DSI2x55-12A Standard Rectifier V = 1200V RRM I =2x 60A FAV V = 1.22V F Parallel legs Part number DSI2x55-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Diode for main rectification ● Isolation Voltage: 3 0 0 0 V~ ● Very low leakage current ● For single and three phase ● Industry standard outline ● Very low forward voltage drop bridge configurations ● RoHS compliant ● Improved thermal behaviour ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130307b ©2013 IXYS all rights reserved

DSI2x55-12A Rectifier Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 1300 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 1200 V RRM VJ I reverse current, drain current V = 1 2 0 0 V T = 25°C 100 µA R R VJ V = 1 2 0 0 V T = 1 5 0 °C 1.5 mA R VJ V forward voltage drop I = 6 0 A T = 25°C 1.26 V F F VJ I = 1 2 0 A 1.54 V F I = 6 0 A T = 1 2 5 °C 1.22 V F VJ I = 1 2 0 A 1.58 V F I average forward current T = 9 5 °C T = 1 5 0 °C 60 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 5 0 °C 0.83 V F0 VJ for power loss calculation only r slope resistance 6.2 mΩ F R thermal resistance junction to case 0.6 K/W thJC R thermal resistance case to heatsink 0.10 K/W thCH P total power dissipation T = 25°C 210 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine T = 45°C 800 A FSM VJ t = 8,3 ms; (60 Hz), sine V = 0 V 865 A R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 680 A VJ t = 8,3 ms; (60 Hz), sine V = 0 V 735 A R I²t value for fusing t = 10 ms; (50 Hz), sine T = 45°C 3.20 kA²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 3.12 kA²s R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 2.31 kA²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 2.25 kA²s R C junction capacitance V = 4 0 0 V; f = 1 MHz T = 25°C 25 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130307b ©2013 IXYS all rights reserved

DSI2x55-12A Package SOT-227B (minibloc) Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 150 A RMS T storage temperature -40 150 °C stg T virtual junction temperature -40 150 °C VJ Weight 30 g M mounting torque 1.1 1.5 Nm D M terminal torque 1.1 1.5 Nm T d terminal to terminal 10.5 3.2 mm Spp/App creepage distance on surface | striking distance through air d terminal to backside 8.6 6.8 mm Spb/Apb V isolation voltage t = 1 second 3000 V ISOL 50/60 Hz, RMS; II S O L ≤ 1 mA t = 1 minute 2500 V Product Marking Logo abcde Part No. YYWWZ XXXXXX DateCode Assembly Code Assembly Line Ordering Part Number Marking on Product Delivery Mode Quantity Code No. Standard DSI2x55-12A DSI2x55-12A Tube 10 477052 Similar Part Package Voltage class DSI2x55-16A SOT-227B (minibloc) 1600 Equivalent Circuits for Simulation * on die level T V J =150°C I V R Rectifier 0 0 V threshold voltage 0.83 V 0 max R slope resistance * 4.3 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130307b ©2013 IXYS all rights reserved

DSI2x55-12A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130307b ©2013 IXYS all rights reserved

DSI2x55-12A Rectifier 120 700 104 50Hz,80% V V = 0 V RRM R 100 600 T =45°C 80 T =45°C VJ VJ I I 500 F FSM I2t T =150°C 60 103 VJ [A] [A] 400 T =150°C [A2s] 40 VJ T =125°C VJ 150°C 300 20 T =125°C VJ 0 200 102 0.4 0.8 1.2 1.6 0.001 0.01 0.1 1 1 2 3 4 5 6 78910 V [V] t [s] t [ms] F Fig.1 Forwardcurrentversus Fig.2 Surgeoverloadcurrent Fig.3 I2tversustimeperdiode voltagedropperdiode 160 dc = R : thHA 1 0.2K/W 60 0.5 0.4K/W dc = 0.4 0.6K/W 120 1 0.33 0.8K/W 0.5 0.17 1.0K/W 0.4 40 0.08 2.0K/W I 0.33 Ptot F(AV)M80 00..1078 [A] [W] 20 40 0 0 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 I [A] T [°C] T [°C] F(AV)M amb C Fig.4 Powerdissipationvs.directoutputcurrent&ambienttemperature Fig.5 Max.forwardcurrent versuscasetemperature 0.7 0.6 Z thJC ConstantsforZ calculation: thJC 0.4 i R (K/W) t (s) thi i [K/W] 1 0.031 0.00024 2 0.0554 0.0036 0.2 3 0.114 0.0235 4 0.281 0.142 5 0.1686 0.7 0.0 1 10 100 1000 10000 t [ms] Fig.6Transientthermalimpedancejunctiontocase IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130307b ©2013 IXYS all rights reserved

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