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  • 型号: DG308BDY-T1-E3
  • 制造商: Vishay
  • 库位|库存: xxxx|xxxx
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DG308BDY-T1-E3产品简介:

ICGOO电子元器件商城为您提供DG308BDY-T1-E3由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 DG308BDY-T1-E3价格参考。VishayDG308BDY-T1-E3封装/规格:接口 - 模拟开关,多路复用器,多路分解器, 4 Circuit IC Switch 1:1 85 Ohm 16-SOIC。您可以下载DG308BDY-T1-E3参考资料、Datasheet数据手册功能说明书,资料中有DG308BDY-T1-E3 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)

描述

IC SWITCH QUAD CMOS 16SOIC

产品分类

接口 - 模拟开关,多路复用器,多路分解器

品牌

Vishay Siliconix

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

DG308BDY-T1-E3

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

供应商器件封装

16-SOIC N

其它名称

DG308BDY-T1-E3DKR

功能

开关

包装

Digi-Reel®

安装类型

表面贴装

导通电阻

160 欧姆

封装/外壳

16-SOIC(0.154",3.90mm 宽)

工作温度

-40°C ~ 85°C

标准包装

1

电压-电源,单/双 (±)

12V, ±15V

电压源

单/双电源

电流-电源

1µA

电路

4 x SPST - NC

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PDF Datasheet 数据手册内容提取

CG2 / DG2 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizon- tal deflection systems and damper applications (cid:127) High temperature metallurgically bonded con- struction (cid:127) Cavity-free glass passivated junction (cid:127) 2.0 ampere operation at T = 50°C with no ther- amb mal runaway (cid:127) Hermetically sealed package 17031 Mechanical Data Polarity: Color band denotes cathode end Case: DO-204AP Sintered glass case Mounting Position: Any Terminals: Solder plated axial leads, solderable per Weight: approx. 560 mg MILSTD- 750, Method 2026 Parts Table Part Type differentiation Package CG2 V = 1400 V DO-204AP(G-1) RRM DG2 V = 1500 V DO-204AP(G-1) RRM Absolute Maximum Ratings T = 25°C, unless otherwise specified amb Parameter Test condition Part Symbol Value Unit Reverse voltage = Repetitive see electrical characteristics CG2 V = V 1400 V R RRM peak reverse voltage DG2 V = V 1500 V R RRM Maximum average forward 0.375 " (9.5 mm) lead length at I 2.0 A F(AV) rectified current T = 50°C amb Peak forward surge current 8.3 ms single half sine wave I 40 A FSM superimposed on rated load (JEDEC Method) Maximum full load reverse 0.375 " (9.5 mm) lead length at I 200 µA R(AV) current full cycle average T =100°C amb Operating junction and storage T, T - 55 to + 175 °C J STG temperature range Maximum Thermal Resistance T = 25°C, unless otherwise specified amb Parameter Test condition Symbol Value Unit Typical thermal resistance 1) RθJA 55 K/W 1) Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted Document Number 86082 www.vishay.com Rev. 1.3, 11-Aug-04 1

CG2 / DG2 VISHAY Vishay Semiconductors Electrical Characteristics T = 25°C, unless otherwise specified amb Parameter Test condition Part Symbol Min Typ. Max Unit Maximum instantaneous I = 2.0 A V 1.1 V F F forward voltage Maximum reverse current V = V , T = 25°C I 5.0 µA R RRM amb R V = V , T = 100°C I 100 µA R RRM amb R Maximum reverse recovery time I = 0.5 A, I = 50 mA CG2 t 15 µs F R rr DG2 t 20 µs rr I = 0.5 A, I = 1.0 A, I = 0.25 A CG2 t 1.0 1.5 µs F R r rr DG2 t 1.0 1.5 µs rr Typical junction capacitance V = 4.0 V, f = 1 MHz C 15 pF R j Typical Characteristics (T = 25 °C unless otherwise specified) amb A) 2.0 A) 10 ( Resistiveor ( Current 1.5 InductiveL0o.a3d75"(9.5mm) Current TJ=150°C Rectified 1.0 LeadILpekn/IgAtVh=π Forward 1 orward 0.5 CapacitanceLoad neous 0.1 TJ=25°C eF Ipk/IAV=51.00 nta PulseWidth=300µs ag 20 sta 1%DutyCycle ver 0 In0.01 A 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 gcg2_01 AmbientTemperature(°C) gcg2_03 InstantaneousForwardVoltage(V) Figure1. Forward Current Derating Curve Figure3. Typical Instantaneous Forward Characteristics 50 A) 10 A) 8.3msSingleHalfSine-Wave µ( nt( 40 (JEDECMethod) ent Curre TNJo=Lo2a5d°CCondition Curr 1 TJ=125°C e e 30 s urg ver S e R ward 20 TJ=TJmax. ous 0.1 or ne kF 10 nta a a Pe nst 0.01 TJ=25°C 0 I 1 10 100 0 20 40 60 80 100 gcg2_02 NumberofCyclesat60Hz gcg2_04 PercentofRatedPeakReverseVoltage(%) Figure2. Maximum Non-Repetitive Peak Forward Surge Current Figure4. Typical Reverse Characteristics www.vishay.com Document Number 86082 2 Rev. 1.3, 11-Aug-04

CG2 / DG2 VISHAY Vishay Semiconductors 30 TJ=25°C F) f=1.0MHz p Vsig=50mVp-p ( e nc 10 a cit a p a C n o cti n u J 1 1 10 100 gcg2_05 ReverseVoltage(V) Figure5. Typical Junction Capacitance Package Dimensions in mm (Inches) 0.86(0.034) 0.71(0.028) 25.4(1.0) DIA. MIN. 6.1(0.240) MAX. 3.8(0.150) 2.5(0.100) DIA. 25.4(1.0) MIN. 17030 Document Number 86082 www.vishay.com Rev. 1.3, 11-Aug-04 3

CG2 / DG2 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com Document Number 86082 4 Rev. 1.3, 11-Aug-04

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1

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