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  • 型号: HMC460LC5TR
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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产品参数

参数 数值
产品目录 射频/IF 和 RFID
描述 IC MMIC AMP LNA GAAS 32SMD
产品分类 RF 放大器
品牌 Hittite Microwave Corporation
数据手册 点击此处下载产品Datasheet
产品图片
P1dB 16dBm
产品型号 HMC460LC5TR
RF类型 通用
rohs 无铅 / 符合限制有害物质指令(RoHS)规范要求
产品系列 -
供应商器件封装 32-CSMT (5x5)
其它名称 1127-1758-2
包装 带卷 (TR)
噪声系数 2.5dB
增益 14dB
封装/外壳 32-TFCQFN 裸露焊盘
标准包装 100
测试频率 10GHz
特色产品 http://www.digikey.cn/product-highlights/zh/wideband-distributed-amplifiers/52879
电压-电源 8V
电流-电源 75mA
配用 /product-detail/zh/117810-HMC460LC5/1127-2382-ND/4794677
频率 0Hz ~ 20GHz

Datasheet

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HMC460LC5 v08.1217 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Typical Applications Features The HMC460LC5 is ideal for: Noise Figure: 2.5 dB @ 10 GHz T • Telecom Infrastructure Gain: 14 dB @ 10 GHz M • Microwave Radio & VSAT P1dB Output Power: +16.5 dBm @ 10 GHz S • Military & Space Supply Voltage: +8V @ 75 mA - E • Test Instrumentation 50 Ohm Matched Input/Output S 32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2 I O Functional Diagram General Description N W The HMC460LC5 is a GaAs MMIC pHEMT Low Noise Distributed Amplifier in a leadless 5 x 5 mm ceramic O surface mount package which operates from DC to L 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB - noise figure and +16.5 dBm of output power at 1 dB S gain compression while requiring only 75 mA from a R E Vdd = 8V supply. Gain flatness is excellent from DC I to 20 GHz making the HMC460LC5 ideal for EW, F ECM, Radar and test equipment applications. The I L wideband amplifier I/Os are internally matched to P 50 Ohms. M A Electrical Specifications, T = +25 °C, Vdd= 8V, Idd= 75 mA* A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 6.0 6.0 - 18.0 18.0 - 20.0 GHz Gain 11 14 11 14 10 13 dB Gain Flatness ± 0.5 ± 0.15 ± 0.25 dB Gain Variation Over Temperature 0.008 0.01 0.01 dB/ °C Noise Figure 3.5 5.0 2.5 4.0 3.5 5 dB Input Return Loss 17 18 12 dB Output Return Loss 17 15 15 dB Output Power for 1 dB Compression (P1dB) 14 17 13 16 12 15 dBm Saturated Output Power (Psat) 18 18 17 dBm Output Third Order Intercept (IP3) 29.5 29 28.5 dBm Supply Current 75 75 75 mA (Idd) (Vdd= 8V, Vgg= -0.9V Typ.) *Adjust Vgg between -2 to 0V to achieve Idd= 75 mA typical. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaayt iroens uolrt fortohme riwtsi sues eu.n Sdpeer caifinyc aptiaotnesn ts ourb jpeactte tnot crhigahntgs eo wf Aitnhaoluotg n oDteicveic. eNso. Phone: 781-329-4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D

HMC460LC5 v08.1217 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 15 T 10 16 M 5 B) S NSE (d -50 N (dB) 12 E - ESPO--1150 GAI 8 R -20 S -25 4 I O -30 -35 0 N 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) W S11 S21 S22 +25 C +85 C -40 C O L - Input Return Loss vs. Temperature Output Return Loss vs. Temperature S R 0 0 E -5 -5 I F B)-10 B) LI SS (d-15 SS (d-10 O O P RN L-20 RN L-15 M U U A RET-25 RET-20 -30 -25 -35 -30 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) +25 C +85 C -40 C +25 C +85 C -40 C Low Frequency Gain & Return Loss Noise Figure vs. Temperature 25 10 20 15 8 10 E (dB) 05 RE (dB) 6 S -5 U N G RESPO---211050 OISE FI 4 N -25 2 -30 -35 -40 0 10-5 0.0001 0.001 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) +25 C +85 C -40 C S11 S21 S22 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 2 Application Support: Phone: 1-800-ANALOG-D

HMC460LC5 v08.1217 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz P1dB vs. Temperature Psat vs. Temperature 25 25 T 22 22 M m) 19 m) 19 S B B dB (d AT (d - P1 16 PS 16 E S 13 13 I O 10 10 N 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) W +25 C +85 C -40 C +25 C + 85 C -40 C O L Gain, Power & Noise Figure - Output IP3 vs. Temperature vs. Supply Voltage @ 10 GHz, Fixed Vgg S 32 18 5 R E 30 28 Bm) 16 4 N FI IP3 (dBm) 222246 GAIN (dB), P1dB (d 111024 123 OISE FIGURE (dB) AMPLI 20 18 8 0 0 2 4 6 8 10 12 14 16 18 20 22 7.5 7.75 8 8.25 8.5 FREQUENCY (GHz) Vdd (V) GAIN P1dB +25 C +85 C -40 C NOISE FIGURE Additive Phase Noise Vs Offset Frequency, Reverse Isolation vs. Temperature RF Frequency = 10 GHz, RF Input Power = 8 dBm (Psat) 0 -80 -90 -10 LATION (dB)--3200 E (dBc/Hz)---111210000 REVERSE ISO---654000 PHASE NOIS----111165430000 -170 -70 -180 0 2 4 6 8 10 12 14 16 18 20 22 100 1K 10K 100K 1M FREQUENCY (GHz) OFFSET FREQUENCY (Hz) +25 C +85 C -40 C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 3 Application Support: Phone: 1-800-ANALOG-D

HMC460LC5 v08.1217 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +9 Vdc Gate Bias Voltage (Vgg) -2 to 0 Vdc Vdd (V) Idd (mA) T Gate Bias Voltage (Igg) 2.5 mA +7.5 74 M RF Input Power (RFIN)(Vdd = +8 Vdc) +18 dBm +8.0 75 S Channel Temperature 175 °C +8.5 76 - Continuous Pdiss (T = 85 °C) 2 W E (derate 23 mW/°C above 85 °C) S Thermal Resistance 44.4 °C/W (channel to package bottom) ELECTROSTATIC SENSITIVE DEVICE I O Storage Temperature -65 to +150 °C OBSERVE HANDLING PRECAUTIONS N Operating Temperature -55 to +85 °C 32-Terminal Ceramic Leadless Chip Carrier [LCC] W ESD Sensitivity (HBM) Class 1A (E-32-1) Dimensions shown in millimeters. O Outline Drawing L - S 5.05 0.36 4.90 SQ 0.30 R INDICAPTINO R1 4.75 0.08 0.24 E REF 25 32 PIN 1 I 24 1 F I 0.50 L BSC 3.60 P EXPPOADSED 3.50 SQ 3.40 M A 17 8 0.38 16 9 TOP VIEW 0.32 BOTTOM VIEW 0.20 MIN 3.50 REF 0.26 1.10 4.10 REF 1.00 SIDE VIEW 0.90 FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND SEATING FUNCTION DESCRIPTIONS PLANE SECTION OF THIS DATA SHEET. D PKG-004843 04-24-2017- 32-Terminal Ceramic Leadless Chip Carrier [LCC] (E-32-1) Dimensions shown in millimeters. ORDERING GUIDE Part Number Package Material Lead Finish MSL Rating Package Marking [2] H460 HMC460LC5 Alumina, White Gold over Nickel MSL3 [1] XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 4 Application Support: Phone: 1-800-ANALOG-D

HMC460LC5 v08.1217 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Pin Descriptions T Pin Number Function Description Interface Schematic M 1 - 4, 7 - 12, S No connection. These pins may be connected to RF ground. 14, 16 - 20, N/C Performance will not be affected. - 23 - 29, 31 E S 5 RFIN This pin is DC coupled OI and matched to 50 Ohms. N W 6, 21 GND Package bottom must be connected to RF/DC ground. O L - S Low frequency termination. Attach bypass capacitor per 13 ACG2 R application circuit herein. E I F I L Gate control for amplifier. P 15 Vgg Please follow “MMIC Amplifier Biasing Procedure” M application note A This pin is DC coupled 22 RFOUT and matched to 50 Ohms. Low frequency termination. Attach bypass capacitor per 30 ACG1 application circuit herein. Power supply voltage for the amplifier. 32 Vdd External bypass capacitors are required For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 5 Application Support: Phone: 1-800-ANALOG-D

HMC460LC5 v08.1217 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Application Circuit T M S - E S I O N W O L - S R E I F I L P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 6 Application Support: Phone: 1-800-ANALOG-D

HMC460LC5 v08.1217 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Evaluation PCB T M S - E S I O N W O L - S R E I F I L P M A List of Materials for Evaluation PCB 117810 [1] The circuit board used in the application should use Item Description RF circuit design techniques. Signal lines should have J1 - J2 PCB Mount SMA Connector 50 Ohm impedance while the package ground leads J3 - J4 2 mm Molex Header and package bottom should be connected directly to C4 100 pF Capacitor, 0402 Pkg. the ground plane similar to that shown. A sufficient C2, C3 1000 pF Capacitor, 0402 Pkg. number of via holes should be used to connect the C1 4.7 µF Capacitor, Tantalum top and bottom ground planes. The evaluation board C5 0.1 uF Capacitor, 0603 Pkg. should be mounted to an appropriate heat sink. The C6 0.01 uF Capacitor, 0603 Pkg. evaluation circuit board shown is available from C7 2.2 uF Capacitor, 0603 Pkg. Analog Devices upon request. U1 HMC460LC5 PCB [2] 117808 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 7 Application Support: Phone: 1-800-ANALOG-D