DSS 10-0045B Power Schottky Rectifier I = 10 A FAV V = 45 V RRM V = 0.46 V F TO-220 AC V V Type A C RSM RRM V V C 45 45 DSS 10-0045B A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features • International standard package I 35 A FRMS (cid:127) Very low V I T = 135°C; rectangular, d = 0.5 10 A F FAV C (cid:127) Extremely low switching losses I T = 45°C; t = 10 ms (50 Hz), sine 160 A (cid:127) Low I -values FSM VJ p (cid:127) EpoxyR mMeets UL 94V-0 E I = 13 A; L = 180 µH; T = 25°C; non repetitive 24 mJ AS AS VJ I V =1.5 (cid:127)V typ.; f=10 kHz; repetitive 1.3 A AR A RRM Applications (dv/dt) 1000 V/µs (cid:127) Rectifiers in switch mode power cr supplies (SMPS) TVJ -55...+150 °C (cid:127) Free wheeling diode in low voltage TVJM 150 °C converters T -55...+150 °C stg P T = 25°C 75 W tot C Advantages M mounting torque 0.4...0.6 Nm (cid:127) High reliability circuit operation d (cid:127) Low voltage peaks for reduced Weight typical 2 g protection circuits (cid:127) Low noise switching (cid:127) Low losses Symbol Conditions Characteristic Values typ. max. Dimensions see Outlines.pdf I (cid:99) T = 25°C V = V 5 mA R VJ R RRM T = 100°C V = V 50 mA VJ R RRM V I = 10 A; T = 125°C 0.46 V F F VJ I = 10 A; T = 25°C 0.51 V F VJ I = 20 A; T = 125°C 0.64 V F VJ R 1.7 K/W thJC R 0.5 K/W thCH Pulse test: (cid:99) Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 8 3 3 © 2003 IXYS All rights reserved 1 - 2

DSS 10-0045B 100 1000 1000 mA A T =150°C pF VJ 100 I IR 125°C CT F 10 100°C 10 1 75°C TVJ = 50°C 150°C 0.1 125°C 25°C 25°C T = 25°C VJ 1 0.01 100 0.0 0.2 0.4 0.6 0.8 V 1.0 0 10 20 30 40 V 50 0 10 20 30 40V V V V F R R Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 40 40 W A A 30 30 I I FSM F(AV) P (AV) d=0.5 DC 20 20 d = DC 0.5 10 10 0.33 0.25 0.17 0.08 0 0 0 40 80 120 °C 160 0 10 20 30 A µs T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 1 D=0.5 K/W 0.33 0.25 ZthJC 0.17 0.08 0.1 Single Pulse 0.01 DSS 10-0045B 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode © 2003 IXYS All rights reserved 2 - 2

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