DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary Features • DIOFET utilizes a unique patented process to monolithically V(BR)DSS RDS(ON) Package TA = I+D2 5°C in tegrLaotew a R MDOS(SONF)E –T m ainndim ai zSec choonttdkuy cintio an sloinsgslees d ie to deliver: 10mΩ @ VGS = 10V POWERDI 12A  Low VSD – reducing the losses due to body diode conduction 30V 3333-8  Low Qrr – lower Qrr of the integrated Schottky reduces body 15mΩ @ VGS = 4.5V 9.5A diode switching losses  Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot through or cross conduction currents at high frequencies Description • Small form factor thermally efficient package enables higher density end products This MOSFET is designed to minimize on-state resistance (RDS(on)) • Occupies just 33% of the board area occupied by SO-8, enabling and yet maintain superior switching performance, making it ideal for smaller end product high efficiency power management applications. • 100% UIS (Avalanche) rated • 100% Rg tested • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Applications • Halogen and Antimony Free. “Green” Device (Note 3) • Backlighting • Qualified to AEC-Q101 Standards for High Reliability • Power Management Functions • DC-DC Converters Mechanical Data • Case: POWERDI3333-8 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (approximate) Drain S S Pin 1 8 7 6 5 S G Gate D D D Source D Top View Bottom View 1 T2op V3iew4 Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMS3012SFG-7 POWERDI3333-8 2000/Tape & Reel DMS3012SFG-13 POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG 1 of 8 July 2014 Document number: DS35441 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

DMS3012SFG Marking Information W W N12 = Product Type Marking Code Y YYWW = Date Code Marking Y YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) N12 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V SStetaatdey TTAA == ++2750°°CC ID 91.25 A Continuous Drain Current (Note 6) VGS = 10V t < 10s TTAA == ++7205°°CC ID 1162..07 A SStetaatdey TTAA == ++2750°°CC ID 97..55 A Continuous Drain Current (Note 6) VGS = 4.5V t < 10s TTAA == ++2750°°CC ID 1130..03 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 90 A Maximum Continuous Body Diode Forward Current (Note 6) IS 3.5 A Avalanche Current (Note 7) L = 0.1mH IAS 17 A Avalanche Energy (Note 7) L = 0.1mH EAS 43 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TTAA == ++7205°°CC PD 00..8595 W Steady state 145 Thermal Resistance, Junction to Ambient (Note 5) t < 10s RθJA 74 °C/W Total Power Dissipation (Note 6) TTAA == ++7205°°CC PD 21..23 W Steady State 58 Thermal Resistance, Junction to Ambient (Note 6) t < 10s RθJA 31 °C/W Thermal Resistance, Junction to Case (Note 6) RθJC 11 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG 2 of 8 July 2014 Document number: DS35441 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

DMS3012SFG 100 100 90 W) SRiθnJgAl e= P6u1l°sCe/W R ( 80 RθJA(t) = r(t) * RθJA A) 10 WE TJ - TA = P * RθJA(t) T ( OI 70 REN T P 60 R N CU 1 SIE 50 N N AI RA 40 R T D K -I, D0.1 PEA 30 , K) 20 P P( 10 0.01 0 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1,000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec) Fig. 1 SOA, Safe Operation Area Fig. 2 Single Pulse Maximum Power Dissipation 1 D = 0.9 E D = 0.7 NC D = 0.5 TA D = 0.3 S ESI AL R 0.1 D = 0.1 RM D = 0.05 E H T T D = 0.02 N E 0.01 SI D = 0.01 N A R D = 0.005 RθJA(t) = r(t) * RθJA r(t), T D = Single Pulse RDθuJtAy C= y6c1le°C, D/W = t1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG 3 of 8 July 2014 Document number: DS35441 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

DMS3012SFG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 100 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 1.5 2.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) —— 71.03 1105 mΩ VVGGSS == 14.05VV, , IIDD = = 1131.A5A Forward Transfer Admittance |Yfs| — 30 — S VDS = 5V, ID = 10.0A Diode Forward Voltage VSD — 0.45 0.55 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 1296 4310 pF OReuvtpeurst eC Tapraancsitfaenr cCea pacitance CCorssss —— 421054 —— ppFF Vf =D S1 .=0 M15HVz, VGS = 0V, Gate Resistance Rg 0.26 1.6 2.6 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg — 14.7 — nC Total Gate Charge VGS = 10V Qg — 31.6 — nC Gate-Source Charge Qgs — 3.5 — nC VDS = 15V, VGS = 10V, ID = 13.5A Gate-Drain Charge Qgd — 5.0 — nC Turn-On Delay Time tD(on) — 15.8 — ns Turn-On Rise Time tr — 27.8 — ns VGS = 10V, VDS = 15V, Turn-Off Delay Time tD(off) — 29.7 — ns RG = 3Ω, ID = 8.8A Turn-Off Fall Time tf — 13.6 — ns Reverse Recovery Time trr — 13.1 — ns IF = 13.5A, di/dt = 100A/μs Reverse Recovery Charge Qrr — 4.3 — nC IF = 13.5A, di/dt = 100A/μs Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 30 30 VGS = 4.5V 25 25 VDS = 5V A) A) T (20 T (20 EN VGS = 4.0V EN R R N CUR15 VGVSG S= =3 .30.V5V N CUR15 VGS = 150°C AI AI R10 R VGS = 125°C D D10 I, D VGS = 2.5V I, D VGS = 85°C 5 5 VGS = 25°C VGS = 2.0V VGS = -55°C 0 0 0 0.5 1 1.5 2 1.0 1.5 2.0 2.5 3.0 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 4 Typical Output Characteristic Fig. 5 Typical Transfer Characteristic POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG 4 of 8 July 2014 Document number: DS35441 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

DMS3012SFG Ω) 0.05 Ω) CE ( CE ( VGS = 10V N N A 0.04 A ST ST TA = 150°C SI SI E E R VGS = 2.5V R N- 0.03 N- TA = 125°C O O E E TA = 85°C C C R R U U O 0.02 O TA = 25°C S S N- N- RAI VGS = 4.5V RAI TA = -55°C D 0.01 D , ON) , N) DS( VGS = 10V S(O R D 0 R 0 5 10 15 20 25 30 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A) Fig. 6 Typical On-Resistance Fig. 7 Typical On-Resistance vs. Drain Current and Gate Voltage vs. Drain Current and Temperature 1.6 0.03 ΩΩ)) VGS = 10V E (E ( D) ID = 5A NCNC E1.4 AA RCE MALIZ VGS = 10V ESISTESIST0.02 , DRAIN-SOUONSTANCE (NOR11..02 ID = 10A SOURCE ON-RSOURCE ON-R VIGDS = = 1 100AV RDSRESI AIN-AIN-0.01 VGS = 10V N-0.8 DRDR ID = 5A O , , NN OO SS DD RR 0.6 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature Fig. 9 On-Resistance Variation with Temperature 3.0 30 V) E ( 2.5 25 G A LT A) D VO 2.0 ENT (20 L R O R H U RES 1.5 ID = 1mA E C15 TA = 25°C H C T R TE 1.0 ID = 250µA OU10 A S , GH) I, S T 0.5 5 S( G V 0 0 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 T , AMBIENT TEMPERATURE (°C) V , SOURCE-DRAIN VOLTAGE (V) A SD Fig. 10 Gate Threshold Variation vs. Ambient Temperature Fig. 11 Diode Forward Voltage vs. Current POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG 5 of 8 July 2014 Document number: DS35441 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

DMS3012SFG 10,000 10,000 f = 1MHz µA) TA = 150°C F) NT (1,000 CE (p RRE TA = 125°C N U CITA 1,000 Ciss GE C 100 TA = 85°C A A P K A A C E C, Coss , LSS 10 D I Crss TA = 25°C 100 1 0 5 10 15 20 0 10 20 30 V , DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS DS Fig. 12 Typical Total Capacitance Fig. 13 Typical Leakage Current vs. Drain-Source Voltage 10 V) 8 E( G A T L O 6 VDS = 15V E V ID = 13.5A C R U O 4 S E- T A G , S 2 G V 0 0 5 10 15 20 25 30 35 Q , TOTAL GATE CHARGE (nC) g Fig. 14 Gate-Source Voltage vs. Total Gate Charge POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG 6 of 8 July 2014 Document number: DS35441 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

DMS3012SFG Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. POWERDI3333-8 A Dim Min Max Typ A3 D 3.25 3.35 3.30 A1 E 3.25 3.35 3.30 D D2 2.22 2.32 2.27 D2 E2 1.56 1.66 1.61 L A 0.75 0.85 0.80 1 4 (4x) A1 0 0.05 0.02 Pin 1 ID A3 − − 0.203 b 0.27 0.37 0.32 b2 E (4x) b2 − − 0.20 E2 L 0.35 0.45 0.40 L1 − − 0.39 8 5 L1 e − − 0.65 (3x) Z − − 0.515 All Dimensions in mm Z (4x) e b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G Dimensions Value (in mm) C 0.650 G 0.230 8 5 G1 0.420 Y2 G1 Y1 Y 3.700 Y1 2.250 Y Y2 1.850 Y3 0.700 1 4 X 2.370 X2 0.420 Y3 X2 C POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG 7 of 8 July 2014 Document number: DS35441 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

DMS3012SFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMS3012SFG 8 of 8 July 2014 Document number: DS35441 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

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