+3 V/+5 V/±5 V, CMOS, 8-Channel Analog Multiplexer Enhanced Product ADG658-EP FEATURES FUNCTIONAL BLOCK DIAGRAM ±2 V to ±6 V dual supply ADG658-EP 2 V to 12 V single supply <0.1 nA leakage currents (typical) S1 45 Ω typical on resistance over full signal range Rail-to-rail switching operation Single, 8 to 1 multiplexer D 16-lead TSSOP package 0.01 μA typical supply current TTL/CMOS compatible inputs S8 ENHANCED PRODUCT FEATURES 1 OF 8 DECODER Supports defense and aerospace applications (AQEC standard) Military temperature range: −55°C to +125°C SWITCHES SAH0OWAN1 FOAR2 A LEONGIC 1 INPUT. 15981-001 Controlled manufacturing baseline Figure 1. One assembly/test site GENERAL DESCRIPTION One fabrication site Enhanced product change notification The ADG658-EP is a low voltage, CMOS analog multiplexer Qualification data available on request comprised of eight single channels. The ADG658-EP switches one APPLICATIONS of eight inputs (S1 to S8) to a common output, D, as determined by the 3-bit binary address lines A0, A1, and A2. An EN input enables Automatic test equipment or disables the device. When disabled, all channels are switched off. Data acquisition systems Battery-powered systems The ADG658-EP is designed on an enhanced process that provides Communication systems lower power dissipation yet gives high switching speeds. It can Audio and video signal routing operate equally well as either a multiplexer or a demultiplexer, and Relay replacement has an input range that extends to the supplies. All channels exhibit Sample-and-hold systems break-before-make switching action, preventing momentary Industrial control systems shorting when switching channels. All digital inputs have +0.8 V to +2.4 V logic thresholds, ensuring TTL/CMOS logic compatibi- lity when using single +5 V or dual ±5 V supplies. The ADG658-EP is available in a 16-lead TSSOP package. Additional application and technical information can be found in the ADG658 data sheet. PRODUCT HIGHLIGHTS 1. Single-supply and dual-supply operation. The ADG658-EP offers high performance and is fully specified and guaranteed with ±5 V, +5 V, and +3 V supply rails. 2. Military temperature range −55°C to +125°C. 3. Low supply current, typically 0.01 µA. 4. 16-lead TSSOP package. Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com

ADG658-EP Enhanced Product TABLE OF CONTENTS Features .............................................................................................. 1 5 V Single Supply ...........................................................................3 Enhanced Product Features ............................................................ 1 2.7 V to 3.6 V Single Supply .........................................................5 Applications ....................................................................................... 1 Absolute Maximum Ratings ............................................................6 Functional Block Diagram .............................................................. 1 ESD Caution...................................................................................6 General Description ......................................................................... 1 Pin Configurations and Function Descriptions ............................7 Product Highlights ........................................................................... 1 Typical Performance Characteristics ..............................................8 Revision History ............................................................................... 2 Outline Dimensions ....................................................................... 10 Specifications ..................................................................................... 3 Ordering Guide .......................................................................... 10 Dual Supply ................................................................................... 3 REVISION HISTORY 8/2017—Revision 0: Initial Version Rev. 0 | Page 2 of 10

Enhanced Product ADG658-EP SPECIFICATIONS DUAL SUPPLY V = 5 V ± 10%, V = −5 V ± 10%, GND = 0 V, unless otherwise noted. DD SS Table 1. −55°C to Parameter +25°C +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range V to V V V = +4.5 V, V = −4.5 V SS DD DD SS On Resistance, R 45 Ω typ Source voltage (V) = ±4.5 V, source current (I) = 1 mA ON S S 75 100 Ω max On Resistance Match Between 1.3 Ω typ Channels, ∆R 3 3.5 Ω max V = 3.5 V, I = 1 mA ON S S On Resistance Flatness, R 10 Ω typ V = +5 V, V = −5 V FLAT(ON) DD SS 16 18 Ω max V = ±3 V, I = 1 mA S S LEAKAGE CURRENTS V = +5.5 V, V = −5.5 V DD SS Source Off Leakage, IS (OFF) ±0.005 nA typ Drain voltage (VD) = ±4.5 V, VS = 4.5 V ±0.2 ±5 nA max Drain Off Leakage, ID (OFF) ±0.005 nA typ VD = ±4.5 V, VS = 4.5 V ±0.2 ±5 nA max Channel On Leakage I , I (ON) ±0.005 nA typ V = V = ±4.5 V D S D S ±0.2 ±5 nA max DIGITAL INPUTS Input High Voltage, V 2.4 V min INH Input Low Voltage, V 0.8 V max INL Input Current I or I 0.005 µA typ Input voltage (V ) = V or V INL INH IN INL INH ±1 µA max Digital Input Capacitance, C 2 pF typ IN DYNAMIC CHARACTERISTICS1 Transition Time, t 80 ns typ Load resistance (R) = 300 Ω, load capacitance (C) = 35 pF TRANSITION L L 115 165 ns max V = 3 V S EN On Time, tON (EN) 80 ns typ RL = 300 Ω, CL = 35 pF 115 165 ns max V = 3 V S EN Off Time, tOFF (EN) 30 ns typ RL = 300 Ω, CL = 35 pF 45 55 ns max V = 3 V S Break-Before-Make Time Delay, t 50 ns typ R = 300 Ω, C = 35 pF BBM L L 10 ns min Source 1 voltage (V ) = 3 V, source 2 voltage (V ) = 3 V S1 S2 Charge Injection 2 pC typ V = 0 V, R = 0 Ω S S 4 pC max C = 1 nF L Off Isolation −90 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz L L Total Harmonic Distortion Plus Noise, THD + N 0.025 % typ R = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz L −3 dB Bandwidth 210 MHz R = 50 Ω, C = 5 pF L L typ Source Capacitance, C (OFF) 4 pF typ f = 1 MHz S Drain Capacitance, C (OFF) 23 pF typ f = 1 MHz D C , C (ON) 28 pF typ f = 1 MHz D S POWER REQUIREMENTS V = +5.5 V, V = −5.5 V DD SS Positive Power Supply Current, I 0.01 µA typ Digital inputs = 0 V or 5.5 V DD 1 µA max Negative Power Supply Current, I 0.01 µA typ Digital inputs = 0 V or 5.5 V SS 1 µA max 1 Guaranteed by design; not subject to production test. Rev. 0 | Page 3 of 10

ADG658-EP Enhanced Product 5 V SINGLE SUPPLY V = 5 V ± 10%, V = 0 V, GND = 0 V, unless otherwise noted. DD SS Table 2. Parameter +25°C −55°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 to V V V = 4.5 V, V = 0 V DD DD SS On Resistance, R 85 Ω typ V = 0 V to 4.5 V, I = 1 mA ON S S 150 200 Ω max On Resistance Match Between 4.5 Ω typ V = 3.5 V, I = 1 mA S S Channels, ∆R 8 10 Ω max ON On Resistance Flatness, R 13 16 Ω typ V = 5 V, V = 0 V, V = 1.5 V to 4 V, I = 1 mA FLAT(ON) DD SS S S LEAKAGE CURRENTS V = 5.5 V DD Source Off Leakage, I (OFF) ±0.005 nA typ V = 1 V/4.5 V, V = 4.5 V/1 V S S D ±0.2 ±5 nA max Drain Off Leakage, I (OFF) ±0.005 nA typ V = 1 V/4.5 V, V = 4.5 V/1 V D S D ±0.2 ±5 nA max Channel On Leakage I , I (ON) ±0.005 nA typ V = V = 1 V or 4.5 V D S S D ±0.2 ±5 nA max DIGITAL INPUTS Input High Voltage, V 2.4 V min INH Input Low Voltage, V 0.8 V max INL Input Current I or I 0.005 µA typ V = V or V INL INH IN INL INH ±1 µA max Digital Input Capacitance, C 2 pF typ IN DYNAMIC CHARACTERISTICS1 Transition Time, t 120 ns typ R = 300 Ω, C = 35 pF TRANSITION L L 200 300 ns max V = 3 V S EN On Time, tON (EN) 120 ns typ RL = 300 Ω, CL = 35 pF 190 280 ns max V = 3 V S EN Off Time, tOFF (EN) 35 ns typ RL = 300 Ω, CL = 35 pF 50 70 ns max V = 3 V S Break-Before-Make Time Delay, t 100 ns typ R = 300 Ω, C = 35 pF BBM L L 10 ns min V = V = 3 V S1 S2 Charge Injection 0.5 pC typ V = 2.5 V, R = 0 Ω, C = 1 nF S S L 1 pC max Off Isolation −90 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz L L −3 dB Bandwidth 180 MHz typ R = 50 Ω, C = 5 pF L L Source Capacitance, C (OFF) 5 pF typ f = 1 MHz S Drain Capacitance, C (OFF) 29 pF typ f = 1 MHz D C , C (ON) 30 pF typ f = 1 MHz D S POWER REQUIREMENTS V = 5.5 V DD Positive Power Supply Current, I 0.01 µA typ Digital inputs = 0 V or 5.5 V DD 1 µA max 1 Guaranteed by design; not subject to production test. Rev. 0 | Page 4 of 10

Enhanced Product ADG658-EP 2.7 V TO 3.6 V SINGLE SUPPLY V = 2.7 to 3.6 V, V = 0 V, GND = 0 V, unless otherwise noted. DD SS Table 3. Parameter +25°C −55°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 to V V V = 2.7 V, V = 0 V DD DD SS On Resistance, R 185 Ω typ V = 0 V to 2.7 V, I = 0.1 mA ON S S 300 400 Ω max On Resistance Match Between 2 Ω typ V = 1.5 V, I = 0.1 mA S S Channels, ∆R 4.5 7 Ω max ON LEAKAGE CURRENTS V = 3.3 V DD Source Off Leakage, I (OFF) ±0.005 nA typ V = 1 V/3 V, V = 3 V/1 V S S D ±0.2 ±5 nA max Drain Off Leakage, I (OFF) ±0.005 nA typ V = 1 V/3 V, V = 3 V/1 V D S D ±0.2 ±5 nA max Channel On Leakage I , I (ON) ±0.005 nA typ V = V = 1 V or 3 V D S S D ±0.2 ±5 nA max DIGITAL INPUTS Input High Voltage, V 2.0 V min INH Input Low Voltage, V 0.5 V max INL Input Current I or I 0.005 µA typ V = V or V INL INH IN INL INH ±1 µA max Digital Input Capacitance, C 2 pF typ IN DYNAMIC CHARACTERISTICS1 Transition Time, t 200 ns typ R = 300 Ω, C = 35 pF TRANSITION L L 370 490 ns max V = 1.5 V S EN On Time, tON (EN) 230 ns typ RL = 300 Ω, CL = 35 pF 370 490 ns max V = 1.5 V S EN Off Time, tOFF (EN) 50 ns typ RL = 300 Ω, CL = 35 pF 80 110 ns max V = 1.5 V S Break-Before-Make Time Delay, t 200 ns typ R = 300 Ω, C = 35 pF BBM L L 10 ns min V = V = 1.5 V S1 S2 Charge Injection 1 pC typ V = 1.5 V, R = 0 Ω, C = 1 nF S S L 2 pC max Off Isolation −90 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz L L −3 dB Bandwidth 160 MHz typ R = 50 Ω, C = 5 pF L L Source Capacitance, C (OFF) 5 pF typ f = 1 MHz S Drain Capacitance, C (OFF) 29 pF typ f = 1 MHz D C , C (ON) 30 pF typ f = 1 MHz D S POWER REQUIREMENTS V = 3.6 V DD Positive Power Supply Current, I 0.01 µA typ Digital inputs = 0 V or 3.6 V DD 1 µA max 1 Guaranteed by design; not subject to production test. Rev. 0 | Page 5 of 10

ADG658-EP Enhanced Product ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted. Stresses at or above those listed under Absolute Maximum A Ratings may cause permanent damage to the product. This is a Table 4. stress rating only; functional operation of the product at these Parameter Rating or any other conditions above those indicated in the operational V to V 13 V DD SS section of this specification is not implied. Operation beyond V to GND −0.3 V to +13 V DD the maximum operating conditions for extended periods may V to GND +0.3 V to −6.5 V SS affect product reliability. Analog Inputs1 V − 0.3 V to V + 0.3 V SS DD Digital Inputs1 GND − 0.3 V to V + 0.3 V DD or 10 mA, whichever ESD CAUTION occurs first Peak Current, Sx or D 40 mA (Pulsed at 1 ms, 10% duty cycle max) Continuous Current, Sx or D 20 mA Operating Temperature Range −55°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C θ Thermal Impedance JA 16-Lead TSSOP 150.4°C/W Lead Temperature, Soldering Vapor Phase (60 sec) 215°C Infrared (15 sec) 220°C ESD (Human Body Model) 4.0 kV 1 Overvoltages at AX, EN, Sx, or D are clamped by internal diodes. Current must be limited to the maximum ratings. Table 5. Truth Table A2 A1 A0 EN Switch Condition X1 X1 X1 1 None 0 0 0 0 1 0 0 1 0 2 0 1 0 0 3 0 1 1 0 4 1 0 0 0 5 1 0 1 0 6 1 1 0 0 7 1 1 1 0 8 1 X means don’t care Rev. 0 | Page 6 of 10

Enhanced Product ADG658-EP PIN CONFIGURATION AND FUNCTION DESCRIPTIONS S5 1 16 VDD S7 2 15 S3 D 3 14 S2 S8 4 ADG658-EP 13 S1 TOP VIEW S6 5 (Not to Scale) 12 S4 EN 6 11 A0 VSS 7 10 A1 GND 8 9 A2 15981-002 Figure 2. 16-Lead TSSOP Pin Configuration Table 6. 16-Lead TSSOP Pin Function Descriptions Pin No. Mnemonic Description 1, 2, 4, 5, 12, 13, S1 to S8 Source Terminals. Can be an input or output. 14, 15 3 D Drain Terminal. Can be an input or output. 6 EN Active Low Digital Input. When high, device is disabled and all switches are off. When low, Ax logic inputs determine on switch. 7 V Most Negative Power Supply Potential. SS 8 GND Ground (0 V) Reference. 9, 10, 11 A0 to A2 Logic Control Inputs. 16 V Most Positive Power Supply Potential. DD Rev. 0 | Page 7 of 10

ADG658-EP Enhanced Product TYPICAL PERFORMANCE CHARACTERISTICS 100 1.5 90 1.0 80 IS (OFF) A) 0.5 E (Ω) 70 NT (n 0 C 60 E N R A +125°C +85°C R ST 50 CU –0.5 ON RESI 4300 +–4205°°CC EAKAGE –1.0 ID (OIND) ,( OISF (FO)N) –55°C L –1.5 20 VDD = +5V –2.0 VSS = –5V 10 VD = ±4V VS = ±4V 0–5 –4 –3 –2 –1VD, V0S (V)1 2 3 4 5 15981-003 –2.50 20 40TEMPER60ATURE (°8C0) 100 120 15981-006 Figure 3. On Resistance vs. VD (VS) for Different Temperatures (Dual Supply) Figure 6. Leakage Current vs. Temperature (Dual Supply) 140 1.5 VDD = +5V 120 1.0 VVVSDSS == = ± ± 014VVV IS (OFF) E (Ω) 100 ++18255°°CC NT (nA) 0.50 C E N 80 +25°C R A R ESIST 60 –40°C GE CU –0.5 ID (OFF) N R –55°C KA –1.0 O 40 EA ID (ON), IS (ON) L –1.5 20 –2.0 00 0.5 1.0 1.5 2.0VD, 2V.5S (V)3.0 3.5 4.0 4.5 5.0 15981-004 –2.50 20 40TEMPER60ATURE (°8C0) 100 120 15981-007 Figure 4. On Resistance vs. VD (VS) for Different Temperatures (Single Supply) Figure 7. Leakage Current vs. Temperature (Single Supply) 300 250 +125°C +85°C E (Ω) 200 +25°C C N A ST 150 –40°C SI E –55°C R N 100 O 50 0 0 0.5 1.0 VD, 1V.5S (V) 2.0 2.5 3.0 15981-005 Figure 5. On Resistance vs. VD (VS) for Different Temperatures (Single Supply) Rev. 0 | Page 8 of 10

Enhanced Product ADG658-EP 140 350 VDD = +5V VSS = 0V VSS = –5V 120 300 VDD = 3V 100 250 tON s) 80 s) 200 n n ME ( ME ( VDD = 5V TI 60 TI 150 tON 40 100 VDD = 3V tOFF 20 50 tOFF VDD = 5V 0–55 –35 –15 5TEMP2E5RATU4R5E (°C6)5 85 105 125 15981-008 0–55 –35 –15 5TEMP2E5RATU4R5E (°C6)5 85 105 125 15981-009 Figure 8. tON/tOFF Time vs. Temperature (Dual Supply) Figure 9. tON/tOFF Time vs. Temperature (Single Supply) Rev. 0 | Page 9 of 10

ADG658-EP Enhanced Product OUTLINE DIMENSIONS 5.10 5.00 4.90 16 9 4.50 6.40 4.40 BSC 4.30 1 8 PIN 1 1.20 MAX 0.15 0.20 0.05 0.09 0.75 0.30 8° 0.60 0.65 0.19 SEATING 0° 0.45 BSC PLANE COPLANARITY 0.10 COMPLIANT TO JEDEC STANDARDS MO-153-AB Figure 10. 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters ORDERING GUIDE Model1 Temperature Range Package Description Package Option ADG658TRUZ-EP −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG658TRUZ-EP-RL7 −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 1 Z = RoHS Compliant Part. ©2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D15981-0-8/17(0) Rev. 0 | Page 10 of 10

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: ADG659YRQZ ADG658YCPZ ADG659YCPZ ADW54003-0RL7 ADG659WYRUZ-REEL7 ADG659YRU ADG658YRUZ-REEL7 ADG658YCPZ-REEL7 ADG658YRU-REEL7 ADG659YRUZ-REEL7 ADG658YRQZ-REEL7 ADG659YRUZ ADG659YCPZ-REEL7 ADG658YRU ADW54003-0 ADG658YRUZ ADG658YRQZ ADG658YRQ ADG658TRUZ-EP ADG658TRUZ-EP-RL7