IXFH 22N50P V = 500 V PolarHVTM HiPerFET DSS IXFV 22N50P I = 22 A D25 Power MOSFET IXFV 22N50PS R ≤≤≤≤≤ 270 mΩΩΩΩΩ DS(on) ≤≤≤≤≤ t 200 ns N-Channel Enhancement Mode rr Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 500 V DSS J V T = 25°C to 150°C; R = 1 MΩ 500 V DGR J GS D (TAB) V Continuous ±30 V GS V Transient ±40 V GSM I T = 25°C 22 A PLUS220 (IXFV) D25 C I T = 25°C, pulse width limited by T 55 A DM C JM I T = 25°C 22 A AR C E T = 25°C 30 mJ AR C E T = 25°C 750 mJ AS C G dv/dt I ≤ I , di/dt ≤ 100 A/µs, V ≤ V , 10 V/ns DS D (TAB) S DM DD DSS T ≤ 150°C, R = 10 Ω J G P T = 25°C 350 W D C PLUS220SMD (IXFV...S) T -55 ... +150 °C J T 150 °C JM T -55 ... +150 °C stg T 1.6 mm (0.062 in.) from case for 10 s 300 °C TL Plastic body for 10 s 260 °C G SOLD S M Mounting torque 1.13/10 Nm/lb.in. D (TAB) d Weight TO-247 6 g G = Gate D = Drain PLUS220 & PLUS220SMD 4 g S = Source TAB = Drain Features Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) Min. Typ. Max. J l International standard packages BV V = 0 V, I = 250 µA 500 V l Unclamped Inductive Switching (UIS) DSS GS D rated V V = V , I = 2.5 mA 3.0 5.5 V GS(th) DS GS D l Low package inductance I V = ±30 V , V = 0 ±10 nA - easy to drive and to protect GSS GS DC DS I V = V 5 µA DSS DS DSS V = 0 V T = 125°C 250 µA Advantages GS J R V = 10 V, I = 0.5 I 270 mΩ l Easy to mount DS(on) GS D D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % l Space savings l High power density © 2006 IXYS All rights reserved DS99358E(03/06)

IXFH 22N50P IXFV 22N50P IXFV 22N50PS TO-247 (IXFH) Outline Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. g V = 20 V; I = 0.5 I , pulse test 20 S fs DS D D25 C 2630 pF iss 1 2 3 C V = 0 V, V = 25 V, f = 1 MHz 310 pF oss GS DS C 27 pF rss t 22 ns d(on) t V = 10 V, V = 0.5 V , I = I 25 ns r GS DS DSS D D25 t R = 10 Ω (External) 72 ns Terminals: 1 - Gate 2 - Drain d(off) G 3 - Source Tab - Drain t 21 ns Dim. Millimeter Inches f Min. Max. Min. Max. Q 50 nC A 4.7 5.3 .185 .209 g(on) A 2.2 2.54 .087 .102 Q V = 10 V, V = 0.5 V , I = 0.5 I 16 nC 1 gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 Q 18 nC b 1.0 1.4 .040 .055 gd b 1.65 2.13 .065 .084 1 R 0.35°C/W b2 2.87 3.12 .113 .123 thJC C .4 .8 .016 .031 R (TO-247 & PLUS220) 0.21 °C/W D 20.80 21.46 .819 .845 thCS E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values ∅P 3.55 3.65 .140 .144 (T = 25°C, unless otherwise specified) Q 5.89 6.40 0.232 0.252 J Symbol Test Conditions Min. Typ. Max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 22 A S GS PLUS220 (IXFV) Outline I Repetitive 55 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t I = 22A, -di/dt = 100 A/µs 200 ns rr F Q V = 100V, V = 0 V 0.7 µC RM R GS I 7 A RM PLUS220SMD (IXFV...S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXFH 22N50P IXFV 22N50P IXFV 22N50PS Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 22 55 20 VGS = 10V 50 VGS = 10V 8V 8V 18 45 7V 16 40 7V es 14 s 35 per 12 ere 30 m 6V mp I - AD 108 I - AD 2205 6V 6 15 4 10 5V 2 5 5V 0 0 0 1 2 3 4 5 6 7 0 3 6 9 12 15 18 21 24 27 30 VD S - Volts VD S - Volts Fig. 3. Output Characteristics Fig. 4. R Normalized to 0.5 I DS(on) D25 @ 125ºC Value vs. Junction Temperature 22 3.1 20 VGS = 10V 7V 2.8 VGS = 10V 18 d 2.5 16 e z es 14 6V mali 2.2 per 12 or 1.9 ID = 22A m N I - AD 108 5V - S ( o n ) 11..36 ID = 11A 6 R D 1 4 2 0.7 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 VD S - Volts TJ - Degrees Centigrade Fig. 5. R Normalized to DS(on) Fig. 6. Drain Current vs. Case 0.5 ID25 Value vs. ID Temperature 3.1 24 2.8 VGS = 10V TJ = 125ºC 20 ed 2.5 z ali s 16 m 2.2 e or per N 1.9 m 12 - o n ) 1.6 - AD S ( I 8 D R 1.3 TJ = 25ºC 4 1 0.7 0 0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150 I - Amperes T - Degrees Centigrade D C © 2006 IXYS All rights reserved

IXFH 22N50P IXFV 22N50P IXFV 22N50PS Fig. 7. Input Admittance Fig. 8. Transconductance 35 40 30 35 30 TJ = -40ºC 25 eres 20 mens 25 1 2255ººCC mp Sie 20 A I - D 15 TJ = 125ºC g - f s 15 10 25ºC 10 -40ºC 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 20 25 30 35 40 V - Volts I - Amperes G S D Fig. 9. Source Current vs. Fig. 10. Gate Charge Source-To-Drain Voltage 70 10 9 VDS = 250V 60 8 ID = 11A 50 7 IG = 10mA s I - AmpereS 3400 TJ = 125ºC V - VoltsG S 456 20 3 TJ = 25ºC 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 15 20 25 30 35 40 45 50 VS D - Volts Q G - nanoCoulombs Fig. 12. Forward-Bias Fig. 11. Capacitance Safe Operating Area 10000 100 f = 1MHz RDS(on) Limit s d a Ciss Far 1000 es 25µs o er c p pi m 100µs ance - Coss I - AD 10 1ms cit 100 a p a 10ms C TJ = 150ºC DC Crss TC = 25ºC 10 1 0 5 10 15 20 25 30 35 40 10 100 1000 V - Volts V - Volts D S D S IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 22N50P IXFV 22N50P IXFV 22N50PS Fig. 13. Maximum Transient Thermal Resistance 1.00 W C / º -C 0.10 J h ) R( t 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds © 2006 IXYS All rights reserved

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