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  • 型号: CD74HCT541M
  • 制造商: Texas Instruments
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CD74HCT541M产品简介:

ICGOO电子元器件商城为您提供CD74HCT541M由Texas Instruments设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 CD74HCT541M价格参考¥3.30-¥8.14。Texas InstrumentsCD74HCT541M封装/规格:逻辑 - 缓冲器,驱动器,接收器,收发器, Buffer, Non-Inverting 1 Element 8 Bit per Element 3-State Output 20-SOIC。您可以下载CD74HCT541M参考资料、Datasheet数据手册功能说明书,资料中有CD74HCT541M 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC BUFF/DVR TRI-ST 8BIT 20SOIC缓冲器和线路驱动器 Tri-St N-Invrt Octal

产品分类

逻辑 - 缓冲器,驱动器,接收器,收发器

品牌

Texas Instruments

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

逻辑集成电路,缓冲器和线路驱动器,Texas Instruments CD74HCT541M74HCT

数据手册

点击此处下载产品Datasheet

产品型号

CD74HCT541M

产品目录页面

点击此处下载产品Datasheet

产品种类

缓冲器和线路驱动器

传播延迟时间

28 ns at 4.5 V

低电平输出电流

6 mA

供应商器件封装

20-SOIC

元件数

1

其它名称

296-9287-5
296-9287-5-ND
296-9288-5
CD74HCT541ME4
CD74HCT541ME4-ND
CD74HCT541MG4
CD74HCT541MG4-ND

包装

管件

单位重量

500.700 mg

商标

Texas Instruments

安装类型

表面贴装

安装风格

SMD/SMT

封装

Tube

封装/外壳

20-SOIC(0.295",7.50mm 宽)

封装/箱体

SOIC-20

工作温度

-55°C ~ 125°C

工厂包装数量

25

最大工作温度

+ 125 C

最小工作温度

- 55 C

极性

Non-Inverting

标准包装

25

每元件位数

8

每芯片的通道数量

8

电压-电源

4.5 V ~ 5.5 V

电流-输出高,低

6mA,6mA

电源电压-最大

5.5 V

电源电压-最小

4.5 V

电源电流

0.08 mA

系列

CD74HCT541

输入线路数量

8

输出类型

3-State

输出线路数量

8

逻辑类型

缓冲器/线路驱动器,非反相

逻辑系列

HCT

高电平输出电流

- 6 mA

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PDF Datasheet 数据手册内容提取

CD54/74HC540, CD74HCT540, CD54/74HC541, CD54/74HCT541 Data sheet acquired from Harris Semiconductor SCHS189C High-Speed CMOS Logic January 1998 - Revised July 2004 Octal Buffer and Line Drivers, Three-State Features Description • ’HC540, CD74HCT540 . . . . . . . . . . . . . . . . . . . Inverting The ’HC540 and CD74HCT540 are Inverting Octal Buffers andLineDriverswithThree-StateOutputsandthecapability [ /Title • ’HC541, ’HCT541. . . . . . . . . . . . . . . . . . . . . . Non-Inverting todrive15LSTTLloads.The’HC541and’HCT541areNon- (CD74 • Buffered Inputs InvertingOctalBuffersandLineDriverswithThree-StateOut- HC540 puts that can drive 15 LSTTL loads. The Output Enables • Three-State Outputs (OE1) and (OE2) control the Three-State Outputs. If either , • Bus Line Driving Capability OE1 or OE2 is HIGH the outputs will be in the high imped- CD74 ancestate.FordataoutputOE1andOE2bothmustbeLOW. HCT54 • Typical Propagation Delay = 9ns at VCC = 5V, 0, CL = 15pF, TA = 25oC Ordering Information CD74 • Fanout (Over Temperature Range) TEMP. RANGE PART NUMBER (oC) PACKAGE HC541 - Standard Outputs. . . . . . . . . . . . . . .10 LSTTL Loads CD54HC540F3A -55 to 125 20 Ld CERDIP - Bus Driver Outputs . . . . . . . . . . . . .15 LSTTL Loads , CD54HC541F3A -55 to 125 20 Ld CERDIP CD74 • Wide Operating Temperature Range . . .-55oC to 125oC CD54HCT541F3A -55 to 125 20 Ld CERDIP HCT54 • Balanced Propagation Delay and Transition Times CD74HC540E -55 to 125 20 Ld PDIP • Significant Power Reduction Compared to LSTTL CD74HC540M -55 to 125 20 Ld SOIC Logic ICs CD74HC540M96 -55 to 125 20 Ld SOIC • HC Types CD74HC541E -55 to 125 20 Ld PDIP - 2V to 6V Operation CD74HC541M -55 to 125 20 Ld SOIC - High Noise Immunity: NIL = 30%, NIH = 30% of VCC CD74HC541M96 -55 to 125 20 Ld SOIC at VCC = 5V CD74HC541PW -55 to 125 20 Ld TSSOP • HCT Types CD74HC541PWR -55 to 125 20 Ld TSSOP - 4.5V to 5.5V Operation CD74HCT540E -55 to 125 20 Ld PDIP - Direct LSTTL Input Logic Compatibility, CD74HCT540M -55 to 125 20 Ld SOIC VIL= 0.8V (Max), VIH = 2V (Min) - CMOS Input Compatibility, Il≤1µA at VOL, VOH CD74HCT540M96 -55 to 125 20 Ld SOIC CD74HCT541E -55 to 125 20 Ld PDIP CD74HCT541M -55 to 125 20 Ld SOIC CD74HCT541M96 -55 to 125 20 Ld SOIC NOTE: Whenordering,usetheentirepartnumber.Thesuffix96 denotes tape and reel. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © 2004, Texas Instruments Incorporated 1

CCDD5544//7744HHCC554400,, CCDD7744HHCCTT554400,, CCDD5544//7744HHCC554411,, CCDD5544//7744HHCCTT554411 Pinouts CD54HC540 CD54HC541, CD54HCT541 (CERDIP) (CERDIP) CD74HC540, CD74HCT540 CD74HC541 (PDIP, SOIC) (PDIP, SOIC, TSSOP) TOP VIEW CD74HCT541 (PDIP, SOIC) OE 1 20 VCC TOP VIEW A0 2 19 OE2 OE1 1 20 VCC A1 3 18 Y0 A0 2 19 OE2 A2 4 17 Y1 A1 3 18 Y0 A3 5 16 Y2 A2 4 17 Y1 A4 6 15 Y3 A3 5 16 Y2 A5 7 14 Y4 A4 6 15 Y3 A6 8 13 Y5 A5 7 14 Y4 A7 9 12 Y6 A6 8 13 Y5 GND 10 11 Y7 A7 9 12 Y6 GND 10 11 Y7 Functional Diagram OEA OEB 540 541 D0 Y0 Y0 D1 Y1 Y1 D2 Y2 Y2 D3 Y3 Y3 D4 Y4 Y4 D5 Y5 Y5 D6 Y6 Y6 D7 Y7 Y7 2

CCDD5544//7744HHCC554400,, CCDD7744HHCCTT554400,, CCDD5544//7744HHCC554411,, CCDD5544//7744HHCCTT554411 TRUTH TABLE INPUTS OUTPUTS OE1 OE2 An 540 541 L L H L H H X X Z Z X H X Z Z L L L H L H = HIGH Voltage Level L = LOW Voltage Level X= Don’t Care Z = High Impedance 3

CCDD5544//7744HHCC554400,, CCDD7744HHCCTT554400,, CCDD5544//7744HHCC554411,, CCDD5544//7744HHCCTT554411 Absolute Maximum Ratings Thermal Information DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V Thermal Resistance (Typical, Note 1) θJA (oC/W) DC Input Diode Current, IIK E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 For VI < -0.5V or VI > VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 DC Output Diode Current, IOK PW (TSSOP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . 83 For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . .150oC DC Drain Current, per Output, IO Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300oC DC Output Source or Sink Current per Output Pin, IO (SOIC - Lead Tips Only) For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA Operating Conditions Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . .-55oC to 125oC Supply Voltage Range, VCC HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC Input Rise and Fall Time 2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max) 4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max) 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max) CAUTION:Stressesabovethoselistedin“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thisisastressonlyratingandoperation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. The package thermal impedance is calculated in accordance with JESD 51-7. DC Electrical Specifications TEST CONDITIONS 25oC -40oC TO 85oC -55oCTO125oC VCC PARAMETER SYMBOL VI(V) IO(mA) (V) MIN TYP MAX MIN MAX MIN MAX UNITS HC TYPES High Level Input VIH - - 2 1.5 - - 1.5 - 1.5 - V Voltage 4.5 3.15 - - 3.15 - 3.15 - V 6 4.2 - - 4.2 - 4.2 - V Low Level Input VIL - - 2 - - 0.5 - 0.5 - 0.5 V Voltage 4.5 - - 1.35 - 1.35 - 1.35 V 6 - - 1.8 - 1.8 - 1.8 V High Level Output VOH VIHorVIL -0.02 2 1.9 - - 1.9 - 1.9 - V Voltage -0.02 4.5 4.4 - - 4.4 - 4.4 - V CMOS Loads -0.02 6 5.9 - - 5.9 - 5.9 - V High Level Output - - - - - - - - - V Voltage -6 4.5 3.98 - - 3.84 - 3.7 - V TTL Loads -7.8 6 5.48 - - 5.34 - 5.2 - V Low Level Output VOL VIHorVIL 0.02 2 - - 0.1 - 0.1 - 0.1 V Voltage 0.02 4.5 - - 0.1 - 0.1 - 0.1 V CMOS Loads 0.02 6 - - 0.1 - 0.1 - 0.1 V Low Level Output - - - - - - - - - V Voltage 6 4.5 - - 0.26 - 0.33 - 0.4 V TTL Loads 7.8 6 - - 0.26 - 0.33 - 0.4 V Input Leakage II VCC or - 6 - - ±0.1 - ±1 - ±1 µA Current GND 4

CCDD5544//7744HHCC554400,, CCDD7744HHCCTT554400,, CCDD5544//7744HHCC554411,, CCDD5544//7744HHCCTT554411 DC Electrical Specifications (Continued) TEST CONDITIONS 25oC -40oC TO 85oC -55oCTO125oC VCC PARAMETER SYMBOL VI(V) IO(mA) (V) MIN TYP MAX MIN MAX MIN MAX UNITS Quiescent Device ICC VCC or 0 6 - - 8 - 80 - 160 µA Current GND Three-StateLeakage IOZ VILorVIH VO = 6 - - ±0.5 - ±5.0 - ±10 µA Current VCC or GND HCT TYPES High Level Input VIH - - 4.5 to 2 - - 2 - 2 - V Voltage 5.5 Low Level Input VIL - - 4.5 to - - 0.8 - 0.8 - 0.8 V Voltage 5.5 High Level Output VOH VIHorVIL -0.02 4.5 4.4 - - 4.4 - 4.4 - V Voltage CMOS Loads High Level Output -6 4.5 3.98 - - 3.84 - 3.7 - V Voltage TTL Loads Low Level Output VOL VIHorVIL 0.02 4.5 - - 0.1 - 0.1 - 0.1 V Voltage CMOS Loads Low Level Output 6 4.5 - - 0.26 - 0.33 - 0.4 V Voltage TTL Loads Input Leakage II VCCand 0 5.5 - ±0.1 - ±1 - ±1 µA Current GND Quiescent Device ICC VCC or 0 5.5 - - 8 - 80 - 160 µA Current GND Three-StateLeakage IOZ VILorVIH VO = 5.5 - - ±0.5 - ±5.0 - ±10 µA Current VCC or GND Additional Quiescent ∆ICC VCC - 4.5 to - 100 360 - 450 - 490 µA Device Current Per (Note 2) -2.1 5.5 Input Pin: 1 Unit Load NOTE: 2. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA. HCT Input Loading Table UNIT LOADS INPUT HCT540 HCT541 A0 - A7 1 0.4 OE2 0.75 0.75 OE1 1.15 1.15 NOTE: UnitLoadis∆ICClimitspecificinDCElectricalSpecifications Table, e.g., 360µA max. at 25oC. 5

CD54/74HC540, CD74HCT540, CD54/74HC541, CD54/74HCT541 Switching Specifications CL = 50pF, Input tr, tf= 6ns -40oC TO -55oC TO 25oC 85oC 125oC TEST PARAMETER SYMBOL CONDITIONS VCC(V) MIN TYP MAX MIN MAX MIN MAX UNITS HC TYPES Propagation Delay tPLH, tPHL CL = 50pF Data to Outputs (540) 2 - - 110 - 140 - 165 ns 4.5 - - 22 - 28 - 33 ns CL = 15pF 5 - 9 - - - - - ns CL = 50pF 6 - - 19 - 24 - 28 ns Data to Outputs (541) tPLZ,tPHZ CL = 50pF 2 - - 115 - 145 - 175 ns 4.5 - - 23 - 29 - 35 ns CL = 15pF 5 - 9 - - - - - ns CL = 50pF 6 - - 20 - 25 - 30 ns Output Enable and Disable tPLZ,tPHZ CL = 50pF 2 - - 160 - 200 - 240 ns to Outputs (540) 4.5 - - 32 - 40 - 48 ns CL = 15pF 5 - 13 - - - - - ns CL = 50pF 6 - - 27 - 34 - 41 ns Output Enable and Disable tPLZ,tPHZ CL = 50pF 2 - - 160 - 200 - 240 ns to Outputs (541) 4.5 - - 32 - 40 - 48 ns CL = 15pF 5 - 14 - - - - - ns CL = 50pF 6 - - 23 - 29 - 35 ns Output Transition Time tTHL, tTLH CL = 50pF 2 - - 60 - 75 - 90 ns 4.5 - - 12 - 15 - 18 ns 6 - - 10 - 13 - 15 ns Input Capacitance CI CL = 50pF - 10 - 10 - 10 - 10 pF Three-State Output CO - - 20 - 20 - 20 - 20 pF Capacitance Power Dissipation Capacitance CPD CL = 15pF 5 - 50 - - - - - pF (Notes 3, 4) (540) Power Dissipation Capacitance CPD CL = 15pF 5 - 48 - - - - - pF (Notes 3, 4) (541) HCT TYPES Propagation Delay tPHL,tPLH Data to Outputs (540) CL = 50pF 4.5 - - 24 - 30 - 36 ns CL = 15pF 5 - 9 - - - - - ns Data to Outputs (541) tPHL,tPLH CL = 50pF 4.5 - - 28 - 35 - 42 ns CL = 15pF 5 - 11 - - - - - ns Output Enable and Disable tPLZ,tPHZ CL = 50pF 4.5 - - 35 - 44 - 53 ns to Outputs (540, 541) CL = 15pF 5 - 14 - - - - - ns Output Transition Time tTLH, tTHL CL = 50pF 4.5 - - 12 - 15 - 18 ns Input Capacitance CI CL = 50pF - 10 - 10 - 10 - 10 pF 6

CD54/74HC540, CD74HCT540, CD54/74HC541, CD54/74HCT541 Switching Specifications CL = 50pF, Input tr, tf= 6ns (Continued) -40oC TO -55oC TO 25oC 85oC 125oC TEST PARAMETER SYMBOL CONDITIONS VCC(V) MIN TYP MAX MIN MAX MIN MAX UNITS Three-State Output CO - - 20 - 20 - 20 - 20 pF Capacitance Power Dissipation Capacitance CPD CL = 15pF 5 - 55 - - - - - pF (Notes 3, 4) (540, 541) NOTES: 3. CPD is used to determine the dynamic power consumption, per channel. 4. PD = VCC2 fi (CPD + CL) where fi =Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage. Test Circuits and Waveforms tr = 6ns tf = 6ns tr = 6ns tf = 6ns 90% VCC 2.7V 3V INPUT 50% INPUT 1.3V 10% GND 0.3V GND tTHL tTLH tTHL tTLH 90% 90% 50% 1.3V INVERTING INVERTING 10% 10% OUTPUT OUTPUT tPHL tPLH tPHL tPLH FIGURE1. HCTRANSITIONTIMESANDPROPAGATION FIGURE2. HCTTRANSITIONTIMESANDPROPAGATION DELAY TIMES, COMBINATION LOGIC DELAY TIMES, COMBINATION LOGIC 6ns 6ns tr 6ns tf 6ns OUTPUT 90% VCC OUTPUT 2.7 3V DISABLE 50% DISABLE 1.3 10% 0.3 GND GND tPLZ tPZL tPLZ tPZL OUTPUT LOW OUTPUT LOW TO OFF 50% TO OFF 1.3V 10% 10% tPHZ 90% tPZH tPHZ 90% tPZH OUTPUT HIGH OUTPUT HIGH 50% TO OFF TO OFF 1.3V OUTPUTS OUTPUTS OUTPUTS OUTPUTS OUTPUTS OUTPUTS ENABLED DISABLED ENABLED ENABLED DISABLED ENABLED FIGURE3. HCTHREE-STATEPROPAGATIONDELAY FIGURE4. HCTTHREE-STATEPROPAGATIONDELAY WAVEFORM WAVEFORM 7

Test Circuits and Waveforms (Continued) OTHER OUTPUT INPUTS IC WITH RL = 1kΩ TIED HIGH THREE- VCC FOR tPLZ AND tPZL OR LOW STATE CL GND FOR tPHZ AND tPZH OUTPUT 50pF OUTPUT DISABLE NOTE: OpendrainwaveformstPLZandtPZLarethesameasthoseforthree-stateshownontheleft.ThetestcircuitisOutputRL=1kΩto VCC, CL = 50pF. FIGURE 5. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT 8

PACKAGE OPTION ADDENDUM www.ti.com 22-Jul-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) Ball material (3) (4/5) (6) CD54HC540F3A ACTIVE CDIP J 20 1 TBD SNPB N / A for Pkg Type -55 to 125 CD54HC540F3A CD54HC541F ACTIVE CDIP J 20 1 TBD SNPB N / A for Pkg Type -55 to 125 CD54HC541F CD54HC541F3A ACTIVE CDIP J 20 1 TBD SNPB N / A for Pkg Type -55 to 125 CD54HC541F3A CD54HCT541F ACTIVE CDIP J 20 1 TBD SNPB N / A for Pkg Type -55 to 125 CD54HCT541F CD54HCT541F3A ACTIVE CDIP J 20 1 TBD SNPB N / A for Pkg Type -55 to 125 CD54HCT541F3A CD74HC540E ACTIVE PDIP N 20 20 Pb-Free NIPDAU N / A for Pkg Type -55 to 125 CD74HC540E (RoHS) CD74HC540M ACTIVE SOIC DW 20 25 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HC540M & no Sb/Br) CD74HC540M96 ACTIVE SOIC DW 20 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HC540M & no Sb/Br) CD74HC541E ACTIVE PDIP N 20 20 Pb-Free NIPDAU N / A for Pkg Type -55 to 125 CD74HC541E (RoHS) CD74HC541EE4 ACTIVE PDIP N 20 20 Pb-Free NIPDAU N / A for Pkg Type -55 to 125 CD74HC541E (RoHS) CD74HC541M ACTIVE SOIC DW 20 25 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HC541M & no Sb/Br) CD74HC541M96 ACTIVE SOIC DW 20 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HC541M & no Sb/Br) CD74HC541M96G4 ACTIVE SOIC DW 20 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HC541M & no Sb/Br) CD74HC541PW ACTIVE TSSOP PW 20 70 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HJ541 & no Sb/Br) CD74HC541PWR ACTIVE TSSOP PW 20 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HJ541 & no Sb/Br) CD74HCT540E ACTIVE PDIP N 20 20 Pb-Free NIPDAU N / A for Pkg Type -55 to 125 CD74HCT540E (RoHS) CD74HCT540M ACTIVE SOIC DW 20 25 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT540M & no Sb/Br) Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 22-Jul-2020 Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) Ball material (3) (4/5) (6) CD74HCT540M96 ACTIVE SOIC DW 20 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT540M & no Sb/Br) CD74HCT541E ACTIVE PDIP N 20 20 Pb-Free NIPDAU N / A for Pkg Type -55 to 125 CD74HCT541E (RoHS) CD74HCT541M ACTIVE SOIC DW 20 25 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT541M & no Sb/Br) CD74HCT541M96 ACTIVE SOIC DW 20 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT541M & no Sb/Br) CD74HCT541M96E4 ACTIVE SOIC DW 20 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT541M & no Sb/Br) CD74HCT541M96G4 ACTIVE SOIC DW 20 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT541M & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. Addendum-Page 2

PACKAGE OPTION ADDENDUM www.ti.com 22-Jul-2020 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF CD54HC540, CD54HC541, CD54HCT541, CD74HC540, CD74HC541, CD74HCT541 : •Catalog: CD74HC540, CD74HC541, CD74HCT541 •Military: CD54HC540, CD54HC541, CD54HCT541 NOTE: Qualified Version Definitions: •Catalog - TI's standard catalog product •Military - QML certified for Military and Defense Applications Addendum-Page 3

PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) CD74HC540M96 SOIC DW 20 2000 330.0 24.4 10.8 13.0 2.7 12.0 24.0 Q1 CD74HC541M96 SOIC DW 20 2000 330.0 24.4 10.8 13.0 2.7 12.0 24.0 Q1 CD74HC541PWR TSSOP PW 20 2000 330.0 16.4 6.95 7.1 1.6 8.0 16.0 Q1 CD74HCT540M96 SOIC DW 20 2000 330.0 24.4 10.8 13.0 2.7 12.0 24.0 Q1 CD74HCT541M96 SOIC DW 20 2000 330.0 24.4 10.8 13.0 2.7 12.0 24.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) CD74HC540M96 SOIC DW 20 2000 367.0 367.0 45.0 CD74HC541M96 SOIC DW 20 2000 367.0 367.0 45.0 CD74HC541PWR TSSOP PW 20 2000 367.0 367.0 38.0 CD74HCT540M96 SOIC DW 20 2000 367.0 367.0 45.0 CD74HCT541M96 SOIC DW 20 2000 367.0 367.0 45.0 PackMaterials-Page2

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PACKAGE OUTLINE DW0020A SOIC - 2.65 mm max height SCALE 1.200 SOIC C 10.63 SEATING PLANE TYP 9.97 A PIN 1 ID 0.1 C AREA 18X 1.27 20 1 13.0 2X 12.6 11.43 NOTE 3 10 11 0.51 20X 7.6 0.31 2.65 MAX B 7.4 0.25 C A B NOTE 4 0.33 TYP 0.10 0.25 SEE DETAIL A GAGE PLANE 0.3 1.27 0 - 8 0.1 0.40 DETAIL A TYPICAL 4220724/A 05/2016 NOTES: 1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per side. 4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.43 mm per side. 5. Reference JEDEC registration MS-013. www.ti.com

EXAMPLE BOARD LAYOUT DW0020A SOIC - 2.65 mm max height SOIC 20X (2) SYMM 1 20 20X (0.6) 18X (1.27) SYMM (R0.05) TYP 10 11 (9.3) LAND PATTERN EXAMPLE SCALE:6X SOOPLEDNEINRG MASK METAL MSOELTDAEL RU NMDAESRK SOOPLEDNEINRG MASK 0.07 MAX 0.07 MIN ALL AROUND ALL AROUND NON SOLDER MASK SOLDER MASK DEFINED DEFINED SOLDER MASK DETAILS 4220724/A 05/2016 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com

EXAMPLE STENCIL DESIGN DW0020A SOIC - 2.65 mm max height SOIC 20X (2) SYMM 1 20 20X (0.6) 18X (1.27) SYMM 10 11 (9.3) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:6X 4220724/A 05/2016 NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. www.ti.com

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