IPB180N04S3-02 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 1.5 mΩ DS(on) I 180 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-7-3 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N04S3-02 PG-TO263-7-3 3QN0402 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current1) ID TC=25 °C, VGS=10 V 180 A T =100 °C, C 180 V =10 V2) GS Pulsed drain current2) ID,pulse TC=25 °C 720 Avalanche energy, single pulse E I =80 A 1880 mJ AS D Gate source voltage V ±20 V GS Power dissipation P T =25 °C 300 W tot C Operating and storage temperature T , T -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2007-04-16

IPB180N04S3-02 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R - - 0.5 K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 6 cm2 cooling area3) - - 40 Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I = 1 mA 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =230 µA 2.1 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, Zero gate voltage drain current I DS GS - - 1 µA DSS T =25 °C j V =40 V, V =0 V, DS GS - - 100 T =125 °C2) j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS Drain-source on-state resistance R V =10 V, I =80 A - 1.1 1.5 mΩ DS(on) GS D Rev. 1.0 page 2 2007-04-16

IPB180N04S3-02 Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics2) Input capacitance C - 11000 14300 pF iss V =0 V, V =25 V, Output capacitance C GS DS - 3000 3900 oss f=1 MHz Reverse transfer capacitance C - 470 710 rss Turn-on delay time t - 35 - ns d(on) Rise time tr V =20 V, V =10 V, - 19 - DD GS I =80 A, R =1.3 Ω Turn-off delay time t D G - 57 - d(off) Fall time t - 18 - f Gate Charge Characteristics2) Gate to source charge Q - 54 70 nC gs Gate to drain charge Qgd V =32 V, I =80 A, - 38 66 DD D V =0 to 10 V Gate charge total Q GS - 160 210 g Gate plateau voltage V - 5.0 - V plateau Reverse Diode Diode continous forward current2) IS - - 180 A T =25 °C C Diode pulse current2) IS,pulse - - 720 V =0 V, I =80 A, Diode forward voltage V GS F - 0.83 1.3 V SD T =25 °C j Reverse recovery time2) trr V =20 V, I =50 A, - 70 - ns R F di /dt=100 A/µs Reverse recovery charge2) Qrr F - 145 - nC 1) Current is limited by bondwire; with an R = 0.5 K/W the chip is able to carry 321 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2007-04-16

IPB180N04S3-02 1 Power dissipation 2 Drain current P = f(T ); V ≥ 6 V I = f(T ); V ≥ 6 V tot C GS D C GS 350 200 300 150 250 200 ] W A] [ot [D 100 Pt 150 I 100 50 50 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I = f(V ); T = 25 °C; D = 0 Z = f(t ) D DS C thJC p parameter: t parameter: D=t /T p p 1000 100 1 µs 10 µs 0.5 100 µs 1 ms 10-1 0.1 ] W A] K/ 0.05 [ 100 [ D C I hJ t Z 0.01 10-2 single pulse 10 10-3 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p Rev. 1.0 page 4 2007-04-16

IPB180N04S3-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I = f(V ); T = 25 °C R = (I ); T = 25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 800 10 10 V 55.5.5 VV 6 V 6.5 V 9 7 V 700 8 600 7 500 6.5 V Ω] 6 m [A]ID 400 [DS(on) 5 6 V R 4 300 7 V 3 200 5.5 V 2 100 5 V 1 10 V 0 0 0 1 2 3 4 5 6 0 200 400 600 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I = f(V ); V = 6V R = f(T ); I = 80 A; V = 10 V D GS DS DS(on) j D GS parameter: T j 700 2.5 600 2 500 ] Ω 400 m I [A]D 300 [ DS(on) 1.5 R 200 1 175 °C 100 25 °C -55 °C 0 0.5 2 3 4 5 6 7 -60 -20 20 60 100 140 180 VGS [V] Tj [°C] Rev. 1.0 page 5 2007-04-16

IPB180N04S3-02 9 Typ. gate threshold voltage 10 Typ. capacitances V = f(T ); V = V C= f(V ); V = 0 V; f = 1 MHz GS(th) j GS DS DS GS parameter: I D 4 105 3.5 3 2300µA 104 Ciss ] V ] [ 230µA F GS(th) 2.5 [pC Coss V 2 103 Crss 1.5 1 -60 -20 20 60 100 140 180 0 5 10 15 20 25 30 T [°C] V [V] j DS 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(V ) I = f(t ) SD AS AV parameter: T parameter: T j j(start) 103 1000 102 100 25°C 100°C 150°C A] A] [F 175 °C 25 °C [AV I I 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000 V [V] t [µs] SD AV Rev. 1.0 page 6 2007-04-16

IPB180N04S3-02 13 Typical avalanche energy 14 Drain-source breakdown voltage E = f(T ) V = f(T ); I = 1 mA AS j BR(DSS) j D parameter: I D 8000 52 7000 20 A 48 6000 5000 44 ] V mJ] [S) [AS4000 R(DS E 40 A VB 40 3000 2000 80 A 36 1000 0 32 25 75 125 175 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 15 Typ. gate charge 16 Gate charge waveforms V = f(Q ); I = 80 A pulsed GS gate D parameter: V DD 12 VV GGSS 10 QQ gg 8 V 32 V 8 ] V [S 6 G V 4 2 QQggaattee QQggss QQggdd 0 0 40 80 120 160 Q [nC] gate Rev. 1.0 page 7 2007-04-16

IPB180N04S3-02 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2007-04-16

IPB180N04S3-02 Revision History Version Date Changes Rev. 1.0 page 9 2007-04-16

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