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  • 型号: HMC498LC4
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
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产品参数

参数 数值
产品目录 射频/IF 和 RFID
描述 IC MODULATOR SIGE DIRECT 24-QFN
产品分类 RF 放大器
品牌 Hittite Microwave Corporation
数据手册 点击此处下载产品Datasheet
产品图片
P1dB 25dBm
产品型号 HMC498LC4
RF类型 通用
rohs 无铅 / 符合限制有害物质指令(RoHS)规范要求
产品系列 -
供应商器件封装 24-VQFN (4x4)
其它名称 1127-1432
包装 散装
噪声系数 4dB
增益 22dB
封装/外壳 24-VQFN 裸露焊盘
标准包装 50
测试频率 18GHz
电压-电源 4.5 V ~ 5.5 V
电流-电源 250mA
频率 17GHz ~ 24GHz

Datasheet

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HMC498LC4 v05.0418 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver Output IP3: +36 dBm T amplifier for: Saturated Power: +26 dBm @ 23% PAE M • Point-to-Point Radios Gain: 22 dB S • Point-to-Multi-Point Radios & VSAT +5V @ 250 mA Supply - • Test Equipment & Sensors S 50 Ohm Matched Input/Output R • Military End-Use RoHS Compliant 4x4 mm SMT Package E I F I Functional Diagram General Description L P The HMC498LC4 is a high dynamic range GaAs M PHEMT MMIC Medium Power Amplifier housed in a A leadless “Pb free” SMT package. Operating from 17 R to 24 GHz, the amplifier provides 22 dB of gain, +26 E dBm of saturated power and 23% PAE from a +5V W supply voltage. Noise figure is 4 dB while output IP3 is O +36 dBm typical enabling the HMC498LC4 to function as a low noise front end as well as a driver amplifier. P The RF I/Os are DC blocked and matched to 50 Ohms & for ease of use. The HMC498LC4 eliminates the R need for wire bonding, allowing use of surface mount A manufacturing techniques. E N I L Electrical Specifications, T = +25° C, Vdd1, 2, 3 = 5V, Idd = 250 mA* A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 17 - 19 19 - 23 23 - 24 GHz Gain 18 22 20 22.5 18 21 dB Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.02 0.03 dB/ °C Input Return Loss 13 13 10 dB Output Return Loss 15 15 20 dB Output Power for 1 dB Compression (P1dB) 22 25 21.5 24.5 22.5 25.5 dBm Saturated Output Power (Psat) 26.5 25.5 26.5 dBm Output Third Order Intercept (IP3) 35 36 35.5 dBm Noise Figure 4.0 4.0 4.5 dB Supply Current (Idd)(Vdd = +5V, Vgg = -0.8V 250 250 250 mA Typ.) * Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaayt iroens uolrt fortohme riwtsi sues eu.n Sdpeer caifinyc aptiaotnesn ts ourb jpeactte tnot crhigahntgs eo wf Aitnhaoluotg n oDteicveic. eNso. Phone: 781-329-4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D

HMC498LC4 v05.0418 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 26 T 15 22 M B) NSE (d 5 SSS212112 N (dB) 18 - S SPO -5 GAI S E R R -15 14 ++-428055 CCC E I F -25 10 I L 12 14 16 18 20 22 24 26 28 16 17 18 19 20 21 22 23 24 25 P FREQUENCY (GHz) FREQUENCY (GHz) M A Input Return Loss vs. Temperature Output Return Loss vs. Temperature R E 0 0 W +25 C -5 O dB) -5 +-4805 CC dB) P OSS ( OSS ( -10 ++-428055 CCC & N L -10 N L UR UR -15 R T T E E A R R -15 -20 E N -20 -25 LI 16 17 18 19 20 21 22 23 24 25 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 30 30 26 26 m) 22 m) 22 P1dB (dB 18 ++2855 CC Psat (dB 18 ++2855 CC -40 C -40 C 14 14 10 10 16 17 18 19 20 21 22 23 24 25 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 2 Application Support: Phone: 1-800-ANALOG-D

HMC498LC4 v05.0418 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Output IP3 vs. Temperature Noise Figure vs. Temperature 40 10 9 T +25 C M 36 8 +85 C dB) 7 -40 C S m) 32 RE ( 6 B U RS - IP3 (d 28 ++-428055 CCC NOISE FIG 345 E 24 2 I F 1 I 20 0 L 16 17 18 19 20 21 22 23 24 25 16 17 18 19 20 21 22 23 24 25 P FREQUENCY (GHz) FREQUENCY (GHz) M A Gain, Power & OIP3 R vs. Supply Voltage @ 23 GHz Reverse Isolation vs. Temperature E m) 40 0 W dB P3 ( 36 -10 O m), I R & P Bm), Psat (dB 2382 PGPIPs1a3adintB LATION (dB) ---432000 ++-428055 CCC d O A dB ( IS -50 1 24 NE dB), P -60 n ( 20 LI Gai 4.5 5 5.5 -70 16 17 18 19 20 21 22 23 24 25 Vdd Supply Voltage (Vdc) FREQUENCY (GHz) Power Compression @ 18 GHz Power Compression @ 23 GHz 30 30 %) 25 %) 25 E ( E ( A A P P B), 20 B), 20 d d N ( N ( AI 15 AI 15 G G m), 10 m), 10 B B d d ut ( Pout (dBm) ut ( Pout (dBm) Po 5 Gain (dB) Po 5 Gain (dB) PAE (%) PAE (%) 0 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 -10 -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) INPUT POWER (dBm) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 3 Application Support: Phone: 1-800-ANALOG-D

HMC498LC4 v05.0418 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Vdd (Vdc) Idd (mA) Gate Bias Voltage (Vgg) -4.0 to 0 Vdc +4.5 239 T RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm +5.0 250 M Channel Temperature 175 °C +5.5 262 S Continuous Pdiss (T= 85 °C) 1.62 W Note: Amplifier will operate over full voltage ranges shown - (derate 18 mW/°C above 85 °C) above. Vgg adjusted to achieve Idd= 250 mA at +5V. S Thermal Resistance 55.6 °C/W R (channel to ground paddle) E Storage Temperature -65 to +150 °C I Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE F I ESD Sensitivity (HBM) Class 1A OBSERVE HANDLING PRECAUTIONS L 24-Terminal Ceramic Leadless Chip Carrier [LCC] P (E-24-1) M Dimensions shown in millimeters. Outline Drawing A R 4.05 0.36 E 3.90 SQ 0.30 PIN 1 3.75 0.08 0.24 W INDICATOR BSC PIN 1 19 24 O 18 1 0.50 P BSC 2.60 EXPPOADSED 2.50 SQ & 2.40 R 13 6 TOP VIEW 0.32 12 BOTTOM VIEW 7 A BSC 2.50 REF E 1.00 3.10 BSC 0.90 SIDE VIEW N 0.80 FOR PROPER CONNECTION OF I THE EXPOSED PAD, REFER TO L THE PIN CONFIGURATION AND SEATING FUNCTION DESCRIPTIONS PLANE SECTION OF THIS DATA SHEET. PKG-004840 02-27-2017-B 24-Terminal Ceramic Leadless Chip Carrier [LCC] (E-24-1) Dimensions shown in millimeters. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [2] HMC498LC4 Alumina, White Gold over Nickel MSL3 [1] H498 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 4 Application Support: Phone: 1-800-ANALOG-D

HMC498LC4 v05.0418 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Pin Descriptions Pin Number Function Description Interface Schematic T These pins are not connected internally; however, all data 1, 5 - 8, 10 - 14, M 18, 20, 22, 24 N/C shown herein was measured with these pins connected to RF/DC ground externally. S - 2, 4, 15, 17 GND Package baolsttoo mbe h caosn anne cetxepdo tsoe Rd Fm/DeCta lg proaudnddle. that must S R This pin is AC coupled 3 RFIN E and matched to 50 Ohms. I F LI Gate control for amplifier. Adjust to achieve Id of 250 mA. Please follow “MMIC Amplifier Biasing Procedure” P 9 Vgg Application Note. External bypass capacitors of 100 pF, M 1000 pF and 2.2 µF are required. A R This pin is AC coupled 16 RFOUT E and matched to 50 Ohms. W O Power Supply Voltage for the amplifier. External bypass 23, 21, 19 Vdd1, Vdd2, Vdd3 P capacitors of 100 pF, 1000pF, and 2.2 µF are required. & R Application Circuit A E N I L For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 5 Application Support: Phone: 1-800-ANALOG-D

HMC498LC4 v05.0418 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Evaluation PCB T M S - S R E I F I L P M A R E W O P & R A E N I L List of Materials for Evaluation PCB 108537 [1] The circuit board used in this application should use Item Description RF circuit design techniques. Signal lines should J1, J2 2.92 mm PC mount K-connector have 50 Ohm impedance while the package ground J3 - J8 DC Pin leads and exposed paddle should be connected C1 - C4 100 pF capacitor, 0402 pkg. directly to the ground plane similar to that shown. C5 - C8 1,000 pF Capacitor, 0603 pkg. A sufficient number of via holes should be used to C9 - C12 2.2µF Capacitor, Tantalum connect the top and bottom ground planes. The U1 HMC498LC4 Amplifier evaluation board should be mounted to an appro- PCB [2] 108535 Evaluation PCB priate heat sink. The evaluation circuit board shown [1] Reference this number when ordering complete evaluation PCB is available from Analog Devices, upon request. [2] Circuit Board Material: Rogers 4350. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 6 Application Support: Phone: 1-800-ANALOG-D