GP1S094HCZ0F GP1S094HCZ0F Gap : 3mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter ■Description ■Agency approvals/Compliance GP1S094HCZ0F is a compact-package, photo- 1. Compliant with RoHS directive transistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides ■Applications non-contact sensing. The compact package series is 1. Detection of object presence or motion. a result of unique technology combing transfer and 2. Example: printer, lens control for camera injection molding. This device has a wide gap and positioning pins. ■Features 1. Transmissive with phototransistor output 2. Highlights: • Compact Size • Positioning Pin to prevent misalignment 3. Key Parameters: • Gap Width : 3mm • Slit Width (detector side): 0.3mm • Package : 5.5×2.6×4.8mm 4. RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device. Sheet No.: D3-A00601FEN 1 Date Oct. 3. 2005 © SHARP Corporation

GP1S094HCZ0F ■Internal Connection Diagram Top view 2 1 1 Anode 2 Collector 3 Emitter 4 Cathode 3 4 ■Outline Dimensions (Unit : mm) Top view a' (C0.3) a 5.5 a-a' section 75) 3 (C0.4) 2.6 (0.3)Slit width 0. ( Center of light axis 3 8 (C0.3) 4. ∗∗ ∗∗ 0.8 C0.2 0.3+3.10.2− 0.2±3 00..45 ∗4.55 0.15+−00..21 ∗2 (0.05) 0.05±5 φ1−+00. 1 ∗∗∗ 7 3 0. 4 • Unspecifi ed tolerance : ±0.2mm • Dimensions in parenthesis are shown for reference. • The dimensions indicated by ∗ refer to those 2 1 measured from the lead base. • The dimensions shown do not include burr. Burr's dimension shall be : 0.15mm MAX. • ∗∗ The lead may be exposed at the shaded portion. • ∗∗∗ This portion has no SnCu plating. Product mass : approx. 0.085g Plating material : SnCu (Cu : TYP. 2%) Country of origin Japan Sheet No.: D3-A00601FEN 2

GP1S094HCZ0F ■Absolute Maximum Ratings (Ta=25˚C ) Parameter Symbol Rating Unit Forward current I 50 mA F Input Reverse voltage V 6 V R Power dissipation P 75 mW Collector-emitter voltage V 35 V CEO Emitter-collector voltage V 6 V Output ECO Collector current I 20 mA C Collector power dissipation P 75 mW C Total power dissipation P 100 mW tot Operating temperature Topr −25 to +85 ˚C 1mm or more Storage temperature Tstg −40 to +100 ˚C Soldering area ∗1Soldering temperature T 260 ˚C sol ∗1 For 5s or less ■Electro-optical Characteristics (Ta=25˚C ) Parameter Symbol Condition MIN. TYP. MAX. Unit Input Forward voltage VF IF=20mA − 1.2 1.4 V Reverse current IR VR=3V − − 10 μA Output Collector dark current ICEO VCE=20V − − 100 nA Transfer Collector current IC VCE=5V, IF=5mA 40 − 400 μA charac- Collector-emitter saturation voltage VCE(sat) IF=10mA, IC=40μA − − 0.4 V teristics Response time RFiaslel ttiimmee ttrf VCE=5V, IC=100μA, RL=1kΩ −− 5500 115500 μμss Sheet No.: D3-A00601FEN 3

GP1S094HCZ0F Fig.1 Forward Current vs. Fig.2 Power Dissipation vs. Ambient Temperature Ambient Temperature 60 120 P 50 100 tot W) ent I (mA)F 40 P, P, P (mctot 8705 P, Pc d curr 30 ation 60 orwar 20 dissip 40 F er w o 10 P 20 15 0 0 (cid:13)25 0 25 50 75 85 100 −25 0 25 50 75 85 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.3 Forward Current vs. Forward Voltage Fig.4 Collector Current vs. Forward Current VCE=5V 1 Ta(cid:29)75˚C 25˚C Ta =25˚C 0˚C 50˚C (cid:13)25˚C A) 100 A) 0.8 m m nt I (F nt I (c 0.6 urre urre Forward c 10 Collector c 0.4 0.2 1 0 0 0.5 1 1.5 2 2.5 3 0 10 20 Forward voltage VF (V) Forward current IF (mA) Fig.5 Collector Current vs. Fig.6 Relative Collector Current vs. Collector-emitter Voltage Ambient Temperature 120 I(cid:29)5mA 1 110 F V (cid:29)5V IF=50mA 100 CE mA) 0.8 40mA nt (%) 9800 Collector current I (C 00..46 132000mmmAAA Relative collector curre 7654300000 0.2 20 5mA 10 0 0 0 2 4 6 8 10 (cid:13)25 0 25 50 75 85 Collector-emitter voltage VCE (V) Ambient temperature Ta (˚C) Sheet No.: D3-A00601FEN 4

GP1S094HCZ0F Fig.7 Collector-emitter Saturation Voltage vs. Fig.8 Collector Dark Current vs. Ambient Temperature Ambient Temperature 0.2 10(cid:13)6 V) IF=10mA VCE(cid:29)20V age V (CE(sat) 00..1168 IC=40μA (A)CEO 10(cid:13)7 aturation volt 00..1124 Dark current I 10(cid:13)8 er s 0.1 or ctor-emitt 0.08 Collect 10(cid:13)9 e 0.06 oll C 10(cid:13)10 −25 0 25 50 75 85 0 25 50 75 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.9 Response Time vs. Load Resistance Fig.10 Test Circuit for Response Time 1 000 V (cid:29)5V CE I (cid:29)100(cid:77)A C V Input CC RD RL 100 t Input Output Output 10% s) f (cid:77) 90% e ( t m r onse ti td tdtr ts tf p es 10 R t s 1 0.1 1 10 100 Load resistance R (k(cid:55)) L Fig.11 Detecting Position Characteristics (1) Fig.12 Detecting Position Characteristics (2) 100 100 IF=5mA IF=5mA 90 VLC=E0=5VL 90 VCE=5V 80 80 L %) %) L=0 nt ( 70 nt ( 70 urre 60 urre 60 or c 50 or c 50 ollect 40 ollect 40 Relative c 2300 Relative c 2300 10 10 0 0 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 Shield moving distance L (mm) Shield moving distance L (mm) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A00601FEN 5

GP1S094HCZ0F ■Design Considerations ●Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 1.6mm or more from the top of elements. (Example) 1.6mm or more 1.6mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ●Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ●Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Maximum Sensitivity Sensitivity Category Material Response time (μs) wavelength (nm) wavelength (nm) Phototransistor Silicon (Si) 930 700 to 1 200 20 • Photo emitter (qty. : 1) Maximum light emitting Category Material I/O Frequency (MHz) wavelength (nm) Infrared emitting diode Gallium arsenide (GaAs) 950 0.3 (non-coherent) • Material Case Lead frame Lead frame plating Black polyphernylene 42Alloy SnCu plating sulfi de resin (UL94 V-0) Sheet No.: D3-A00601FEN 6

GP1S094HCZ0F ■Manufacturing Guidelines ●Soldering Method Flow Soldering: Soldering should be completed below 260˚C and within 5 s. Please solder within one time. Soldering area is 1mm or more away from the bottom of housing. Please take care not to let any extcrhal force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by refl ow. Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature. Other notice Please take care not to let any external force exert on lead pins. Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. ●Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : Do not execute ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ●Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A00601FEN 7

GP1S094HCZ0F ■Package specifi cation ●Sleeve package Package materials Sleeve : Polyphernylene Stopper : Styrene-Elastomer Package method MAX. 100 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves in one case. Sheet No.: D3-A00601FEN 8

GP1S094HCZ0F ■Important Notices · The circuit application examples in this publication with equipment that requires higher reliability such as: are provided to explain representative applications of --- Transportation control and safety equipment (i.e., SHARP devices and are not intended to guarantee any aircraft, trains, automobiles, etc.) circuit design or license any intellectual property rights. --- Traffi c signals SHARP takes no responsibility for any problems related --- Gas leakage sensor breakers to any intellectual property right of a third party resulting --- Alarm equipment from the use of SHARP's devices. --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in · Contact SHARP in order to obtain the latest device connection with equipment that requires an extremely specification sheets before using any SHARP device. high level of reliability and safety such as: SHARP reserves the right to make changes in the --- Space applications specifi cations, characteristics, data, materials, structure, --- Telecommunication equipment [trunk lines] and other contents described herein at any time --- Nuclear power control equipment without notice in order to improve design or reliability. --- Medical and other life support equipment (e.g., Manufacturing locations are also subject to change scuba). without notice. · If the SHARP devices listed in this publication fall · Observe the following points when using any devices within the scope of strategic products described in the in this publication. SHARP takes no responsibility for Foreign Exchange and Foreign Trade Law of Japan, it damage caused by improper use of the devices which is necessary to obtain approval to export such SHARP does not meet the conditions and absolute maximum devices. ratings to be used specifi ed in the relevant specifi cation sheet nor meet the following conditions: · This publication is the proprietary product of SHARP (i) The devices in this publication are designed for use and is copyrighted, with all rights reserved. Under in general electronic equipment designs such as: the copyright laws, no part of this publication may be --- Personal computers reproduced or transmitted in any form or by any means, --- Offi ce automation equipment electronic or mechanical, for any purpose, in whole or in --- Telecommunication equipment [terminal] part, without the express written permission of SHARP. --- Test and measurement equipment Express written permission is also required before any --- Industrial control use of this publication may be made by a third party. --- Audio visual equipment --- Consumer electronics · Contact and consult with a SHARP representative (ii) Measures such as fail-safe function and redundant if there are any questions about the contents of this design should be taken to ensure reliability and safety publication. when SHARP devices are used for or in connection [H127] Sheet No.: D3-A00601FEN 9

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