Product Sample & Technical Tools & Support & Folder Buy Documents Software Community CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 CC1120 High-Performance RF Transceiver for Narrowband Systems 1 Device Overview 1.1 Features 1 • High-Performance,Single-ChipTransceiver • AutomaticOutputPowerRamping – AdjacentChannelSelectivity: • ConfigurableDataRates:0to200kbps 64dBat12.5-kHzOffset • SupportedModulationFormats:2-FSK, – BlockingPerformance:91dBat10MHz 2-GFSK,4-FSK,4-GFSK,MSK,OOK – ExcellentReceiverSensitivity: • WaveMatch:AdvancedDigitalSignalProcessing • –123dBmat1.2kbps forImprovedSyncDetectPerformance • –110dBmat50kbps • RoHS-Compliant5-mm× 5-mmNo-LeadQFN 32-PinPackage(RHB) • –127dBmUsingBuilt-inCodingGain • Regulations –SuitableforSystemsTargeting – VeryLowPhaseNoise: ComplianceWith –111dBc/Hzat10-kHzOffset – Europe:ETSIEN300220,ETSIEN54-25 • SuitableforSystemsTargetingETSICategory1 Compliancein169-MHzand433-MHzBands – US:FCCCFR47Part15,FCCCFR47Part90, 24,and101 • HighSpectralEfficiency(9.6kbpsin12.5-kHz ChannelinComplianceWithFCCNarrowbanding – Japan:ARIBRCRSTD-T30,ARIBSTD-T67, Mandate) ARIBSTD-T108 • Separate128-ByteRXandTXFIFOs • PeripheralsandSupportFunctions • SupportforSeamlessIntegrationWiththeCC1190 – EnhancedWake-On-Radio(eWOR) DeviceforIncreasedRangeGivingupto3-dB FunctionalityforAutomaticLow-PowerReceive ImprovementinSensitivityandupto+27-dBm Polling OutputPower – IncludesFunctionsforAntennaDiversity • PowerSupply Support – WideSupplyVoltageRange(2.0Vto3.6V) – SupportforRetransmissions – LowCurrentConsumption: – SupportforAutomaticAcknowledgeofReceived Packets • RX:2mAinRXSniffMode – TCXOSupportandControl,AlsoinPower • RX:17mAPeakCurrentinLow-Power Modes Mode – AutomaticClearChannelAssessment(CCA)for • RX:22mAPeakCurrentin Listen-Before-Talk(LBT)Systems High-PerformanceMode – Built-inCodingGainSupportforIncreased • TX:45mAat+14dBm RangeandRobustness – PowerDown:0.12 μA – DigitalRSSIMeasurement (0.5μAWitheWORTimerRunning) – TemperatureSensor • ProgrammableOutputPowerupto+16dBmWith 0.4-dBStepSize 1.2 Applications • NarrowbandUltra-Low-PowerWirelessSystems • IEEE802.15.4gSystems WithChannelSpacingDownto • HomeandBuildingAutomation 12.5kHz • WirelessAlarmandSecuritySystems • 169-,315-,433-,868-,915-,920-,950-MHz • IndustrialMonitoringandControl ISM/SRDBand • WirelessHealthcareApplications • WirelessMeteringandWirelessSmartGrid • WirelessSensorNetworksandActiveRFID (AMRandAMI) • PrivateMobileRadios 1 AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 1.3 Description The CC1120 device is a fully integrated single-chip radio transceiver designed for high performance at very low-power and low-voltage operation in cost-effective wireless systems. All filters are integrated, thus removing the need for costly external SAW and IF filters. The device is mainly intended for Industrial, Scientific, and Medical (ISM) applications and Short Range Device (SRD) frequency bands at 164to192MHz,274to320MHz,410to480MHz,and820to960MHz. The CC1120 device provides extensive hardware support for packet handling, data buffering, burst transmissions, clear channel assessment, link quality indication, and wake-on-radio. The main operating parameters of the CC1120 device can be controlled through an SPI interface. In a typical system, the CC1120deviceisusedwithamicrocontrollerandonlyafewexternalpassivecomponents. DeviceInformation(1) PARTNUMBER PACKAGE BODYSIZE(NOM) CC1120 VQFN(32) 5.00mm×5.00mm (1) Formoreinformation,seeSection8,MechanicalPackagingandOrderableInformation 1.4 Functional Block Diagram Figure1-1showsthesystemblockdiagramoftheCC1120device. CC112X (optcioloncakl 3in2tpkHutz) autUo-ltcraal ilborwa tpeodw ReCr 3o2skcHillza tor Power on reset 4Rk ObyMte MUalitnra R loawdMMi opAC oRCUwCoenrt r1o6l Ubnit it Saenrdia dl acotSanP finiIg tuerrafaticoen CSn (chip select) SI (serial input) System bus Interrupt and SO (serial output) IO handler SCLK (serial clock) EnWhaankcee Ode nuW lRtOraaRd loiow t ipmoewrer Batettmerpy sseennssoorr / Csotnaftiugsu rraetgioisnte arnsd F2IF5bO6u f bfReyArteM aPnadc FkIeFtO h acnodnlterorl (optional GPIO0-3) RF and DSP frontend Output power ramping and OOK / ASK modulation (optional autodetected external XOSC / TCXO) PA e1f4ficdiBemnc yh iPghA QI FuFllyre inqtueegnracyte Sdy Fnrtahcetsioiznearl-N Modulator sDigantaa li ncthearifna caec cweitshs XOSC XXOOSSCC__QQ12 90dB dynamic LNA_P ifamp range ADC (optional bit clock) HighL lNinAearity Channel filter Cordic Highly dfleemxiboldeu FlaStoKr / OOK (optional low jitter serial LNA_N ifamp 90radnBg dey AnDamCic dparotato ocoultsp)ut for legacy AGC (optional GPIO for Automatic Gain Control, 60dB VGA range antenna diversity) RSSI measurements and carrier sense detection Figure1-1.FunctionalBlockDiagram 2 DeviceOverview Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 Table of Contents 1 DeviceOverview......................................... 1 4.14 ThermalResistanceCharacteristicsforRHB ............................................. .............................................. Package 15 1.1 Features 1 ............................... ........................................... 4.15 TimingRequirements 16 1.2 Applications 1 ............................... ............................................ 4.16 RegulatoryStandards 16 1.3 Description 2 .............................. ............................ 4.17 Typical Characteristics 17 1.4 FunctionalBlockDiagram 2 2 Revision History......................................... 4 5 DetailedDescription................................... 20 ....................................... 3 TerminalConfigurationandFunctions.............. 5 5.1 BlockDiagram 20 .............................. .......................................... 5.2 FrequencySynthesizer 20 3.1 PinDiagram 5 ............................................. ..................................... 5.3 Receiver 21 3.2 PinConfiguration 6 .......................................... 4 Specifications ............................................ 7 5.4 Transmitter 21 ................... ................................. 5.5 RadioControlandUserInterface 21 AbsoluteMaximumRatings 7 ................ .......................................... 5.6 EnhancedWake-On-Radio(eWOR) 21 4.1 ESDRatings 7 ........................................... 4.2 RecommendedOperatingConditions(General 5.7 SniffMode 22 ....................................... ................................... Characteristics) 7 5.8 AntennaDiversity 22 .................................... .......................................... 4.3 RF Characteristics 7 5.9 WaveMatch 23 4.4 PowerConsumptionSummary....................... 8 6 Application,Implementation,andLayout......... 24 .................................. .............................. 4.5 Receive Parameters 9 6.1 ApplicationInformation 24 4.6 Transmit Parameters................................ 12 7 DeviceandDocumentationSupport............... 26 ..................................... ...................................... 4.7 PLLParameters 13 7.1 DeviceSupport 26 ....................... ............................. 4.8 32-MHzClockInput(TCXO) 14 7.2 DocumentationSupport 27 ........................... .......................................... 4.9 32-MHzCrystalOscillator 14 7.3 Trademarks 27 .................................. ..................... 4.10 32-kHzClockInput 14 7.4 ElectrostaticDischargeCaution 27 ............................... ............................................. 4.11 32-kHzRCOscillator 15 7.5 Glossary 27 4.12 I/OandReset....................................... 15 8 MechanicalPackagingandOrderable ................................ Information.............................................. 28 4.13 Temperature Sensor 15 Copyright©2011–2015,TexasInstrumentsIncorporated TableofContents 3 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 2 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionG(September2014)toRevisionH Page • MovedstoragetemperaturerangebacktoAbsoluteMaximumRatingstable............................................... 7 • UpdatedtheformattingoftheSpecificationssection ........................................................................... 7 • ChangedclockfrequencyminimumvalueFROM:32MHzTO:31.25MHzin32-MHzClockInput(TCXO) .......... 14 • Addedclockfrequencytypicalvalueof32MHzto32-MHzClockInput(TCXO) .......................................... 14 • ChangedcrystalfrequencyminimumvalueFROM:32MHzTO:31.25MHzinthe32-MHzCrystalOscillatortable. 14 • Addedcrystalfrequencytypicalvalueof32MHzinthe32-MHzCrystalOscillatortable................................. 14 • ChangedtabletitleFROM:WakeupandTimingTO:TimingRequirements ............................................... 16 ChangesfromRevisionF(July2014)toRevisionG Page • Added"Ambient"tothetemperaturerangeconditionandremovedTjfromTemperaturerange ......................... 7 • AddeddatatoTCXOtable......................................................................................................... 14 4 RevisionHistory Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 3 Terminal Configuration and Functions 3.1 Pin Diagram Figure3-1showspinnamesandlocationsfortheCC1120device. P P 2 H H C SC SC NTH D_C D_C OS Q2 Q1 XO XO SY PF PF _X C_ C_ L_ D_ D_ L_ D_ T S S P D D P D X O O C V V C V E X X D A A D A 2 1 0 9 8 7 6 5 3 3 3 2 2 2 2 2 VDD_GUARD 1 24 LPF1 RESET_N 2 23 LPF0 GPIO3 3 22 AVDD_SYNTH1 GPIO2 4 21 DCPL_VCO CC1120 DVDD 5 20 LNA_N DCPL 6 19 LNA_P SI 7 GND 18 TRX_SW SCLK 8 GROUND PAD 17 PA 9 10 11 12 13 14 15 16 S G C D A R A N O (GP PIO0 Sn VDD VDD_ BIAS VDD_ .C. IO IF RF 1 ) Figure3-1.Package5-mm ×5-mmQFN Copyright©2011–2015,TexasInstrumentsIncorporated TerminalConfigurationandFunctions 5 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 3.2 Pin Configuration ThefollowingtableliststhepinoutconfigurationfortheCC1120device. PIN TYPE DESCRIPTION NO. NAME 1 VDD_GUARD Power 2.0–3.6VVDD 2 RESET_N Digitalinput Asynchronous,active-lowdigitalreset 3 GPIO3 DigitalI/O General-purposeI/O 4 GPIO2 DigitalI/O General-purposeI/O 5 DVDD Power 2.0–3.6VDDtointernaldigitalregulator 6 DCPL Power Digitalregulatoroutputtoexternaldecouplingcapacitor 7 SI Digitalinput Serialdatain 8 SCLK Digitalinput Serialdataclock 9 SO(GPIO1) DigitalI/O Serialdataout(general-purposeI/O) 10 GPIO0 DigitalI/O General-purposeI/O 11 CSn Digitalinput Active-lowchipselect 12 DVDD Power 2.0–3.6VVDD 13 AVDD_IF Power 2.0–3.6VVDD 14 RBIAS Analog Externalhigh-precisionresistor 15 AVDD_RF Power 2.0–3.6VVDD 16 N.C. — Notconnected 17 PA Analog Single-endedTXoutput(requiresDCpathtoVDD) TXandRXswitch.ConnectedinternallytoGNDinTXandfloating 18 TRX_SW Analog (high-impedance)inRX. 19 LNA_P Analog DifferentialRXinput(requiresDCpathtoground) 20 LNA_N Analog DifferentialRXinput(requiresDCpathtoground) 21 DCPL_VCO Power PinforexternaldecouplingofVCOsupplyregulator 22 AVDD_SYNTH1 Power 2.0–3.6VVDD 23 LPF0 Analog Externalloopfiltercomponents 24 LPF1 Analog Externalloopfiltercomponents 25 AVDD_PFD_CHP Power 2.0–3.6VVDD 26 DCPL_PFD_CHP Power PinforexternaldecouplingofPFDandCHPregulator 27 AVDD_SYNTH2 Power 2.0–3.6VVDD 28 AVDD_XOSC Power 2.0–3.6VVDD 29 DCPL_XOSC Power PinforexternaldecouplingofXOSCsupplyregulator Crystaloscillatorpin1(mustbegroundedifaTCXOorotherexternal 30 XOSC_Q1 Analog clockconnectedtoEXT_XOSCisused) Crystaloscillatorpin2(mustbeleftfloatingifaTCXOorother 31 XOSC_Q2 Analog externalclockconnectedtoEXT_XOSCisused) Pinforexternalclockinput(mustbegroundedifaregularcrystal 32 EXT_XOSC Digitalinput connectedtoXOSC_Q1andXOSC_Q2isused) — GND Groundpad Thegroundpadmustbeconnectedtoasolidgroundplane. 6 TerminalConfigurationandFunctions Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 4 Specifications All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470rev.1.0.1,orCC1120EM_169rev.1.2. Absolute Maximum Ratings overoperatingfree-airtemperaturerange(unlessotherwisenoted)(1)(2) MIN MAX UNIT Supplyvoltage(VDD,AVDD_x) Allsupplypinsmusthavethesamevoltage –0.3 3.9 V InputRFlevel +10 dBm Voltageonanydigitalpin Max3.9V –0.3 VDD+0.3 V Voltageonanalogpins(includingDCPLpins) –0.3 2.0 V Storagetemperature,T –40 125 °C stg (1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings only,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedundergeneralcharacteristicsisnot implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.Stressesbeyondthoselisted underabsolutemaximumratingsmaycausepermanentdamagetothedevice.Thesearestressratingsonly,andfunctionaloperationof thedeviceattheseoranyotherconditionsbeyondthoseindicatedunderrecommendedoperatingconditionsisnotimplied.Exposureto absolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. (2) AllvoltagevaluesarewithrespecttoV unlessotherwisenoted. SS 4.1 ESD Ratings VALUE UNIT Electrostatic Humanbodymodel(HBM),perANSI/ESDA/JEDECJS001(1) ±2 kV V discharge(ESD) ESD performance Chargeddevicemodel(CDM),perJESD22-C101(2) Allpins ±500 V (1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess. (2) JEDECdocumentJEP157statesthat250-VHBMallowssafemanufacturingwithastandardESDcontrolprocess. 4.2 Recommended Operating Conditions (General Characteristics) overoperatingfree-airtemperaturerange(unlessotherwisenoted) MIN NOM MAX UNIT Voltagesupplyrange Allsupplypinsmusthavethesamevoltage 2.0 3.6 V Voltageondigitalinputs 0 VDD V Ambienttemperaturerange –40 85 °C 4.3 RF Characteristics overoperatingfree-airtemperaturerange(unlessotherwisenoted) PARAMETER TESTCONDITIONS MIN TYP MAX UNIT 820 960 410 480 SeeSWRA398,UsingtheCC112x/CC1175at274to (273.3) (320) Frequencybands 320MHz,formoreinformation MHz 164 192 ContactTIformoreinformationabouttheuseofthese (205) (240) frequencybands (136.7) (160) In820–950MHzband 30 Frequencyresolution In410–480MHzband 15 Hz In164–192MHzband 6 Packetmode 0 200 Datarate kbps Transparentmode 0 100 Dataratestepsize 1e-4 bps Copyright©2011–2015,TexasInstrumentsIncorporated Specifications 7 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 4.4 Power Consumption Summary T =25°C,VDD=3.0Vifnothingelsestated A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT CURRENTCONSUMPTION:STATICMODES 0.12 1 Powerdownwithretention µA Low-powerRCoscillatorrunning 0.5 XOFFmode Crystaloscillator/TCXOdisabled 170 µA Clockrunning,systemwaitingwithnoradio IDLEmode 1.3 mA activity CURRENTCONSUMPTION,TRANSMITMODES TXcurrentconsumption+10dBm 37 mA 950-MHzband(high-performancemode) TXcurrentconsumption0dBm 26 mA TXcurrentconsumption+14dBm 868-,915-,and920-MHzbands(high- 45 mA TXcurrentconsumption+10dBm performancemode) 34 mA TXcurrentconsumption+15dBm 50 mA TXcurrentconsumption+14dBm 434-MHzband(high-performancemode) 45 mA TXcurrentconsumption+10dBm 34 mA TXcurrentconsumption+15dBm 54 mA TXcurrentconsumption+14dBm 169-MHzband(high-performancemode) 49 mA TXcurrentconsumption+10dBm 41 mA LOW-POWERMODE(1) TXcurrentconsumption+10dBm 32 mA CURRENTCONSUMPTION,RECEIVEMODE(HIGH-PERFORMANCEMODE)(1) 1.2kbps,4-bytepreamble UsingRXsniffmode,wherethereceiver 2 RXwaitforsync wakesupatregularintervalstolookforan mA 38.4kbps,4-bytepreamble incomingpacket(2) 13.4 433-,868-,915-,920-,and RXpeakcurrent 950–MHzbands Peakcurrentconsumptionduringpacket 22 mA receptionatthesensitivitythreshold 169-MHzband 23 Averagecurrentconsumption 50kbps,5-bytepreamble,40-kHzRC Checkfordatapacketevery1secondusingWake 15 µA oscillatorusedassleeptimer onRadio CURRENTCONSUMPTION,RECEIVEMODE(LOW-POWERMODE)(1) RXpeakcurrent Peakcurrentconsumptionduringpacket Low-powerRX 1.2kbps 17 mA receptionatthesensitivitylevel mode (1) T =25°C,VDD=3.0V,f =869.5MHzifnothingelsestated. A c (2) Seethesniffmodedesignnoteformoreinformation(SWRA428). 8 Specifications Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 4.5 Receive Parameters AllRXmeasurementsmadeattheantennaconnector,toabiterrorrate(BER)limitof1%. PARAMETER TESTCONDITIONS MIN TYP MAX UNIT GENERALRECEIVEPARAMETERS(HIGH-PERFORMANCEMODE)(1) Saturation +10 dBm Digitalchannelfilterprogrammablebandwidth 8 200 kHz IIP3,normalmode Atmaximumgain –14 dBm IIP3,highlinearitymode Using6-dBgainreductioninfrontend –8 dBm Withcarriersensedetectionenabledandassuming ±12% Datarateoffsettolerance 4-bytepreamble Withcarriersensedetectiondisabled ±0.2% Spurious 1–13GHz(VCOleakageat3.5GHz) Radiatedemissionsmeasuredaccordingto –56 dBm emissions 30MHzto1GHz ETSIEN300220,fc=869.5MHz <–57 60+j60/ 868-,915-,and920-MHzbands 30+j30 Optimum 100+j60/ source 433-MHzband (Differentialorsingle-endedRXconfigurations) Ω 50+j30 impedance 140+j40/ 169-MHzband 70+j20 RXPERFORMANCEIN950-MHZBAND(HIGH-PERFORMANCEMODE)(2) 1.2kbps,DEV=4kHzCHF=10kHz(4) –120 1.2kbps,DEV=20kHzCHF=50kHz(4) –114 Sensitivity(3) 5C0HkFb=ps1020GFkHSzK(,4)DEV=25kHz, –107 dBm 200kbps,DEV=83kHz(outersymbols), CHF=200kHz(4),4GFSK(5) –100 ±12.5kHz(adjacentchannel) 51 ±25kHz(alternatechannel) 52 1.2kbps2FSK,12.5-kHzchannel separation,4-kHzdeviation, ±1MHz 73 10-kHzchannelfilter ±2MHz 76 ±10MHz 81 ±50kHz(adjacentchannel) 47 +100kHz(alternatechannel) 48 1.2kbps2FSK,50-kHzchannel separation,20-kHzdeviation, ±1MHz 69 50-kHzchannelfilter ±2MHz 71 Blocking ±10MHz 78 and dB Selectivity ±200kHz(adjacentchannel) 43 50kbps2GFSK,200-kHzchannel ±400kHz(alternatechannel) 51 separation,25-kHzdeviation, ±1MHz 62 100-kHzchannelfilter(Samemodulation formatas802.15.4gMandatoryMode) ±2MHz 65 ±10MHz 71 ±200kHz(adjacentchannel) 37 ±400kHz(alternatechannel) 44 200kbps4GFSK,83-kHzdeviation(outer ±1MHz 55 symbols),200-kHzchannelfilter,zeroIF ±2MHz 58 ±10MHz 64 (1) T =25°C,VDD=3.0V,f =869.5MHzifnothingelsestated. A c (2) T =25°C,VDD=3.0Vifnothingelsestated. A (3) SensitivitycanbeimprovediftheTXandRXmatchingnetworksareseparated. (4) DEVisshortfordeviation,CHFisshortforChannelFilterBandwidth (5) BT=0.5isusedinallGFSKmeasurements Copyright©2011–2015,TexasInstrumentsIncorporated Specifications 9 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com Receive Parameters (continued) AllRXmeasurementsmadeattheantennaconnector,toabiterrorrate(BER)limitof1%. PARAMETER TESTCONDITIONS MIN TYP MAX UNIT RXPERFORMANCEIN868-,915-,AND920-MHZBANDS(HIGH-PERFORMANCEMODE)(2) 300bpswithcodinggain(usingaPNspreading sequencewith4chipsperdatabit)DEV=4kHz –127 CHF=10kHz(4) 1.2kbps,DEV=4kHzCHF=10kHz(4) –123 1.2kbps,DEV=10kHzCHF=42kHz(4) –120 1.2kbps,DEV=20kHzCHF=50kHz(4) –117 Sensitivity dBm 4.8kbpsOOK –114 38.4kbps,DEV=20kHzCHF=100kHz(4) –110 50kbps2GFSK,DEV=25kHz, CHF=100kHz(4) –110 200kbps,DEV=83kHz(outersymbols), CHF=200kHz(4),4GFSK –103 ±12.5kHz(adjacentchannel) 54 ±25kHz(alternatechannel) 54 1.2-kbps2-FSK,12.5-kHzchannel separation,4-kHzdeviation, ±1MHz 75 10-kHzchannelfilter ±2MHz 79 ±10MHz 87 1.2-kbps2-FSK,12.5-kHzchannel ±1kHz 78 separation,usingsettingsoptimizedfor ±2kHz 82 blockingperformance (3-kHzdeviation,7.8-kHzchannelfilter, ±8MHz 88 minimumloopbandwidth) ±10MHz 88 ±50kHz(adjacentchannel) 48 +100kHz(alternatechannel) 48 1.2-kbps2-FSK,50-kHzchannel separation,20-kHzdeviation, ±1MHz 69 50-kHzchannelfilter ±2MHz 74 ±10MHz 81 Blocking and +100kHz(adjacentchannel) 42 dB Selectivity ±200kHz(alternatechannel) 43 38.4-kbps2-GFSK,100-kHzchannel separation,20-kHzdeviation,100-kHz ±1MHz 62 channelfilter ±2MHz 66 ±10MHz 74 ±200kHz(adjacentchannel) 43 50-kbps2-GFSK,200-kHzchannel ±400kHz(alternatechannel) 50 separation,25-kHzdeviation,100-kHz channelfilter ±1MHz 61 (Samemodulationformatas802.15.4g ±2MHz 65 MandatoryMode) ±10MHz 74 ±200kHz(adjacentchannel) 36 ±400kHz(alternatechannel) 44 200-kbps4-GFSK,83-kHzdeviation(outer ±1MHz 55 symbols),200-kHzchannelfilter,zeroIF ±2MHz 59 ±10MHz 67 1.2kbps,DEV=4kHzCHF=10kHz(4),imageat Imagerejection(imagecompensationenabled) 54 dB –125kHz 10 Specifications Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 Receive Parameters (continued) AllRXmeasurementsmadeattheantennaconnector,toabiterrorrate(BER)limitof1%. PARAMETER TESTCONDITIONS MIN TYP MAX UNIT RXPERFORMANCEIN434-MHZBAND(HIGH-PERFORMANCEMODE)(2) 1.2kbps,DEV=4kHzCHF=10kHz(4) –123 50kbps2GFSK,DEV=25kHz, Sensitivity –109 dBm CHF=100kHz 1.2kbps,DEV=20kHzCHF=50kHz(4) –116 ±12.5kHz(adjacentchannel) 60 ±25kHz(alternatechannel) 60 1.2kbps2FSK,12.5-kHzchannel separation,4-kHzdeviation, ±1MHz 79 10-kHzchannelfilter ±2MHz 82 ±10MHz 91 ±50kHz(adjacentchannel) 54 +100kHz(alternatechannel) 54 Blocking 1.2kbps2FSK,50-kHzchannel and separation,20-kHzdeviation, ±1MHz 74 dB Selectivity 50-kHzchannelfilter ±2MHz 78 ±10MHz 86 +100kHz(adjacentchannel) 47 ±200kHz(alternatechannel) 50 38.4kbps2GFSK,100-kHzchannel separation,20-kHzdeviation, ±1MHz 67 100-kHzchannelfilter ±2MHz 71 ±10MHz 78 RXPERFORMANCEIN169-MHZBAND(HIGH-PERFORMANCEMODE)(2) 1.2kbps,DEV=4kHzCHF=10kHz(4) –123 Sensitivity dbm 1.2kbps,DEV=20kHzCHF=50kHz(4) –117 ±12.5kHz(adjacentchannel) 64 ±25kHz(alternatechannel) 66 1.2kbps2FSK,12.5-kHzchannel separation,4-kHzdeviation, ±1MHz 82 10-kHzchannelfilter ±2MHz 83 Blocking ±10MHz 89 and dB Selectivity ±50kHz(adjacentchannel) 60 +100kHz(alternatechannel) 60 1.2kbps2FSK,50-kHzchannel separation,20-kHzdeviation, ±1MHz 76 50-kHzchannelfilter ±2MHz 77 ±10MHz 83 Spurious 1.2kbps2FSK,12.5-kHzchannel response separation,4-kHzdeviation, 70 dB rejection 10-kHzchannelfilter 1.2kbps,DEV=4kHzCHF=10kHz(4),imageat Imagerejection(imagecompensationenabled) 66 dB –125kHz Copyright©2011–2015,TexasInstrumentsIncorporated Specifications 11 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com Receive Parameters (continued) AllRXmeasurementsmadeattheantennaconnector,toabiterrorrate(BER)limitof1%. PARAMETER TESTCONDITIONS MIN TYP MAX UNIT RXPERFORMANCEINLOW-POWERMODE(1) 1.2kbps,DEV=4kHzCHF=10kHz(4) –111 38.4kbps,DEV=50kHzCHF=100kHz(4) –99 Sensitivity dBm 50kbps2GFSK,DEV=25kHz, CHF=100kHz(4) –99 ±12.5kHz(adjacentchannel) 46 ±25kHz(alternatechannel) 46 1.2kbps2FSK,12.5-kHzchannel separation,4-kHzdeviation, ±1MHz 73 10-kHzchannelfilter ±2MHz 78 ±10MHz 79 ±50kHz(adjacentchannel) 43 +100kHz(alternatechannel) 45 1.2kbps2FSK,50-kHzchannel separation,20-kHzdeviation, ±1MHz 71 50-kHzchannelfilter ±2MHz 74 Blocking ±10MHz 75 and dB Selectivity +100kHz(adjacentchannel) 37 +200kHz(alternatechannel) 43 38.4kbps2GFSK,100-kHzchannel separation,20-kHzdeviation,100-kHz ±1MHz 58 channelfilter ±2MHz 62 +10MHz 64 +200kHz(adjacentchannel) 43 50kbps2GFSK,200-kHzchannel +400kHz(alternatechannel) 52 separation,25-kHzdeviation,100-kHz channelfilter ±1MHz 60 (Samemodulationformatas802.15.4g ±2MHz 64 MandatoryMode) ±10MHz 65 Saturation +10 dBm 4.6 Transmit Parameters T =25°C,VDD=3.0V,f =869.5MHzifnothingelsestated A c PARAMETER TESTCONDITIONS MIN TYP MAX UNIT At950MHz +12 At915-and920-MHz +14 At915-and920-MHzwithVDD=3.6V +15 At868MHz +15 Maximumoutputpower At868MHzwithVDD=3.6V +16 dBm At433MHz +15 At433MHzwithVDD=3.6V +16 At169MHz +15 At169MHzwithVDD=3.6V +16 Withinfinestepsizerange –11 Minimumoutputpower dBm Withincoarsestepsizerange –40 Outputpowerstepsize Withinfinestepsizerange 0.4 dB 4-GFSK9.6kbpsin12.5-kHzchannel,measuredin 100-Hzbandwidthat434MHz(FCCPart90MaskD –75 compliant) Adjacentchannelpower dBc 4-GFSK9.6kbpsin12.5-kHzchannel,measuredin –58 8.75-kHzbandwidth(ETSIEN300220compliant) 2-GFSK2.4kbpsin12.5-kHzchannel,1.2-kHzdeviation –61 Spuriousemissions <–60 dBm (notincludingharmonics) 12 Specifications Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 Transmit Parameters (continued) T =25°C,VDD=3.0V,f =869.5MHzifnothingelsestated A c PARAMETER TESTCONDITIONS MIN TYP MAX UNIT 2ndHarm,169MHz –39 3rdHarm,169MHz –58 2ndHarm,433MHz –56 3rdHarm,433MHz –51 Transmissionat+14dBm(ormaximumallowedin dBm 2ndHarm,450MHz applicablebandwherethisislessthan+14dBm)usingTI –60 referencedesignEmissionsmeasuredaccordingtoARIB 3rdHarm,450MHz –45 T-96in950-MHzband,ETSIEN300-220in170-,433-, Harmonics 2ndHarm,868MHz and868-MHzbandsandFCCpart15.247in450-and –40 915-MHzbandFourthharmonicin915-MHzbandwill 3rdHarm,868MHz –42 requireextrafilteringtomeetFCCrequirementsif 2ndHarm,915MHz transmittingforlongintervals 56 (>50-msperiods) 3rdHarm,915MHz 52 dBµV/m 4thHarm,915MHz 60 2ndHarm,950MHz –58 dBm 3rdHarm,950MHz –42 868-,915-,and920-MHz 35+j35 Optimum bands load Ω 433MHzband 55+j25 impedance 169MHzband 80+j0 4.7 PLL Parameters T =25°C,VDD=3.0Vifnothingelsestated A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT HIGH-PERFORMANCEMODE ±10kHzoffset –99 Phasenoisein950-MHzband ±100kHzoffset –99 dBc/Hz ±1MHzoffset –123 ±10kHzoffset –99 Phasenoisein868-,915-,920-MHzbands ±100kHzoffset –100 dBc/Hz ±1MHzoffset –122 ±10kHzoffset –106 Phasenoisein433-MHzband ±100kHzoffset –107 dBc/Hz ±1MHzoffset –127 ±10kHzoffset –111 Phasenoisein169-MHzband ±100kHzoffset –116 dBc/Hz ±1MHzoffset –135 Copyright©2011–2015,TexasInstrumentsIncorporated Specifications 13 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com PLL Parameters (continued) T =25°C,VDD=3.0Vifnothingelsestated A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LOW-POWERMODE(1) ±10kHzoffset –90 Phasenoisein950-MHzband ±100kHzoffset –92 dBc/Hz ±1MHzoffset –124 ±10kHzoffset –95 Phasenoisein868-,915-,920-MHzbands ±100kHzoffset –95 dBc/Hz ±1MHzoffset –124 ±10kHzoffset –98 Phasenoisein433-MHzband ±100kHzoffset –102 dBc/Hz ±1MHzoffset –129 ±10kHzoffset –106 Phasenoisein169-MHzband ±100kHzoffset –110 dBc/Hz ±1MHzoffset –136 (1) T =25°C,VDD=3.0V,f =869.5MHzifnothingelsestated A c 4.8 32-MHz Clock Input (TCXO) T =25°C,VDD=3.0Vifnothingelsestated A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT Clockfrequency 31.25 32 33.6 MHz Highinputvoltage TCXOwithCMOSoutput 1.4 VDD TCXOwithCMOSoutput(1) directlycoupledtopin V Lowinputvoltage EXT_OSC 0 0.6 TCXOclippedsineoutput Clockinputamplitude Clippedsineoutput connectedtopinEXT_OSC 0.8 1.5 V (peak-to-peak) throughseriescapacitor (1) ForTCXOwithCMOSoutputriseandfalltime,seeSection4.15. 4.9 32-MHz Crystal Oscillator T =25°C,VDD=3.0Vifnothingelsestated A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT Itisexpectedthattherebewilldegraded sensitivityatmultiplesofXOSC/2inRX,and anincreaseinspuriousemissionswhenthe RFchannelisclosetomultiplesofXOSCin Crystalfrequency TX.WerecommendthattheRFchannelis 31.25 32 33.6 MHz keptRX_BW/2awayfromXOSC/2inRX, andthatthelevelofspuriousemissionsbe evaluatediftheRFchanneliscloserthan1 MHztomultiplesofXOSCinTX. Loadcapacitance(C ) 10 pF L ESR Simulatedoveroperatingconditions 60 Ω 4.10 32-kHz Clock Input T =25°C,VDD=3.0Vifnothingelsestated A PARAMETER MIN TYP MAX UNIT Clockfrequency 32 kHz 32-kHzclockinputpininputhighvoltage 0.8×VDD V 32-kHzclockinputpininputhighvoltage 0.2×VDD V 14 Specifications Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 4.11 32-kHz RC Oscillator T =25°C,VDD=3.0Vifnothingelsestated A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT Frequency Aftercalibration 32 kHz Relativetofrequencyreference Frequencyaccuracyaftercalibration ±0.1% (32-MHzcrystalorTCXO) Initialcalibrationtime(1) (1) ForInitialcalibrationtimeofthe32-kHzRCOscillator,seeSection4.15. 4.12 I/O and Reset T =25°C,VDD=3.0Vifnothingelsestated A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT Logicinputhighvoltage 0.8×VDD V Logicinputlowvoltage 0.2×VDD V Logicoutputhighvoltage 0.8×VDD V At4-mAoutputloadorless Logicoutputlowvoltage 0.2×VDD V Power-onresetthreshold VoltageonDVDDpin 1.3 V 4.13 Temperature Sensor T =25°C,VDD=3.0Vifnothingelsestated(1) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT Temperaturesensorrange –40 85 °C Changeinsensoroutputvoltageversuschangein Temperaturecoefficient 2.66 mV/°C temperature TypicalsensoroutputvoltageatT =25°C, Typicaloutputvoltage A 794 mV VDD=3.0V Changeinsensoroutputvoltageversuschangein VDDcoefficient 1.17 mV/V VDD (1) TheCC1120devicecanbeconfiguredtoprovideavoltageproportionaltotemperatureonGPIO1.Thetemperaturecanbeestimated bymeasuringthisvoltage(seeSection4.13,TemperatureSensor).Formoreinformation,refertoCC112X/CC120XOn-Chip TemperatureSensor(SWRA415). 4.14 Thermal Resistance Characteristics for RHB Package NAME DESCRIPTION °C/W(1) RΘ Junction-to-case(top) 21.1 JC(top) RΘ Junction-to-board 5.3 JB RΘ Junction-to-freeair 31.3 JA Psi Junction-to-packagetop 0.2 JT Psi Junction-to-board 5.3 JB RΘ Junction-to-case(bottom) 0.8 JC(bot) (1) ThesevaluesarebasedonaJEDEC-defined2S2Psystem(withtheexceptionoftheThetaJC[RΘ ]value,whichisbasedona JC JEDEC-defined1S0Psystem)andwillchangebasedonenvironmentaswellasapplication.Formoreinformation,seethese EIA/JEDECstandards: • JESD51-2,IntegratedCircuitsThermalTestMethodEnvironmentalConditions-NaturalConvection(StillAir) • JESD51-3,LowEffectiveThermalConductivityTestBoardforLeadedSurfaceMountPackages • JESD51-7,HighEffectiveThermalConductivityTestBoardforLeadedSurfaceMountPackages • JESD51-9,TestBoardsforAreaArraySurfaceMountPackageThermalMeasurements Powerdissipationof40mWandanambienttemperatureof25ºCisassumed. Copyright©2011–2015,TexasInstrumentsIncorporated Specifications 15 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 4.15 Timing Requirements T =25°C,VDD=3.0V,f =869.5MHzifnothingelsestated A c PARAMETER TESTCONDITIONS MIN NOM MAX UNIT PowerdowntoIDLE Dependsoncrystal 0.4 ms Calibrationdisabled 166 IDLEtoRX/TX µs Calibrationenabled 461 RX/TXturnaround 50 µs CalibratewhenleavingRX/TX 296 enabled RX/TXtoIDLEtime µs CalibratewhenleavingRX/TX 0 disabled Frequencysynthesizercalibration WhenusingSCALstrobe 391 µs TimefromstartRXuntilvalidRSSI 12.5-kHzchannels 4.6 Includinggainsettling(functionofchannelbandwidth.Programmablefor ms trade-offbetweenspeedandaccuracy) 200-kHzchannels 0.3 32-MHzCLOCKINPUT(TCXO)(1) TCXOwithCMOSoutput Riseandfalltime 2 ns 32-kHzRCOSCILLATOR(2) Initialcalibrationtime 1.6 ns (1) SeeSection4.8formoreinformationaboutthe32-MHzClockInput(TCXO). (2) SeeSection4.11formoreinformationaboutthe32-kHzRCOscillator. 4.16 Regulatory Standards PERFORMANCEMODE FREQUENCYBAND SUITABLEFORCOMPLIANCEWITH ARIBT-96 ARIBT-108 ETSIEN300220category2 ETSIEN54-25 820–960MHz(1) FCCPART101 FCCPART24SUBMASKD FCCPART15.247 FCCPART15.249 FCCPART90MASKG High-performancemode FCCPART90MASKJ ARIBT-67 ARIBRCRSTD-30 410–480MHz(2) ETSIEN300220category1 FCCPART90MASKD FCCPART90MASKG 164–192MHz(2) ETSIEN300220category1 FCCPART90MASKD ETSIEN300220category2 820–960MHz FCCPART15.247 FCCPART15.249 Low-powermode 410–480MHz ETSIEN300220category2 164–192MHz ETSIEN300220category2 (1) Performancealsosuitableforsystemstargetingmaximumallowedoutputpowerintherespectivebands,usingarangeextendersuch astheCC1190device (2) Performancealsosuitableforsystemstargetingmaximumallowedoutputpowerintherespectivebands,usingarangeextender 16 Specifications Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 4.17 Typical Characteristics T =25°C,VDD=3.0V,f =869.5MHzifnothingelsestated. A c All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470rev.1.0.1,orCC1120EM_169rev.1.2. Figure4-17wasmeasuredatthe50-Ω antennaconnector. -120 -120 -121 m) m) -121 B B d -122 d vity ( vity ( -122 siti -123 siti n n Se Se -123 -124 -125 -124 -40 0 40 80 2 2.5 3 3.5 Temperature(ºC) SupplyVoltage(V) 10-kHzChannel 10-kHzChannel 1.2kbps, 4-kHzDeviation, 1.2kbps, 4-kHzDeviation, FilterBandwidth FilterBandwidth Figure4-1.SensitivityvsTemperature Figure4-2.SensitivityvsVoltage -114 23.2 -116 22.8 m) -118 A) B m 22.4 d -120 ( sitivity ( --112242 Current 22 n 21.6 Se -126 RX 21.2 -128 -130 20.8 3 5 7 9 11 13 15 17 -130 -80 -30 20 SyncWordDetectThreshold InputLevel(dBm) 1.2kbps, 4-kHzDeviation, 1F0ilt-ekrHBzaCnhdawnidntehl 1.2kbps, 4-kHzDeviation, 1F0ilt-ekrHBzaCnhdawnidntehl Figure4-3.SyncWordSensitivityvsVoltage Figure4-4.RXCurrentvsInputLevel 70 70 60 60 50 50 Selectivity (dB) 12340000 Selectivity(dB) 12340000 0 0 -10 -20 -10 169.9 169.95 170 170.05 170.1 859.9 859.95 860 860.05 860.1 Frequency(MHz) Frequency(MHz) 1.2kbps, 4-kHzDeviation, 1F0ilt-ekrHBzaCnhdawnidntehl 1.2kbps, 4-kHzDeviation, 1F0ilt-ekrHBzaCnhdawnidntehl Figure4-5.SelectivityvsOffsetFrequency(12.5-kHzChannels) Figure4-6.SelectivityvsOffsetFrequency(12.5-kHzChannels) Copyright©2011–2015,TexasInstrumentsIncorporated Specifications 17 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com Typical Characteristics (continued) 100 17 80 m) 16.5 60 B d ( SSI 40 ower 16 R 20 P ut 0 p ut 15.5 O -20 -40 15 -150 -100 -50 0 -40 0 40 80 InputLevel(dBm) Temperature(ºC) 10-kHzChannelFilter MaxSetting, 170MHz, 3.6V 1.2kbps, 4-kHzDeviation, Bandwidth Figure4-7.RSSIvsInputLevel Figure4-8.OutputPowervsTemperature 18 20 16 10 m) m) B B 0 d 14 d er( er ( -10 w 12 w o o P P -20 utput 10 Output -30 O 8 -40 6 -50 2 2.5 3 3.5 7F 7B 77 73 6F 6B 67 63 5F 5B 57 53 4F 4B 47 43 SupplyVoltage(V) PApower setting MaxSetting, 170MHz, Figure4-9.OutputPowervsVoltage Figure4-10.OutputPowerat868MHzvsPAPowerSetting 60 50 A) m 40 ( nt e 30 urr C X 20 T 10 0 F B 7 3 F B 7 3 F B 7 3 F B 7 3 7 7 7 7 6 6 6 6 5 5 5 5 4 4 4 4 PApower setting Figure4-11.TXCurrentat868MHz Figure4-12.PhaseNoisein868-MHzBand vsPAPowerSetting 18 Specifications Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 Typical Characteristics (continued) 9.6kbpsin12.5-kHzChannel 1.2kbps2-FSK, DEV=4kHz Figure4-13.FCCPart90MaskD Figure4-14.EyeDiagram 3.1 1400 V) V) e( 2.9 (m 1200 Voltag 22..57 oltage 1000 h V 800 Hig 2.3 ow Output 12..91 OutputL 460000 GPIO 1.7 GPIO 200 1.5 0 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 Current(mA) Current(mA) Figure4-15.GPIOOutputHighVoltagevsCurrentBeingSourced Figure4-16.GPIOOutputLowVoltagevsCurrentBeingSinked Figure4-17.OutputPowervsLoadImpedance(+14-dBmSetting) Copyright©2011–2015,TexasInstrumentsIncorporated Specifications 19 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 5 Detailed Description 5.1 Block Diagram Figure5-1showsthesystemblockdiagramoftheCC1120devices. CC112X (optcioloncakl 3in2tpkHutz) autUo-ltcraal ilborwa tpeodw ReCr 3o2skcHillza tor Power on reset 4Rk ObyMte MUalitnra R loawdMMi opAC oRCUwCoenrt r1o6l Ubnit it Saenrdia dl acotSanP finiIg tuerrafaticoen CSn (chip select) SI (serial input) System bus Interrupt and SO (serial output) IO handler SCLK (serial clock) EnWhaankcee Ode nuW lRtOraaRd loiow t ipmoewrer Batettmerpy sseennssoorr / Csotnaftiugsu rraetgioisnte arnsd F2IF5bO6u f bfReyArteM aPnadc FkIeFtO h acnodnlterorl (optional GPIO0-3) RF and DSP frontend Output power ramping and OOK / ASK modulation (optional autodetected external XOSC / TCXO) PA e1f4ficdiBemnc yh iPghA QI FuFllyre inqtueegnracyte Sdy Fnrtahcetsioiznearl-N Modulator sDigantaa li ncthearifna caec cweitshs XOSC XXOOSSCC__QQ12 90dB dynamic LNA_P ifamp range ADC (optional bit clock) HighL lNinAearity Channel filter Cordic Highly dfleemxiboldeu FlaStoKr / OOK (optional low jitter serial LNA_N ifamp 90radnBg dey AnDamCic dparotato ocoultsp)ut for legacy AGC (optional GPIO for Automatic Gain Control, 60dB VGA range antenna diversity) RSSI measurements and carrier sense detection Figure5-1.SystemBlockDiagram 5.2 Frequency Synthesizer At the center of the CC1120 device there is a fully integrated, fractional-N, ultra-high-performance frequency synthesizer. The frequency synthesizer is designed for excellent phase noise performance, providing very high selectivity and blocking performance. The system is designed to comply with the most stringentregulatoryspectralmasksatmaximumtransmitpower. Either a crystal can be connected to XOSC_Q1 and XOSC_Q2, or a TCXO can be connected to the EXT_XOSC input. The oscillator generates the reference frequency for the synthesizer, as well as clocks for the analog-to-digital converter (ADC) and the digital part. To reduce system cost, CC1120 device has high-accuracy frequency estimation and compensation registers to measure and compensate for crystal inaccuracies. This compensation enables the use of lower cost crystals. If a TCXO is used, the CC1120 device automatically turns on and off the TCXO when needed to support low-power modes and Wake-On- Radiooperation. 20 DetailedDescription Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 5.3 Receiver The CC1120 device features a highly flexible receiver. The received RF signal is amplified by the low- noise amplifier (LNA) and is down-converted in quadrature (I/Q) to the intermediate frequency (IF). At IF, theI/Qsignalsaredigitizedbythehighdynamic-rangeADCs. An advanced automatic gain control (AGC) unit adjusts the front-end gain, and enables the CC1120 device to receive strong and weak signals, even in the presence of strong interferers. High-attenuation channels and data filtering enable reception with strong neighbor channel interferers. The I/Q signal is convertedtoaphaseandmagnitudesignaltosupporttheFSKandOOKmodulationschemes. NOTE A unique I/Q compensation algorithm removes any problem of I/Q mismatch, thus avoiding time-consumingandcostlyI/Qimagecalibrationsteps. TheCC1120deviceonlyrequirespreambletosettletheAGC.Theminimumnumberofpreamblerequired is0.5byte. 5.4 Transmitter The CC1120 transmitter is based on direct synthesis of the RF frequency (in-loop modulation). To use the spectrum effectively, the CC1120 device has extensive data filtering and shaping in TX mode to support high throughput data communication in narrowband channels. The modulator also controls power ramping toremoveissuessuchasspectralsplatteringwhendrivingexternalhigh-powerRFamplifiers. 5.5 Radio Control and User Interface The CC1120 digital control system is built around the main radio control (MARC), which is implemented using an internal high-performance, 16-bit ultra-low-power processor. MARC handles power modes, radio sequencing,andprotocoltiming. A 4-wire SPI serial interface is used for configuration and data buffer access. The digital baseband includes support for channel configuration, packet handling, and data buffering. The host MCU can stay in power-down mode until a valid RF packet is received. This greatly reduces power consumption. When the hostMCUreceivesavalidRFpacket,itburst-readsthedata.Thisreducestherequiredcomputingpower. The CC1120 radio control and user interface are based on the widely used CC1101 transceiver. This relationship enables an easy transition between the two platforms. The command strobes and the main radiostatesarethesameforthetwoplatforms. Forlegacyformats,theCC1120devicealsosupportstwoserialmodes. • Synchronous serial mode: The CC1120 device performs bit synchronization and provides the MCU withabitclockwithassociateddata. • Transparent mode: The CC1120 device outputs the digital baseband signal using a digital interpolation filtertoeliminatejitterintroducedbydigitalfilteringanddemodulation. 5.6 Enhanced Wake-On-Radio (eWOR) eWOR, using a flexible integrated sleep timer, enables automatic receiver polling with no intervention from the MCU. When the CC1120 device enters RX mode, it listens and then returns to sleep if a valid RF packet is not received. The sleep interval and duty cycle can be configured to make a trade-off between network latency and power consumption. Incoming messages are time-stamped to simplify timer re- synchronization. The eWOR timer runs off an ultra-low-power 32-kHz RC oscillator. To improve timing accuracy, the RC oscillatorcanbeautomaticallycalibratedtotheRFcrystalinconfigurableintervals. Copyright©2011–2015,TexasInstrumentsIncorporated DetailedDescription 21 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 5.7 Sniff Mode The CC1120 device supports quick start up times, and requires few preamble bits. Sniff mode uses these conditionstodramaticallyreducethecurrentconsumptionwhilethereceiveriswaitingfordata. Because the CC1120 device can wake up and settle much faster than the duration of most preambles, it is not required to be in RX mode continuously while waiting for a packet to arrive. Instead, the enhanced Wake-On-Radio feature can be used to put the device into sleep mode periodically. By setting an appropriate sleep time, the CC1120 device can wake up and receive the packet when it arrives with no performance loss. This sequence removes the need for accurate timing synchronization between transmitter and receiver, and lets the user trade off current consumption between the transmitter and receiver. Formoreinformation,seethesniffmodedesignnote(SWRA428). 5.8 Antenna Diversity Antenna diversity can increase performance in a multipath environment. An external antenna switch is required. The CC1201 device uses one of the GPIO pins to automatically control the switch. This device alsosupportsdifferentialoutputcontrolsignalstypicallyusedinRFswitches. If antenna diversity is enabled, the GPIO alternates between high and low states until a valid RF input signal is detected. An optional acknowledge packet can be transmitted without changing the state of the GPIO. An incoming RF signal can be validated by received signal strength or by using the automatic preamble detector. Using the automatic preamble detector ensures a more robust system and avoids the need to setadefinedsignalstrengththreshold(suchathresholdsetsthesensitivitylimitofthesystem). 22 DetailedDescription Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 5.9 WaveMatch Advanced capture logic locks onto the synchronization word and does not require preamble settling bytes. Therefore,receiversettlingtimeisreducedtothesettlingtimeoftheAGC,typically4bits. The WaveMatch feature also greatly reduces false sync triggering on noise, further reducing the power consumption and improving sensitivity and reliability. The same logic can also be used as a high- performancepreambledetectortoreliablydetectavalidpreambleinthechannel. SeeSWRC046formoreinformation. Figure5-2.ReceiverConfiguratorin SmartRF™Studio Copyright©2011–2015,TexasInstrumentsIncorporated DetailedDescription 23 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 6 Application, Implementation, and Layout NOTE InformationinthefollowingApplicationssectionisnotpartoftheTIcomponentspecification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test theirdesignimplementationtoconfirmsystemfunctionality. 6.1 Application Information 6.1.1 Typical Application Circuit NOTE Thissectionisintendedonlyasanintroduction.ThereferencedesignslistedinSection6.1.2 showeverythingrequired. Very few external components are required for the operation of the CC1120 device. Figure 6-1 shows a typical application circuit. The board layout will greatly influence the RF performance of the CC1120 device.Figure6-1doesnotshowdecouplingcapacitorsforpowerpins. Optional 32 MHz XOSC/ crystal TCXO d d d d d d v v v 2 1 0 9 8 7 6 5 3 3 3 2 2 2 2 2 (optionfarol mco CntCro11l 2p0in) vdd 1 VDD_GUARDEXT_XOSC XOSC_Q2 XOSC_Q1 DCPL_XOSC AVDD_XOSC AVDD_SYNTH2 DCPL_PFD_CHP AVDD_PFD_CHP LPF1 24 2 23 RESET_N LPF0 3 22 GPIO3 AVDD_SYNTH1 vdd 4 21 GPIO2 DCPL_VCO CC1120 5 20 vdd DVDD LNA_N 6 19 DCPL LNA_P 7 18 SI TRX_SW 8 17 SCLK PA SO (GPIO1) GPIO0 CSn DVDD AVDD_IF RBIAS AVDD_RF N.C. 9 10 11 12 13 14 15 16 dd v d d d d d d v v v MCU connection SPI interface and optional gpio pins Figure6-1.TypicalApplicationCircuit 24 Application,Implementation,andLayout Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 6.1.2 TI Reference Designs ThefollowingreferencedesignsareavailablefortheCC1120device: CC1120EM-868-915-RD CC1120EM868-to915-MHzReferenceDesign This RF Layout Reference Design demonstrates good decoupling and layout techniques for a low power RFdeviceoperatinginthe868-MHzand915-MHzfrequencybands. CC1120EM868/915MHzReferenceDesign (SWRC222) CC112xIPC868-and915-MHz2-layerReferenceDesign(SWRR106) CC112xIPC868-and915-MHz4-layerReferenceDesign(SWRR107) CC1120EM-169-RD CC1120EM169-MHzReferenceDesign This RF Layout Reference Design demonstrates good decoupling and layout techniques for a low power RFdeviceoperatinginthe169-MHzfrequencyband.(SWRC220) CC1120EM-420-470-RD CC1120EM420-to470-MHzReferenceDesign This RF Layout Reference Design demonstrates good decoupling and layout techniques for a low power RFdeviceoperatinginthe420-470MHzfrequencyband.(SWRC221) Copyright©2011–2015,TexasInstrumentsIncorporated Application,Implementation,andLayout 25 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 7 Device and Documentation Support 7.1 Device Support 7.1.1 Development Support 7.1.1.1 ConfigurationSoftware The CC1120 device can be configured using the SmartRF Studio software (SWRC046). The SmartRF Studio software is highly recommended for obtaining optimum register settings, and for evaluating performanceandfunctionality. 7.1.2 Device and Development-Support Tool Nomenclature To designate the stages in the product development cycle, TI assigns prefixes to the part numbers of all microprocessors (MPUs) and support tools. Each device has one of three prefixes: X, P, or null (no prefix) (for example, CC1120). Texas Instruments recommends two of three possible prefix designators for its support tools: TMDX and TMDS. These prefixes represent evolutionary stages of product development fromengineeringprototypes(TMDX)throughfullyqualifiedproductiondevicesandtools(TMDS). Devicedevelopmentevolutionaryflow: X Experimental device that is not necessarily representative of the final device's electrical specificationsandmaynotuseproductionassemblyflow. P Prototype device that is not necessarily the final silicon die and may not necessarily meet finalelectricalspecifications. null Productionversionofthesilicondiethatisfullyqualified. Supporttooldevelopmentevolutionaryflow: TMDX Development-support product that has not yet completed Texas Instruments internal qualificationtesting. TMDS Fullyqualifieddevelopment-supportproduct. XandPdevicesandTMDXdevelopment-supporttoolsareshippedagainstthefollowingdisclaimer: "Developmentalproductisintendedforinternalevaluationpurposes." Production devices and TMDS development-support tools have been characterized fully, and the quality andreliabilityofthedevicehavebeendemonstratedfully.TI'sstandardwarrantyapplies. Predictions show that prototype devices (X or P) have a greater failure rate than the standard production devices. Texas Instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. Only qualified production devices are to be used. TI device nomenclature also includes a suffix with the device family name. This suffix indicates the packagetype(forexample,RHB)andthetemperaturerange(forexample,blankisthedefaultcommercial temperaturerange)providesalegendforreadingthecompletedevicenameforanyCC1120device. For orderable part numbers of CC1120 devices in the QFN package types, see the Package Option Addendumofthisdocument,theTIwebsite(www.ti.com),orcontactyourTIsalesrepresentative. 26 DeviceandDocumentationSupport Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 www.ti.com SWRS112H–JUNE2011–REVISEDJULY2015 7.2 Documentation Support The following documents supplement the CC1120 transceiver. Copies of these documents are available ontheInternetatwww.ti.com.Tip:Entertheliteraturenumberinthesearchboxprovidedatwww.ti.com. SWRU295 CC112X/CC1175 Low-Power High Performance Sub-1 GHz RF Transceivers/Transmitter User'sGuide SWRA398 UsingtheCC112x/CC1175at274to320MHz SWRC046 SmartRFStudioSoftware SWRA428 CC112x/CC120xSniffModeApplicationNote SWRZ039 CC112x,CC1175SiliconErrata SWRR106 CC112xIPC868-and915-MHz2-layerReferenceDesign SWRR107 CC112xIPC868-and915-MHz4-layerReferenceDesign SWRC220 CC1120EM169-MHzReferenceDesign SWRC221 CC1120EM420-to470-MHzReferenceDesign SWRC222 CC1120EM868-to915-MHzReferenceDesign 7.2.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; seeTI'sTermsofUse. TIE2E™OnlineCommunity TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, exploreideasandhelpsolveproblemswithfellowengineers. DesignSupport TI's Design Support Quickly find helpful E2E forums along with design support tools andcontactinformationfortechnicalsupport. 7.3 Trademarks SmartRF,E2EaretrademarksofTexasInstruments. 7.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriateprecautions.Failuretoobserveproperhandlingandinstallationprocedurescancausedamage. ESDdamagecanrangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmaybemore susceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications. 7.5 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. Copyright©2011–2015,TexasInstrumentsIncorporated DeviceandDocumentationSupport 27 SubmitDocumentationFeedback ProductFolderLinks:CC1120

CC1120 SWRS112H–JUNE2011–REVISEDJULY2015 www.ti.com 8 Mechanical Packaging and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revisionofthisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. 28 MechanicalPackagingandOrderableInformation Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback ProductFolderLinks:CC1120

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CC1120RHBR ACTIVE VQFN RHB 32 3000 Green (RoHS NIPDAU | NIPDAUAG Level-3-260C-168 HR -40 to 85 CC1120 & no Sb/Br) CC1120RHBT ACTIVE VQFN RHB 32 250 Green (RoHS NIPDAU | NIPDAUAG Level-3-260C-168 HR -40 to 85 CC1120 & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 29-Mar-2020 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) CC1120RHBR VQFN RHB 32 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 29-Mar-2020 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) CC1120RHBR VQFN RHB 32 3000 350.0 350.0 43.0 PackMaterials-Page2

GENERIC PACKAGE VIEW RHB 32 VQFN - 1 mm max height 5 x 5, 0.5 mm pitch PLASTIC QUAD FLATPACK - NO LEAD Images above are just a representation of the package family, actual package may vary. Refer to the product data sheet for package details. 4224745/A www.ti.com

PACKAGE OUTLINE RHB0032E VQFN - 1 mm max height SCALE 3.000 PLASTIC QUAD FLATPACK - NO LEAD A 5.1 B 4.9 PIN 1 INDEX AREA 5.1 (0.1) 4.9 SIDE WALL DETAIL OPTIONAL ME20.000TAL THICKNESS C 1 MAX SEATING PLANE 0.05 0.00 0.08 C 2X 3.5 3.45 0.1 (0.2) TYP 9 16 EXPOSED THERMAL PAD 28X 0.5 8 17 SEE SIDE WALL DETAIL 2X 33 SYMM 3.5 0.3 32X 0.2 24 0.1 C A B 1 0.05 C 32 25 PIN 1 ID SYMM (OPTIONAL) 0.5 32X 0.3 4223442/B 08/2019 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance. www.ti.com

EXAMPLE BOARD LAYOUT RHB0032E VQFN - 1 mm max height PLASTIC QUAD FLATPACK - NO LEAD ( 3.45) SYMM 32 25 32X (0.6) 1 24 32X (0.25) (1.475) 28X (0.5) 33 SYMM (4.8) ( 0.2) TYP VIA 8 17 (R0.05) TYP 9 16 (1.475) (4.8) LAND PATTERN EXAMPLE SCALE:18X 0.07 MAX 0.07 MIN ALL AROUND ALL AROUND SOLDER MASK METAL OPENING SOLDER MASK METAL UNDER OPENING SOLDER MASK NON SOLDER MASK SOLDER MASK DEFINED DEFINED (PREFERRED) SOLDER MASK DETAILS 4223442/B 08/2019 NOTES: (continued) 4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271). 5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented. www.ti.com

EXAMPLE STENCIL DESIGN RHB0032E VQFN - 1 mm max height PLASTIC QUAD FLATPACK - NO LEAD 4X ( 1.49) (R0.05) TYP (0.845) 32 25 32X (0.6) 1 24 32X (0.25) 28X (0.5) (0.845) SYMM 33 (4.8) 8 17 METAL TYP 9 16 SYMM (4.8) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL EXPOSED PAD 33: 75% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE SCALE:20X 4223442/B 08/2019 NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. www.ti.com

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