LMV1032 www.ti.com SNAS233G–DECEMBER2003–REVISEDMAY2013 LMV1032-06/LMV1032-15/LMV1032-25 Amplifiers for 3-Wire Analog Electret Microphones CheckforSamples:LMV1032 FEATURES DESCRIPTION 1 • (TypicalLMV1032-15,1.7VSupply;Unless The LMV1032s are an audio amplifier series for small 2 form factor electret microphones. They are designed OtherwiseNoted) to replace the JFET preamp currently being used. • OutputVoltageNoise(A-weighted)−89dBV The LMV1032 series is ideal for extended battery life • LowSupplyCurrent60μA applications, such as a Bluetooth communication link. • SupplyVoltage1.7Vto5V The addition of a third pin to an electret microphones that incorporates an LMV1032 allows for a dramatic • PSRR70dB reduction in supply current as compared to the JFET • SignaltoNoiseRatio61dB equipped electret microphone. Microphone supply • InputCapacitance2pF current is thus reduced to 60 µA, assuring longer battery life. The LMV1032 series is specified for • InputImpedance>100MΩ supply voltages from 1.7V to 5V, and has fixed • OutputImpedance<200Ω voltagegainsof6dB,15dBand25dB. • MaxInputSignal170mV PP The LMV1032 series offers low output impedance • TemperatureRange−40°Cto85°C over the voice bandwidth, excellent power supply • LargeDome4-BumpDSBGAPackagewith rejection(PSRR),andstabilityovertemperature. ImprovedAdhesionTechnology. The devices are offered in space saving 4-bump ultra thin DSBGA lead free packages and are thus ideally APPLICATIONS suited for the form factor of miniature electret microphone packages. These extremely miniature • MobileCommunications-Bluetooth packages have the Large Dome Bump (LDB) • AutomotiveAccessories technology. This DSBGA technology is designed for • CellularPhones microphonePCBsrequiring1kgadhesioncriteria. • PDAs • AccessoryMicrophoneProducts Block Diagram Electret Microphone DIAPHRAGM VDD x x AIRGAP ELECTRET BACKPLATE VIN VOUT CONNECTOR 1x GAIN xxx xxxxxLMV1032 IC VDC VCC xxxxx VOUT GND GND Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. Alltrademarksarethepropertyoftheirrespectiveowners. 2 PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2003–2013,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

LMV1032 SNAS233G–DECEMBER2003–REVISEDMAY2013 www.ti.com Absolute Maximum Ratings(1)(2) ESDTolerance(3) HumanBodyModel 2500V MachineModel 250V SupplyVoltage V -GND 5.5V DD StorageTemperatureRange −65°Cto150°C JunctionTemperature(4) 150°Cmax MountingTemperature InfraredorConvection(20sec.) 235°C (1) AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobefunctional,butspecificperformanceisnotensured.Forensuredspecificationsandthetest conditions,seetheElectricalCharacteristics. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexasInstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) TheHumanBodyModel(HBM)is1.5kΩinserieswith100pF.TheMachineModelis0Ωinserieswith200pF. (4) ThemaximumpowerdissipationisafunctionofT ,θ andT .Themaximumallowablepowerdissipationatanyambient J(MAX) JA A temperatureisP =(T -T )/θ .AllnumbersapplyforpackagessoldereddirectlyontoaPCboard. D J(MAX) A JA Operating Ratings(1) SupplyVoltage 1.7Vto5V TemperatureRange −40°Cto+85°C (1) AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobefunctional,butspecificperformanceisnotensured.Forensuredspecificationsandthetest conditions,seetheElectricalCharacteristics. 1.7V and 5V Electrical Characteristics(1) Unlessotherwisespecified,alllimitsensuredforT =25°CandV =1.7Vand5V.Boldfacelimitsapplyatthetemperature J DD extremes. Symbol Parameter Conditions Min(2) Typ(3) Max(2) Units I SupplyCurrent V =GND 60 85 DD IN μA 100 SNR SignaltoNoiseRatio V =1.7V LMV1032-06 58 DD V =18mV IN PP LMV1032-15 61 f=1kHz LMV1032-25 61 dB V =5V LMV1032-06 59 DD V =18mV IN PP LMV1036-15 61 f=1kHz LMV1032-25 62 PSRR PowerSupplyRejectionRatio 1.7V<V <5V LMV1032-06 65 75 DD 60 LMV1032-15 60 70 dB 55 LMV1032-25 55 65 50 V MaxInputSignal f=1kHzandTHD+N< LMV1032-06 300 IN 1% LMV1032-15 170 mV PP LMV1032-25 60 f Lower−3dBRollOffFrequency R =50Ω 70 LOW SOURCE Hz V =18mV IN PP f Upper−3dBRollOffFrequency R =50Ω LMV1032-06 120 HIGH SOURCE V =18mV kHz IN PP LMV1032-15 75 LMV1032-25 21 (1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery limitedself-heatingofthedevicesuchthatT =T .Nospecificationofparametricperformanceisindicatedintheelectricaltablesunder J A conditionsofinternalself-heatingwhereT >T . J A (2) Alllimitsarespecifiedbydesignorstatisticalanalysis. (3) Typicalvaluesrepresentthemostlikelyparametricnorm. 2 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:LMV1032

LMV1032 www.ti.com SNAS233G–DECEMBER2003–REVISEDMAY2013 1.7V and 5V Electrical Characteristics(1) (continued) Unlessotherwisespecified,alllimitsensuredforT =25°CandV =1.7Vand5V.Boldfacelimitsapplyatthetemperature J DD extremes. Symbol Parameter Conditions Min(2) Typ(3) Max(2) Units e OutputNoise A-Weighted LMV1032-06 −97 n LMV1032-15 −89 dBV LMV1032-25 −80 V OutputVoltage V =GND LMV1032-06 100 300 500 OUT IN LMV1032-15 250 500 750 mV LMV1032-25 300 600 1000 R OutputImpedance f=1kHz <200 Ω O I OutputCurrent V =1.7V,V =1.7V,Sinking 0.9 2.3 O DD OUT 0.5 V =1.7V,V =0V,Sourcing 0.3 0.64 DD OUT 0.2 mA V =5V,V =1.7V,Sinking 0.9 2.4 DD OUT 0.5 V =5V,V =0V,Sourcing 0.4 1.46 DD OUT 0.1 THD TotalHarmonicDistortion f=1kHz LMV1032-06 0.11 V =18mV IN PP LMV1032-15 0.13 % LMV1032-25 0.35 C InputCapacitance 2 pF IN Z InputImpedance >100 MΩ IN A Gain f=1kHz LMV1032-06 5.5 6.2 6.7 V V =18mV 4.5 7.7 IN PP LMV1032-15 14.8 15.4 16 dB 14 17 LMV1032-25 24.8 25.5 26.2 24 27 Connection Diagram LargeDome4-BumpDSBGA A2 B2 OUTPUT VCC X A1 B1 GND INPUT Figure1. TopView Note: • Pinnumbersarereferencedtopackagemarkingtextorientation. • The actual physical placement of the package marking will vary slightly from part to part. The package will designate the date code and will vary considerably. Package marking does not correlate to device type in any way. Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LMV1032

LMV1032 SNAS233G–DECEMBER2003–REVISEDMAY2013 www.ti.com Typical Performance Characteristics Unlessotherwisespecified,V =1.7V,singlesupply,T =25°C S A SupplyCurrentvs.SupplyVoltage(LMV1032-06) SupplyCurrentvs.SupplyVoltage(LMV1032-15) 75 70 85°C 85°C 70 65 )A )A P P ( T ( T NE 65 NE 60 RR 25°C RR 25°C U U C C Y 60 Y 55 L L PP -40°C PP -40°C U U S 55 S 50 50 45 1.5 2 2.5 3 3.5 4 4.5 5 5.5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure2. Figure3.' SupplyCurrentvs.SupplyVoltage(LMV1032-25) ClosedLoopGainandPhasevs.Frequency(LMV1032-06) 70 10.00 180 GAIN 5.00 135 85°C )A 65 0.00 90 P ( TNER 25°C )Bd -5.00 45 )(° E RUC Y 60 ( NIAG --1150..0000 PHASE -045 SAHP L P -40°C P U 55 -20.00 -90 S -25.00 -135 50 -30.00 -180 1.5 2 2.5 3 3.5 4 4.5 5 5.5 10 100 1k 10k 100k 1M SUPPLY VOLTAGE (V) FREQUENCY (Hz) Figure4. Figure5. ClosedLoopGainandPhasevs.Frequency(LMV1032-15) ClosedLoopGainandPhasevs.Frequency(LMV1032-25) 20 450 30 450 GAIN GAIN 25 15 400 400 20 10 350 15 350 )Bd( NIAG 05 PHASE 300 °)( ESAHP )Bd( NIAG 150 PHASE 300 °)( ESAHP 250 0 250 -5 -5 -10 200 200 -10 -15 150 -15 150 10 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure6. Figure7. 4 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:LMV1032

LMV1032 www.ti.com SNAS233G–DECEMBER2003–REVISEDMAY2013 Typical Performance Characteristics (continued) Unlessotherwisespecified,V =1.7V,singlesupply,T =25°C S A PowerSupplyRejectionRatiovs.Frequency(LMV1032-06) PowerSupplyRejectionRatiovs.Frequency(LMV1032-15) 120 120 100 100 80 80 )B )B d( R 60 d( R 60 R R S S P P 40 40 20 20 0 0 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure8.\ Figure9. PowerSupplyRejectionRatiovs.Frequency(LMV1032-25) TotalHarmonicDistortionvs.Frequency(LMV1032-06) 120 0.7 VIN = 18 mVPP 0.6 100 0.5 80 )B )% 0.4 d( R 60 ( N+ RS DH 0.3 P T 40 0.2 20 0.1 0 0.0 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure10. Figure11. TotalHarmonicDistortionvs.Frequency(LMV1032-15) TotalHarmonicDistortionvs.Frequency(LMV1032-25) 0.7 0.6 VIN = 18 mVPP VIN = 18 mVPP 0.6 0.5 0.5 0.4 )% )% ( N + 0.4 ( N+ 0.3 D 0.3 DH H T T 0.2 0.2 0.1 0.1 0.0 0.0 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure12. Figure13. Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LMV1032

LMV1032 SNAS233G–DECEMBER2003–REVISEDMAY2013 www.ti.com Typical Performance Characteristics (continued) Unlessotherwisespecified,V =1.7V,singlesupply,T =25°C S A TotalHarmonicDistortionvs.InputVoltage(LMV1032-06) TotalHarmonicDistortionvs.InputVoltage(LMV1032-15) 1.6 1.6 1.4 1.4 1.2 1.2 )% 1.0 )% 1.0 ( N+ 0.8 ( N+ 0.8 D D H H T 0.6 T 0.6 0.4 0.4 0.2 0.2 f = 1 kHz f = 1 kHz 0.0 0.0 0 50 100 150 200 250 300 350 400 0 50 100 150 200 INPUT VOLTAGE (mVPP) INPUT VOLTAGE (mVPP) Figure14. Figure15. TotalHarmonicDistortionvs.InputVoltage(LMV1032-25) OutputVoltageNoisevs.Frequency(LMV1032-06) 1.6 -100 -105 1.4 -110 1.2 Hz) -115 )%( N+D 01..80 E (dBV/ --112250 H S -130 T 0.6 OI N -135 0.4 -140 0.2 -145 f = 1 kHz 0.0 -150 0 20 40 60 80 10 100 1k 10k 100k INPUT VOLTAGE (mVPP) FREQUENCY (Hz) Figure16. Figure17. OutputVoltageNoisevs.Frequency(LMV1032-15) OutputVoltageNoisevs.Frequency(LMV1032-25) -80 -80 -90 -90 -100 -100 Hz) Hz) V/ -110 V/ -110 B B d d E ( -120 E ( -120 S S OI OI N N -130 -130 -140 -140 -150 -150 10 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure18. Figure19. 6 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:LMV1032

LMV1032 www.ti.com SNAS233G–DECEMBER2003–REVISEDMAY2013 APPLICATION SECTION LOW CURRENT The LMV1032 has a low supply current which allows for a longer battery life. The low supply current of 60µA makesthisamplifieroptimalformicrophoneapplicationswhichneedtobealwayson. BUILT-IN GAIN The LMV1032 is offered in the space saving small DSBGA package which fits perfectly into the metal can of a microphone.ThisallowstheLMV1032tobeplacedonthePCBinsidethemicrophone. The bottom side of the PCB has the pins that connect the supply voltage to the amplifier and make the output available.TheinputoftheamplifierisconnectedtothemicrophoneviathePCB. DIAPHRAGM x x AIRGAP ELECTRET BACKPLATE CONNECTOR xxx xxxxx LMV1032 IC VCC xxxxx VOUT GND Figure20. Built-inGain A-WEIGHTED FILTER Thehumanearhasafrequencyrangefrom20Hztoabout20kHz.Withinthisrangethesensitivityofthehuman ear is not equal for each frequency. To approach the hearing response weighting filters are introduced. One of thosefiltersistheA-weightedfilter. The A-weighted filter is usually used in signal-to-noise ratio measurements, where sound is compared to device noise.Itimprovesthecorrelationofthemeasureddatatothesignal-to-noiseratioperceivedbythehumanear. 10 0 -10 -20 V B -30 d -40 -50 -60 -70 10 100 1k 10k 100k FREQUENCY (Hz) Figure21. A-WeightedFilter Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LMV1032

LMV1032 SNAS233G–DECEMBER2003–REVISEDMAY2013 www.ti.com MEASURING NOISE AND SNR The overall noise of the LMV1032 is measured within the frequency band from 10 Hz to 22 kHz using an A- weightedfilter.TheinputoftheLMV1032isconnectedtogroundwitha5pFcapacitor. A-WEIGHTED FILTER 5pF Figure22. NoiseMeasurementSetup The signal-to-noise ratio (SNR) is measured with a 1 kHz input signal of 18 mV using an A-weighted filter. This PP representsasoundpressurelevelof94dBSPL.Noinputcapacitorisconnected. SOUND PRESSURE LEVEL Thevolumeofsoundappliedtoamicrophoneisusuallystatedasthepressurelevelwithrespecttothethreshold ofhearingofthehumanear.Thesoundpressurelevel(SPL)indecibelsisdefinedby: Soundpressurelevel(dB)=20logP /P m O Where, P isthemeasuredsoundpressure m P isthethresholdofhearing(20μPa) O In order to be able to calculate the resulting output voltage of the microphone for a given SPL, the sound pressure in dB SPL needs to be converted to the absolute sound pressure in dBPa. This is the sound pressure levelindecibelswhichisreferredtoas1Pascal(Pa). Theconversionisgivenby: dBPa=dBSPL+20*log20μPa dBPa=dBSPL-94dB Translation from absolute sound pressure level to a voltage is specified by the sensitivity of the microphone. A conventionalmicrophonehasasensitivityof−44dBV/Pa. ABSOLUTE SOUND PRESSURE [dBPa] SENSITIVITY -94dB [dBV/Pa] SOUND VOLTAGE PRESSURE [dBV] [dB SPL] Figure23. dBSPLtodBVConversion 8 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:LMV1032

LMV1032 www.ti.com SNAS233G–DECEMBER2003–REVISEDMAY2013 Example:Busytrafficis70dBSPL V =70−94−44= −68dBV OUT Thisisequivalentto1.13mV PP Since the LMV1032-15 has a gain of 5.6 (15 dB) over the JFET, the output voltage of the microphone is 6.35 mV .ByreplacingtheJFETwiththeLMV1032-15,thesensitivityofthemicrophoneis−29dBV/Pa(−44+15). PP LOW FREQUENCY CUT OFF FILTER To reduce noise on the output of the microphone a low cut filter has been implemented in the LMV1032. This filterreducestheeffectofwindandhandlingnoise. It's also helpful to reduce the proximity effect in directional microphones. This effect occurs when the sound source is very close to the microphone. The lower frequencies are amplified which gives a bass sound. This amplificationcancauseanoverload,whichresultsinadistortionofthesignal. 20 450 GAIN 15 400 10 350 )Bd( N 5 PHASE 300 °)( ESA IAG 0 HP 250 -5 -10 200 -15 150 10 100 1k 10k 100k 1M FREQUENCY (Hz) Figure24. Gainvs.Frequency The LMV1032 is optimized to be used in audio band applications. The LMV1032 provides a flat gain response withintheaudiobandandofferslinearityandexcellenttemperaturestability. ADVANTAGE OF THREE PINS The LMV1032 ECM solution has three pins instead of the two pins provided in the case of a JFET solution. The third pin provides the advantage of a low supply current, high PSRR and eliminates the need for additional components. Noise pick-up by a microphone in a cell phone is a well-known problem. A conventional JFET circuit is sensitive for noise pick-up because of its high output impedance. The output impedance is usually around 2.2 kΩ. By providing separate output and supply pins a much lower output impedance is achieved and therefore is less sensitivetonoisepick-up. RF noise is among other caused by non-linear behavior. The non-linear behavior of the amplifier at high frequencies, well above the usable bandwidth of the device, causes AM demodulation of high frequency signals. The AM modulation contained in such signals folds back into the audio band, thereby disturbing the intended microphone signal. The GSM signal of a cell phone is such an AM-modulated signal. The modulation frequency of216Hzanditsharmonicscanbeobservedintheaudioband.Thistypeofnoiseiscalledbumblebeenoise. EXTERNAL PRE-AMPLIFIER APPLICATION The LMV1032 can also be used outside of an ECM as a space saving external pre-amplifier. In this application, the LMV1032 follows a phantom biased JFET microphone in the circuit. This is shown in Figure 25. The input of the LMV1032 is connected to the microphone via the 2.2 µF capacitor. The advantage of this circuit over one with only a JFET microphone are the additional gain and the high pass filter supplied by the LMV1032. The high pass filter makes the output signal more robust and less sensitive to low frequency disturbances. In this configurationtheLMV1032shouldbeplacedascloseaspossibletothemicrophone. Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LMV1032

LMV1032 SNAS233G–DECEMBER2003–REVISEDMAY2013 www.ti.com VDD VDD 2.2 k: VDD VIN VOUT VOUT 2.2 PF GND JFET LMV1032 Microphone GND Figure25. LMV1032asExternalPre-Amplifier 10 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:LMV1032

LMV1032 www.ti.com SNAS233G–DECEMBER2003–REVISEDMAY2013 REVISION HISTORY ChangesfromRevisionF(May2013)toRevisionG Page • ChangedlayoutofNationalDataSheettoTIformat.......................................................................................................... 10 Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LMV1032

PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2017 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) LMV1032UP-06/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS SNAGCU Level-1-260C-UNLIM & no Sb/Br) LMV1032UP-15/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS SNAGCU Level-1-260C-UNLIM & no Sb/Br) LMV1032UP-25/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS SNAGCU Level-1-260C-UNLIM & no Sb/Br) LMV1032UPX-06/NOPB ACTIVE DSBGA YPC 4 3000 Green (RoHS SNAGCU Level-1-260C-UNLIM -40 to 85 & no Sb/Br) LMV1032UR-15/NOPB ACTIVE DSBGA YPD 4 250 Green (RoHS SNAGCU Level-1-260C-UNLIM & no Sb/Br) LMV1032UR-25/NOPB ACTIVE DSBGA YPD 4 250 Green (RoHS SNAGCU Level-1-260C-UNLIM & no Sb/Br) LMV1032URX-15/NOPB ACTIVE DSBGA YPD 4 3000 Green (RoHS SNAGCU Level-1-260C-UNLIM -40 to 85 & no Sb/Br) LMV1032URX-25/NOPB ACTIVE DSBGA YPD 4 3000 Green (RoHS SNAGCU Level-1-260C-UNLIM -40 to 85 & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2017 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 24-Aug-2017 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) LMV1032UP-06/NOPB DSBGA YPC 4 250 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1 LMV1032UP-15/NOPB DSBGA YPC 4 250 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1 LMV1032UP-25/NOPB DSBGA YPC 4 250 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1 LMV1032UPX-06/NOPB DSBGA YPC 4 3000 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1 LMV1032UR-15/NOPB DSBGA YPD 4 250 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1 LMV1032UR-25/NOPB DSBGA YPD 4 250 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1 LMV1032URX-15/NOPB DSBGA YPD 4 3000 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1 LMV1032URX-25/NOPB DSBGA YPD 4 3000 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 24-Aug-2017 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) LMV1032UP-06/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 LMV1032UP-15/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 LMV1032UP-25/NOPB DSBGA YPC 4 250 210.0 185.0 35.0 LMV1032UPX-06/NOPB DSBGA YPC 4 3000 210.0 185.0 35.0 LMV1032UR-15/NOPB DSBGA YPD 4 250 210.0 185.0 35.0 LMV1032UR-25/NOPB DSBGA YPD 4 250 210.0 185.0 35.0 LMV1032URX-15/NOPB DSBGA YPD 4 3000 210.0 185.0 35.0 LMV1032URX-25/NOPB DSBGA YPD 4 3000 210.0 185.0 35.0 PackMaterials-Page2

PACKAGE OUTLINE YPD0004 DSBGA - 0.395 mm max height SCALE 14.000 DIE SIZE BALL GRID ARRAY B E A BALL A1 CORNER D C 0.395 MAX SEATING PLANE 0.155 BALL TYP 0.115 0.05 C 0.5 B SYMM 0.5 D: Max = 1.184 mm, Min =1 .123 mm E: Max = 1.184 mm, Min =1 .123 mm A 1 2 0.295 SYMM 4X 0.255 0.015 C A B 4215141/B 08/2016 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. www.ti.com

EXAMPLE BOARD LAYOUT YPD0004 DSBGA - 0.395 mm max height DIE SIZE BALL GRID ARRAY (0.5) 4X ( 0.265) 1 2 A SYMM (0.5) B SYMM LAND PATTERN EXAMPLE SCALE:40X ( 0.265) 0.05 MAX 0.05 MIN METAL UNDER METAL SOLDER MASK SOLDER MASK ( 0.265) OPENING SOLDER MASK OPENING NON-SOLDER MASK DEFINED SOLDER MASK (PREFERRED) DEFINED SOLDER MASK DETAILS NOT TO SCALE 4215141/B 08/2016 NOTES: (continued) 3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009). www.ti.com

EXAMPLE STENCIL DESIGN YPD0004 DSBGA - 0.395 mm max height DIE SIZE BALL GRID ARRAY (0.5) TYP 4X ( 0.25) 1 2 (R0.05) TYP A SYMM (0.5) TYP B METAL TYP SYMM SOLDER PASTE EXAMPLE BASED ON 0.1 mm THICK STENCIL SCALE:50X 4215141/B 08/2016 NOTES: (continued) 4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. www.ti.com

MECHANICAL DATA YPC0004 D 0.350±0.045 E UPA04XXX (Rev C) D: Max = 1.184 mm, Min =1 .123 mm E: Max = 1.184 mm, Min =1 .123 mm 4215139/A 12/12 NOTES: A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. www.ti.com

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