715 — mV/°C slope range of the device V Temp sensor 25 °C — 719 — mV TEMP25 voltage 1. All accuracy numbers assume the ADC is calibrated with V = V REFH DDA 2. Typical values assume V = 3.0 V, Temp = 25°C, f = 2.0 MHz unless otherwise stated. Typical values are for DDA ADCK reference only and are not tested in production. 3. The ADC supply current depends on the ADC conversion clock speed, conversion rate and the ADLPC bit (low power). For lowest power operation the ADLPC bit must be set, the HSC bit must be clear with 1 MHz ADC conversion clock speed. 4. 1 LSB = (V - V )/2N REFH REFL 5. ADC conversion clock < 16 MHz, Max hardware averaging (AVGE = %1, AVGS = %11) 6. Input data is 100 Hz sine wave. ADC conversion clock < 12 MHz. 7. Input data is 1 kHz sine wave. ADC conversion clock < 12 MHz. Figure 15. Typical ENOB vs. ADC_CLK for 16-bit differential mode K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 43

Peripheral operating requirements and behaviors Figure 16. Typical ENOB vs. ADC_CLK for 16-bit single-ended mode 6.6.1.3 16-bit ADC with PGA operating conditions Table 28. 16-bit ADC with PGA operating conditions Symbol Description Conditions Min. Typ.1 Max. Unit Notes V Supply voltage Absolute 1.71 — 3.6 V DDA V PGA ref voltage VREF_OU VREF_OU VREF_OU V 2, 3 REFPGA T T T V Input voltage V — V V ADIN SSA DDA V Input Common V — V V CM SSA DDA Mode range R Differential input Gain = 1, 2, 4, 8 — 128 — kΩ IN+ to IN-4 PGAD impedance Gain = 16, 32 — 64 — Gain = 64 — 32 — R Analog source — 100 — Ω 5 AS resistance T ADC sampling 1.25 — — µs 6 S time Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 44 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 28. 16-bit ADC with PGA operating conditions (continued) Symbol Description Conditions Min. Typ.1 Max. Unit Notes C ADC conversion ≤ 13 bit modes 18.484 — 450 Ksps 7 rate rate No ADC hardware averaging Continuous conversions enabled Peripheral clock = 50 MHz 16 bit modes 37.037 — 250 Ksps 8 No ADC hardware averaging Continuous conversions enabled Peripheral clock = 50 MHz 1. Typical values assume V = 3.0 V, Temp = 25°C, f = 6 MHz unless otherwise stated. Typical values are for DDA ADCK reference only and are not tested in production. 2. ADC must be configured to use the internal voltage reference (VREF_OUT) 3. PGA reference is internally connected to the VREF_OUT pin. If the user wishes to drive VREF_OUT with a voltage other than the output of the VREF module, the VREF module must be disabled. 4. For single ended configurations the input impedance of the driven input is R /2 PGAD 5. The analog source resistance (R ), external to MCU, should be kept as minimum as possible. Increased R causes drop AS AS in PGA gain without affecting other performances. This is not dependent on ADC clock frequency. 6. The minimum sampling time is dependent on input signal frequency and ADC mode of operation. A minimum of 1.25µs time should be allowed for F =4 kHz at 16-bit differential mode. Recommended ADC setting is: ADLSMP=1, ADLSTS=2 at in 8 MHz ADC clock. 7. ADC clock = 18 MHz, ADLSMP = 1, ADLST = 00, ADHSC = 1 8. ADC clock = 12 MHz, ADLSMP = 1, ADLST = 01, ADHSC = 1 6.6.1.4 16-bit ADC with PGA characteristics with Chop enabled (ADC_PGA[PGACHPb] =0) Table 29. 16-bit ADC with PGA characteristics Symbol Description Conditions Min. Typ.1 Max. Unit Notes I Supply current Low power — 420 644 μA 2 DDA_PGA (ADC_PGA[PGALPb]=0) I Input DC current A 3 DC_PGA Gain =1, V =1.2V, — 1.54 — μA REFPGA V =0.5V CM Gain =64, V =1.2V, — 0.57 — μA REFPGA V =0.1V CM Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 45

Peripheral operating requirements and behaviors Table 29. 16-bit ADC with PGA characteristics (continued) Symbol Description Conditions Min. Typ.1 Max. Unit Notes G Gain4 • PGAG=0 0.95 1 1.05 RAS < 100Ω • PGAG=1 1.9 2 2.1 • PGAG=2 3.8 4 4.2 • PGAG=3 7.6 8 8.4 • PGAG=4 15.2 16 16.6 • PGAG=5 30.0 31.6 33.2 • PGAG=6 58.8 63.3 67.8 BW Input signal • 16-bit modes — — 4 kHz bandwidth • < 16-bit modes — — 40 kHz PSRR Power supply Gain=1 — -84 — dB V = 3V DDA rejection ratio ±100mV, f = 50Hz, VDDA 60Hz CMRR Common mode • Gain=1 — -84 — dB V = CM rejection ratio 500mVpp, • Gain=64 — -85 — dB f = 50Hz, VCM 100Hz V Input offset — 0.2 — mV Output offset = OFS voltage V *(Gain+1) OFS T Gain switching — — 10 µs 5 GSW settling time dG/dT Gain drift over full • Gain=1 — 6 10 ppm/°C temperature range • Gain=64 — 31 42 ppm/°C dG/dV Gain drift over • Gain=1 — 0.07 0.21 %/V V from 1.71 DDA DDA supply voltage • Gain=64 to 3.6V — 0.14 0.31 %/V E Input leakage All modes I × R mV I = leakage IL In AS In error current (refer to the MCU's voltage and current operating ratings) V Maximum V 6 PP,DIFF differential input signal swing where V = V × 0.583 X REFPGA SNR Signal-to-noise • Gain=1 80 90 — dB 16-bit ratio differential • Gain=64 52 66 — dB mode, Average=32 THD Total harmonic • Gain=1 85 100 — dB 16-bit distortion differential • Gain=64 49 95 — dB mode, Average=32, f =100Hz in Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 46 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 29. 16-bit ADC with PGA characteristics (continued) Symbol Description Conditions Min. Typ.1 Max. Unit Notes SFDR Spurious free • Gain=1 85 105 — dB 16-bit dynamic range differential • Gain=64 53 88 — dB mode, Average=32, f =100Hz in ENOB Effective number • Gain=1, Average=4 11.6 13.4 — bits 16-bit of bits differential • Gain=64, Average=4 7.2 9.6 — bits mode,f =100Hz in • Gain=1, Average=32 12.8 14.5 — bits • Gain=2, Average=32 11.0 14.3 — bits • Gain=4, Average=32 7.9 13.8 — bits • Gain=8, Average=32 7.3 13.1 — bits • Gain=16, Average=32 6.8 12.5 — bits • Gain=32, Average=32 6.8 11.5 — bits • Gain=64, Average=32 7.5 10.6 — bits SINAD Signal-to-noise See ENOB 6.02 × ENOB + 1.76 dB plus distortion ratio 1. Typical values assume V =3.0V, Temp=25°C, f =6MHz unless otherwise stated. DDA ADCK 2. This current is a PGA module adder, in addition to ADC conversion currents. 3. Between IN+ and IN-. The PGA draws a DC current from the input terminals. The magnitude of the DC current is a strong function of input common mode voltage (V ) and the PGA gain. CM 4. Gain = 2PGAG 5. After changing the PGA gain setting, a minimum of 2 ADC+PGA conversions should be ignored. 6. Limit the input signal swing so that the PGA does not saturate during operation. Input signal swing is dependent on the PGA reference voltage and gain setting. 6.6.2 CMP and 6-bit DAC electrical specifications Table 30. Comparator and 6-bit DAC electrical specifications Symbol Description Min. Typ. Max. Unit V Supply voltage 1.71 — 3.6 V DD I Supply current, High-speed mode (EN=1, PMODE=1) — — 200 μA DDHS I Supply current, low-speed mode (EN=1, PMODE=0) — — 20 μA DDLS V Analog input voltage V – 0.3 — V V AIN SS DD V Analog input offset voltage — — 20 mV AIO V Analog comparator hysteresis1 H • CR0[HYSTCTR] = 00 — 5 — mV • CR0[HYSTCTR] = 01 — 10 — mV • CR0[HYSTCTR] = 10 — 20 — mV • CR0[HYSTCTR] = 11 — 30 — mV Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 47

Peripheral operating requirements and behaviors Table 30. Comparator and 6-bit DAC electrical specifications (continued) Symbol Description Min. Typ. Max. Unit V Output high V – 0.5 — — V CMPOh DD V Output low — — 0.5 V CMPOl t Propagation delay, high-speed mode (EN=1, 20 50 200 ns DHS PMODE=1) t Propagation delay, low-speed mode (EN=1, 80 250 600 ns DLS PMODE=0) Analog comparator initialization delay2 — — 40 μs I 6-bit DAC current adder (enabled) — 7 — μA DAC6b INL 6-bit DAC integral non-linearity –0.5 — 0.5 LSB3 DNL 6-bit DAC differential non-linearity –0.3 — 0.3 LSB 1. Typical hysteresis is measured with input voltage range limited to 0.6 to V -0.6V. DD 2. Comparator initialization delay is defined as the time between software writes to change control inputs (Writes to DACEN, VRSEL, PSEL, MSEL, VOSEL) and the comparator output settling to a stable level. 3. 1 LSB = V /64 reference 0.08 0.07 0.06 0.05 HYSTCTR Setting V) s ( eri 00 er 0.04 yst 01 H P 1100 M C 0.03 11 0.02 0.01 0 0.1 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 Vin level (V) Figure 17. Typical hysteresis vs. Vin level (VDD=3.3V, PMODE=0) K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 48 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors 0.18 0.16 0.14 0.12 HYSTCTR Setting V) s ( 0.1 eri 00 er yst 01 H P P 00.0088 1100 M C 11 0.06 0.04 0.02 0 0.1 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 Vin level (V) Figure 18. Typical hysteresis vs. Vin level (VDD=3.3V, PMODE=1) 6.6.3 12-bit DAC electrical characteristics 6.6.3.1 12-bit DAC operating requirements Table 31. 12-bit DAC operating requirements Symbol Desciption Min. Max. Unit Notes V Supply voltage 1.71 3.6 V DDA V Reference voltage 1.13 3.6 V 1 DACR T Temperature Operating temperature °C A range of the device C Output load capacitance — 100 pF 2 L I Output load current — 1 mA L 1. The DAC reference can be selected to be V or the voltage output of the VREF module (VREF_OUT) DDA 2. A small load capacitance (47 pF) can improve the bandwidth performance of the DAC K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 49

Peripheral operating requirements and behaviors 6.6.3.2 12-bit DAC operating behaviors Table 32. 12-bit DAC operating behaviors Symbol Description Min. Typ. Max. Unit Notes I Supply current — low-power mode — — 150 μA DDA_DACL P I Supply current — high-speed mode — — 700 μA DDA_DACH P t Full-scale settling time (0x080 to 0xF7F) — — 100 200 μs 1 DACLP low-power mode t Full-scale settling time (0x080 to 0xF7F) — — 15 30 μs 1 DACHP high-power mode t Code-to-code settling time (0xBF8 to 0xC08) — 0.7 1 μs 1 CCDACLP — low-power mode and high-speed mode V DAC output voltage range low — high-speed — — 100 mV dacoutl mode, no load, DAC set to 0x000 V DAC output voltage range high — high- V — V mV dacouth DACR DACR speed mode, no load, DAC set to 0xFFF −100 INL Integral non-linearity error — high speed — — ±8 LSB 2 mode DNL Differential non-linearity error — V > 2 — — ±1 LSB 3 DACR V DNL Differential non-linearity error — V = — — ±1 LSB 4 DACR VREF_OUT V Offset error — ±0.4 ±0.8 %FSR 5 OFFSET E Gain error — ±0.1 ±0.6 %FSR 5 G PSRR Power supply rejection ratio, V ≥ 2.4 V 60 — 90 dB DDA T Temperature coefficient offset voltage — 3.7 — μV/C 6 CO T Temperature coefficient gain error — 0.000421 — %FSR/C GE Rop Output resistance load = 3 kΩ — — 250 Ω SR Slew rate -80h→ F7Fh→ 80h V/μs • High power (SP ) 1.2 1.7 — HP • Low power (SP ) 0.05 0.12 — LP CT Channel to channel cross talk — — -80 dB BW 3dB bandwidth kHz • High power (SP ) 550 — — HP • Low power (SP ) 40 — — LP 1. Settling within ±1 LSB 2. The INL is measured for 0 + 100 mV to V −100 mV DACR 3. The DNL is measured for 0 + 100 mV to V −100 mV DACR 4. The DNL is measured for 0 + 100 mV to V −100 mV with V > 2.4 V DACR DDA 5. Calculated by a best fit curve from V + 100 mV to V − 100 mV SS DACR 6. V = 3.0 V, reference select set for V (DACx_CO:DACRFS = 1), high power mode (DACx_C0:LPEN = 0), DAC set to DDA DDA 0x800, temperature range is across the full range of the device K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 50 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Figure 19. Typical INL error vs. digital code K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 51

Peripheral operating requirements and behaviors Figure 20. Offset at half scale vs. temperature 6.6.4 Voltage reference electrical specifications Table 33. VREF full-range operating requirements Symbol Description Min. Max. Unit Notes V Supply voltage 1.71 3.6 V DDA T Temperature Operating temperature °C A range of the device C Output load capacitance 100 nF 1, 2 L 1. C must be connected to VREF_OUT if the VREF_OUT functionality is being used for either an internal or external L reference. 2. The load capacitance should not exceed +/-25% of the nominal specified C value over the operating temperature range of L the device. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 52 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 34. VREF full-range operating behaviors Symbol Description Min. Typ. Max. Unit Notes V Voltage reference output with factory trim at 1.1915 1.195 1.1977 V out nominal V and temperature=25C DDA V Voltage reference output — factory trim 1.1584 — 1.2376 V out V Voltage reference output — user trim 1.193 — 1.197 V out V Voltage reference trim step — 0.5 — mV step V Temperature drift (Vmax -Vmin across the full — — 80 mV tdrift temperature range) I Bandgap only current — — 80 µA 1 bg I Low-power buffer current — — 360 uA 1 lp I High-power buffer current — — 1 mA 1 hp ΔV Load regulation µV 1, 2 LOAD • current = ± 1.0 mA — 200 — T Buffer startup time — — 100 µs stup V Voltage drift (Vmax -Vmin across the full voltage — 2 — mV 1 vdrift range) 1. See the chip's Reference Manual for the appropriate settings of the VREF Status and Control register. 2. Load regulation voltage is the difference between the VREF_OUT voltage with no load vs. voltage with defined load Table 35. VREF limited-range operating requirements Symbol Description Min. Max. Unit Notes T Temperature 0 50 °C A Table 36. VREF limited-range operating behaviors Symbol Description Min. Max. Unit Notes V Voltage reference output with factory trim 1.173 1.225 V out 6.7 Timers See General switching specifications. 6.8 Communication interfaces K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 53

Peripheral operating requirements and behaviors 6.8.1 CAN switching specifications See General switching specifications. 6.8.2 DSPI switching specifications (limited voltage range) The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with master and slave operations. Many of the transfer attributes are programmable. The tables below provide DSPI timing characteristics for classic SPI timing modes. Refer to the DSPI chapter of the Reference Manual for information on the modified transfer formats used for communicating with slower peripheral devices. Table 37. Master mode DSPI timing (limited voltage range) Num Description Min. Max. Unit Notes Operating voltage 2.7 3.6 V Frequency of operation — 25 MHz DS1 DSPI_SCK output cycle time 2 x t — ns BUS DS2 DSPI_SCK output high/low time (t /2) − 2 (t /2) + 2 ns SCK SCK DS3 DSPI_PCSn valid to DSPI_SCK delay (t x 2) − — ns 1 BUS 2 DS4 DSPI_SCK to DSPI_PCSn invalid delay (t x 2) − — ns 2 BUS 2 DS5 DSPI_SCK to DSPI_SOUT valid — 8.5 ns DS6 DSPI_SCK to DSPI_SOUT invalid −2 — ns DS7 DSPI_SIN to DSPI_SCK input setup 15 — ns DS8 DSPI_SCK to DSPI_SIN input hold 0 — ns 1. The delay is programmable in SPIx_CTARn[PSSCK] and SPIx_CTARn[CSSCK]. 2. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC]. DSPI_PCSn DS3 DS2 DS1 DS4 DSPI_SCK DS8 (CPOL=0) DS7 DSPI_SIN First data Data Last data DS5 DS6 DSPI_SOUT First data Data Last data Figure 21. DSPI classic SPI timing — master mode K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 54 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 38. Slave mode DSPI timing (limited voltage range) Num Description Min. Max. Unit Operating voltage 2.7 3.6 V Frequency of operation 12.5 MHz DS9 DSPI_SCK input cycle time 4 x t — ns BUS DS10 DSPI_SCK input high/low time (t /2) − 2 (t /2) + 2 ns SCK SCK DS11 DSPI_SCK to DSPI_SOUT valid — 10 ns DS12 DSPI_SCK to DSPI_SOUT invalid 0 — ns DS13 DSPI_SIN to DSPI_SCK input setup 2 — ns DS14 DSPI_SCK to DSPI_SIN input hold 7 — ns DS15 DSPI_SS active to DSPI_SOUT driven — 14 ns DS16 DSPI_SS inactive to DSPI_SOUT not driven — 14 ns DSPI_SS DS10 DS9 DSPI_SCK (CPOL=0) DS15 DS12 DS11 DS16 DSPI_SOUT First data Data Last data DS13 DS14 DSPI_SIN First data Data Last data Figure 22. DSPI classic SPI timing — slave mode 6.8.3 DSPI switching specifications (full voltage range) The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with master and slave operations. Many of the transfer attributes are programmable. The tables below provides DSPI timing characteristics for classic SPI timing modes. Refer to the DSPI chapter of the Reference Manual for information on the modified transfer formats used for communicating with slower peripheral devices. Table 39. Master mode DSPI timing (full voltage range) Num Description Min. Max. Unit Notes Operating voltage 1.71 3.6 V 1 Frequency of operation — 12.5 MHz DS1 DSPI_SCK output cycle time 4 x t — ns BUS Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 55

Peripheral operating requirements and behaviors Table 39. Master mode DSPI timing (full voltage range) (continued) Num Description Min. Max. Unit Notes DS2 DSPI_SCK output high/low time (t /2) - 4 (t + 4 ns SCK SCK/2) DS3 DSPI_PCSn valid to DSPI_SCK delay (t x 2) − — ns 2 BUS 4 DS4 DSPI_SCK to DSPI_PCSn invalid delay (t x 2) − — ns 3 BUS 4 DS5 DSPI_SCK to DSPI_SOUT valid — 10 ns DS6 DSPI_SCK to DSPI_SOUT invalid -4.5 — ns DS7 DSPI_SIN to DSPI_SCK input setup 20.5 — ns DS8 DSPI_SCK to DSPI_SIN input hold 0 — ns 1. The DSPI module can operate across the entire operating voltage for the processor, but to run across the full voltage range the maximum frequency of operation is reduced. 2. The delay is programmable in SPIx_CTARn[PSSCK] and SPIx_CTARn[CSSCK]. 3. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC]. DSPI_PCSn DS3 DS2 DS1 DS4 DSPI_SCK DS8 (CPOL=0) DS7 DSPI_SIN First data Data Last data DS5 DS6 DSPI_SOUT First data Data Last data Figure 23. DSPI classic SPI timing — master mode Table 40. Slave mode DSPI timing (full voltage range) Num Description Min. Max. Unit Operating voltage 1.71 3.6 V Frequency of operation — 6.25 MHz DS9 DSPI_SCK input cycle time 8 x t — ns BUS DS10 DSPI_SCK input high/low time (t /2) - 4 (t + 4 ns SCK SCK/2) DS11 DSPI_SCK to DSPI_SOUT valid — 20 ns DS12 DSPI_SCK to DSPI_SOUT invalid 0 — ns DS13 DSPI_SIN to DSPI_SCK input setup 2 — ns DS14 DSPI_SCK to DSPI_SIN input hold 7 — ns DS15 DSPI_SS active to DSPI_SOUT driven — 19 ns DS16 DSPI_SS inactive to DSPI_SOUT not driven — 19 ns K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 56 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors DSPI_SS DS10 DS9 DSPI_SCK (CPOL=0) DS15 DS12 DS11 DS16 DSPI_SOUT First data Data Last data DS13 DS14 DSPI_SIN First data Data Last data Figure 24. DSPI classic SPI timing — slave mode 6.8.4 I2C switching specifications See General switching specifications. 6.8.5 UART switching specifications See General switching specifications. 6.8.6 I2S/SAI Switching Specifications This section provides the AC timing for the I2S/SAI module in master mode (clocks are driven) and slave mode (clocks are input). All timing is given for noninverted serial clock polarity (TCR2[BCP] is 0, RCR2[BCP] is 0) and a noninverted frame sync (TCR4[FSP] is 0, RCR4[FSP] is 0). If the polarity of the clock and/or the frame sync have been inverted, all the timing remains valid by inverting the bit clock signal (BCLK) and/or the frame sync (FS) signal shown in the following figures. 6.8.6.1 Normal Run, Wait and Stop mode performance over the full operating voltage range This section provides the operating performance over the full operating voltage for the device in Normal Run, Wait and Stop modes. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 57

Peripheral operating requirements and behaviors Table 41. I2S/SAI master mode timing in Normal Run, Wait and Stop modes (full voltage range) Num. Characteristic Min. Max. Unit Operating voltage 1.71 3.6 V S1 I2S_MCLK cycle time 40 — ns S2 I2S_MCLK pulse width high/low 45% 55% MCLK period S3 I2S_TX_BCLK/I2S_RX_BCLK cycle time (output) 80 — ns S4 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low 45% 55% BCLK period S5 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/ — 15 ns I2S_RX_FS output valid S6 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/ -1.0 — ns I2S_RX_FS output invalid S7 I2S_TX_BCLK to I2S_TXD valid — 15 ns S8 I2S_TX_BCLK to I2S_TXD invalid 0 — ns S9 I2S_RXD/I2S_RX_FS input setup before 20.5 — ns I2S_RX_BCLK S10 I2S_RXD/I2S_RX_FS input hold after I2S_RX_BCLK 0 — ns S1 S2 S2 I2S_MCLK (output) S3 I2S_TX_BCLK/ S4 I2S_RX_BCLK (output) S4 S5 S6 I2S_TX_FS/ I2S_RX_FS (output) S9 S10 I2S_TX_FS/ I2S_RX_FS (input) S7 S7 S8 S8 I2S_TXD S9 S10 I2S_RXD Figure 25. I2S/SAI timing — master modes Table 42. I2S/SAI slave mode timing in Normal Run, Wait and Stop modes (full voltage range) Num. Characteristic Min. Max. Unit Operating voltage 1.71 3.6 V S11 I2S_TX_BCLK/I2S_RX_BCLK cycle time (input) 80 — ns S12 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low 45% 55% MCLK period (input) Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 58 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 42. I2S/SAI slave mode timing in Normal Run, Wait and Stop modes (full voltage range) (continued) Num. Characteristic Min. Max. Unit S13 I2S_TX_FS/I2S_RX_FS input setup before 5.8 — ns I2S_TX_BCLK/I2S_RX_BCLK S14 I2S_TX_FS/I2S_RX_FS input hold after 2 — ns I2S_TX_BCLK/I2S_RX_BCLK S16 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output invalid 0 — ns S17 I2S_RXD setup before I2S_RX_BCLK 5.8 — ns S18 I2S_RXD hold after I2S_RX_BCLK 2 — ns S19 I2S_TX_FS input assertion to I2S_TXD output valid1 — 25 ns 1. Applies to first bit in each frame and only if the TCR4[FSE] bit is clear S11 S12 I2S_TX_BCLK/ S12 I2S_RX_BCLK (input) S15 S16 I2S_TX_FS/ I2S_RX_FS (output) S13 S14 I2S_TX_FS/ I2S_RX_FS (input) S15 S19 S15 S16 S16 I2S_TXD S17 S18 I2S_RXD Figure 26. I2S/SAI timing — slave modes 6.8.6.2 VLPR, VLPW, and VLPS mode performance over the full operating voltage range This section provides the operating performance over the full operating voltage for the device in VLPR, VLPW, and VLPS modes. Table 43. I2S/SAI master mode timing in VLPR, VLPW, and VLPS modes (full voltage range) Num. Characteristic Min. Max. Unit Operating voltage 1.71 3.6 V S1 I2S_MCLK cycle time 62.5 — ns S2 I2S_MCLK pulse width high/low 45% 55% MCLK period S3 I2S_TX_BCLK/I2S_RX_BCLK cycle time (output) 250 — ns S4 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low 45% 55% BCLK period Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 59

Peripheral operating requirements and behaviors Table 43. I2S/SAI master mode timing in VLPR, VLPW, and VLPS modes (full voltage range) (continued) Num. Characteristic Min. Max. Unit S5 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/ — 45 ns I2S_RX_FS output valid S6 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/ 0 — ns I2S_RX_FS output invalid S7 I2S_TX_BCLK to I2S_TXD valid — 45 ns S8 I2S_TX_BCLK to I2S_TXD invalid 0 — ns S9 I2S_RXD/I2S_RX_FS input setup before 53 — ns I2S_RX_BCLK S10 I2S_RXD/I2S_RX_FS input hold after I2S_RX_BCLK 0 — ns S1 S2 S2 I2S_MCLK (output) S3 I2S_TX_BCLK/ S4 I2S_RX_BCLK (output) S4 S5 S6 I2S_TX_FS/ I2S_RX_FS (output) S9 S10 I2S_TX_FS/ I2S_RX_FS (input) S7 S7 S8 S8 I2S_TXD S9 S10 I2S_RXD Figure 27. I2S/SAI timing — master modes Table 44. I2S/SAI slave mode timing in VLPR, VLPW, and VLPS modes (full voltage range) Num. Characteristic Min. Max. Unit Operating voltage 1.71 3.6 V S11 I2S_TX_BCLK/I2S_RX_BCLK cycle time (input) 250 — ns S12 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low 45% 55% MCLK period (input) S13 I2S_TX_FS/I2S_RX_FS input setup before 30 — ns I2S_TX_BCLK/I2S_RX_BCLK S14 I2S_TX_FS/I2S_RX_FS input hold after 7.6 — ns I2S_TX_BCLK/I2S_RX_BCLK S15 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output valid — 67 ns S16 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output invalid 0 — ns Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 60 Freescale Semiconductor, Inc.

Peripheral operating requirements and behaviors Table 44. I2S/SAI slave mode timing in VLPR, VLPW, and VLPS modes (full voltage range) (continued) Num. Characteristic Min. Max. Unit S17 I2S_RXD setup before I2S_RX_BCLK 30 — ns S18 I2S_RXD hold after I2S_RX_BCLK 6.5 — ns S19 I2S_TX_FS input assertion to I2S_TXD output valid1 — 72 ns 1. Applies to first bit in each frame and only if the TCR4[FSE] bit is clear S11 S12 I2S_TX_BCLK/ S12 I2S_RX_BCLK (input) S15 S16 I2S_TX_FS/ I2S_RX_FS (output) S13 S14 I2S_TX_FS/ I2S_RX_FS (input) S15 S19 S15 S16 S16 I2S_TXD S17 S18 I2S_RXD Figure 28. I2S/SAI timing — slave modes 6.9 Human-machine interfaces (HMI) 6.9.1 TSI electrical specifications Table 45. TSI electrical specifications Symbol Description Min. Typ. Max. Unit Notes V Operating voltage 1.71 — 3.6 V DDTSI C Target electrode capacitance range 1 20 500 pF 1 ELE f Reference oscillator frequency — 8 15 MHz 2, 3 REFmax f Electrode oscillator frequency — 1 1.8 MHz 2, 4 ELEmax C Internal reference capacitor — 1 — pF REF V Oscillator delta voltage — 500 — mV 2, 5 DELTA I Reference oscillator current source base current μA 2, 6 REF — 2 3 • 2 μA setting (REFCHRG = 0) • 32 μA setting (REFCHRG = 15) — 36 50 Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 61

Dimensions Table 45. TSI electrical specifications (continued) Symbol Description Min. Typ. Max. Unit Notes I Electrode oscillator current source base current μA 2, 7 ELE — 2 3 • 2 μA setting (EXTCHRG = 0) • 32 μA setting (EXTCHRG = 15) — 36 50 Pres5 Electrode capacitance measurement precision — 8.3333 38400 fF/count 8 Pres20 Electrode capacitance measurement precision — 8.3333 38400 fF/count 9 Pres100 Electrode capacitance measurement precision — 8.3333 38400 fF/count 10 MaxSens Maximum sensitivity 0.008 1.46 — fF/count 11 Res Resolution — — 16 bits T Response time @ 20 pF 8 15 25 μs 12 Con20 I Current added in run mode — 55 — μA TSI_RUN I Low power mode current adder — 1.3 2.5 μA 13 TSI_LP 1. The TSI module is functional with capacitance values outside this range. However, optimal performance is not guaranteed. 2. Fixed external capacitance of 20 pF. 3. REFCHRG = 2, EXTCHRG=0. 4. REFCHRG = 0, EXTCHRG = 10. 5. V = 3.0 V. DD 6. The programmable current source value is generated by multiplying the SCANC[REFCHRG] value and the base current. 7. The programmable current source value is generated by multiplying the SCANC[EXTCHRG] value and the base current. 8. Measured with a 5 pF electrode, reference oscillator frequency of 10 MHz, PS = 128, NSCN = 8; Iext = 16. 9. Measured with a 20 pF electrode, reference oscillator frequency of 10 MHz, PS = 128, NSCN = 2; Iext = 16. 10. Measured with a 20 pF electrode, reference oscillator frequency of 10 MHz, PS = 16, NSCN = 3; Iext = 16. 11. Sensitivity defines the minimum capacitance change when a single count from the TSI module changes. Sensitivity depends on the configuration used. The documented values are provided as examples calculated for a specific configuration of operating conditions using the following equation: (C * I )/( I * PS * NSCN) ref ext ref The typical value is calculated with the following configuration: Iext = 6 μA (EXTCHRG = 2), PS = 128, NSCN = 2, Iref = 16 μA (REFCHRG = 7), Cref = 1.0 pF The minimum value is calculated with the following configuration: Iext = 2 μA (EXTCHRG = 0), PS = 128, NSCN = 32, Iref = 32 μA (REFCHRG = 15), Cref = 0.5 pF The highest possible sensitivity is the minimum value because it represents the smallest possible capacitance that can be measured by a single count. 12. Time to do one complete measurement of the electrode. Sensitivity resolution of 0.0133 pF, PS = 0, NSCN = 0, 1 electrode, EXTCHRG = 7. 13. REFCHRG=0, EXTCHRG=4, PS=7, NSCN=0F, LPSCNITV=F, LPO is selected (1 kHz), and fixed external capacitance of 20 pF. Data is captured with an average of 7 periods window. 7 Dimensions 7.1 Obtaining package dimensions Package dimensions are provided in package drawings. To find a package drawing, go to www.freescale.com and perform a keyword search for the drawing’s document number: K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 62 Freescale Semiconductor, Inc.

Pinout If you want the drawing for this package Then use this document number 100-pin LQFP 98ASS23308W 121-pin MAPBGA 98ASA00344D 8 Pinout 8.1 K10 Signal Multiplexing and Pin Assignments The following table shows the signals available on each pin and the locations of these pins on the devices supported by this document. The Port Control Module is responsible for selecting which ALT functionality is available on each pin. 121 100 Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EzPort MAP LQFP BGA E4 1 PTE0 ADC1_SE4a ADC1_SE4a PTE0 SPI1_PCS1 UART1_TX I2C1_SDA RTC_CLKOUT E3 2 PTE1/ ADC1_SE5a ADC1_SE5a PTE1/ SPI1_SOUT UART1_RX I2C1_SCL SPI1_SIN LLWU_P0 LLWU_P0 E2 3 PTE2/ ADC1_SE6a ADC1_SE6a PTE2/ SPI1_SCK UART1_CTS_ LLWU_P1 LLWU_P1 b F4 4 PTE3 ADC1_SE7a ADC1_SE7a PTE3 SPI1_SIN UART1_RTS_ SPI1_SOUT b E7 — VDD VDD VDD F7 — VSS VSS VSS H7 5 PTE4/ DISABLED PTE4/ SPI1_PCS0 UART3_TX LLWU_P2 LLWU_P2 G4 6 PTE5 DISABLED PTE5 SPI1_PCS2 UART3_RX F3 7 PTE6 DISABLED PTE6 SPI1_PCS3 UART3_CTS_ I2S0_MCLK b E6 8 VDD VDD VDD G7 9 VSS VSS VSS F1 10 PTE16 ADC0_SE4a ADC0_SE4a PTE16 SPI0_PCS0 UART2_TX FTM_CLKIN0 FTM0_FLT3 F2 11 PTE17 ADC0_SE5a ADC0_SE5a PTE17 SPI0_SCK UART2_RX FTM_CLKIN1 LPTMR0_ ALT3 G1 12 PTE18 ADC0_SE6a ADC0_SE6a PTE18 SPI0_SOUT UART2_CTS_ I2C0_SDA b G2 13 PTE19 ADC0_SE7a ADC0_SE7a PTE19 SPI0_SIN UART2_RTS_ I2C0_SCL b L6 — VSS VSS VSS H1 14 ADC0_DP1 ADC0_DP1 ADC0_DP1 H2 15 ADC0_DM1 ADC0_DM1 ADC0_DM1 J1 16 ADC1_DP1 ADC1_DP1 ADC1_DP1 K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 63

Pinout 121 100 Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EzPort MAP LQFP BGA J2 17 ADC1_DM1 ADC1_DM1 ADC1_DM1 K1 18 PGA0_DP/ PGA0_DP/ PGA0_DP/ ADC0_DP0/ ADC0_DP0/ ADC0_DP0/ ADC1_DP3 ADC1_DP3 ADC1_DP3 K2 19 PGA0_DM/ PGA0_DM/ PGA0_DM/ ADC0_DM0/ ADC0_DM0/ ADC0_DM0/ ADC1_DM3 ADC1_DM3 ADC1_DM3 L1 20 PGA1_DP/ PGA1_DP/ PGA1_DP/ ADC1_DP0/ ADC1_DP0/ ADC1_DP0/ ADC0_DP3 ADC0_DP3 ADC0_DP3 L2 21 PGA1_DM/ PGA1_DM/ PGA1_DM/ ADC1_DM0/ ADC1_DM0/ ADC1_DM0/ ADC0_DM3 ADC0_DM3 ADC0_DM3 F5 22 VDDA VDDA VDDA G5 23 VREFH VREFH VREFH G6 24 VREFL VREFL VREFL F6 25 VSSA VSSA VSSA L3 26 VREF_OUT/ VREF_OUT/ VREF_OUT/ CMP1_IN5/ CMP1_IN5/ CMP1_IN5/ CMP0_IN5/ CMP0_IN5/ CMP0_IN5/ ADC1_SE18 ADC1_SE18 ADC1_SE18 K5 27 DAC0_OUT/ DAC0_OUT/ DAC0_OUT/ CMP1_IN3/ CMP1_IN3/ CMP1_IN3/ ADC0_SE23 ADC0_SE23 ADC0_SE23 L7 — RTC_ RTC_ RTC_ WAKEUP_B WAKEUP_B WAKEUP_B L4 28 XTAL32 XTAL32 XTAL32 L5 29 EXTAL32 EXTAL32 EXTAL32 K6 30 VBAT VBAT VBAT H5 31 PTE24 ADC0_SE17 ADC0_SE17 PTE24 UART4_TX EWM_OUT_b J5 32 PTE25 ADC0_SE18 ADC0_SE18 PTE25 UART4_RX EWM_IN H6 33 PTE26 DISABLED PTE26 UART4_CTS_ RTC_CLKOUT b J6 34 PTA0 JTAG_TCLK/ TSI0_CH1 PTA0 UART0_CTS_ FTM0_CH5 JTAG_TCLK/ EZP_CLK SWD_CLK/ b/ SWD_CLK EZP_CLK UART0_COL_ b H8 35 PTA1 JTAG_TDI/ TSI0_CH2 PTA1 UART0_RX FTM0_CH6 JTAG_TDI EZP_DI EZP_DI J7 36 PTA2 JTAG_TDO/ TSI0_CH3 PTA2 UART0_TX FTM0_CH7 JTAG_TDO/ EZP_DO TRACE_SWO/ TRACE_SWO EZP_DO H9 37 PTA3 JTAG_TMS/ TSI0_CH4 PTA3 UART0_RTS_ FTM0_CH0 JTAG_TMS/ SWD_DIO b SWD_DIO J8 38 PTA4/ NMI_b/ TSI0_CH5 PTA4/ FTM0_CH1 NMI_b EZP_CS_b LLWU_P3 EZP_CS_b LLWU_P3 K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 64 Freescale Semiconductor, Inc.

Pinout 121 100 Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EzPort MAP LQFP BGA K7 39 PTA5 DISABLED PTA5 FTM0_CH2 CMP2_OUT I2S0_TX_ JTAG_TRST_ BCLK b E5 40 VDD VDD VDD G3 41 VSS VSS VSS K8 42 PTA12 CMP2_IN0 CMP2_IN0 PTA12 CAN0_TX FTM1_CH0 I2S0_TXD0 FTM1_QD_ PHA L8 43 PTA13/ CMP2_IN1 CMP2_IN1 PTA13/ CAN0_RX FTM1_CH1 I2S0_TX_FS FTM1_QD_ LLWU_P4 LLWU_P4 PHB K9 44 PTA14 DISABLED PTA14 SPI0_PCS0 UART0_TX I2S0_RX_ I2S0_TXD1 BCLK L9 45 PTA15 DISABLED PTA15 SPI0_SCK UART0_RX I2S0_RXD0 J10 46 PTA16 DISABLED PTA16 SPI0_SOUT UART0_CTS_ I2S0_RX_FS I2S0_RXD1 b/ UART0_COL_ b H10 47 PTA17 ADC1_SE17 ADC1_SE17 PTA17 SPI0_SIN UART0_RTS_ I2S0_MCLK b L10 48 VDD VDD VDD K10 49 VSS VSS VSS L11 50 PTA18 EXTAL0 EXTAL0 PTA18 FTM0_FLT2 FTM_CLKIN0 K11 51 PTA19 XTAL0 XTAL0 PTA19 FTM1_FLT0 FTM_CLKIN1 LPTMR0_ ALT1 J11 52 RESET_b RESET_b RESET_b G11 53 PTB0/ ADC0_SE8/ ADC0_SE8/ PTB0/ I2C0_SCL FTM1_CH0 FTM1_QD_ LLWU_P5 ADC1_SE8/ ADC1_SE8/ LLWU_P5 PHA TSI0_CH0 TSI0_CH0 G10 54 PTB1 ADC0_SE9/ ADC0_SE9/ PTB1 I2C0_SDA FTM1_CH1 FTM1_QD_ ADC1_SE9/ ADC1_SE9/ PHB TSI0_CH6 TSI0_CH6 G9 55 PTB2 ADC0_SE12/ ADC0_SE12/ PTB2 I2C0_SCL UART0_RTS_ FTM0_FLT3 TSI0_CH7 TSI0_CH7 b G8 56 PTB3 ADC0_SE13/ ADC0_SE13/ PTB3 I2C0_SDA UART0_CTS_ FTM0_FLT0 TSI0_CH8 TSI0_CH8 b/ UART0_COL_ b F11 — PTB6 ADC1_SE12 ADC1_SE12 PTB6 FB_AD23 E11 — PTB7 ADC1_SE13 ADC1_SE13 PTB7 FB_AD22 D11 — PTB8 DISABLED PTB8 UART3_RTS_ FB_AD21 b E10 57 PTB9 DISABLED PTB9 SPI1_PCS1 UART3_CTS_ FB_AD20 b D10 58 PTB10 ADC1_SE14 ADC1_SE14 PTB10 SPI1_PCS0 UART3_RX FB_AD19 FTM0_FLT1 C10 59 PTB11 ADC1_SE15 ADC1_SE15 PTB11 SPI1_SCK UART3_TX FB_AD18 FTM0_FLT2 — 60 VSS VSS VSS — 61 VDD VDD VDD B10 62 PTB16 TSI0_CH9 TSI0_CH9 PTB16 SPI1_SOUT UART0_RX FB_AD17 EWM_IN K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 65

Pinout 121 100 Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EzPort MAP LQFP BGA E9 63 PTB17 TSI0_CH10 TSI0_CH10 PTB17 SPI1_SIN UART0_TX FB_AD16 EWM_OUT_b D9 64 PTB18 TSI0_CH11 TSI0_CH11 PTB18 CAN0_TX FTM2_CH0 I2S0_TX_ FB_AD15 FTM2_QD_ BCLK PHA C9 65 PTB19 TSI0_CH12 TSI0_CH12 PTB19 CAN0_RX FTM2_CH1 I2S0_TX_FS FB_OE_b FTM2_QD_ PHB F10 66 PTB20 DISABLED PTB20 FB_AD31 CMP0_OUT F9 67 PTB21 DISABLED PTB21 FB_AD30 CMP1_OUT F8 68 PTB22 DISABLED PTB22 FB_AD29 CMP2_OUT E8 69 PTB23 DISABLED PTB23 SPI0_PCS5 FB_AD28 B9 70 PTC0 ADC0_SE14/ ADC0_SE14/ PTC0 SPI0_PCS4 PDB0_EXTRG FB_AD14 I2S0_TXD1 TSI0_CH13 TSI0_CH13 D8 71 PTC1/ ADC0_SE15/ ADC0_SE15/ PTC1/ SPI0_PCS3 UART1_RTS_ FTM0_CH0 FB_AD13 I2S0_TXD0 LLWU_P6 TSI0_CH14 TSI0_CH14 LLWU_P6 b C8 72 PTC2 ADC0_SE4b/ ADC0_SE4b/ PTC2 SPI0_PCS2 UART1_CTS_ FTM0_CH1 FB_AD12 I2S0_TX_FS CMP1_IN0/ CMP1_IN0/ b TSI0_CH15 TSI0_CH15 B8 73 PTC3/ CMP1_IN1 CMP1_IN1 PTC3/ SPI0_PCS1 UART1_RX FTM0_CH2 CLKOUT I2S0_TX_ LLWU_P7 LLWU_P7 BCLK — 74 VSS VSS VSS — 75 VDD VDD VDD A8 76 PTC4/ DISABLED PTC4/ SPI0_PCS0 UART1_TX FTM0_CH3 FB_AD11 CMP1_OUT LLWU_P8 LLWU_P8 D7 77 PTC5/ DISABLED PTC5/ SPI0_SCK LPTMR0_ I2S0_RXD0 FB_AD10 CMP0_OUT LLWU_P9 LLWU_P9 ALT2 C7 78 PTC6/ CMP0_IN0 CMP0_IN0 PTC6/ SPI0_SOUT PDB0_EXTRG I2S0_RX_ FB_AD9 I2S0_MCLK LLWU_P10 LLWU_P10 BCLK B7 79 PTC7 CMP0_IN1 CMP0_IN1 PTC7 SPI0_SIN I2S0_RX_FS FB_AD8 A7 80 PTC8 ADC1_SE4b/ ADC1_SE4b/ PTC8 I2S0_MCLK FB_AD7 CMP0_IN2 CMP0_IN2 D6 81 PTC9 ADC1_SE5b/ ADC1_SE5b/ PTC9 I2S0_RX_ FB_AD6 FTM2_FLT0 CMP0_IN3 CMP0_IN3 BCLK C6 82 PTC10 ADC1_SE6b ADC1_SE6b PTC10 I2C1_SCL I2S0_RX_FS FB_AD5 C5 83 PTC11/ ADC1_SE7b ADC1_SE7b PTC11/ I2C1_SDA I2S0_RXD1 FB_RW_b LLWU_P11 LLWU_P11 B6 84 PTC12 DISABLED PTC12 UART4_RTS_ FB_AD27 b A6 85 PTC13 DISABLED PTC13 UART4_CTS_ FB_AD26 b A5 86 PTC14 DISABLED PTC14 UART4_RX FB_AD25 B5 87 PTC15 DISABLED PTC15 UART4_TX FB_AD24 — 88 VSS VSS VSS — 89 VDD VDD VDD D5 90 PTC16 DISABLED PTC16 UART3_RX FB_CS5_b/ FB_TSIZ1/ FB_BE23_16_ b K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 66 Freescale Semiconductor, Inc.

Pinout 121 100 Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EzPort MAP LQFP BGA C4 91 PTC17 DISABLED PTC17 UART3_TX FB_CS4_b/ FB_TSIZ0/ FB_BE31_24_ b B4 92 PTC18 DISABLED PTC18 UART3_RTS_ FB_TBST_b/ b FB_CS2_b/ FB_BE15_8_b A4 — PTC19 DISABLED PTC19 UART3_CTS_ FB_CS3_b/ FB_TA_b b FB_BE7_0_b D4 93 PTD0/ DISABLED PTD0/ SPI0_PCS0 UART2_RTS_ FB_ALE/ LLWU_P12 LLWU_P12 b FB_CS1_b/ FB_TS_b D3 94 PTD1 ADC0_SE5b ADC0_SE5b PTD1 SPI0_SCK UART2_CTS_ FB_CS0_b b C3 95 PTD2/ DISABLED PTD2/ SPI0_SOUT UART2_RX FB_AD4 LLWU_P13 LLWU_P13 B3 96 PTD3 DISABLED PTD3 SPI0_SIN UART2_TX FB_AD3 A3 97 PTD4/ DISABLED PTD4/ SPI0_PCS1 UART0_RTS_ FTM0_CH4 FB_AD2 EWM_IN LLWU_P14 LLWU_P14 b A2 98 PTD5 ADC0_SE6b ADC0_SE6b PTD5 SPI0_PCS2 UART0_CTS_ FTM0_CH5 FB_AD1 EWM_OUT_b b/ UART0_COL_ b B2 99 PTD6/ ADC0_SE7b ADC0_SE7b PTD6/ SPI0_PCS3 UART0_RX FTM0_CH6 FB_AD0 FTM0_FLT0 LLWU_P15 LLWU_P15 A1 100 PTD7 DISABLED PTD7 CMT_IRO UART0_TX FTM0_CH7 FTM0_FLT1 A11 — NC NC NC B11 — NC NC NC C11 — NC NC NC K3 — NC NC NC H4 — NC NC NC J3 — NC NC NC H3 — NC NC NC K4 — NC NC NC J9 — NC NC NC J4 — NC NC NC H11 — NC NC NC A10 — NC NC NC A9 — NC NC NC B1 — NC NC NC C2 — NC NC NC C1 — NC NC NC D2 — NC NC NC D1 — NC NC NC E1 — NC NC NC K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 67

Pinout 8.2 K10 Pinouts The below figure shows the pinout diagram for the devices supported by this document. Many signals may be multiplexed onto a single pin. To determine what signals can be used on which pin, see the previous section. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 68 Freescale Semiconductor, Inc.

Pinout 1 5 4 3 2 1 0 1 1 1 1 P 1 9 8 P P P P _ P P P _ _ _ _ U _ _ _ U U U U W U U U W W W W L W W W L L L L L L L L D7 D6/L D5 D4/L D3 D2/L D1 D0/L C18 C17 C16 D S C15 C14 C13 C12 C11/ C10 C9 C8 C7 C6/L C5/L C4/L T T T T T T T T T T T D S T T T T T T T T T T T T P P P P P P P P P P P V V P P P P P P P P P P P P 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 PTE0 1 75 VDD PTE1/LLWU_P0 2 74 VSS PTE2/LLWU_P1 3 73 PTC3/LLWU_P7 PTE3 4 72 PTC2 PTE4/LLWU_P2 5 71 PTC1/LLWU_P6 PTE5 6 70 PTC0 PTE6 7 69 PTB23 VDD 8 68 PTB22 VSS 9 67 PTB21 PTE16 10 66 PTB20 PTE17 11 65 PTB19 PTE18 12 64 PTB18 PTE19 13 63 PTB17 ADC0_DP1 14 62 PTB16 ADC0_DM1 15 61 VDD ADC1_DP1 16 60 VSS ADC1_DM1 17 59 PTB11 PGA0_DP/ADC0_DP0/ADC1_DP3 18 58 PTB10 PGA0_DM/ADC0_DM0/ADC1_DM3 19 57 PTB9 PGA1_DP/ADC1_DP0/ADC0_DP3 20 56 PTB3 PGA1_DM/ADC1_DM0/ADC0_DM3 21 55 PTB2 VDDA 22 54 PTB1 VREFH 23 53 PTB0/LLWU_P5 VREFL 24 52 RESET_b VSSA 25 51 PTA19 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 8 3 2 2 T 4 5 6 0 1 2 3 3 5 D S 2 4 4 5 6 7 D S 8 N5/ADC1_SE1 N3/ADC0_SE2 XTAL3 EXTAL3 VBA PTE2 PTE2 PTE2 PTA PTA PTA PTA PTA4/LLWU_P PTA VD VS PTA1 TA13/LLWU_P PTA1 PTA1 PTA1 PTA1 VD VS PTA1 _I _I P 0 1 P P M M C C 5/ T/ N U _I O 1 _ P 0 M C T/C DA U O _ F E R V Figure 29. K10 100 LQFP Pinout Diagram K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 69

Revision History 1 2 3 4 5 6 7 8 9 10 11 PTD4/ PTC4/ A PTD7 PTD5 PTC19 PTC14 PTC13 PTC8 NC NC NC A LLWU_P14 LLWU_P8 PTD6/ PTC3/ B NC PTD3 PTC18 PTC15 PTC12 PTC7 PTC0 PTB16 NC B LLWU_P15 LLWU_P7 PTD2/ PTC11/ PTC6/ C NC NC PTC17 PTC10 PTC2 PTB19 PTB11 NC C LLWU_P13 LLWU_P11 LLWU_P10 PTD0/ PTC5/ PTC1/ D NC NC PTD1 PTC16 PTC9 PTB18 PTB10 PTB8 D LLWU_P12 LLWU_P9 LLWU_P6 PTE2/ PTE1/ E NC PTE0 VDD VDD VDD PTB23 PTB17 PTB9 PTB7 E LLWU_P1 LLWU_P0 F PTE16 PTE17 PTE6 PTE3 VDDA VSSA VSS PTB22 PTB21 PTB20 PTB6 F PTB0/ G PTE18 PTE19 VSS P T E 5 V R E F H V R E FL V S S PTB3 PTB2 PTB1 G LLWU_P5 PTE4/ H ADC0_DP1ADC0_DM1 NC NC PTE24 PTE26 PTA1 PTA3 PTA17 NC H LLWU_P2 PTA4/ J A D C 1 _ D P 1 A D C 1 _ D M 1 N C NC PTE25 PTA0 PTA2 NC PTA16 RESET_b J LLWU_P3 PGA0_DP/ PGA0_DM/ DAC0_OUT/ K ADC0_DP0/ADC0_DM0/ NC NC CMP1_IN3/ VBAT PTA5 PTA12 PTA14 VSS PTA19 K ADC1_DP3ADC1_DM3 ADC0_SE23 VREF_OUT/ PGA1_DP/ PGA1_DM/ CMP1_IN5/ RTC_ PTA13/ L ADC1_DP0/ADC1_DM0/ XTAL32 EXTAL32 VSS PTA15 VDD PTA18 L CMP0_IN5/ WAKEUP_B LLWU_P4 ADC0_DP3ADC0_DM3 ADC1_SE18 1 2 3 4 5 6 7 8 9 10 11 Figure 30. K10 121 MAPBGA Pinout Diagram 9 Revision History The following table provides a revision history for this document. Table 46. Revision History Rev. No. Date Substantial Changes 1 3/2012 Initial public release Table continues on the next page... K10 Sub-Family Data Sheet, Rev. 3, 11/2012. 70 Freescale Semiconductor, Inc.

Revision History Table 46. Revision History (continued) Rev. No. Date Substantial Changes 2 4/2012 • Replaced TBDs throughout. • Updated "Power consumption operating behaviors" table. • Updated "ADC electrical specifications" section. • Updated "VREF full-range operating behaviors" table. • Updated "I2S/SAI Switching Specifications" section. • Updated "TSI electrical specifications" table. 3 11/2012 • Updated orderable part numbers. • Updated the maximum input voltage (V ) specification in the "16-bit ADC operating ADIN conditions" section. K10 Sub-Family Data Sheet, Rev. 3, 11/2012. Freescale Semiconductor, Inc. 71

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