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  • 型号: M74VHC1GT04DFT2G
  • 制造商: ON Semiconductor
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M74VHC1GT04DFT2G产品简介:

ICGOO电子元器件商城为您提供M74VHC1GT04DFT2G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 M74VHC1GT04DFT2G价格参考¥询价-¥询价。ON SemiconductorM74VHC1GT04DFT2G封装/规格:逻辑 - 栅极和逆变器, Inverter IC 1 Channel SC-88A (SC-70-5/SOT-353)。您可以下载M74VHC1GT04DFT2G参考资料、Datasheet数据手册功能说明书,资料中有M74VHC1GT04DFT2G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC GATE INVERTER SNGL 1IN SOT353变换器 3-5.5V Single TTL

产品分类

逻辑 - 栅极和逆变器

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

逻辑集成电路,变换器,ON Semiconductor M74VHC1GT04DFT2G74VHC

数据手册

点击此处下载产品Datasheet

产品型号

M74VHC1GT04DFT2G

PCN设计/规格

点击此处下载产品Datasheet

不同V、最大CL时的最大传播延迟

7.7ns @ 5V,50pF

产品种类

变换器

低电平输出电流

8 mA

供应商器件封装

SC-70

其它名称

M74VHC1GT04DFT2GOSCT

包装

剪切带 (CT)

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

6-TSSOP(5 引线),SC-88A,SOT-353

封装/箱体

SC-70-5

工作温度

-55°C ~ 125°C

工厂包装数量

3000

最大工作温度

+ 125 C

标准包装

1

特性

-

电压-电源

3 V ~ 5.5 V

电流-输出高,低

8mA,8mA

电流-静态(最大值)

1µA

电源电压-最大

5.5 V

电源电压-最小

3 V

电路数

1

电路数量

1 Circuit

系列

MC74VHC1GT04

输入数

1

逻辑电平-低

0.53 V ~ 0.8 V

逻辑电平-高

1.4 V ~ 2 V

逻辑类型

CMOS

逻辑系列

74VHC

零件号别名

M74VHC1GT04DFT1G

高电平输出电流

- 8 mA

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PDF Datasheet 数据手册内容提取

MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter LSTTL−Compatible Inputs The MC74VHC1GT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation www.onsemi.com similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. MARKING The internal circuit is composed of three stages, including a buffer DIAGRAMS output which provides high noise immunity and stable output. The device input is compatible with TTL−type input thresholds and the output has a full 5 V CMOS level output swing. The input protection 5 SC−88A circuitry on this device allows overvoltage tolerance on the input, 5 DF SUFFIX M VK M(cid:2) allowing the device to be used as a logic−level translator from 3 V CASE 419A (cid:2) 1 CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V 1 CMOS Logic while operating at the high−voltage power supply. The MC74VHC1GT04 input structure provides protection when 5 voltages up to 7.0 V are applied, regardless of the supply voltage. This TSOP−5 allows the MC74VHC1GT04 to be used to interface 5 V circuits to 5 DT SUFFIX VK M (cid:2) (cid:2) 3 V circuits. The output structures also provide protection CASE 483 1 1 when V = 0 V. These input and output structures help prevent CC device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. VK = Device Code M = Date Code* Features (cid:2) = Pb−Free Package • High Speed: t = 3.8 ns (Typ) at V = 5 V (Note: Microdot may be in either location) PD CC • Low Power Dissipation: I = 1 (cid:2)A (Max) at T = 25°C *Date Code orientation and/or position may vary CC A depending upon manufacturing location. • TTL−Compatible Inputs: V = 0.8 V; V = 2 V IL IH • CMOS−Compatible Outputs: V > 0.8 V ; V < 0.1 V @ Load OH CC OL CC • Power Down Protection Provided on Inputs and Outputs PIN ASSIGNMENT • Balanced Propagation Delays 1 NC • Pin and Function Compatible with Other Standard Logic Families 2 IN A • 3 GND Chip Complexity: FETs = 105; Equivalent Gates = 26 • NLV Prefix for Automotive and Other Applications Requiring 4 OUT Y Unique Site and Control Change Requirements; AEC−Q100 5 VCC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant FUNCTION TABLE A Input Y Output NC 1 5 VCC L H H L IN A 2 GND 3 4 OUT Y ORDERING INFORMATION Figure 1. Pinout (Top View) See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1 IN A OUT Y Figure 2. Logic Symbol © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 − Rev. 18 MC74VHC1GT04/D

MC74VHC1GT04 MAXIMUM RATINGS Symbol Characteristics Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V VOUT DC Output Voltage VCC = 0 −0.5 to 7.0 V High or Low State −0.5 to VCC + 0.5 IIK Input Diode Current −20 mA IOK Output Diode Current VOUT < GND; VOUT > VCC +20 mA IOUT DC Output Current, per Pin +25 mA ICC DC Supply Current, VCC and GND +50 mA PD Power dissipation in still air SC−88A, TSOP−5 200 mW (cid:3)JA Thermal resistance SC−88A, TSOP−5 333 (cid:3)C/W TL Lead temperature, 1 mm from case for 10 s 260 °C TJ Junction temperature under bias +150 °C Tstg Storage temperature −65 to +150 °C VESD ESD Withstand Voltage Human Body Model (Note 1) 2000 V Machine Model (Note 2) 200 Charged Device Model (Note 3) N/A ILatchup Latchup Performance Above VCC and Below GND at 125°C (Note 4) ±100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 3.0 5.5 V VIN DC Input Voltage 0.0 5.5 V VOUT DC Output Voltage VCC = 0 0.0 5.5 V High or Low State 0.0 VCC TA Operating Temperature Range −55 +125 °C tr , tf Input Rise and Fall Time VCC = 3.3 V ± 0.3 V 0 100 ns/V VCC = 5.0 V ± 0.5 V 0 20 Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES Junction E FAILURE RATE OF PLASTIC = CERAMIC T Temperature °C Time, Hours Time, Years RA UNTIL INTERMETALLICS OCCUR E 8900 14,01392,3,20000 14177..98 D FAILUR °= 130C °= 120C °= 110C °= 100C °= 90C °= 80C 100 178,700 20.4 ZE TJ TJ TJ TJ TJ TJ LI 110 79,600 9.4 MA 1 R O 120 37,000 4.2 N 1 10 100 1000 130 17,800 2.0 TIME, YEARS 140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature www.onsemi.com 2

MC74VHC1GT04 DC ELECTRICAL CHARACTERISTICS TA = 25°C TA ≤ 85°C −55 ≤ TA ≤ 125°C VCC Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit VIH Minimum High−Level 3.0 1.4 1.4 1.4 V Input Voltage 4.5 2.0 2.0 2.0 5.5 2.0 2.0 2.0 VIL Maximum Low−Level 3.0 0.53 0.53 0.53 V Input Voltage 4.5 0.8 0.8 0.8 5.5 0.8 0.8 0.8 VOH Minimum High−Level VIN = VIH or VIL 3.0 2.9 3.0 2.9 2.9 V Output Voltage IOH = −50 (cid:2)A 4.5 4.4 4.5 4.4 4.4 VIN = VIH or VIL VIN = VIH or VIL V IOH = −4 mA 3.0 2.58 2.48 2.34 IOH = −8 mA 4.5 3.94 3.80 3.66 VOL Maximum Low−Level VIN = VIH or VIL 3.0 0.0 0.1 0.1 0.1 V Output Voltage IOL = 50 (cid:2)A 4.5 0.0 0.1 0.1 0.1 VIN = VIH or VIL VIN = VIH or VIL V IOL = 4.0 mA 3.0 0.36 0.44 0.52 IOL = 8.0 mA 4.5 0.36 0.44 0.52 IIN Maximum Input VIN = 5.5 V or GND 0 to ±0.1 ±1.0 ±1.0 (cid:2)A Leakage Current 5.5 ICC Maximum Quiescent VIN = VCC or GND 5.5 1.0 20 40 (cid:2)A Supply Current ICCT Quiescent Supply Input: VIN = 3.4 V 5.5 1.35 1.50 1.65 mA Current IOPD Output Leakage VOUT = 5.5 V 0.0 0.5 5.0 10 (cid:2)A Current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns TA = 25°C TA ≤ 85°C −55 ≤ TA ≤ 125°C Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit tPLH, Maximum Propagation VCC = 3.3 ± 0.3 V CL = 15 pF 5.0 10.0 11.0 13.0 ns tPHL Delay, Input A to Y CL = 50 pF 6.2 13.5 15.0 17.5 VCC = 5.0 ± 0.5 V CL = 15 pF 3.8 6.7 7.5 8.5 CL = 50 pF 4.2 7.7 8.5 9.5 CIN Maximum Input 5.0 10 10 10 pF Capacitance Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Note 5) 10 pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD (cid:2) VCC (cid:2) fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD (cid:2) VCC2 (cid:2) fin + ICC (cid:2) VCC. www.onsemi.com 3

MC74VHC1GT04 3.0 V A 50% GND tPLH tPHL VOH Y 50% VCC VOL Figure 4. Switching Waveforms TEST POINT OUTPUT DEVICE UNDER TEST CL* *Includes all probe and jig capacitance Figure 5. Test Circuit ORDERING INFORMATION Device Package Type Package† M74VHC1GT04DFT1G NLVVHC1GT04DFT1G* SC−88A M74VHC1GT04DFT2G (Pb−Free) NLVVHC1GT04DFT2G* 3000 / Tape & Reel M74VHC1GT04DFT3G M74VHC1GT04DTT1G TSOP−5 (Pb−Free) NLVVHC1GT04DTT1G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 4

MC74VHC1GT04 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING G PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE 5 4 MOLD FLASH, PROTRUSIONS, OR GATE BURRS. S −B− INCHES MILLIMETERS 1 2 3 DIM MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 D 5 PL 0.2 (0.008) M B M G 0.026 BSC 0.65 BSC H --- 0.004 --- 0.10 J 0.004 0.010 0.10 0.25 N K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20 J C K H SOLDER FOOTPRINT 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 (cid:2) (cid:3) 0.0748 mm SCALE 20:1 inches www.onsemi.com 5

MC74VHC1GT04 PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME NOTE 5 D5X Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 0.20 C A B 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH 2X 0.10 T THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. M 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD 2X 0.20 T B 5 4 S FFLLAASSHH,, PPRROOTTRRUUSSIIOONNSS,, OORR GGAATTEE BBUURRRRSS. SMHOALLDL NOT 1 2 3 EXCEED 0.15 PER SIDE. DIMENSION A. K 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL B G DETAIL Z TTRRIIMMMMEEDD LLEEAADD INSO ATL TLOO WEXETDE INND T HMIOS RLEO CTHATAINO N0..2 A A FROM BODY. MILLIMETERS TOP VIEW DIM MIN MAX A 2.85 3.15 B 1.35 1.65 DETAIL Z C 0.90 1.10 J D 0.25 0.50 C G 0.95 BSC H 0.01 0.10 0.05 J 0.10 0.26 H C SPELAATNIENG END VIEW MK 0.02 0(cid:3) 010.6 (cid:3) 0 SIDE VIEW S 2.50 3.00 SOLDERING FOOTPRINT* 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.7 (cid:2) (cid:3) 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com MC74VHC1GT04/D 6

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