FGP50B, FGP50C, FGP50D www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER® • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability GP20 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectification and freewheeling I 5.0 A F(AV) application in switching mode converters and inverters for V 100 V, 150 V, 200 V RRM consumer, computer, automotive and telecommunication. I 135 A FSM trr 35 ns MECHANICAL DATA VF 0.95 V Case: GP20, molded epoxy over glass body I 5.0 μA Molding compound meets UL 94 V-0 flammability rating R Base P/N-E3 - RoHS-compliant, commercial grade T max. 175 °C J Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Package GP20 Terminals: Matte tin plated leads, solderable per Diode variations Single die J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL FGP50B FGP50C FGP50D UNIT Maximum repetitive peak reverse voltage V 100 150 200 V RRM Maximum RMS voltage V 70 105 140 V RMS Maximum DC blocking voltage V 100 150 200 V DC Maximum average forward rectified current I 5.0 A 0.375" (9.5 mm) lead length (fig. 1) F(AV) Peak forward surge current 8.3 ms single half sine-wave I 135 A superimposed on rated load FSM Operating junction and storage temperature range T , T - 65 to + 175 °C J STG Revision: 12-Dec-13 1 Document Number: 88879 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

FGP50B, FGP50C, FGP50D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL FGP50B FGP50C FGP50D UNIT Maximum instantaneous 5.0 A V (1) 0.95 V forward voltage F Maximum DC reverse current TA = 25 °C 5.0 I μA at rated DC blocking voltage T = 100 °C R 50 A Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, t 35 ns I = 0.25 A rr rr Typical junction capacitance 4.0 V, 1 MHz C 100 pF J Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL FGP50B FGP50C FGP50D UNIT R (1) 60 JA Typical thermal resistance °C/W R (2) 20 JL Notes (1) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks (2) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length and mounted on PCB ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE FGP50D-E3/54 1.01 54 1400 13" diameter paper tape and reel FGP50D-E3/73 1.01 73 2000 Ammo pack packaging FGP50DHE3/54 (1) 1.01 54 1400 13" diameter paper tape and reel FGP50DHE3/73 (1) 1.01 73 2000 Ammo pack packaging Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 6 175 )At (nreurCd e 45 30 mm x 30 mm Copper Heatsinks Current (A) 115205 8.3 ms STinJg =le T HJ aMlfa Sxi.ne-Wave fitiecR 3 Surge 100 d d 75 ra ar w 2 w ro or 50 F F e k agre 1 Pea 25 v A 0 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 12-Dec-13 2 Document Number: 88879 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

FGP50B, FGP50C, FGP50D www.vishay.com Vishay General Semiconductor 100 1000 A) Current ( 10 TJ = 150 °CTJ = 175 °C )Fp( ec 100 orward 1 TJ = 125 °C naticap F a us C n o T = 25 °C o 10 ane 0.1 J itcn stant PulseT WJ i=d t2h5 = ° C300 μs uJ n I 1 % Duty Cycle 0.01 1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance   100  T = 175 °C e J  g ka 10 TJ = 150 °C  a ous Reverse LeCurrent (μA) 0.11 TJ = 125 °C  e antan 0.01 TJ = 25 °C  st n  I  0.001 0 20 40 60 80 100  Percent of Rated Peak Reverse Voltage (%)   Fig. 4 - Typical Reverse Leakage Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) GP20 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.037 (0.94) DIA. Revision: 12-Dec-13 3 Document Number: 88879 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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