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  • 型号: HMC451LP3E
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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产品参数

参数 数值
产品目录 射频/IF 和 RFID
描述 IC MMIC PWR AMP 16QFN
产品分类 RF 放大器
品牌 Hittite Microwave Corporation
数据手册 点击此处下载产品Datasheet
产品图片
P1dB 19dBm
产品型号 HMC451LP3E
RF类型 通用
rohs 无铅 / 符合限制有害物质指令(RoHS)规范要求
产品系列 -
供应商器件封装 16-QFN(3x3)
其它名称 1127-1045-6
包装 Digi-Reel®
噪声系数 7dB
增益 16dB
封装/外壳 16-VFQFN 裸露焊盘
标准包装 1
测试频率 -
电压-电源 5V
电流-电源 150mA
频率 5GHz ~ 18GHz

Datasheet

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HMC451LP3 / 451LP3E v01.0118 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Typical Applications Features The HmC451lp3(e) is ideal for: Gain: 18 dB T • microwave radio & VsAT saturated power: +21 dBm @ 18% pAe m • military & space output ip3: +28 dBm s • Test equipment & sensors single supply: +5V @ 120 mA - • fiber optics 50 ohm matched input/output r • lo Driver for HmC mixers 16 lead 3x3mm smT package: 9mm² e w o Functional Diagram General Description p & The HmC451lp3(e) is an efficient GaAs pHemT mmiC medium power Amplifier housed in a leadless r roHs compliant smT package. operating between A 5 and 18 GHz, the amplifier provides 18 dB of gain, e +21 dBm of saturated power and 18% pAe from a n single +5V supply. This 50 ohm matched amplifier i l does not require any external components and the - rf i/o’s are DC blocked, making it an ideal linear s gain block or lo driver for HmC mixers. The r HmC451lp3(e) eliminates the need for wire bonding, e and allows the use of surface mount manufacturing i f techniques. i l p m A Electrical Specifications, T = +25° C, Vdd = Vdd = +5V A 1 2 parameter min. Typ. max. min. Typ. max. Units frequency range 5 - 16 16 - 18 GHz Gain 15 18 12.5 16 dB Gain Variation over Temperature 0.02 0.03 0.02 0.03 dB/ °C input return loss 13 13 dB output return loss 12 8 dB output power for 1 dB 16.5 19.5 16 19 dBm Compression (p1dB) saturated output power (psat) 21 20 dBm output Third order intercept (ip3) 28 25 dBm noise figure 7 7 dB supply Current (idd) 120 150 120 150 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaayt iroens uolrt fortohme riwtsi sues eu.n Sdpeer caifinyc aptiaotnesn ts ourb jpeactte tnot crhigahntgs eo wf Aitnhaoluotg n oDteicveic. eNso. Phone: 781-329-4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D

HMC451LP3 / 451LP3E v01.0118 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 24 T 20 15 E (dB) 5 SS2111 SS (dB) 16 sm S S22 O ON N L 12 - RESP -5 ETUR 8 ++2855CC r R -40C e -15 4 w o -25 0 4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20 p FREQUENCY (GHz) FREQUENCY (GHz) & r A Input Return Loss vs. Temperature Output Return Loss vs. Temperature e 0 0 n i +25C l -5 +85C -5 B) -40C B) - SS (d -10 SS (d -10 s O O L L r N N UR -15 UR -15 e T T E E i R R f +25C -20 -20 +85C i -40C l p -25 -25 m 4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) FREQUENCY (GHz) A P1dB vs. Temperature Psat vs. Temperature 28 28 24 24 20 20 m) m) P1dB (dB 1126 +25C Psat (dB 1126 +25C +85C +85C 8 -40C 8 -40C 4 4 0 0 4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 2 Application Support: Phone: 1-800-ANALOG-D

HMC451LP3 / 451LP3E v01.0118 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Power Compression @ 10 GHz Power Compression @ 17 GHz 24 24 T %) 20 %) 20 E ( E ( m PA PA - s GAIN (dB), 1126 GPPoaAuiEnt (((dd%BB))m) GAIN (dB), 1126 GPPoaAuiEnt (((dd%BB))m) r m), 8 m), 8 B B e ut (d ut (d w o 4 o 4 P P o 0 0 p -18 -14 -10 -6 -2 2 6 -18 -14 -10 -6 -2 2 6 INPUT POWER (dBm) INPUT POWER (dBm) & r A Output IP3 vs. Temperature Noise Figure vs. Temperature e 32 12 n i l 30 10 - B) s m) 28 RE (d 8 B U r 3 (d 26 FIG e IP SE 6 i 24 OI f +25C N +85C +25C li 22 -40C 4 +-4805CC p 20 2 m 4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20 A FREQUENCY (GHz) FREQUENCY (GHz) Gain, P1dB & PSAT vs. Supply Voltage @ 11 GHz Reverse Isolation vs. Temperature 22 0 m) dB 21 -10 at ( Bm), Ps 20 N (dB) -20 ++-428055CCC P1dB (d 19 OLATIO -30 B), 18 IS -40 d AIN ( 17 GP1adinB -50 G Psat 16 -60 4.5 5 5.5 4 6 8 10 12 14 16 18 20 Vdd (V) FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 3 Application Support: Phone: 1-800-ANALOG-D

HMC451LP3 / 451LP3E v01.0118 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd = Vdd 1 2 Drain Bias Voltage (Vdd = Vdd) +5.5V Vdd = Vdd (V) idd + idd (mA) 1 2 1 2 1 2 rf input power (rfin)(Vdd = +5Vdc) +10 dBm +4.5 120 T Channel Temperature 175 °C +5.0 122 m Continuous pdiss (T = 85 °C) +5.5 124 1.15 w s (derate 12.8 mw/°C above 85 °C) note: Amplifier will operate over full voltage range shown above Thermal resistance - 78 °C/w (channel to ground paddle) r storage Temperature -65 to +150 °C e eleCTrosTATiC sensiTiVe DeViCe operating Temperature -40 to +85 °C w oBserVe HAnDlinG preCAUTions esD sensitivity (HBm) Class 1A, passed 250V o 16-Lead Lead Frame Chip Scale Package [LFCSP] p 3 x 3 mm Body and 0.85 mm Package Height (HCP-16-1) Outline Drawing Dimensions shown in millimeters & r DETAIL A A (JEDEC 95) 3.10 0.30 e 3.00 SQ 0.25 n PIN 1 2.90 0.20 i INDICATOR PIN 1 l 0.50 13 16 I(NSEDEIC DAETTAOIRL AA)R EA OPTIONS BSC 12 1 - EXPOSED 1.95 s PAD 1.70 SQ r 1.50 e 9 4 i f TOP VIEW 00..4450 8BOTTOM VIEW5 0.20 MIN li 0.35 p 0.90 FOR PROPER CONNECTION OF m THE EXPOSED PAD, REFER TO 0.85 0.05 MAX THE PIN CONFIGURATION AND 0.80 0.02 NOM FUNCTION DESCRIPTIONS A SECTION OF THIS DATA SHEET. COPLANARITY SEATING 0.08 PLANE 0.20 REF B PKG-004863 COMPLIANT WITH JEDEC STANDARDS MO-220-VEED-4. 03-15-2017- 16-lead lead frame chip scale package [lfCsp] 3 mm × 3 mm Body and 0.85 mm package Height (HCp-16-1) Dimensions shown in millimeters. Package Information part number package Body material lead finish msl rating package marking [3] HmC451lp3 low stress injection molded plastic sn/pb solder msl1 [1] 451 XXXX HmC451lp3e roHs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 451 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 4 Application Support: Phone: 1-800-ANALOG-D

HMC451LP3 / 451LP3E v01.0118 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Pin Descriptions pin number function Description interface schematic T 1, 2, 4 - 9, 11, This pin may be connected to rf/DC ground. n/C 12, 14, 16 performance will not be affected. m This pin is AC coupled 3 rfin s and matched to 50 ohms. This pin is AC coupled - 10 rfoUT and matched to 50 ohms. r e w power supply Voltage for the amplifier. external bypass 13 Vdd2 capacitors of 100 pf, 1,000 pf and 2.2 µf are required. o p & r power supply Voltage for the amplifier. external bypass 15 Vdd1 A capacitors of 100 pf, 1,000 pf and 2.2 µf are required. e n i l GnD package bottom must be connected to rf/DC ground. - s r e Application Circuit i f i Component Value l p C1, C2 100 pf m C3, C4 1,000 pf A C5, C6 2.2 µf For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 5 Application Support: Phone: 1-800-ANALOG-D

HMC451LP3 / 451LP3E v01.0118 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Evaluation PCB T m s - r e w o p & r A e n i l - s r e i f i l p m A List of Materials for Evaluation PCB 120202 [1] The circuit board used in the application should item Description use rf circuit design techniques. signal lines should J1 - J2 pCB mount smA Connector have 50 ohm impedance while the package ground J3 - J5 DC pin leads and exposed paddle should be connected C1, C2 100 pf Capacitor, 0402 pkg. directly to the ground plane similar to that shown. C3, C4 1000 pf Capacitor, 0603 pkg. A sufficient number of via holes should be used C5, C6 2.2 µf Capacitor, Tantalum to connect the top and bottom ground planes. The U1 HmC451lp3(e) Amplifier evaluation board should be mounted to an appropri- pCB [2] 120201 evaluation pCB ate heat sink. The evaluation circuit board shown is [1] reference this number when ordering complete evaluation pCB available from Analog Devices, upon request. [2] Circuit Board material: Arlon 25fr For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 6 Application Support: Phone: 1-800-ANALOG-D

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: HMC451LP3E HMC451LP3ETR HMC451LP3