Type IPD053N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. V 60 V DS • 100% avalanche tested R 5.3 mW DS(on),max • Superior thermal resistance I 45 A D • N-channel QOSS 32 nC • Qualified according to JEDEC1) for target applications QG(0V..10V) 27 nC • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 PG-TO252-3 Type Package Marking IPD053N06N PG-TO252-3 053N06N Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I V =10 V, T =25 °C 45 A D GS C V =10 V, T =100 °C 45 GS C V =10 V, T =25 °C, GS C 18 R =50K/W thJA Pulsed drain current2) ID,pulse TC=25 °C 180 Avalanche energy, single pulse3) EAS ID=45 A, RGS=25 W 60 mJ Gate source voltage V ±20 V GS 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.2.2 page 1 2012-12-20

IPD053N06N Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Power dissipation P T =25 °C 83 W tot C T =25 °C, A 3.0 R =50 K/W thJA Operating and storage temperature T , T -55 ... 175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R bottom - - 1.8 K/W thJC Device on PCB R minimal footprint - - 62 thJA 6 cm² cooling area4) - - 40 Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =36 µA 2.1 2.8 3.3 GS(th) DS GS D V =60 V, V =0 V, Zero gate voltage drain current I DS GS - 0.5 1 µA DSS T =25 °C j V =60 V, V =0 V, DS GS - 10 100 T =125 °C j Gate-source leakage current I V =20 V, V =0 V - 10 100 nA GSS GS DS Drain-source on-state resistance R V =10 V, I =45 A - 4.5 5.3 mW DS(on) GS D V =6 V, I =12 A - 6.0 8.0 GS D Gate resistance R - 1.5 2.3 W G |V |>2|I |R , Transconductance g DS D DS(on)max 38 75 - S fs I =45 A D Rev.2.2 page 2 2012-12-20

IPD053N06N Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 2000 2500 pF iss V =0 V, V =30 V, Output capacitance C GS DS - 490 613 oss f=1 MHz Reverse transfer capacitance C - 22 44 rss Turn-on delay time t - 12 - ns d(on) V =30 V, V =10 V, Rise time t DD GS - 12 - r I =45 A, D Turn-off delay time td(off) RG,ext,ext=3 W - 20 - Fall time t - 7 - f Gate Charge Characteristics5) Gate to source charge Q - 9 - nC gs Gate charge at threshold Q - 5 - g(th) Gate to drain charge Qgd V =30 V, I =45 A, - 5 7 DD D V =0 to 10 V Switching charge Q GS - 9 - sw Gate charge total Q - 27 32 g Gate plateau voltage V - 4.8 - V plateau V =0.1 V, Gate charge total, sync. FET Q DS - 24 - nC g(sync) V =0 to 10 V GS Output charge Q V =30 V, V =0 V - 32 - oss DD GS Reverse Diode Diode continuous forward current I - - 45 A S T =25 °C C Diode pulse current I - - 180 S,pulse V =0 V, I =45 A, Diode forward voltage V GS F - 1.0 1.2 V SD T =25 °C j Reverse recovery time trr V =30 V, I =45A, - 32 51 ns R F di /dt=100 A/µs Reverse recovery charge Q F - 28 - nC rr Rev.2.2 page 3 2012-12-20

IPD053N06N 1 Power dissipation 2 Drain current P =f(T ) I =f(T ); V ≥10 V tot C D C GS 100 50 80 40 60 30 W] A] P [tot I [D 40 20 20 10 0 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I =f(V ); T =25 °C; D=0 Z =f(t ) D DS C thJC p parameter: t parameter: D=t /T p p 103 10 limited by on-state resistance 1 µs 102 10 µs 100 µs 1 0.5 ] W A] 101 1 ms K/ 0.2 [D 10 ms [C 0.1 I J h DC Zt 0.05 0.02 0.1 0.01 100 single pulse 10-1 0.01 10-1 100 101 102 0.00001 0.0001 0.001 0.01 0.1 1 V [V] t [s] DS p Rev.2.2 page 4 2012-12-20

IPD053N06N 5 Typ. output characteristics 6 Typ. drain-source on resistance I =f(V ); T =25 °C R =f(I ); T =25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 180 16 10 V 7 V 160 6 V 14 5 V 5.5 V 6 V 140 12 120 10 ] W 100 5.5 V m [A] D [on) 8 I 80 S( D R 6 7 V 60 5 V 10 V 4 40 2 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 180 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance I =f(V ); |V |>2|I |R g =f(I ); T =25 °C D GS DS D DS(on)max fs D j parameter: T j 180 80 160 70 140 60 120 50 100 A] S] I [D 80 g [fs 40 30 60 20 40 20 175 °C 10 25 °C 0 0 0 2 4 6 8 0 5 10 15 20 25 30 35 40 45 V [V] I [A] GS D Rev.2.2 page 5 2012-12-20

IPD053N06N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R =f(T ); I =45 A; V =10 V V =f(T ); V =V DS(on) j D GS GS(th) j GS DS 12 5 11 10 4 9 8 ]W 7 3 m max V] 360 mA [n) 6 [h) RDS(o 5 typ VGS(t 36 µA 2 4 3 1 2 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(V ); V =0 V; f=1 MHz I =f(V ) DS GS F SD parameter: T j 104 10000 103 Ciss 103 102 1000 pF] Coss A] C [ I [F 102 100 101 25 °C 175 °C Crss 101 100 10 0 20 40 60 0 0.5 1 1.5 V [V] V [V] DS SD Rev.2.2 page 6 2012-12-20

IPD053N06N 13 Avalanche characteristics 14 Typ. gate charge I =f(t ); R =25 W V =f(Q ); I =45 A pulsed AS AV GS GS gate D parameter: T parameter: V j(start) DD 100 12 30 V 10 12 V 48 V 100 °C 25 °C 8 125 °C A] V] [V 10 [S 6 A G I V 4 2 1 0 1 10 100 1000 0 5 10 15 20 25 30 tAV [µs] Q [nC] gate 15 Drain-source breakdown voltage 16 Gate charge waveforms V =f(T ); I =1 mA BR(DSS) j D 70 V GS Q g 66 V] 62 [S) S D R( B V 58 Vgs(th) 54 Qg(th) Qsw Qgate Q Q 50 gs gd -60 -20 20 60 100 140 180 T [°C] j Rev.2.2 page 7 2012-12-20

IPD053N06N Package Outline PG-TO252-3 Rev.2.2 page 8 2012-12-20

IPD053N06N Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 page 9 2012-12-20

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