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  • 型号: HMC406MS8GE
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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产品参数

参数 数值
产品目录 射频/IF 和 RFID
描述 IC PWR AMP HBT INGAP 8-MSOP
产品分类 RF 放大器
品牌 Hittite Microwave Corporation
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产品图片
P1dB 27dBm
产品型号 HMC406MS8GE
RF类型 WiMax,WLAN
rohs 无铅 / 符合限制有害物质指令(RoHS)规范要求
产品系列 -
供应商器件封装 8-TSSOP
其它名称 1127-1369
包装 剪带
噪声系数 6dB
增益 17dB
封装/外壳 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
标准包装 100
测试频率 5.8GHz
电压-电源 5V
电流-电源 300mA
频率 5GHz ~ 6GHz

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HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications Features The HmC406ms8G(e) is ideal for: Gain: 17 dB T • WiMAX & WiLAN saturated power: +29 dBm m • DSRC 38% pAe s • Military & Maritime supply Voltage: +5V - r • Private Mobile Radio power Down Capability e • UNII & ISM low external part Count w o p Functional Diagram General Description & r The HmC406ms8G(e) is a high efficiency GaAs A inGap Heterojunction Bipolar Transistor (HBT) mmiC e power amplifier which operates between 5 and 6 n GHz. The amplifier is packaged in a low cost, surface i mount 8 leaded package with an exposed base l for improved rf and thermal performance. with - a minimum of external components, the amplifier s r provides 17 dB of gain and +29 dBm of saturated e power at 38% pAe from a +5V supply voltage. Vpd i can be used for full power down or rf output power/ f current control. i l p m A Electrical Specifications, T = +25° C, Vs = 5V, Vpd = 5V A parameter min. Typ. max. min. Typ. max. Units frequency range 5 - 6 5.7 - 5.9 GHz Gain 13 16 21 14 17 21 dB Gain Variation over Temperature 0.03 0.04 0.03 0.04 dB/ °C input return loss 10 11 dB output return loss 8 9 dB output power for 1 dB Compression (p1dB) 21 24 24 27 dBm saturated output power (psat) 27 29 dBm output Third order intercept (ip3) 34 38 34 38 dBm noise figure 6.0 6.0 dB supply Current (icq) Vpd = 0V/5V 0.002 / 300 0.002 / 300 mA Control Current (ipd) Vpd = 5V 7 7 mA switching speed ton, toff 35 35 ns InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 22 15 20 T 18 10 m 16 NSE (dB) 05 N (dB) 1124 - s SPO -5 GAI 10 +25 C r RE -10 8 +-4805 CC e 6 -15 S21 w S11 4 -20 S22 2 o -25 0 p 3 4 5 6 7 8 4.5 5 5.5 6 6.5 FREQUENCY (GHz) FREQUENCY (GHz) & r A Input Return Loss vs. Temperature Output Return Loss vs. Temperature e n 0 0 i +25 C l -5 +85 C S (dB) -10 S (dB) -5 -40 C s - OS OS r N L -15 N L e R R ETU -20 ++2855 CC ETU -10 fi R -40 C R i l -25 p -30 -15 m 4.5 5 5.5 6 6.5 4.5 5 5.5 6 6.5 A FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 34 34 30 30 P1dB (dBm) 2226 Psat (dBm) 2226 ++2855 CC -40 C +25 C 18 +85 C 18 -40 C 14 14 4.5 5 5.5 6 6.5 4.5 5 5.5 6 6.5 FREQUENCY (GHz) FREQUENCY (GHz) InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Power Compression @ 5.8 GHz Output IP3 vs. Temperature 42 44 T %) 36 39 m E ( A s B), P 30 m) 34 r - GAIN (d 1284 IP3 (dB 29 ++-428055 CCC e m), 24 B w d 12 o Pout ( 6 GPoauint ((ddBBm)) 19 PAE (%) 14 p 0 4.5 5 5.5 6 6.5 & 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) INPUT POWER (dBm) r A e Noise Figure vs. Temperature Gain & Power vs. Supply Voltage n 10 24 32 li 9 23 31 8 22 30 fiers - NOISE FIGURE (dB) 34567 +25 C GAIN dB) 1112278901 2222256789 P1dB, Psat (dBm li 2 +-4805 CC 16 P1dB 24 ) p 1 15 Gain Psat 23 m 0 14 22 A 4.5 5 5.5 6 6.5 4.75 5 5.25 FREQUENCY (GHz) Vcc SUPPLY VOLTAGE (V) Gain, Power & Quiescent Reverse Isolation vs. Temperature Supply Current vs. Vpd @ 5.8 GHz 0 33 350 m) 30 315 -10 Reverse Isolation B Power Down Isolation at (d 27 280 B) -20 Ps 24 245 ATION (d -30 B (dBm), 1281 Icq 127150 Icq (m ISOL -40 B), P1d 1125 Gain 110450 A) d P1dB -50 GAIN ( 69 Psat 3750 -60 3 0 4.5 5 5.5 6 6.5 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) Vpd (V) InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) +5.5V eleCTrosTATiC sensiTiVe DeViCe Control Voltage (Vpd) +5.5V T OBSERVE HANDLING PRECAUTIONS m rf input power (rfin)(Vs = Vpd = +5V) +20 dBm s Junction Temperature 150 °C Continuous pdiss (T = 85 °C) - 2.1 w (derate 32 mw/°C above 85 °C) r Thermal resistance e 31 °C/w (junction to ground paddle) w storage Temperature -65 to +150 °C o operating Temperature -40 to +85° C p & r Outline Drawing A e n i l - s r e i f i l p m A noTes: 1. leADfrAme mATeriAl: Copper AlloY 2. Dimensions Are in inCHes [millimeTers] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information part number package Body material lead finish msl rating package marking [3] HmC406ms8G low stress injection molded plastic sn/pb solder msl1 [1] H406 XXXX HmC406ms8Ge roHs-compliant low stress injection molded plastic 100% matte sn msl1 [2] H406 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Pin Descriptions pin number function Description interface schematic T m s power Control pin. for maximum power, this pin should be - 1 Vpd connected to 5V. A higher voltage is not recommended. for lower idle current, this voltage can be reduced. r e w Ground: Backside of package has exposed metal ground o 2, 4, 7 GnD slug that must be connected to ground thru a short path. p Vias under the device are required. This pin is AC coupled & 3 rfin and matched to 50 ohms. r A rf output and bias for the output stage. The power supply 5, 6 RFOUT e for the output device needs to be supplied to these pins. n i l power supply voltage for the first amplifier stage. An - external bypass capacitor of 330 pf is required. This 8 Vcc s capacitor should be placed as close to the devices as possible. r e i f i l p m A InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Application Circuit T m s - r e w o p & r A e n i l - s note 1: C3 should be located < 0.020” from pin 8 (Vcc) r note 2: C2 should be located < 0.020” from l1. e i f Tl1 Tl2 Tl3 li impedance 50 ohm 50 ohm 50 ohm p m physical length 0.0443” 0.2556” 0.1000” electrical length @ 5.5 GHz 11.3° 65.2° 25.5° A measurement edge of package pin to Center of capacitor C5 Center of bias line to center of capacitor C5. to center of bias line. edge of capacitor C6. pCB material: 10 mil rogers 4350 or Arlon 25fr InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Evaluation PCB T m s - r e w o p & r A e n i l - s r e i f i l p m A List of Materials for Evaluation PCB 104989 [1] The circuit board used in the application should item Description use rf circuit design techniques. signal lines J1 - J2 pCB mount smA rf Connector should have 50 ohm impedance while the package J3 2mm DC Header ground leads and exposed paddle should be con- C1 - C3 330 pf Capacitor, 0603 pkg. nected directly to the ground plane similar to that C4 2.2 µf Capacitor, Tantalum shown. A sufficient number of via holes should be C5 0.6 pf Capacitor, 0603 pkg. used to connect the top and bottom ground planes. C6 1.6 pf Capacitor, 0603 pkg. The evaluation board should be mounted to an C7 100 pf Capacitor, 0603 pkg. appropriate heat sink. The evaluation circuit board l1 3.9 nH inductor, 0603 pkg. shown is available from Hittite upon request. U1 HmC406ms8G(e) Amplifier pCB [2] 105021 eval Board [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: roger 4350 or Arlon 25fr InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 7 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5ep0re ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Notes: T m s - r e w o p & r A e n i l - s r e i f i l p m A InfoFrmoart iopn rfiucrneis,h edde blyi vAenraylo ga Dnedvic teos ips lbaelcieeve do rtod beer sac:c Huraittet iatned Mreliiacbrleo. wHoawveeve rC, noo rpoForar tpioricne,, 2d eElilviezrayb, aentdh tDo rpivlaec,e C ohrdeelrms: sAfonardlo,g MDeAv i0ce1s8, 2In4c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-l2i9n-e4 7a0t0 w(cid:127) wOrwde.hr oitntliitnee. cato wmww.analog.com 8 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urepsppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D