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  • 型号: MBR3100RLG
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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MBR3100RLG产品简介:

ICGOO电子元器件商城为您提供MBR3100RLG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MBR3100RLG价格参考¥2.85-¥2.85。ON SemiconductorMBR3100RLG封装/规格:二极管 - 整流器 - 单, 肖特基 通孔 二极管 100V 3A DO-201AD。您可以下载MBR3100RLG参考资料、Datasheet数据手册功能说明书,资料中有MBR3100RLG 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 100V 3A DO201AD肖特基二极管与整流器 3A 100V

产品分类

单二极管/整流器分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,ON Semiconductor MBR3100RLG-

数据手册

点击此处下载产品Datasheet

产品型号

MBR3100RLG

不同If时的电压-正向(Vf)

790mV @ 3A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

600µA @ 100V

二极管类型

肖特基

产品

Schottky Diodes

产品目录页面

点击此处下载产品Datasheet

产品种类

肖特基二极管与整流器

供应商器件封装

DO-201AD

其它名称

MBR3100RLGOSCT

包装

剪切带 (CT)

反向恢复时间(trr)

-

商标

ON Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Reel

封装/外壳

DO-201AA,DO-27,轴向

封装/箱体

DO-201AD

峰值反向电压

100 V

工作温度-结

-65°C ~ 175°C

工作温度范围

- 65 C to + 175 C

工厂包装数量

1500

技术

Silicon

最大反向漏泄电流

20000 uA

最大工作温度

+ 175 C

最大浪涌电流

150 A

最小工作温度

- 65 C

标准包装

1

正向电压下降

0.79 V

正向连续电流

3 A

热阻

28°C/W Ja

电压-DC反向(Vr)(最大值)

100V

电流-平均整流(Io)

3A

系列

MBR3100

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Single

零件号别名

MBR3100G

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PDF Datasheet 数据手册内容提取

MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity http://onsemi.com protection diodes. Features SCHOTTKY BARRIER • Low Reverse Current RECTIFIER • Low Stored Charge, Majority Carrier Conduction 3.0 AMPERES, 100 VOLTS • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • High Surge Capacity • AXIAL LEAD Pb−Free Packages are Available* CASE 267−05 (DO−201AD) Mechanical Characteristics: STYLE 1 • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable MARKING DIAGRAM • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • A Polarity: Cathode indicated by Polarity Band MBR 3100 YYWW(cid:2) MAXIMUM RATINGS (cid:2) Rating Symbol Max Unit Peak Repetitive Reverse Voltage VRRM 100 V A = Assembly Location Working Peak Reverse Voltage VRWM YY = Year DC Blocking Voltage VR WW = Work Week (cid:2) = Pb−Free Package Average Rectified Forward Current TA = 100°C IO 3.0 A (Note: Microdot may be in either location) (R(cid:2)JA = 28°C/W, Refer to P.C. Board Mounting, Note 3) ORDERING INFORMATION Non−Repetitive Peak Surge Current IFSM 150 A (Surge Applied at Rated Load Conditions Device Package Shipping† Halfwave, Single Phase, 60 Hz) MBR3100 Axial Lead 500 Units / Bag Operating and Storage Junction Temperature TJ, Tstg −65 to °C Range (Note 1) (Reverse Voltage Applied) +175 MBR3100G Axial Lead 500 Units / Bag (Pb−Free) Voltage Rate of Change (Rated VR) dv/dt 10 V/ns MBR3100RL Axial Lead 1500/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended MBR3100RLG Axial Lead 1500/Tape & Reel Operating Conditions is not implied. Extended exposure to stresses above the (Pb−Free) Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from †For information on tape and reel specifications, Junction−to−Ambient: dPD/dTJ < 1/R(cid:2)JA. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: June, 2006 − Rev. 6 MBR3100/D

MBR3100 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3) R(cid:2)JA 28 °C/W ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 2) vF V (iF = 3.0 Amps, TL = 25°C) 0.79 (iF = 3.0 Amps, TL = 100°C) 0.69 Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) iR mA TL = 25°C 0.6 TL = 100°C 20 2. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle =2.0%. S) MP 50 1 ORWARD CURRENT (A 321532000 TJ = 11025050°°°CCC E CURRENT (mA) 000...000000...152152 TJ 11=02 1055°°CC0°C F 1 S OUS 0.5 EVER 00..000025 ANTANE 00..23 I , RR0.00.000051 NST 0.1 0.0002 25°C i , IF0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.00010 10 20 30 40 50 60 70 80 90 100 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* Figure 1. Typical Forward Voltage *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. MPS) 8 TTS) 4 RENT (A 67 ON (WA 3.5 R TI 3 RWARD CU 45 SQUARE dc ER DISSIPA 2.25 SQWUAAVREE dc E FO 3 WAVE POW 1.5 G E A G R 2 A E R 1 I , AVF (AV) 01 20 40 60 80 100 120 140 160 180 P , AVEF (AV) 0.5 0 1.0 2.0 3.0 4.0 5.0 T , AMBIENT TEMPERATURE (°C) A IF (AV), AVERAGE FORWARD CURRENT (AMPS) Figure 3. Current Derating Figure 4. Power Dissipation (Mounting Method #3 per Note 3) http://onsemi.com 2

MBR3100 400 300 F) 200 p E ( C N A T CI PA 100 TJ = 25°C CA f = 1 MHz C, 80 50 40 0 20 40 60 80 V , REVERSE VOLTAGE (VOLTS) R Figure 5. Typical Capacitance NOTE 3 — MOUNTING DATA Data shown for thermal resistance junction−to−ambient (R(cid:2)JA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR R(cid:2)JA IN STILL AIR Lead Length, L (in) Mounting Method 1/8 1/4 1/2 3/4 R(cid:2)JA 1 50 51 53 55 °C/W 2 58 59 61 63 °C/W 3 28 °C/W Mounting Method 1 Mounting Method 2 P.C. Board where available Vector Push−In copper surface is small. Terminals T−28 L L ÉÉÉÉLÉÉÉÉÉLÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉ Mounting Method 3 P.C. Board with 2−1/2″ X 2−1/2″ copper surface. ÉÉ L = 1/2’’ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ Board Ground Plane ÉÉ http://onsemi.com 3

MBR3100 PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 ISSUE G NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI K A Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D 3. 267−04 OBSOLETE, NEW STANDARD 267−05. 1 2 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.287 0.374 7.30 9.50 B B 0.189 0.209 4.80 5.30 K D 0.047 0.051 1.20 1.30 K 1.000 −−− 25.40 −−− STYLE 1: PIN 1.CATHODE (POLARITY BAND) 2.ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com MBR3100/D 4

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