DSI30-12A = Standard Rectifier V 1200V RRM = I 30A FAV = V 1.25V F Single Diode Part number DSI30-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Diode for main rectification ● Industry standard outline ● Very low leakage current ● For single and three phase ● RoHS compliant ● Very low forward voltage drop bridge configurations ● Epoxy meets UL 94V-0 ● Improved thermal behaviour Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c ©2019 IXYS all rights reserved

DSI30-12A Rectifier Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 1300 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 1200 V RRM VJ I reverse current V = 1 2 0 0 V T = 25°C 40 µA R R VJ V = 1 2 0 0 V T = 1 5 0 °C 1.5 mA R VJ V forward voltage drop I = 3 0 A T = 25°C 1.29 V F F VJ I = 6 0 A 1.60 V F I = 3 0 A T = 1 5 0 °C 1.25 V F VJ I = 6 0 A 1.66 V F I average forward current T = 1 3 0 °C T = 1 7 5 °C 30 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 0.82 V F0 VJ for power loss calculation only r slope resistance 14.1 mΩ F R thermal resistance junction to case 0.9 K/W thJC R thermal resistance case to heatsink 0.5 K/W thCH P total power dissipation T = 25°C 160 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine T = 45°C 300 A FSM VJ t = 8,3 ms; (60 Hz), sine V = 0 V 325 A R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 255 A VJ t = 8,3 ms; (60 Hz), sine V = 0 V 275 A R I²t value for fusing t = 10 ms; (50 Hz), sine T = 45°C 450 A²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 440 A²s R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 325 A²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 315 A²s R C junction capacitance V = 4 0 0 V; f = 1 MHz T = 25°C 10 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c ©2019 IXYS all rights reserved

DSI30-12A Package TO-220 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 35 A RMS T virtual junction temperature -40 175 °C VJ T operation temperature -40 150 °C op T storage temperature -40 150 °C stg Weight 2 g M mounting torque 0.4 0.6 Nm D F mounting force with clip 20 60 N C Product Marking Part Number XXXXXX Logo yywwZ Date Code Lot # 123456 Location Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard DSI30-12A DSI30-12A Tube 50 476390 Similar Part Package Voltage class DSI30-08A TO-220AC (2) 800 DSI30-08AS TO-263AB (D2Pak) (2) 800 DSI30-08AC ISOPLUS220AC (2) 800 DSI30-12AS TO-263AB (D2Pak) (2) 1200 DSI30-12AC ISOPLUS220AC (2) 1200 DSI30-16A TO-220AC (2) 1600 DSI30-16AS TO-263AB (D2Pak) (2) 1600 Equivalent Circuits for Simulation * on die level T V J =175°C I V R Rectifier 0 0 V threshold voltage 0.82 V 0 max R slope resistance * 11 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c ©2019 IXYS all rights reserved

DSI30-12A Outlines TO-220 A Dim. Millimeter Inches = supplier option Min. Max. Min. Max. A1 E Q A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 1 A2 2.29 2.79 0.090 0.110 ØP H 4 b 0.64 1.01 0.025 0.040 D b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 1 3 D 14.73 16.00 0.580 0.630 1 E 9.91 10.66 0.390 0.420 2x b2 L e 5.08 BSC 0.200 BSC L H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 2x b C ØP 3.54 4.08 0.139 0.161 e A2 Q 2.54 3.18 0.100 0.125 3 1 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c ©2019 IXYS all rights reserved

DSI30-12A Rectifier 60 250 500 50Hz,80%VRRM VR=0V 50 400 40 200 IF IFSM TVJ=45°C 300 T =45°C VJ 30 I2t [A] [A] 200 20 TVJ=125°C 150 [A2s] TVJ=150°C 150°C T =150°C VJ 100 10 T =25°C VJ 0 100 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.001 0.01 0.1 1 1 2 3 4 5 6 78910 V [V] t [s] t [ms] F Fig.1 Forwardcurrentversus Fig.2 Surgeoverloadcurrent Fig.3 I2tversustimeperdiode voltagedropperdiode 50 40 R : thHA 0.6K/W 0.8K/W 40 DC= 1K/W 1 2K/W 30 0.5 4K/W 0.4 8K/W P 30 0.33 I tot F(AV)M 0.17 DC= 20 0.08 1 [W]20 [A] 0.5 0.4 0.33 10 0.17 10 0.08 0 0 0 10 20 30 0 50 100 150 200 0 50 100 150 200 I [A] T [°C] T [°C] F(AV)M amb C Fig.4 Powerdissipationvs.directoutputcurrentandambienttemperature Fig.5 Max.forwardcurrentvs. casetemperature 1.0 0.8 ConstantsforZ calculation: 0.6 thJC i R (K/W) t (s) Z thi i thJC 1 0.03 0.0004 0.4 [K/W] 2 0.08 0.002 3 0.2 0.003 0.2 4 0.39 0.03 5 0.2 0.29 0.0 1 10 100 1000 10000 t [ms] Fig.6 Transientthermalimpedancejunctiontocase IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c ©2019 IXYS all rights reserved