BAW75 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS BAW75 BAW75-TAP BAW75 Single Ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 35 V RRM Reverse voltage V 25 V R Peak forward surge current t = 1 μs I 2 A p FSM Repetitive peak forward current I 450 mA FRM Forward continuous current I 300 mA F Average forward current V = 0 I 150 mA R F(AV) l = 4 mm, T = 45 °C P 440 mW L tot Power dissipation l = 4 mm, T ≤ 25 °C P 500 mW L tot THERMAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 175 °C j Storage temperature range T -65 to +175 °C stg Rev. 1.8, 13-Jul-17 1 Document Number: 85550 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BAW75 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 30 mA V 1 V F F V = 25 V I 100 nA R R Reverse current V = 25 V, T = 150 °C I 100 μA R j R I = 5 μA, t /T = 0.01, Breakdown voltage R p V 35 V t = 0.3 ms (BR) p V = 0 V, f = 1 MHz, Diode capacitance R C 4 pF V = 50 mV D HF I = I = 10 mA, i = 1 mA t 4 ns F R R rr Reverse recovery time I = 10 mA, V = 6 V, iF = 1 mA, R R= 100 Ω trr 2 ns R L PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identification 6 max. [0.024] 4 min. [0.015] 26 min. [1.024] 33..91 mmainx.. [[00..112504]] 26 min. [1.024] 1.7 [0.067] 1.3 [0.050] 0. 0. Ø Ø Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.8, 13-Jul-17 2 Document Number: 85550 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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